Conferences related to MESFET integrated circuits

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2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)

The IEEE International Midwest Symposium on Circuits and Systems is the oldest IEEE sponsored or co-sponsored conference in the area of analog and digital circuits and systems. Traditional lecture and interactive lecture/poster sessions cover virtually every area of electronic circuits and systems in all fields of interest to IEEE.


2019 Prognostics and System Health Management Conference (PHM-Paris)

PHM-Paris serves as a premier interdisciplinary forum for researchers, scientists, and scholars in the domains of PHM for aeronautics and astronautics, energy and power systems, process industries, computers and telecommunications, and industrial automation. The most recent innovations, trends, concerns, challenges, and solutions will be presented and discussed.


2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

EDSSC provides as a multidisciplinary forum for the exchange of ideas, research results, and industry experience in the broad areas of electron devices and solid state circuits and systems. The technical program includes invited talks by famous scientists and contributed papers.


2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

The conference is part of the IMS Microwave Week and focus on advanced in state-of-the-art in the field of RF integrated circuits. Topics cover RFIC circuits, systems engineering, design methodology, RF modeling and CAD simulation, RFIC technologies, device technologies, fabrication, testing, reliability, packaging, and modules to support RF applications in areas such as Wireless Cellular and Connectivity, Low Power Transceivers, Receiver Sub-Systems and Circuits, Mixed-Signal RF and Data Converters, Reconfigurable and Tunable Front-Ends, Transmitter Sub-Systems and Power Amplifiers, Oscillators, Frequency Synthesis, Millimeter- and Sub-Millimeter Wave Systems, and High-Speed Data Transceivers.


2018 International Semiconductor Conference (CAS)

The aim of the conference is two-fold. First, it provides a forum of debate on selected topics ofscientific research and technological development. On the other hand, this is an occasion forrefreshing a broad perspective of the participants through invited papers and tutorials. TheConference is underlying the development in micro-and nanotechnologies, still maintaining the"traditional" connection with semiconductor electronics.



Periodicals related to MESFET integrated circuits

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Education, IEEE Transactions on

Educational methods, technology, and programs; history of technology; impact of evolving research on education.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for MESFET integrated circuits

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Xplore Articles related to MESFET integrated circuits

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A 0.2 mu m GaAs MESFET technology for 10 Gb/s digital and analog ICs

1991 IEEE MTT-S International Microwave Symposium Digest, 1991

A 0.2 mu m gate length GaAs IC technology is reported. This technology enables the fabrication of both digital and analog ICs using the same process. A 10 Gb/s decision circuit with a 130 mV sensitivity and 215 degrees phase margin, and an amplifier with a 20 dB gain and 13 GHz bandwidth were successfully fabricated using this unified process ...


Optical response of the GaAs MESFET at microwave frequencies and applications

1991 IEEE MTT-S International Microwave Symposium Digest, 1991

The authors consider the MESFET as an optical port on MMICs (monolithic microwave integrated circuits). It is shown quantitatively how better optical coupling improves the photoresponse of the MESFET. It is pointed out that by modest redesign its frequency response can be significantly extended up to 10 GHz. How these can be converted to better optical control of MMIC circuits ...


A monolithic mixer IC: design and characteristics on n-implant only, buried p- and MBE wafers

IEEE International Digest on Microwave Symposium, 1990

A monolithic high-performance MESFET mixer integrated circuit has been developed for general purpose applications. In order to achieve high dynamic range, low power consumption, and small size, active circuit techniques have been utilized for applications of up to 4 GHz. The balanced mixer, consisting of active phase-splitting networks and a commutator cell, was fabricated on different wafers having n-implant only, ...


Demonstration of photonically controlled GaAs digital/MMIC for RF optical links

IEEE Transactions on Microwave Theory and Techniques, 1997

We report design, fabrication, and test of a monolithic GaAs optoelectronic integrated circuit (OEIC) implementing a broad-band optically driven digital/analog radio frequency (RF) interface. The integrated circuit (IC) was fabricated using a foundry-compatible enhancement/depletion metal- semiconductor field-effect transistor (MESFET) process with no added lithography steps. A single optical fiber carries externally amplitude modulated 0.85-/spl mu/m light to the on-chip GaAs ...


3D Integration of GaAs MESFET and varactor diode for a VCO-MMIC

ESSDERC '90: 20th European Solid State Device Research Conference, 1990

For the optimization of MESFET and varactor diode in a monolithic microwave integrated circuit (MMIC) different epitaxial layer structures are required. We report on the 3-d integration of the different devices by stacking the specific layers upon each other. DC and RF performances of the integrated FET are improved introducing an insulating layer sequence. A voltage controlled oscillator (VCO) has ...



Educational Resources on MESFET integrated circuits

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IEEE.tv Videos

IEEE Custom Integrated Circuits Conference
Multi-Level Optical Weights in Integrated Circuits - IEEE Rebooting Computing 2017
Education for Analog ICs
IEEE Photonics Conference 2017 Recap
ASC-2014 SQUIDs 50th Anniversary: 1 of 6 Arnold Silver
Multi-Level Optimization for Large Fan-In Optical Logic Circuits - Takumi Egawa - ICRC 2018
R. Jacob Baker - SSCS Chip Chat Podcast, Episode 4
IMS 2014:Active 600GHz Frequency Multiplier-by-Six S-MMICs for Submillimeter-Wave Generation
"Towards Monolithic Quantum Computing Processors In Production FDSOI CMOS Technology"
Interview with Takao Nishitani - IEEE Donald O. Pederson Award in Solid-State Circuits Co-Recipient 2017
2011 IEEE Medal of Honor: Morris Chang
Pt. 2: Electronic & Photonic (Co)Packaging Technologies - Bill Bottoms - Industry Panel 2, IEEE Globecom, 2019
BSIM Spice Model Enables FinFET and UTB IC Design
Robust Qubit Manipulation with Integrated Circuits: Optical Computing - Pérola Milman at INC 2019
Towards Logic-in-Memory circuits using 3D-integrated Nanomagnetic Logic - Fabrizio Riente: 2016 International Conference on Rebooting Computing
A Low-Power Fully Integrated 76-81GHz ADPLL for Automotive Applications - Ahmed R. Fridi - RFIC 2019 Showcase
ON-CHIP VOLTAGE AND TIMING DIAGNOSTIC CIRCUITS
Pt. 2: Limits & Prospects of Mixed-Signal Electronics - Tomislav Drenski - Industry Panel 2, IEEE Globecom, 2019
Going Beyond Moore's Law: IEEE at SXSW 2017
26th Annual MTT-AP Symposium and Mini Show - Dr. AnhVu Pham

IEEE-USA E-Books

  • A 0.2 mu m GaAs MESFET technology for 10 Gb/s digital and analog ICs

    A 0.2 mu m gate length GaAs IC technology is reported. This technology enables the fabrication of both digital and analog ICs using the same process. A 10 Gb/s decision circuit with a 130 mV sensitivity and 215 degrees phase margin, and an amplifier with a 20 dB gain and 13 GHz bandwidth were successfully fabricated using this unified process technology.<<ETX>>

  • Optical response of the GaAs MESFET at microwave frequencies and applications

    The authors consider the MESFET as an optical port on MMICs (monolithic microwave integrated circuits). It is shown quantitatively how better optical coupling improves the photoresponse of the MESFET. It is pointed out that by modest redesign its frequency response can be significantly extended up to 10 GHz. How these can be converted to better optical control of MMIC circuits is demonstrated. A direct optical injection locking of a MESFET oscillator was performed. The measured optical injection locking bandwidth was 43.8 MHz.<<ETX>>

  • A monolithic mixer IC: design and characteristics on n-implant only, buried p- and MBE wafers

    A monolithic high-performance MESFET mixer integrated circuit has been developed for general purpose applications. In order to achieve high dynamic range, low power consumption, and small size, active circuit techniques have been utilized for applications of up to 4 GHz. The balanced mixer, consisting of active phase-splitting networks and a commutator cell, was fabricated on different wafers having n-implant only, buried p-layer and molecular beam epitaxy. The monolithic integrated circuit has shown a conversion gain of 1 dB with RF and LO rejections greater than 20 dB, up to 4 GHz. A detailed comparison of the performance of the IC on different wafers is presented.<<ETX>>

  • Demonstration of photonically controlled GaAs digital/MMIC for RF optical links

    We report design, fabrication, and test of a monolithic GaAs optoelectronic integrated circuit (OEIC) implementing a broad-band optically driven digital/analog radio frequency (RF) interface. The integrated circuit (IC) was fabricated using a foundry-compatible enhancement/depletion metal- semiconductor field-effect transistor (MESFET) process with no added lithography steps. A single optical fiber carries externally amplitude modulated 0.85-/spl mu/m light to the on-chip GaAs metal-semiconductor-metal interdigitated photodetector. RF as well as simultaneous digital information encoded at up to 10 Mb/s using a novel waveform set is transmitted over the fiber. The serial digital data is self-clocked into on-chip registers to control the RF signal chain, which includes a three-bit digital attenuator. The circuit operates in an asynchronous mode to detect digital and RF on the single optical-fiber input, control RF level, and transmit the 2-8-GHz RF to the IC's electrical output. Measurements characterizing the RF and digital performance of the IC as well as a demonstration of the full optoelectronic mixed-mode functioning of the IC are presented.

  • 3D Integration of GaAs MESFET and varactor diode for a VCO-MMIC

    For the optimization of MESFET and varactor diode in a monolithic microwave integrated circuit (MMIC) different epitaxial layer structures are required. We report on the 3-d integration of the different devices by stacking the specific layers upon each other. DC and RF performances of the integrated FET are improved introducing an insulating layer sequence. A voltage controlled oscillator (VCO) has been realized with the first design for a frequency of oscillation of 9 GHz.

  • Application of phase-shifting mask technology to 0.17/spl mu/m-gate GaAs MESFET for ultra high speed IC's

    None

  • Quarter, half, and one watt wideband millimeter-wave MMIC amplifiers

    Three wideband MMIC (monolithic microwave integrated circuit) power amplifier configurations have been realized which deliver output power of 0.25, 0.5, and 1.0 W in Ka-band using 0.25- mu m, single-recess, ion-implanted MESFETs. Reactive matching and combining techniques are employed on-chip in the 0.25- and 0.5-W versions. The 1.0-W version utilizes off-chip in-phase combiners. Power-added efficiencies of 8% to 12% have been measured as well as small- signal gains between 6 and 8 dB, depending on the configuration.<<ETX>>

  • X-band low phase distortion MMIC power limiter

    Describes the design and performance of an 8-GHz MMIC (monolithic microwave integrated circuit) MESFET (metal-semiconductor FET) power limiter. This limiter incorporates a special gate biasing scheme and makes use of appropriate load conditions which reduce the unexpected phase variations experienced by the signal through the device. Measured performances (phase variations less than 8 over a 22-dB input power range) are found to be in agreement with the theoretical ones obtained from large signal simulations.<<ETX>>

  • A GaAs SONET framer IC for broadband subscriber loop applications

    An experimental prototype high-speed SONET (Synchronous Optical Network) framer IC designed for possible broadband subscriber loop applications is presented. The experimental prototype IC, implemented in a GaAs enhancement/depletion (E/D) MESFET technology, performs 8:1 multiplexing, 1:8 demultiplexing, byte alignment, and SONET frame detection functions. The chip operates at data rates up to 1.244 Gb/s (SONET STS-24) over a temperature range from -40 degrees to +85 degrees C. The experimental prototype IC contains approximately 4000 transistors, dissipates 2.5 W of power, and has an estimated yield of about 50%. This performance demonstrates the feasibility of using GaAs LSI in broadband subscriber loop applications where high speed, high density, and low temperature sensitivity are required.<<ETX>>

  • High-speed GaAs MESFET digital IC design for optical communication systems

    This paper describes a high-speed GaAs MESFET digital IC design for optical communication systems. We propose novel circuit configurations of a selector and a static delayed flip-flop which are key elements to perform high-speed digital functions. Employing these new design, the selector IC and static decision IC fabricated with 0.12-/spl mu/m GaAs MESFET operated up to 44 Gbit./s and 22 Gbit/s, respectively. These performances are record speed for GaAs MESFETs.



Standards related to MESFET integrated circuits

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No standards are currently tagged "MESFET integrated circuits"