Conferences related to MIM devices

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2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS)

LASCAS aims at presenting a high-quality forum for researchers, designers, developers and graduate students to present the advances of their work on circuits and systems, amidst an international audience with experts from academia and industry all over the world. The LASCAS 2020 symposium will cover novel technical developments in all the areas of the Circuits and Systems Society, but focusing in the areas of biomedical and implantable devices and applications, low power integrated circuits, high speed communication interfaces and circuits and systems design for renewable energy applications.

  • 2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)

    LASCAS is the Flagship Conference of IEEE's Circuits and Systems Society in Latin America. Since its inception and first edition in 2010, LASCAS aims at presenting a high-quality forum for researchers and graduate students to present the advances of their work, admits an international audience with experts from all over the world. This 10th edition will take place in Armenia, Quindío, Colombia

  • 2018 IEEE 9th Latin American Symposium on Circuits & Systems (LASCAS)

    To present the most recent developments in the fields of electronic circuits and systems, including the whole range of applications.

  • 2017 IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS)

    Circuits and Systems

  • 2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)

    The IEEE Latin American Symposium on Circuits and Systems (LASCAS) is the Latin American flagship conference and networking forum for worldwide engineers and researchers in the field of circuits and systems. While LASCAS is being organized by Latin American circuits & Systems community , it brings together worldwide researchers and engineers interested in theoretical, experimental, applications, or technology aspects of circuits & systems across a wide spectrum of scientific and technical fields:semiconductors, optoelectronics, sensors, VLSI, analog and digital circuits, RF circuits, biomedical circuits & systems, testing & reliability, multimedia and communications circuits & systems, among other topics.LASCAS will have a special emphasis on student activities, with grants for Latin American undergraduate students, and specific undergraduate student activities.

  • 2015 IEEE 6th Latin American Symposium on Circuits & Systems (LASCAS 2015)

    The IEEE Latin American Symposium on Circuits and Systems (ISCAS) is Latin American flagship conference and networking forum for worldwide engineers and researchers in the field of circuits and systems. While LASCAS is being organized by Latin American circuits & Systems community , brings together worldwide researchers and engineers interested in theoretical, experimental, applications, or technology aspects of circuits & systems across a wide spectrum of scientific and technical fields:semiconductors, optoelectronics, sensors, VLSI, analog and digital circuits, neural network, biomedical circuits & systems, testing & reliability, multimedia and communications circuits & systems, among other topics.LASCAS will have a special emphasis on student activities, with grants for Latin American undergraduate students, and specific undergraduate student activities.

  • 2014 IEEE 5th Latin American Symposium on Circuits and Systems (LASCAS)

    The goal is to be the International Symposiumof IEEE Circuits and Systems in Latin America. The symposium will cover technical novelties andtutorial overviews on circuits and systems topics. It is the most important symposium on circuits and systems in Latin America having participants for all over the world.

  • 2013 IEEE 4th Latin American Symposium on Circuits and Systems (LASCAS)

    LASCAS 2013 is the International Symposium of IEEE Circuits and Systems in Latin America. LASCAS 2013 will include oral and poster, tutorials given by experts in state-of-the-art topics, and special sessions with the aim of complementing the regular program with topics of of relevant interest to the circuits and systems community.

  • 2012 IEEE 3rd Latin American Symposium on Circuits and Systems (LASCAS)

    LASCAS's goal is to be the International Symposium of IEEE Circuits and Systems in Latin America. LASCAS 2012, sponsored by the IEEE Circuits and Systems Society and supported by INAOE, will be held in Playa del Carmen, Mexico. The scope of the conference is on topics related to circuits and systems such as: Analog and Digital Signal Processing, Biomedical Circuits and Systems, Multimedia Systems and Applications, Nanoelectronics, Cellular Neural Networks and Array Computing, Neural Systems and Applications, Circuits and Systems for Communications, Nonlinear Circuits and Systems, Computer-Aided Design, Power Systems and Power Electronic Circuits, Sensory Systems, Graph Theory and Computing, Visual Signal Processing and Communications, Life Science Systems and Applications, VLSI Systems and Applications, Electronic Testing, & Fault Tolerant Circuits.

  • 2011 IEEE Second Latin American Symposium on Circuits and Systems (LASCAS)

    LASCAS 2011 will be the second version of the International Symposium of IEEE Circuits and Systems in Latin America. The program will include oral and poster presentations, complemented with special sessions to cover technical novelties and tutorial overviews on circuits and systems topics.

  • 2010 First IEEE Latin American Symposium on Circuits and Systems (LASCAS)

    LASCAS2010 goal is to be the International Symposium of IEEE Circuits and Systems in Latin America. The LASCAS 2010 will include oral and poster; embedded tutorials given by experts in state-of-the-art topics; and special sessions, with the aim of complementing the regular program with topics of particular interest to the circuits and systems community.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


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Periodicals related to MIM devices

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Letters, IEEE

Covers topics in the scope of IEEE Transactions on Communications but in the form of very brief publication (maximum of 6column lengths, including all diagrams and tables.)


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes


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Most published Xplore authors for MIM devices

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Xplore Articles related to MIM devices

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Dielectric reliability and material properties of Al/sub 2/O/sub 3/ in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO/sub 2/, SiN and Ta/sub 2/O/sub 5/

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440), 2003

The intrinsic dielectric properties of Al/sub 2/O/sub 3/ have been investigated with respect to MIMCAP applications and compared to SiO/sub 2/, SiN and Ta/sub 2/O/sub 5/. Al/sub 2/O/sub 3/ may be scaled down to 20nm (3.5fF//spl mu/m/sup 2/) while still meeting the reliability requirements and thus surpassing SiN and SiO/sub 2/ considerably. C(V) dependence (about 100ppm/V/sup 2/ @ 50nm for ...


Toothed mid-infrared metal-insulator-metal waveguides

CLEO: 2011 - Laser Science to Photonic Applications, 2011

We fabricate subwavelength varying periodicity toothed metal-insulator-metal waveguides for mid-infrared frequencies. The transmission spectra of these structures for TM and TE polarized light is investigated, and our results compared to numerical simulations.


One-Time Programmable Memory Based on <formula formulatype="inline"><tex Notation="TeX">${\rm ZrTiO}_{x}$</tex></formula> Antifuse for Crossbar Memory Application Featuring High Speed Operation and Low Power Consumption

IEEE Electron Device Letters, 2013

TaN/ZrTiOx/Pt metal-insulator-metal structure was employed as the platform to evaluate the eligibility for antifuse one-time programmable (OTP) memory applications, and the impact of O2 plasma on device performance was also discussed. Owing to the oxygen radicals that enhance the dielectric integrity, the voltage for state switching increases with O2 plasma treatment. Memory cells without plasma treatment demonstrate promising characteristics for ...


Ink-Jet Printed Passive Electronic Components: Metal-Insulator-Metal Device

2005 Pacific Rim Conference on Lasers &amp; Electro-Optics, 2005

We ink-jet printed PMMA solution with organic solvent to form insulator. Experimental results indicated that the leakage current for ink-jet fabricated insulator was about 10nA/cm<sup>2</sup>at 3V, and the dielectric constant for the printed insulator was about 3.0.


Electrical characteristics and reliability of UV transparent Si/sub 3/N/sub 4/ metal-insulator-metal (MIM) capacitors

IEEE Transactions on Electron Devices, 2003

In this paper, we discuss the electrical characteristics and reliability of UV transparent Si/sub 3/N/sub 4/ metal-insulator-metal (MIM) capacitors. We examine film thicknesses in the range of 55 to 25 nm with capacitance densities from 1.2 ff//spl mu/m/sup 2/ to 2.8 ff//spl mu/m/sup 2/, respectively, for single MIM capacitors. A new approach for projecting the dielectric reliability of these films ...


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Educational Resources on MIM devices

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IEEE.tv Videos

Millimeter-Wave Bandpass Filter Using High-Q Conical Inductors and MOM Capacitors: RFIC Interactive Forum
IMS 2011 Microapps - Volume Manufacturing Trends for Automotive Radar Devices
IEEE Life Sciences: Wearable Medical Devices Advancing bioengineering
Analog Devices SP4T RF MEMS Switch with Integrated Driver Circuitry for RF Instrumentation: MicroApps 2015 - Analog Devices
Prototyping MIMO Systems with the AD9361: MicroApps 2015 - Analog Devices
802.19: Wireless Coexistence
Radiated Performance Assessment of Wireless Communications Devices - An Operator's Perspective
A Unified Hardware/Software Co-Design Framework for Neuromorphic Computing Devices and Applications - IEEE Rebooting Computing 2017
APEC 2015: KeyTalks - How to Optimize Performance and Reliability of GaN Power Devices
802.15: Wireless Personal Area Network
EDA Challenges in Designing Computing Systems with postCMOS Devices - IEEE Rebooting Computing 2017
Electrons May Be the New Pharmaceutical Drug
IMS 2012 Special Sessions: The Evolution of Some Key Active and Passive Microwave Components - E. C. Niehenke
ICRA 2020 Keynote - Haptics for Humans in a Physically Distanced World
IMS 2015: Bridging the gap for wearable electronics
CES 2015 DAY 1: TAN LE AND MIND-CONTROL TECHNOLOGY
IMS 2012 Special Sessions: The Evolution of Some Key Active and Passive Microwave Components - K. R. Varian
Evaluating Over-The-Air Performance of MIMO Wireless Devices
Mobile Internet Devices at Intel
Vint Cerf: A Globecom 2019 Keynote

IEEE-USA E-Books

  • Dielectric reliability and material properties of Al/sub 2/O/sub 3/ in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO/sub 2/, SiN and Ta/sub 2/O/sub 5/

    The intrinsic dielectric properties of Al/sub 2/O/sub 3/ have been investigated with respect to MIMCAP applications and compared to SiO/sub 2/, SiN and Ta/sub 2/O/sub 5/. Al/sub 2/O/sub 3/ may be scaled down to 20nm (3.5fF//spl mu/m/sup 2/) while still meeting the reliability requirements and thus surpassing SiN and SiO/sub 2/ considerably. C(V) dependence (about 100ppm/V/sup 2/ @ 50nm for the quadratic voltage coefficient) and dielectric loss (tan/spl delta/=0.0024) meet the requirements for analog and RF applications. Compared to Ta/sub 2/O/sub 5/, Al/sub 2/O/sub 3/ has much lower leakage, but a slight disadvantage in achievable specific capacitance.

  • Toothed mid-infrared metal-insulator-metal waveguides

    We fabricate subwavelength varying periodicity toothed metal-insulator-metal waveguides for mid-infrared frequencies. The transmission spectra of these structures for TM and TE polarized light is investigated, and our results compared to numerical simulations.

  • One-Time Programmable Memory Based on <formula formulatype="inline"><tex Notation="TeX">${\rm ZrTiO}_{x}$</tex></formula> Antifuse for Crossbar Memory Application Featuring High Speed Operation and Low Power Consumption

    TaN/ZrTiOx/Pt metal-insulator-metal structure was employed as the platform to evaluate the eligibility for antifuse one-time programmable (OTP) memory applications, and the impact of O2 plasma on device performance was also discussed. Owing to the oxygen radicals that enhance the dielectric integrity, the voltage for state switching increases with O2 plasma treatment. Memory cells without plasma treatment demonstrate promising characteristics for OTP memory applications in terms of a low dc switching voltage of 2 V, high programming speed of 60 ns, high read endurance up to 106 reading cycles, and desirable retention time and low switching power density of 6.4 mW/cm2. The memory cell technology not only exhibits the prominent performance which is advantageous over other dielectrics reported in the literature, but it also possesses the capability to from stackable 3-D architecture.

  • Ink-Jet Printed Passive Electronic Components: Metal-Insulator-Metal Device

    We ink-jet printed PMMA solution with organic solvent to form insulator. Experimental results indicated that the leakage current for ink-jet fabricated insulator was about 10nA/cm<sup>2</sup>at 3V, and the dielectric constant for the printed insulator was about 3.0.

  • Electrical characteristics and reliability of UV transparent Si/sub 3/N/sub 4/ metal-insulator-metal (MIM) capacitors

    In this paper, we discuss the electrical characteristics and reliability of UV transparent Si/sub 3/N/sub 4/ metal-insulator-metal (MIM) capacitors. We examine film thicknesses in the range of 55 to 25 nm with capacitance densities from 1.2 ff//spl mu/m/sup 2/ to 2.8 ff//spl mu/m/sup 2/, respectively, for single MIM capacitors. A new approach for projecting the dielectric reliability of these films extends the limits of maximum operating voltage. Accounting for temperature acceleration and area scaling, the projected lifetimes can be met for a wide range of operating conditions.

  • Metal-insulator-metal point-contact diodes as a rectifier for rectenna

    The rectenna (rectifying antenna), if extended to operate at visible light, will revolutionize the way sunlight is harvested for electricity. The focus of this work is to develop a suitable rectifier component of the rectenna for rectifying high-frequency radiation. In this work, a point-contact metal- insulator-metal (MIM) diode based on Nb-Nb<sub>2</sub>O<sub>5</sub> and Nb- TiO<sub>2</sub> was fabricated and successfully tested at low frequency. Fabrication of point-contact MIM diodes was greatly simplified by adopting a facile fabrication approach. The ultra-thin (less than 5 nm) insulator layer was deposited via anodic oxidation (of the metal layer), a non-vacuum technique. The second metal is in the form of a bent wire and hence results in a point-contact diode area. An optimization study was carried out to deposit a smooth insulator film with the desired chemical composition. Although researched for more than six decades, suitable MIM devices for high-frequency rectification (with all the desired rectifier behavior) have not yet been developed, mainly because of the many technical difficulties involved. One such difficulty is the lack of optimization of material properties of MIM structures. A systematic study to fill in this lack of knowledge that relates material properties to MIM device performance is reported here. Based on this systematic study, we find a strong correlation between the work function and electron affinity of the metal and insulator, respectively, on MIM device performance.

  • InGaAs monolithic interconnected modules (MIMs)

    A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. Also, the use of a BSR reduces the requirements imposed on a front surface interference filter and may lead to using only an anti-reflection coating. As a result, MIMs are exposed to the entire radiator output, and with increasing output power density. MIMs were fabricated with an active area of 0.9/spl times/1 cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm/sup 2/, under flashlamp testing. The 0.55 eV modules demonstrated a Voc of 4.85 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm/sup 2/. The near IR reflectance (2-4 /spl mu/m) for both lattice-matched and lattice-mismatched structures was measured to be in the range of 80-85%. Latest electrical and optical performance results for these MIMs is presented.

  • High Work-Function Oxygen-Bearing Electrodes for Improved Performance in MANOS Charge-Trap NVM and MIM-DRAM Type Devices

    We demonstrate for the first time molybdenum based oxygen-bearing electrodes for improved performance in MANOS (Metal-Alumina-Nitride-Oxide) charge-trap NVM, and also MIM-DRAM type devices. The meta-stable high work- function (Wfn) molybdenum-oxynitride (MoON) electrodes result in improved retention and erase saturation for the charge trap NVM devices and improved leakage for the MIM devices. Although some of the observed improvements, compared to conventional TaN or TIN electrodes, can be attributed to the higher effective Wfn of the MoON, the improvements are also attributed to free oxygen available during deposition, and also released from the MoON electrode during thermal processing, repairing defects in the respective dielectrics adjacent to the MoON electrodes.

  • Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode

    We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10-7 A/cm2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work- function Ir electrode, and large conduction band offset.

  • Resistive switching in TiN/HfO<sub>2</sub>/Ti/TiN MIM devices for future nonvolatile memory applications

    Bipolar resistive switching in TiN/HfO2/Ti/TiN devices using a CMOS technology process is demonstrated. The performance metrics include a retention time >105 s and a cycling endurance in dc sweep mode >102. By controlling either the set current Iset or by setting an appropriate stop voltage Vstop, the devices hold the potential for multilevel operation. The results suggest that HfO2-based MIM devices with Si CMOS compatible metal electrodes may be well suited for future embedded nonvolatile memory applications.



Standards related to MIM devices

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IEEE Standard for Media Management System (MMS) Session Security, Authentication, Initialization Protocol (SSAIP)

Specify the protocol used to identify, authenticate and establish an initial connection between the software components of the IEEE Media Management System. Details of components of the Media Management System are specified by companion standards.



Jobs related to MIM devices

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