Ion implantation

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Ion implantation is a materials engineering process by which ions of a material are accelerated in an electrical field and impacted into another solid. (Wikipedia.org)






Conferences related to Ion implantation

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods and Modeling, and Accelerators.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


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Periodicals related to Ion implantation

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Ion implantation

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Xplore Articles related to Ion implantation

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EEPROM-based Charging-Effects Sensors for Plasma Etching and Ion Implantation

International Report on Wafer Level Reliability Workshop, 1992

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Theoretical Studies Of Plasma Ion Implantation

IEEE Conference Record - Abstracts. 1991 IEEE International Conference on Plasma Science, 1991

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High-dose Neutron Generation From Plasma Ion implantation

IEEE Conference Record - Abstracts. 1991 IEEE International Conference on Plasma Science, 1991

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Distribution functions of positive ions and electrons in a plasma near a surface

IEEE Transactions on Plasma Science, 2000

In this study, the velocity distribution functions of the ions and electrons in a collisional presheath and collisionless sheath of a plasma near a wall emitting and reflecting ions and electrons are systematically determined. The collisions in the presheath are modeled by a relaxation time approximation (namely, Bhatnagar-Gross-Krook model, or simply BGK model). To find the variation in electrostatic potential ...


Sheath overlap during large scale plasma source ion implantation

25th Anniversary, IEEE Conference Record - Abstracts. 1998 IEEE International Conference on Plasma Science (Cat. No.98CH36221), 1998

Summary form only given. We are investigating experimentally the effects of sheath overlap during plasma source ion implantation of a large workpiece of complex geometry. The workpiece consists of 1000 aluminum, automotive piston surrogates mounted on 4 racks; total surface area is over 16 m/sup 2/. The 4 racks are positioned parallel to each other, 0.25 m apart, in an ...


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Educational Resources on Ion implantation

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IEEE-USA E-Books

  • EEPROM-based Charging-Effects Sensors for Plasma Etching and Ion Implantation

    None

  • Theoretical Studies Of Plasma Ion Implantation

    None

  • High-dose Neutron Generation From Plasma Ion implantation

    None

  • Distribution functions of positive ions and electrons in a plasma near a surface

    In this study, the velocity distribution functions of the ions and electrons in a collisional presheath and collisionless sheath of a plasma near a wall emitting and reflecting ions and electrons are systematically determined. The collisions in the presheath are modeled by a relaxation time approximation (namely, Bhatnagar-Gross-Krook model, or simply BGK model). To find the variation in electrostatic potential with position, the model and analysis from Emmert et al. (1980), are used. Distribution functions of the ions and electrons in a collisionless presheath and sheath on a wall partially reflecting ions and electrons, therefore, can be exactly obtained. The reflections of the ions and electrons by a wall play important roles in studying heat transfer from a plasma sheath to a workpiece surface, and sputter etching and deposition, ion implantation, and ion scattering spectroscopy. Irrespective of ion and electron reflectivities, velocities of the ions in the presheath and sheath are of highly non-Maxwell-Boltzmann distributions. The electrons in the presheath are close to Maxwell-Boltzmann distributions, whereas those in the sheath are non-Maxwell-Boltzmann distributions. Even though the wall partially reflects ions and electrons, the Bohm's criterion is marginally satisfied at the sheath edge. The computed distribution functions for a completely absorbing surface agree with theoretical results provided in the literature. Good comparison of the resulted transport variables with available analytical work is presented in the companion paper.

  • Sheath overlap during large scale plasma source ion implantation

    Summary form only given. We are investigating experimentally the effects of sheath overlap during plasma source ion implantation of a large workpiece of complex geometry. The workpiece consists of 1000 aluminum, automotive piston surrogates mounted on 4 racks; total surface area is over 16 m/sup 2/. The 4 racks are positioned parallel to each other, 0.25 m apart, in an 8 m/sup 3/ vacuum chamber. The racks of pistons are immersed in a capacitive RF plasma, with an argon gas pressure of 0.1-0.6 mtorr. We implant the pistons with the plasma ions by repeatedly pulse biasing the workpiece to 20 kV for 20 /spl mu/sec. The plasma behavior during the pulse is monitored with a Langmuir probe placed in between 2 racks of pistons. At plasma densities less than 10/sup 15/ m/sup -3/ and low gas pressures, the sheaths between the racks of pistons overlap, resulting in non-uniform implantation of the plasma ions. In addition, sheath overlap causes a drop in the plasma potential between the racks of pistons. This reduces both the measured ion current to the workpiece and the energy of the implanted ions. At gas pressures of 0.5-0.6 mtorr, we observe the creation of a high density DC discharge in the potential well. The discharge is induced by ionization of the source gas by secondary electrons. While this produces a two order-of-magnitude increase in the measured ion current, the implantation energy is still low. We model the sheath behavior with the two-dimensional, particle-in-cell code XPDP2.

  • Optimization of treatment conditions for industrial gears in plasma immersion ion implantation (PIII) using particle-in-cell (PIC) simulation

    Summary form only given. Conventional line-of-sight ion implantation of industrial gears suffers from dose non-uniformity, and plasma immersion ion implantation (PIII) is an excellent alternative. The technique has attracted the interests of engineers and scientists and been applied to the treatment of three-dimensional samples such as ball bearings, oil pumps, and biomedical products. In this paper, we employ particle-in-cell (PIC) simulation to configure the optimal treatment conditions for industrial gears. Owing to the periodic structure of the sawteeth, we need only to examine one tooth using a 2-dimensional model. The particle impact angle and local incident dose along the (r-theta) plane change during each implantation pulse. Therefore, it is important to determine the potential, electric field, and ion density distribution around the gear in order to optimize the implant uniformity and dose. Our simulation results show that most ions are accelerated at a normal angle towards the bottom of the tooth when the plasma sheath thickness is larger than the outer radius of the gear. Our model allows the determination of a suitable range of implantation pulse for different gear dimensions in order to attain better implant dose and energy uniformity on the sidewalls of the tooth.

  • Ultra-shallow p+/n junction formed by plasma source ion implantation and solid boron source

    Summary form only given. Using plasma source ion implantation (PSII), a novel technique has been developed to fabricate ultrashallow p/sup +//n junctions for the application of sub-micron CMOS source/drain formation. This process avoids the hazards and costs of handling highly toxic and reactive gases. In this method, a thin boron layer is first sputter deposited onto the wafer from a solid boron target. Then PSII with Ar plasma is used to knock boron atoms into the Si substrate by means of ion beam mixing. Ultrashallow p/sup +//n junctions with junction depths ranging from 27 to 85 nm have been fabricated with this technique. In addition to Ar PSII, Ne PSII has been investigated for forming shallow p/sup +//n junctions with the same technique, because Ar implantation was reported to form defects which are difficult to remove during the annealing steps. Preliminary results show that neon PSII results in more shallow boron profile, lower boron dose and higher sheet resistance.

  • Experimental analysis of active species generated by atmospheric plasma

    Summary form only given, as follows. Summary form only given. In atmospheric plasma process, some active species, like ozone and hydroxy radical, generate from reaction among nitrogen, oxygen and water vapor etc. For better understanding about generation of active species by atmospheric plasma, OES analyses were carried out in atmospheric pressure in multipoint corona and some DBD types Our experimental DBD types are volume DBD, surface DBD and coplanar DBD We compared with the relative intensity of active species from OES data And we also calculated the intensity ratio of the first negative system of N/sub 2//sup +/ (391.4 nm) to the second positive system of N/sub 2/ (337.1 nm) to know which type of plasma generate the electrons with higher energy. From these results, we concluded the relationship between the intensity of electron energy and generation of active species in each type of the atmospheric plasma.

  • Particle-in-cell simulation of plasma immersion ion implantation (PIII) of industrial gears

    Summary form only given. Plasma immersion ion implantation (PIII) has emulates conventional beam-line ion implantation in that the implantation time is independent of the sample size and large industrial components of an irregular shape can be treated relatively easily due to its non-line-of-sight characteristic. For example, due to the non-planar and periodic structure of industrial gears, conventional deposition and beam-line treatment techniques are not easily implemented. In addition, as they are used in space, typically as a component in a satellite, conventional coatings may not function desirably either, and PIII is the ideal technique in this case. In this work, we employ a theoretical model to investigate the PIII process of this important industrial component. To simulate implantation into the three- dimensional structure of a commercial gear, we work in cylindrical coordinates. Due to the periodic structure of the saw-teeth, we only need to simulate the volume of one tooth. 2D simulation along the (r-0) plane is carried out by the particle-in-cell (PIC) method. The incident dose and impact angle along the surface of the tooth are derived and our results indicate that a long implantation pulse will implant more ions at the bottom of the tooth at normal angle since the momentum of the incoming ions accelerated at the middle and end period of the pulse will overcome the attractive force from the sidewall of the tooth. Therefore, shorter pulse duration will implant the whole surface of the tooth more uniformly. We will also provide an estimation on the preferred pulse duration for different tooth dimensions.

  • Cathodic arc modulator systems for metallic plasma ion implantation

    This paper describes the electrical design and operation of a cathodic arc modulator system for metallic plasma ion implantation. Depending on the ion implantation process recipe, various repetition rates, pulse widths and currents are required. In addition, the cathodic arc system may be synchronized with a higher voltage "target" modulator system. The cathodic arc is water cooled and usually uses a self-generated axial B-field, by use of a series connected solenoid around the arc anode. Typical arc currents of 800 amperes may be utilized with pulse widths ranging from 20 /spl mu/S to 4 mS. Typical pulse repetition frequencies may exceed 400 Hz, with overall system power limited by the presently available 10 kW transformer-rectifier. The cathodic arc modulator system consists of a command charged 10 kV trigger generator, a high voltage arc "starter", and a low voltage, high current arc sustain circuit. The arc start and sustain circuits are independently adjustable and utilize a common IGBT device in a "hot-deck" configuration. This paper will provide circuit design and performance information in addition to various process applications.



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