Ionizing radiation

View this topic in
Ionizing (or ionising) radiation consists of particles or electromagnetic waves that are energetic enough to detach electrons from atoms or molecules, therefore ionizing them. (Wikipedia.org)






Conferences related to Ionizing radiation

Back to Top

2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 41st Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops andinvitedsessions of the latest significant findings and developments in all the major fields ofbiomedical engineering.Submitted papers will be peer reviewed. Accepted high quality paperswill be presented in oral and postersessions, will appear in the Conference Proceedings and willbe indexed in PubMed/MEDLINE & IEEE Xplore


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


More Conferences

Periodicals related to Ionizing radiation

Back to Top

Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


More Periodicals

Most published Xplore authors for Ionizing radiation

Back to Top

No authors for "Ionizing radiation"


Xplore Articles related to Ionizing radiation

Back to Top

Fiber optic ionizing radiation detector

Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference, 1991

The authors describe a novel design for an ionizing radiation sensor using coiled optical fibers, which can be placed within or near a radioactive source. Coiled fiber samples were placed inside metallic and metal-matrix composite cylinders to evaluate the sensitivity of the materials. The system has been shown to have a sensitivity range of 10 to 100 kRad(Si). Further study ...


Design of nonelectrode microwave-biased radiation detectors

2009 19th International Crimean Conference Microwave & Telecommunication Technology, 2009

Actual ways of development of measuring microwave resonant systems with contactless inclusion of a sensor sensitive to ionizing radiation fulfilled from wide-gap compound semiconductor such as CdTe (CdZnTe) are offered. The numerical modeling and optimization of several kinds of such resonant systems has allowed approaching to a constructional design of effective radiating semiconductor microwave-biased sensors. It is expected, that the ...


An Advanced Theory Of Stark Broadening For Diagnostics Of Dense Plasmas

IEEE Conference Record - Abstracts. 1992 IEEE International Conference on Plasma, 1993

None


TID Effects in Deep N-Well CMOS Monolithic Active Pixel Sensors

IEEE Transactions on Nuclear Science, 2009

This paper is devoted to the study of total ionizing dose effects in deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) for particle tracking fabricated in a STMicroelectronics 130 nm process. DNW-MAPS samples were exposed to gamma-rays up to a final dose of 1100 krad(SiO<sub>2</sub>) and then subjected to a 100degC annealing cycle. Ionizing radiation tolerance was tested by ...


Polyimide-based scintillators studied by ion beam induced luminescence

IEEE Transactions on Nuclear Science, 2005

New organic scintillators for ionizing radiation sensors are synthesized by dispersing dye molecules into chemically imidized polyimide hosts in order to obtain detection systems with improved radiation resistance with respect to the traditional polyvinyltoluene-based materials. Nile red (NR) and rhodamine B (RB) are dispersed at different concentrations in polyimides derived from the following monomers: 6FDA-DAD, 6FDA-DAB, and BPDA-3F. Scintillating thin ...


More Xplore Articles

Educational Resources on Ionizing radiation

Back to Top

IEEE-USA E-Books

  • Fiber optic ionizing radiation detector

    The authors describe a novel design for an ionizing radiation sensor using coiled optical fibers, which can be placed within or near a radioactive source. Coiled fiber samples were placed inside metallic and metal-matrix composite cylinders to evaluate the sensitivity of the materials. The system has been shown to have a sensitivity range of 10 to 100 kRad(Si). Further study has shown that the proposed experimental set-up can be used to determine the mass attenuation coefficient. The mass attenuation coefficient was then used to optimize the number of windings that would make the detector most effective for radiation detection. Another major advantage of this detector is that it will be possible to repair the damage caused by ionizing radiation. This can be done by heating the fibers to a moderate temperature and holding the temperature for a specific time in order to eliminate the color centers.<<ETX>>

  • Design of nonelectrode microwave-biased radiation detectors

    Actual ways of development of measuring microwave resonant systems with contactless inclusion of a sensor sensitive to ionizing radiation fulfilled from wide-gap compound semiconductor such as CdTe (CdZnTe) are offered. The numerical modeling and optimization of several kinds of such resonant systems has allowed approaching to a constructional design of effective radiating semiconductor microwave-biased sensors. It is expected, that the sensitivity of sensors being under consideration will not depend on capacity of absorbed doze of radiation. The most satisfactory detecting device is toroidal resonator, in capacitance backlash of which the sensor sensitive to radiation is installed, where the maximal intensity of electrical field with a high degree of uniformity takes place.

  • An Advanced Theory Of Stark Broadening For Diagnostics Of Dense Plasmas

    None

  • TID Effects in Deep N-Well CMOS Monolithic Active Pixel Sensors

    This paper is devoted to the study of total ionizing dose effects in deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) for particle tracking fabricated in a STMicroelectronics 130 nm process. DNW-MAPS samples were exposed to gamma-rays up to a final dose of 1100 krad(SiO<sub>2</sub>) and then subjected to a 100degC annealing cycle. Ionizing radiation tolerance was tested by monitoring the device noise properties and its response to charge injection through an external pulse generator throughout the irradiation and annealing campaign. The origins of performance degradation are discussed based on the results from radiation hardness characterization of single transistors belonging to the same CMOS technology and of test diodes reproducing the MAPS collecting electrode structure. Also circuit simulations have been performed to supply further evidence for the proposed degradation mechanisms.

  • Polyimide-based scintillators studied by ion beam induced luminescence

    New organic scintillators for ionizing radiation sensors are synthesized by dispersing dye molecules into chemically imidized polyimide hosts in order to obtain detection systems with improved radiation resistance with respect to the traditional polyvinyltoluene-based materials. Nile red (NR) and rhodamine B (RB) are dispersed at different concentrations in polyimides derived from the following monomers: 6FDA-DAD, 6FDA-DAB, and BPDA-3F. Scintillating thin films are produced by the spin coating technique. Scintillation tests are performed both on pure polyimides and on binary systems by means of ion beam induced luminescence (IBIL), in which the emission spectrum is collected during the irradiation of the films with a /sup 4/He/sup +/ beam. From the intensity and the degradation rate of the IBIL signal during irradiation, the scintillation efficiency with respect to NE102 and the radiation hardness of the produced films are calculated.

  • Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects

    Vertexing for the future International Linear Collider represents a challenging goal because of the high spatial resolution required with low material budget and high ionizing radiation tolerance. CMOS Monolithic Active Pixel Sensors (MAPS) represent a good potential solution for this purpose. Up to now many MAPS sensors have been developed. They are based on various architectures and manufactured in different processes. However, up so far, the sensor diode has not been the subject of extensive modelization and simulation. Published simulation studies of sensor-signal formation have been less numerous than measurements on real sensors. This is a cause for concern because such sensor is physically based on the partially depleted diode, in the vicinity of which the electric field collects the minority carriers generated by an incident MIP (minimum ionizing particle). Although the microscopic mechanisms are well known and modelized, the global physical mechanisms for signal formation are not very rigorously established. This is partly due to the presence of a predominant diffusion component in the charge transport. We present here simulations mainly based on the S-PISCES code, in which physical mechanisms affecting transport are taken into account. Diffusion, influence of residual carrier concentration due to the doping level in the sensitive volume, and more importantly charge trapping due to deep levels in the active (detecting) layer are studied together with geometric aspects. The effect of neutron irradiation is studied to assess the effects of deep traps. A comparison with available experimental data, obtained on processed MAPS before or after neutron irradiation will be introduced. Simulated reconstruction of the Minimum Ionizing Particle (MIP) point of impact in two dimensions is also investigated. For further steps, guidelines for process choices of next Monolithic Active Pixel Sensors are introduced.

  • A Corona-Charged Self-Biased Radiation Dosimeter

    In this letter, we report on a new solid-state structure for an integrating microdosimeter. The device consists of a silicon bar enclosed by a compound dielectric bilayer of silicon dioxide/parylene acting as an ionization getter/electret. The dielectric bilayer is corona charged to establish a self- biasing structure that achieves high sensitivity without the need for a large applied voltage. For a 0.5 × 0.7 × 0.3 mm3sensor with a dynamic range of 15 Gy, a sensitivity of 50 kΩ/Gy was measured.

  • Front-End Performance and Charge Collection Properties of Heavily Irradiated DNW MAPS

    Deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm technology have been exposed to γ-rays up to an integrated dose of about 10 Mrad and subjected to a 100 °C/168 h annealing cycle. Device tolerance to total ionizing dose has been evaluated by monitoring the change in charge sensitivity, noise and charge collection properties after each step of the irradiation and annealing campaign. Damage mechanisms and their relation to front-end architecture and sensor features are thoroughly discussed by comparing the response to ionizing radiation of different test structures and based on radiation induced degradation models in single MOS transistors.

  • Random Telegraph Signal in Monolithic Active Pixel Sensors

    CMOS Monolithic Active Pixel Sensors (MAPS) technology allows integrating very small sensing elements with a pixel pitch of ∼ 10 μm together with analogue and digital signal processing circuits into a monolithic chip, which may be thinned down to a thickness of ∼ 50 μm. These features make MAPS an interesting technology for a broad range of applications in charged particle tracking. Intense R&D was performed in the last years in order reach the necessary radiation hardness. In the context of these studies, radiation induced Random Telegraph Signal (RTS) was found to introduce a substantial amount of accidental (noise) hits. In this work, we present a first systematic investigation of the rate of these fake hits as function of environmental conditions like accumulated radiation dose and temperature. Moreover, strategies to reduce the impact of RTS are studied.

  • Radiation Exposure of a Lithium Niobate Crystal at High Temperatures

    Lithium niobate is being considered for use as the active element in piezoelectric transducers in a nuclear reactor. For tests in a simulation of this environment, a Y-cut disk of this material 1 cm in diameter and 0.1 cm thick was mounted in a holder designed to allow measurement of piezoelectric properties of the materials, and was exposed to 4 X 109 R of 60Co gamma rays at elevated temperatures in air. Exposure was at a dose rate of 1.75 X 107 R/h with approximately one half of the dose accumulated at 281°C and half at 537°C. The piezoelectric properties showed no changes that would affect the usefulness of the material for the intended purpose.



Standards related to Ionizing radiation

Back to Top

IEEE Recommended Practice for Measurements and Computations of Radio Frequency Electromagnetic Fields With Respect to Human Exposure to Such Fields, 100 kHz-300 GHz

Revise and develop specifications for preferred methods for measuring and computing external radiofrequency electromagnetic fields to which persons may be exposed. In addition, the document will specify preferred methods for the measurement and computation of the resulting fields and currents that are induced in bodies of humans exposed to these fields over the frequency range of 100 kHz to 300 ...


IEEE Standard for Safety Levels With Respect to Human Exposure to Electromagnetic Fields, 0-3 kHz

Develop safety levels for human exposure to electromagnetic fields from 0 to 3kHz. This standard will be based on the results of an evaluation of the relevant scientific literature and proven effects which are well established and for which thresholds of reaction are understood. Field limits will be derived from threshold current densities or internal electric fields.


Recommended Practice for Measurements and Computation of Electric, Magnetic and Electromagnetic Fields With Respect to Human Exposure to Such Fields, 0 - 100 kHz

This recommended practice describes 1) methods for measuring external electric and magnetic fields and contact currents to which persons may be exposed, 2) instrument characteristics and the methods for calibrating such instruments, and 3) methods for computation and the measurement of the resulting fields and currents that are induced in bodies of humans exposed to these fields. This recommended practice ...



Jobs related to Ionizing radiation

Back to Top