Conferences related to MIS devices

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE/ASME International Conference on Advanced Intelligent Mechatronics (AIM)

The scope of the 2020 IEEE/ASME AIM includes the following topics: Actuators, Automotive Systems, Bioengineering, Data Storage Systems, Electronic Packaging, Fault Diagnosis, Human-Machine Interfaces, Industry Applications, Information Technology, Intelligent Systems, Machine Vision, Manufacturing, Micro-Electro-Mechanical Systems, Micro/Nano Technology, Modeling and Design, System Identification and Adaptive Control, Motion Control, Vibration and Noise Control, Neural and Fuzzy Control, Opto-Electronic Systems, Optomechatronics, Prototyping, Real-Time and Hardware-in-the-Loop Simulation, Robotics, Sensors, System Integration, Transportation Systems, Smart Materials and Structures, Energy Harvesting and other frontier fields.


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Periodicals related to MIS devices

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Reviews in

The IEEE Reviews in Biomedical Engineering will review the state-of-the-art and trends in the emerging field of biomedical engineering. This includes scholarly works, ranging from historic and modern development in biomedical engineering to the life sciences and medicine enabled by technologies covered by the various IEEE societies.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for MIS devices

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Xplore Articles related to MIS devices

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Interpretation of quasi-static C-V characteristics of MOSOS capacitors on SOI substrates

Electronics Letters, 1991

The fabrication of two-terminal MOSOS capacitors incorporating SOI substrates is described. Results of quasi-static C-V measurements are presented for the first time and compared to existing theoretical models. The suitability of the technique to assess rapidly the quality of an SOI MOS fabrication process is finally discussed.<<ETX>>


Achieving uniform nMOS device power distribution for sub-micron ESD reliability

1992 International Technical Digest on Electron Devices Meeting, 1992

The ESD reliability of the advanced sub-micron technologies is a major concern because of the shallow LDD junctions. This paper will show that by achieving uniform power distribution during the entire ESD event in a large multi-finger nMOS device of 0.6 mu m technology, protection levels in excess of 10 kV can be realized. The evidence of this uniform power ...


Nearly bird's beak-free local oxidation technology for controlled dielectric formation in deep silicon trenches

Electronics Letters, 1991

Silicon deep trench isolation technology using local oxidation is reported. Scaled, high-density trench capacitors were fabricated with varying trench aspect ratios. Nearly bird's beak-free local oxidation resulted in a controlled growth of silicon dioxide on the trench bottom surfaces and significantly improved the trench gate MOS isolation characteristics. Detailed MOS capacitance measurements were performed and wafer yield in excess of ...


Frequency dependence of admittance of distributed surface states in MOS structures

Electronics Letters, 1990

A new interpretation for frequency response of capacitance and conductance due to the surface states of an MOS structure has been obtained. Contrary to the usual assumption that such measurements reveal surface states around the Fermi energy E/sub fn/ it has been shown that frequency response of capacitive reactance peaks around an energy E/sub m/=E/sub fn/+(kT/2) ln (1+ omega /sup ...


Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO/sub 2/ gate dielectrics

Electronics Letters, 1989

The radiation-induced interface state generation Delta D/sub it/ in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO/sub 2/. The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the ...


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Educational Resources on MIS devices

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IEEE-USA E-Books

  • Interpretation of quasi-static C-V characteristics of MOSOS capacitors on SOI substrates

    The fabrication of two-terminal MOSOS capacitors incorporating SOI substrates is described. Results of quasi-static C-V measurements are presented for the first time and compared to existing theoretical models. The suitability of the technique to assess rapidly the quality of an SOI MOS fabrication process is finally discussed.<<ETX>>

  • Achieving uniform nMOS device power distribution for sub-micron ESD reliability

    The ESD reliability of the advanced sub-micron technologies is a major concern because of the shallow LDD junctions. This paper will show that by achieving uniform power distribution during the entire ESD event in a large multi-finger nMOS device of 0.6 mu m technology, protection levels in excess of 10 kV can be realized. The evidence of this uniform power distribution resulting from the multi-finger parasitic npn turn-on is shown through an emission microscopy analysis.<<ETX>>

  • Nearly bird's beak-free local oxidation technology for controlled dielectric formation in deep silicon trenches

    Silicon deep trench isolation technology using local oxidation is reported. Scaled, high-density trench capacitors were fabricated with varying trench aspect ratios. Nearly bird's beak-free local oxidation resulted in a controlled growth of silicon dioxide on the trench bottom surfaces and significantly improved the trench gate MOS isolation characteristics. Detailed MOS capacitance measurements were performed and wafer yield in excess of 90% was demonstrated across 4 inch diameter silicon wafers.<<ETX>>

  • Frequency dependence of admittance of distributed surface states in MOS structures

    A new interpretation for frequency response of capacitance and conductance due to the surface states of an MOS structure has been obtained. Contrary to the usual assumption that such measurements reveal surface states around the Fermi energy E/sub fn/ it has been shown that frequency response of capacitive reactance peaks around an energy E/sub m/=E/sub fn/+(kT/2) ln (1+ omega /sup 2/ tau /sub m//sup 2/) whereas the response function for conductance is constant between energies E/sub fn/ and E/sub m/.<<ETX>>

  • Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO/sub 2/ gate dielectrics

    The radiation-induced interface state generation Delta D/sub it/ in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO/sub 2/. The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface 'hardness' of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides.<<ETX>>

  • Nanoscale post-breakdown conduction of HfO/sub 2//SiO/sub 2/ MOS gate stacks studied by enhanced-CAFM

    An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO/sub 2//SiO/sub 2/ gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon.

  • Ultra low-power design techniques using special SOI MOS diodes

    In this paper, we propose new design techniques to reduce static dissipation by using transistors in very weak inversion regimes. Two practical applications are considered: level keepers for Multi-threshold CMOS circuits (MTCMOS) and charge pump circuits.

  • Dependence of radiation induced damage on gate oxide thickness in MOS capacitors with ultrathin gate oxides

    The effect of scaling down gate oxide thickness on radiation induced damage in MOS capacitors with sub-10 nm gate oxides is reported. The trend of reduction in radiation induced positive charge and interface state generation is observed to continue for these ultrathin gate oxides. Results show that neutral trap generation due to radiation exposure is negligible in sub-10 nm gate oxides.<<ETX>>

  • Anomalous behaviour of surface leakage currents in heavily-doped MOS structures

    The anomalous gate voltage- and dopant dependence of surface leakage currents in heavily-doped MOS gated-diode structures is described. It is shown that, by using a recombination model which includes tunnelling effects, a good quantitative description of surface leakage currents can be obtained. This resulted in a revision of the classical description of these currents. Simple design criteria to avoid excessive surface leakage currents are presented.<<ETX>>

  • Dark current limitations in p-type Hg&lt;inf&gt;1-x&lt;/inf&gt;Cd&lt;inf&gt;x&lt;/inf&gt;Te MIS devices

    The potential of HgCdTe MIS devices for use in future generation infrared systems is determined by the magnitude of the respective dark current contributions associated with minority carrier diffusion, generation- recombination in the depletion region, and tunneling by direct band-to-band or via bandgap state transitions. Data on p-type Hg<inf>1-x</inf>Cd<inf>x</inf>Te MIS devices with 0.2 &lt; &#215; &lt; 0.3 indicate that any or all three of these dark current components can dominate diode performance, depending on conditions of operation. Tunneling via bandgap states has been unambiguously identified by the observation for the first time of quantum oscillations in HgCdTe MIS admittance data at 77K associated with tunneling of electrons into quantized electric sub-bands in the inversion layer from the valence band via Shockley-Read centers located in the depletion region.



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