Conferences related to MESFET circuits

Back to Top

2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.


2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

The conference is part of the IMS Microwave Week and focus on advanced in state-of-the-art in the field of RF integrated circuits. Topics cover RFIC circuits, systems engineering, design methodology, RF modeling and CAD simulation, RFIC technologies, device technologies, fabrication, testing, reliability, packaging, and modules to support RF applications in areas such as Wireless Cellular and Connectivity, Low Power Transceivers, Receiver Sub-Systems and Circuits, Mixed-Signal RF and Data Converters, Reconfigurable and Tunable Front-Ends, Transmitter Sub-Systems and Power Amplifiers, Oscillators, Frequency Synthesis, Millimeter- and Sub-Millimeter Wave Systems, and High-Speed Data Transceivers.


2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)

The IEEE International Midwest Symposium on Circuits and Systems is the oldest IEEE sponsored or co-sponsored conference in the area of analog and digital circuits and systems. Traditional lecture and interactive lecture/poster sessions cover virtually every area of electronic circuits and systems in all fields of interest to IEEE.


2019 Prognostics and System Health Management Conference (PHM-Paris)

PHM-Paris serves as a premier interdisciplinary forum for researchers, scientists, and scholars in the domains of PHM for aeronautics and astronautics, energy and power systems, process industries, computers and telecommunications, and industrial automation. The most recent innovations, trends, concerns, challenges, and solutions will be presented and discussed.


2019 IEEE 20th Wireless and Microwave Technology Conference (WAMICON)

The conference will address up-to-date multidisciplinary research needs and interdisciplinary aspects of wireless and RF technology.



Periodicals related to MESFET circuits

Back to Top

Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Industrial Electronics, IEEE Transactions on

Theory and applications of industrial electronics and control instrumentation science and engineering, including microprocessor control systems, high-power controls, process control, programmable controllers, numerical and program control systems, flow meters, and identification systems.



Most published Xplore authors for MESFET circuits

Back to Top

Xplore Articles related to MESFET circuits

Back to Top

Distortion analysis of GaAs MESFETs based on physical model using PISCES-HB

International Electron Devices Meeting. Technical Digest, 1996

Distortion simulations of GaAs MESFETs based on a physical model and applying the harmonic balance method have been demonstrated. Simulation of circuit configurations with components such as blocking capacitors and RF chokes feeding 50 ohm terminations was performed. Good agreement has been obtained between simulation and measurements for harmonic distortion and two-tone intermodulation distortion characteristics.


A new pinched-off cold-FET method to extract parasitic capacitances of MESFETs and HEMTs

RAWCON 2000. 2000 IEEE Radio and Wireless Conference (Cat. No.00EX404), 2000

The extrinsic gate and drain capacitances, C/sub pg/ and C/sub pd/, are extracted based on a physically meaningful depletion-layer model and a linear regression technique. The extraction method can be applied to obtain the small-signal equivalent circuit parameters for the MESFETs and HEMTs. The simulated S parameters based on the new analytical method exhibit great agreement with the measured S ...


Optimization of distributed monolithic GaAs amplifiers using an analytical/graphical technique

1988., IEEE MTT-S International Microwave Symposium Digest, 1988

An analytical/graphical procedure is presented that provides a close approximation to the optimum design of a distributed monolithic GaAs amplifier, given specific gain and 1-dB bandwidth requirements. The technique gives the optimum number of stages, the FET dimensions, and the values of the lumped inductors used to realize the artificial transmission lines.<<ETX>>


Broadband MMIC amplifier with active matching

1993 23rd European Microwave Conference, 1993

This paper presents the simulation and measurement results of a broadband MMIC amplifier. This amplifier differs from usual broadband MMIC amplifiers such as resistive matching and those distributed. Its topology is based on the use of active matching and active biasing.


Microwave Performance of Dual-Gate Cascode MESFET and HEMT Devices with High Gain at Low Noise Levels

1991 21st European Microwave Conference, 1991

Quarter micron dual-gate MESFETs and pseudomorphic HEMTs connected as a cascode circuit have been fabricated and investigated. The devices exhibit a high output impedance and a very low feedback capacitance resulting in high voltage gain factors gm/gd up to 125 and a Cgs/Cgd ratio up to 45. The maximum stable gain obtained with dual-gate HEMTs is 23.5 dB 10 GHz ...



Educational Resources on MESFET circuits

Back to Top

IEEE-USA E-Books

  • Distortion analysis of GaAs MESFETs based on physical model using PISCES-HB

    Distortion simulations of GaAs MESFETs based on a physical model and applying the harmonic balance method have been demonstrated. Simulation of circuit configurations with components such as blocking capacitors and RF chokes feeding 50 ohm terminations was performed. Good agreement has been obtained between simulation and measurements for harmonic distortion and two-tone intermodulation distortion characteristics.

  • A new pinched-off cold-FET method to extract parasitic capacitances of MESFETs and HEMTs

    The extrinsic gate and drain capacitances, C/sub pg/ and C/sub pd/, are extracted based on a physically meaningful depletion-layer model and a linear regression technique. The extraction method can be applied to obtain the small-signal equivalent circuit parameters for the MESFETs and HEMTs. The simulated S parameters based on the new analytical method exhibit great agreement with the measured S parameters from 0.5 to 20 GHz.

  • Optimization of distributed monolithic GaAs amplifiers using an analytical/graphical technique

    An analytical/graphical procedure is presented that provides a close approximation to the optimum design of a distributed monolithic GaAs amplifier, given specific gain and 1-dB bandwidth requirements. The technique gives the optimum number of stages, the FET dimensions, and the values of the lumped inductors used to realize the artificial transmission lines.<<ETX>>

  • Broadband MMIC amplifier with active matching

    This paper presents the simulation and measurement results of a broadband MMIC amplifier. This amplifier differs from usual broadband MMIC amplifiers such as resistive matching and those distributed. Its topology is based on the use of active matching and active biasing.

  • Microwave Performance of Dual-Gate Cascode MESFET and HEMT Devices with High Gain at Low Noise Levels

    Quarter micron dual-gate MESFETs and pseudomorphic HEMTs connected as a cascode circuit have been fabricated and investigated. The devices exhibit a high output impedance and a very low feedback capacitance resulting in high voltage gain factors gm/gd up to 125 and a Cgs/Cgd ratio up to 45. The maximum stable gain obtained with dual-gate HEMTs is 23.5 dB 10 GHz and 19 dB at 20 GHz, the current gain cutoff frequency is 45 GHz. The cascode PHEMTs show a low noise figure of 1.1 dB with an associated gain of 22 dB at 10 GHz. These results represent the highest gain values and the best noise performance yet reported for dual-gate HEMT devices. With dual-gate MESFETs a dynamic range of more than 35 dB can be obtained for the insertion gain/loss up to 40 GHz by applying a DC voltage swing of 4 V at the second gate electrode. Thus these elements are very promising for gain controllable amplifiers for both low noise and high gain as well as for switching applications.

  • GaAs digital VLSI device and circuit technology

    The author presents an overview of ion-implanted GaAs MESFET device fabrication, and the interconnect and process technologies developed for GaAs VLSI circuits. Circuit topologies and circuit results for GaAs VLSI are also presented. It is noted that the development and improvement of self-aligned refractory gate MESFET process technology, which produces high-quality enhancement and depletion transistors, allows the use of simple, high performance DCFL (direct coupled FET logic) circuit topology. This circuit family, coupled with advanced, high density, low capacitance interconnect technology provides the capability for very-high-performance, low-power GaAs VLSI circuits. Silicon MOS processing techniques and equipment have been used for fabrication of the circuits, and silicon-like circuit topologies, design tools, and design techniques have been used to design, verify, and test the circuits. Circuits of 100000 gate complexity are currently available.<<ETX>>

  • On the design of active GaAs multipliers

    This paper is concerned with the design of high performance analogue multipliers using GaAs MESFET technology which use compact entirely active circuits and avoid the need for off-chip transformers or large on-chip baluns using coupled structures. A study by theory and simulation is made of various interface stages which drive the push-pull output FETs and some complete multipliers using various input signal splitters are compared. The need is identified for an improved signal splitter which can be realised in compact MMIC form.

  • Comments on "Instantaneous model of a MESFET for use in linear and nonlinear circuit simulations" by I. Corbella et al. [with reply]

    The commenters address some issues regarding scientific priority, proper references to previously published work, and professional ethics with respect to the above titled paper by I Corbella et al (ibid., vol.40, no.7, p.1410-1421, July 1992). A rebuttal is given by I. Corbella.<<ETX>>

  • Temperature-dependent modeling of high power MESFET using thermal FDTD method

    A temperature-dependent model of high power MESFET based on the small signal extraction methodology is presented. The temperature dependencies of the MESFET equivalent circuit elements derived from experimental results describing long-term thermal effects and short-term thermal effects have been modeled by means of FDTD method using chip dimensions. The verification of the proposed model shows an excellent agreement of the experimental results with the theoretical analysis.

  • Distortion in broad-band gallium arsenide MESFET control and switch circuits

    The author analyzes the nonlinear mechanisms of the MESFET in its passive control mode of operation and equations are developed that allow designers to predict second- and third-order harmonic and intermodulation products in the conducting state MESFET. The analytic expressions are verified by experimental data. The discussion is based on a lumped element equivalent circuit model and is limited to applications where the MESFET is operating in its conducting state. In switch circuits, the analysis indicates that distortion may be reduced by the use of MESFETs with pinchoff voltages in the 2-3-V range and with large open channel current capacities. In attenuators, the analysis shows extreme variations in the level of distortion over a relatively narrow range of attenuation levels. Distortion in the case of the reflective attenuator may be reduced by the use of MESFETs with small open channel current capabilities.<<ETX>>



Standards related to MESFET circuits

Back to Top

No standards are currently tagged "MESFET circuits"