Conferences related to JFETs

Back to Top

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 29th International Symposium on Industrial Electronics (ISIE)

ISIE focuses on advancements in knowledge, new methods, and technologies relevant to industrial electronics, along with their applications and future developments.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE Energy Conversion Congress and Exposition (ECCE)

IEEE-ECCE 2020 brings together practicing engineers, researchers, entrepreneurs and other professionals for interactive and multi-disciplinary discussions on the latest advances in energy conversion technologies. The Conference provides a unique platform for promoting your organization.

  • 2019 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE-ECCE 2019 brings together practicing engineers, researchers, entrepreneurs and other professionals for interactive and multi-disciplinary discussions on the latest advances in energy conversion technologies. The Conference provides a unique platform for promoting your organization.

  • 2018 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of ECCE 2018 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energyconversion, industrial power and power electronics.

  • 2017 IEEE Energy Conversion Congress and Exposition (ECCE)

    ECCE is the premier global conference covering topics in energy conversion from electric machines, power electronics, drives, devices and applications both existing and emergent

  • 2016 IEEE Energy Conversion Congress and Exposition (ECCE)

    The Energy Conversion Congress and Exposition (ECCE) is focused on research and industrial advancements related to our sustainable energy future. ECCE began as a collaborative effort between two societies within the IEEE: The Power Electronics Society (PELS) and the Industrial Power Conversion Systems Department (IPCSD) of the Industry Application Society (IAS) and has grown to the premier conference to discuss next generation technologies.

  • 2015 IEEE Energy Conversion Congress and Exposition

    The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.

  • 2010 IEEE Energy Conversion Congress and Exposition (ECCE)

    This conference covers all areas of electrical and electromechanical energy conversion. This includes power electrics, power semiconductors, electric machines and drives, components, subsystems, and applications of energy conversion systems.

  • 2009 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the conference include all technical aspects of the design, manufacture, application and marketing of devices, circuits, and systems related to electrical energy conversion technology


2020 IEEE Industry Applications Society Annual Meeting

The Annual Meeting is a gathering of experts who work and conduct research in the industrial applications of electrical systems.


More Conferences

Periodicals related to JFETs

Back to Top

Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Industrial Electronics, IEEE Transactions on

Theory and applications of industrial electronics and control instrumentation science and engineering, including microprocessor control systems, high-power controls, process control, programmable controllers, numerical and program control systems, flow meters, and identification systems.


More Periodicals

Most published Xplore authors for JFETs

Back to Top

Xplore Articles related to JFETs

Back to Top

Ion-implanted JFET-bipolar monolithic analog circuits

1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1974

An ion-implant JFET-bipolar process developed for analog circuitry will be covered, citing applications for low-offset, wideband, fast-settling FET-input op-amp and a high-speed quad analog switch.


How deeply will MOS penetrate linear applications

1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1974

Single chip MOS and MOS-bipolar linear circuits have been developed for op- amp, A/D and D/A and signal processing applications. Comparisons will be drawn between the use of MOS and bipolar transistors in monolithic design. Discussions will center on circuits and device performance levels obtainable now and in the future.


The JFET as a photosensitive cell in image sensor arrays

1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1974

JFETs, as photosensitive elements, offer gain and non-destructive readout; additionally switching transients and attenuation by parasitic capacitances can be eliminated. A 5 × 5 array, using a double punch-through a resetting method, will be described.


Analytic Model of Specific On-state Resistance for Superjunction MOSFETs with an Oxide Pillar

IEEE Electron Device Letters, None

An analytical model for superjunction MOSFETs having an oxide pillar between the n-pillar and the p-pillar is developed. Owing to the low permittivity of the oxide, a high electric field is sustained across the oxide. This reduces the parasitic depletion width within the n-pillar thus improving the current conducting path. The advantage of this structure is particularly visible as the ...


Epitaxial n-channel JFETs integrated on high resistivity silicon for X-ray detectors

Proceedings of 1994 IEEE Nuclear Science Symposium - NSS'94, 1994

Junction field-effect transistors (JFETs) were fabricated directly onto a high resistivity silicon wafer and tested as readout devices for radiation detectors. The JFETs were fabricated using an n-channel epitaxial process. We report on the design and electrical characteristics of these devices as well as the noise performance and energy resolution obtained with these devices when operated as X-ray spectrometers.<<ETX>>


More Xplore Articles

Educational Resources on JFETs

Back to Top

IEEE.tv Videos

No IEEE.tv Videos are currently tagged "JFETs"

IEEE-USA E-Books

  • Ion-implanted JFET-bipolar monolithic analog circuits

    An ion-implant JFET-bipolar process developed for analog circuitry will be covered, citing applications for low-offset, wideband, fast-settling FET-input op-amp and a high-speed quad analog switch.

  • How deeply will MOS penetrate linear applications

    Single chip MOS and MOS-bipolar linear circuits have been developed for op- amp, A/D and D/A and signal processing applications. Comparisons will be drawn between the use of MOS and bipolar transistors in monolithic design. Discussions will center on circuits and device performance levels obtainable now and in the future.

  • The JFET as a photosensitive cell in image sensor arrays

    JFETs, as photosensitive elements, offer gain and non-destructive readout; additionally switching transients and attenuation by parasitic capacitances can be eliminated. A 5 &#215; 5 array, using a double punch-through a resetting method, will be described.

  • Analytic Model of Specific On-state Resistance for Superjunction MOSFETs with an Oxide Pillar

    An analytical model for superjunction MOSFETs having an oxide pillar between the n-pillar and the p-pillar is developed. Owing to the low permittivity of the oxide, a high electric field is sustained across the oxide. This reduces the parasitic depletion width within the n-pillar thus improving the current conducting path. The advantage of this structure is particularly visible as the cell pitch is scaled down and the pillows become narrower. The use of an oxide pillar leads to 30 % reduction in the specific on-state resistance when compared to a conventional superjunction for a 2 μm cell pitch. The analytical model shows a good agreement with the simulation results.

  • Epitaxial n-channel JFETs integrated on high resistivity silicon for X-ray detectors

    Junction field-effect transistors (JFETs) were fabricated directly onto a high resistivity silicon wafer and tested as readout devices for radiation detectors. The JFETs were fabricated using an n-channel epitaxial process. We report on the design and electrical characteristics of these devices as well as the noise performance and energy resolution obtained with these devices when operated as X-ray spectrometers.<<ETX>>

  • Continuous switching operation of 15 kV FREEDM super-cascode

    High voltage and wide bandgap (WBG) semiconductor devices like the 15 kV SiC MOSFET have attracted a lot of attention because of their potential applications in high voltage and high power converters. However, they are not commercially available at present and their high cost might be a hindrance to their widespread adoption in future. To address the commercial unavailability and the high cost issues of the 15 kV SiC MOSFET, the 15 kV FREEDM Super- Cascode, which is based on 1.2 kV SiC MOSFET and JFETs series connection, is designed and developed. In this paper, the high switching frequency operation of the newly developed 15 kV, 40 A FREEDM Super-Cascode is tested and reported for the first time. A 7.2 kV ac rms input, 400 V dc output, 40 kW converter is designed using the 15 kV FREEDM Super-Cascode, whose switching frequency varies from 15 to 64 kHz.

  • Stable high dV/dt switching of SiC JFETs using simple drive methods

    Due to low on-resistance and low intrinsic capacitance the SiC JFET is capable of very high dV/dt in principle. However, these advantages often result in the excitation of resonant modes during switching. The low on on-resistance of the device results in less contributes little damping of to the L-C resonance in the circuit. Under conditions which are realizable in applications, the devices will manifest sustained oscillations. Typically these problems are addressed by reducing the switching speeds using various dissipative methods. These methods focus on symptomatic effects rather than causes. Careful consideration to parasitic inductances in circuit layout can yield very high dV/dt switching (e.g. &lt;; 30 V/ns) with only the need for modest series gate resistance to achieve stable operation. This paper demonstrates this effect experimentally, reporting the highest known switching rates of inductive currents for these devices to date.

  • Current enhancement by conductivity modulation in diamond JFETs for next generation low-loss power devices

    Diamond junction field-effect transistors (JFETs) were operated in bipolar- mode to enhance the drain current. In unipolar-mode, the drain current in diamond JFET is limited by low activation of boron acceptors in the p-type channel. To increase the drain current, minority carriers were injected from the n<sup>+</sup>-diamond gates to p-channel, resulting in conductivity modulation. The drain current increased by a factor of up to 8.5 with current gains of 100-2600. We confirmed that the bipolarmode operation can be performed at a high temperature of 200 <sup>o</sup>C. The combination of the bipolar-mode and high temperature operation will lead to the realization of low-loss diamond power devices.

  • DC characteristics of Junction Vertical Slit Field-Effect Transistor (JVeSFET)

    This paper presents a simulation based feasibility study of deep-submicron JFETs obeying an extreme layout regularity, that is a foundation of a new vertical slit geometry ICs (VeSTICs) vision proposed in. DC characteristics obtained for symmetrical dual gate JVeSFETs have been investigated in a wide range of bias voltages. As a conclusion an assessment of applicability of these devices in nano-size era SoCs is proposed.

  • Efficiency and cost comparison of Si IGBT and SiC JFET isolated DC/DC converters

    Silicon carbide (SiC) and other wide band gap devices are in these years undergoing a rapid development. The need for higher efficiency and smaller dimensions are forcing engineers to take these new devices in to considerations when choosing semiconductors for their converters. In this article a Si based converter and a SiC based converter is compared. Both converters are isolated DC/DC converters and were designed for 5 kW nominal outputs. Test setups for both converters were built and tested. The hardware differences between the two converters are described and performance is compared. An efficiency of above 97 % for the SiC JFET and over 90 % for the SI IGBT converter was measured. Cost differences between the two converters have been analyzed, showing that 772 days of operation are needed for the SiC converter costs to break even with the Si IGBT converter costs.



Standards related to JFETs

Back to Top

No standards are currently tagged "JFETs"


Jobs related to JFETs

Back to Top