Conferences related to MISFETs

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.


2019 IEEE 17th International Symposium On Electrets (ISE)

Electrets and related phenomena are at the frontier of both fundamental scientific and technological interest. The advent of additive manufacturing also opens up new challenges in this field, which can aid solving many process-related challenges and bring about new ways of manufacturing. The huge success of device applications of electrets in the past can expand on novel applications in energy harvesting, bioelectrical stimulation, new sensors and actuators, device and components and characterisation techniques. The ISE conference series is a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, manufacturing and process engineering, materials science and engineering, condensed matter physics and chemistry. It provides a platform for interdisciplinary discussions, debate and dialogues on recent advances in research, development and applications.


2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

EDSSC provides as a multidisciplinary forum for the exchange of ideas, research results, and industry experience in the broad areas of electron devices and solid state circuits and systems. The technical program includes invited talks by famous scientists and contributed papers.


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Periodicals related to MISFETs

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Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.


Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.


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Most published Xplore authors for MISFETs

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Xplore Articles related to MISFETs

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<italic>V</italic><sub>2</sub>O<sub>5</sub>MISFETs on H-Terminated Diamond

IEEE Transactions on Electron Devices, 2016

We report for the first time on the dc and RF performance of novel MISFETs fabricated on hydrogen-terminated (H-terminated) single crystal diamond film using vanadium pentoxide (V2O5) as insulating material. The active devices were characterized in terms of static I-V characteristics and static transconductance as well as of S-parameters for the calculation of the maximum cutoff frequency and the maximum ...


Conjugated Polymers for Electronic, Opto-Electronic and All Optical Device Applications:

[1991] 49th Annual Device Research Conference Digest, 1991

None


Erratum

IEEE Electron Device Letters, 1987

In the letter "High-Efficiency GaInAs Microwave MISFET's," by P.D. Gardner et al., in IEEE Electron Device Letters,vol. EDL-8, pp. 443-446, September 1987, please note the following correction in the Acknowledgment section: "The authors are gratefill to Dr. F. Sterzer for his support of this project and to F. Duigon for his contributions to the development of the SAG MISFET structure."


Impact of electrode-side chemical structures on electron mobility in metal/HfO/sub 2/ MISFETs with sub-1nm EOT

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 2005

Extremely high (247cm/sup 2//Vs at peak) electron mobility has been obtained by sub-1 nm EOT of n-metal/HfO/sub 2/ MISFET with well-controlled metal/HfO/sub 2/ interface. It was found that Coulomb scattering due to nitrogen induced fixed charge degrades the mobility by analyzing the chemical structures of the metal electrode/HfO/sub 2/ interface using backside XPS. Based on a consideration of this result, ...


Preliminary ionizing radiation tests on n-channel inversion-mode GaInAs MISFET's

IEEE Electron Device Letters, 1986

Preliminary results of low-dose rate ionizing radiation (cobalt-60) tests on n-channel inversion-mode GaInAs MISFET's up to a total dose of 5 × 107rad(Si) are presented. The data show that the GaInAs MISFET threshold voltage shifts negatively up to a total dose of 5 × 105rad(Si), with a maximum shift of -0.9 V. The threshold voltage then shifts in a positive ...


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Educational Resources on MISFETs

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IEEE.tv Videos

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IEEE-USA E-Books

  • <italic>V</italic><sub>2</sub>O<sub>5</sub>MISFETs on H-Terminated Diamond

    We report for the first time on the dc and RF performance of novel MISFETs fabricated on hydrogen-terminated (H-terminated) single crystal diamond film using vanadium pentoxide (V2O5) as insulating material. The active devices were characterized in terms of static I-V characteristics and static transconductance as well as of S-parameters for the calculation of the maximum cutoff frequency and the maximum oscillation frequency. Time stability of the drain current was evaluated overnight observing a maximum fluctuation of 7%. Investigations on temperature dependence of diamond-based MISFET were also performed up to 130°C. The experimental results were compared with the better established diamond MESFET technology. Finally, the surface transfer doping of H-terminated diamond by very thin V2O5insulator was also investigated in terms of conductivity, stability in air, and resistance to high temperatures.

  • Conjugated Polymers for Electronic, Opto-Electronic and All Optical Device Applications:

    None

  • Erratum

    In the letter "High-Efficiency GaInAs Microwave MISFET's," by P.D. Gardner et al., in IEEE Electron Device Letters,vol. EDL-8, pp. 443-446, September 1987, please note the following correction in the Acknowledgment section: "The authors are gratefill to Dr. F. Sterzer for his support of this project and to F. Duigon for his contributions to the development of the SAG MISFET structure."

  • Impact of electrode-side chemical structures on electron mobility in metal/HfO/sub 2/ MISFETs with sub-1nm EOT

    Extremely high (247cm/sup 2//Vs at peak) electron mobility has been obtained by sub-1 nm EOT of n-metal/HfO/sub 2/ MISFET with well-controlled metal/HfO/sub 2/ interface. It was found that Coulomb scattering due to nitrogen induced fixed charge degrades the mobility by analyzing the chemical structures of the metal electrode/HfO/sub 2/ interface using backside XPS. Based on a consideration of this result, high-performance nMISFET has been fabricated by using nitrogen-free TaSix (/spl Pi//sub m/spl I.bar/eff/=4.36eV on HfO/sub 2/) as the gate electrode.

  • Preliminary ionizing radiation tests on n-channel inversion-mode GaInAs MISFET's

    Preliminary results of low-dose rate ionizing radiation (cobalt-60) tests on n-channel inversion-mode GaInAs MISFET's up to a total dose of 5 × 107rad(Si) are presented. The data show that the GaInAs MISFET threshold voltage shifts negatively up to a total dose of 5 × 105rad(Si), with a maximum shift of -0.9 V. The threshold voltage then shifts in a positive direction at higher doses. The mobility factor decreases very slightly and then increases with increasing dose.

  • Inversion-mode GaInAs MISFET ring oscillators

    Inversion mode, self-aligned-gate, metal-insulator-semiconductor field-effect transistors (MISFET's) have been fabricated on p-type Ga0.47In0.53As epitaxially grown on semi-insulating InP substrates. Ring-oscillator (RO) circuits were designed using enhancement-driver/ enhancement-load-type logic gates. Propagation delay as low as 50 ps was measured in a nine-stage ring oscillator (driver MISFET about 1.2-µm gate length) with a fan-in and fan-out of one. These are believed to be the first results on GaInAs inversion-mode MISFET-based digital integrated circuits.

  • Frequency, energy and spatially resolved characterization of interface traps in metal-insulator-InP transistors based on noise and current drift measurements

    The authors present a novel characterization technique for interface traps in metal-insulator-InP field effect transistors (MISFETs) based on a combination of low-frequency noise and long-term drift measurements of the drain current. It is shown that fundamental interface parameters (kinetics, and spatial and energy distributions of interface traps) can be directly extracted from rough data without any fitting parameters. This method has been used for the characterization of InP MISFETs where the insulator (SiO/sub 2/) was deposited by the distributed electron cyclotron resonance plasma-assisted chemical vapor deposition technique.<<ETX>>

  • Physical modeling and experimental study of the InP MISFET for power applications

    A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwave characterization has been done to validate the theoretical results and show the technological difficulties for making such devices. Power measurements are also presented using an active load pull power bench.<<ETX>>

  • In<inf>0.53</inf>Ga<inf>0.47</inf>As/Si<inf>3</inf>N<inf>4</inf>n-channel and p-channel inversion mode MISFET's

    We describe the operation of both n-channel and p-channel Si3N4insulated gate In0.53Ga0.47As inversion mode MISFET's. These devices exhibit a maximum transconductance of 4mS/mm which represents a significant improvement over previously reported In0.53Ga0.47As MISFET results.

  • Recent advances in III-V nitride electronic devices

    The latest developments made using III-V nitride technology for microwave and mm-wave applications are reviewed. Design, processing issues are addressed and device, circuit performance is reported. The devices discussed are AlGaN/GaN- based HEMTs, MISFETs and HBTs. Circuit types reviewed include power and low- noise amplifiers. Nitride technology is also investigated for mixer and switch applications.



Standards related to MISFETs

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Jobs related to MISFETs

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