Conferences related to Interface states

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2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2020 IEEE 29th International Symposium on Industrial Electronics (ISIE)

ISIE focuses on advancements in knowledge, new methods, and technologies relevant to industrial electronics, along with their applications and future developments.


2020 IEEE International Conference on Industrial Technology (ICIT)

ICIT focuses on industrial and manufacturing applications of electronics, controls, communications, instrumentation, and computational intelligence.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Conference on Robotics and Automation (ICRA)

The International Conference on Robotics and Automation (ICRA) is the IEEE Robotics and Automation Society’s biggest conference and one of the leading international forums for robotics researchers to present their work.


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Periodicals related to Interface states

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Biomedical Engineering, IEEE Reviews in

The IEEE Reviews in Biomedical Engineering will review the state-of-the-art and trends in the emerging field of biomedical engineering. This includes scholarly works, ranging from historic and modern development in biomedical engineering to the life sciences and medicine enabled by technologies covered by the various IEEE societies.


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


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Most published Xplore authors for Interface states

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Xplore Articles related to Interface states

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IEEE Draft Standard for Local and metropolitan area networks Part 16: Air Interface for Broadband Wireless Access Systems Amendment: Higher Reliability Networks

IEEE P802.16n/D5, August 2012, 2012

Amendment to IEEE 802.16. This amendment specifies protocol enhancements to the medium access control layer (MAC) for enabling increased robustness and alternate radio path establishment in degraded network conditions. Limited orthogonal frequency-division multiple access physical layer (OFDMA PHY) extensions are included for enabling operation with radio path redundancy and direct communication between subscriber stations. Also mobile base stations and mobile ...


IEEE Draft Standard for WirelessMAN-Advanced Air Interface for Broadband Wireless Access Systems

IEEE P802.16.1/D4, February 2012, 2012

This standard specifies the WirelessMAN-Advanced Air Interface, an enhanced air interface designated as "IMT-Advanced" by the International Telecommunication Union -- Radiocommunication Sector (ITU-R).


IEEE Draft Standard for WirelessMAN-Advanced Air Interface for Broadband Wireless Access Systems - Amendment: Higher Reliability Networks

IEEE P802.16.1a/D5, August 2012, 2012

Amendment to IEEE 802.16. This amendment specifies protocol enhancements to the medium access control layer (MAC) for enabling increased robustness and alternate radio path establishment in degraded network conditions. Amendment to IEEE Std 802.16. Limited WirelessMAN-Advanced physical layer extensions are included for enabling operation with radio path redundancy and direct communication between subscriber stations. Also mobile base stations and mobile ...


IEEE Standard for Design and Verification of Low-Power Integrated Circuits

IEEE Std P1801/D14, January 23, 2013, 2013

A method is provided for specifying power intent for an electronic design, for use in verification of the structure and behavior of the design in the context of a given power management architecture, and for driving implementation of that power management architecture. The method supports incremental refinement of power intent specifications required for IP-based design flows.


IEEE Draft Standard for WirelessMAN-Advanced Air Interface for Broadband Wireless Access Systems

IEEE P802.16.1/D3 Nov ember 2011, 2011

This standard specifies the WirelessMAN-Advanced Air Interface, an enhanced air interface designated as "IMT-Advanced" by the International Telecommunication Union -- Radiocommunication Sector (ITU-R).


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Educational Resources on Interface states

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IEEE-USA E-Books

  • IEEE Draft Standard for Local and metropolitan area networks Part 16: Air Interface for Broadband Wireless Access Systems Amendment: Higher Reliability Networks

    Amendment to IEEE 802.16. This amendment specifies protocol enhancements to the medium access control layer (MAC) for enabling increased robustness and alternate radio path establishment in degraded network conditions. Limited orthogonal frequency-division multiple access physical layer (OFDMA PHY) extensions are included for enabling operation with radio path redundancy and direct communication between subscriber stations. Also mobile base stations and mobile relay stations are supported.

  • IEEE Draft Standard for WirelessMAN-Advanced Air Interface for Broadband Wireless Access Systems

    This standard specifies the WirelessMAN-Advanced Air Interface, an enhanced air interface designated as "IMT-Advanced" by the International Telecommunication Union -- Radiocommunication Sector (ITU-R).

  • IEEE Draft Standard for WirelessMAN-Advanced Air Interface for Broadband Wireless Access Systems - Amendment: Higher Reliability Networks

    Amendment to IEEE 802.16. This amendment specifies protocol enhancements to the medium access control layer (MAC) for enabling increased robustness and alternate radio path establishment in degraded network conditions. Amendment to IEEE Std 802.16. Limited WirelessMAN-Advanced physical layer extensions are included for enabling operation with radio path redundancy and direct communication between subscriber stations. Also mobile base stations and mobile relay stations are supported.

  • IEEE Standard for Design and Verification of Low-Power Integrated Circuits

    A method is provided for specifying power intent for an electronic design, for use in verification of the structure and behavior of the design in the context of a given power management architecture, and for driving implementation of that power management architecture. The method supports incremental refinement of power intent specifications required for IP-based design flows.

  • IEEE Draft Standard for WirelessMAN-Advanced Air Interface for Broadband Wireless Access Systems

    This standard specifies the WirelessMAN-Advanced Air Interface, an enhanced air interface designated as "IMT-Advanced" by the International Telecommunication Union -- Radiocommunication Sector (ITU-R).

  • Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation

    This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon structure under off -state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant on-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric <i>I</i>- <i>V</i> characteristics indicate that the interface states are located near the drain side. Moreover, the ISE-TCAD simulation tool was utilized to model the degradation mechanism and analyze trap states distribution. Although both the vertical and lateral electrical fields are factors for degradation and hot-hole injection, the degradation is mainly affected by the lateral electrical field over a critical point.

  • Irradiated Silicon Gate MOS Device Bias Annealing

    N-channel silicon gate MOS transistors exhibit positive threshold shifts when bias annealed following ionizing irradiation exposure. The threshold shift is probably due to electrons tunneling into the oxide and recombining at trapping centers near the Si/Sio2 interface. The threshold shifts are large enough in some cases to cause functional failures of MOS integrated circuits.

  • A detailed study of the changes in buried oxide charge as a function of processing and irradiation

    The use of the quick-turn (QT) method of forming a simple buried-oxide capacitor (BOXCAP) to characterize the effects of process variations on the properties of the oxide and silicon layers is discussed. In particular, the results of a matrix of various anneal conditions, and an analysis of the effects of using a screen oxide during the SIMOX implantation are presented. The results indicate that the generation lifetime continues to improve with anneal temperature and time, but the fixed charge in the oxide increases with longer anneal times. With regard to the screen oxide investigation, it was found that wafers implanted with a screen oxide had long generation times, but also had more fixed oxide charge. Buried-oxide capacitor (BOXCAP) C-V analysis provides very useful information regarding the radiation response of the buried oxide. This technique has been used to characterize the oxide charges generated as a function of processing and substrate bias.<<ETX>>

  • Temperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect-Centric perspective

    In this work, we present an analysis to separate the interface states generation from the oxide traps generation during channel hot carrier degradation, for several temperatures. At first, we use the defect-centric framework in order to extract the total number of traps generated during the channel hot carrier stress. Then, we study the exponent of the power law of the number of traps in function of the stress time. Under this analysis, we can extract the ratio of generated interface states with respect to the oxide traps caused by the CHC degradation. Finpower law of the number of traps in function of the stress time. Under this analysis, we can extract the ratio of generated interface states with respect to the oxide traps caused by the CHC degradation. Finally, we found that interface states are twice larger than oxide traps, which canally, we found that interface states are twice larger than oxide traps, which can be explained by extracting the activation energy for both generation processes.

  • The reduction of the leakage current of radiation detectors by a simple cap implantation process

    The depletion layer of PN junction of semiconductor radiation detectors usually spreads and reaches to the back side of the wafer while it spreads laterally to a distance comparable to the thickness of the wafer during operation. The area of the lateral spreading has a large fraction relative to the core active region, and an extra guard ring structure is difficult to adopted for some imaging detector array such as "Edge On" stripe detectors. Because there is a great deal of interface states and much higher density of defects at the SiO/sub 2/-Si interface than that in the bulk, surface leakage current arises from the lateral spreading of the depletion layer. We demonstrate in this report that a simple cap implantation at the surface of a radiation stripe detector can effectively reduce the surface leakage current.



Standards related to Interface states

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IEEE Application Guide for Distributed Digital Control and Monitoring for Power Plants


IEEE Standard Criteria for Digital Computers in Safety Systems of Nuclear Power Generating Stations

This standard serves to amplify criteria in IEEE Std 603-2009, IEEE Standard Criteria for Safety Systems for Nuclear Power Generating Stations, to address the use of computers as part of safety systems in nuclear power generating stations. The criteria contained herein, in conjunction with criteria in IEEE Std 603-2009, establish minimum functional and design requirements for computers used as components ...


IEEE Standard for Automatic Meter Reading via Telephone - Network to Utility Controller

Produce a standard interface between the utility controller and the switched telephone network.



Jobs related to Interface states

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