Insulated gate bipolar transistors
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The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.
The ITherm Conference series is the leading international venue for scientific and engineering exploration of thermal, thermomechanical, and emerging technology issues associated with electronic devices, packages, and systems.
Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies
ISIE focuses on advancements in knowledge, new methods, and technologies relevant to industrial electronics, along with their applications and future developments.
APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.
Fundamentals of Electric Power Engineering: From Electromagnetics to Power Systems, None
This chapter aims to give sufficient knowledge of how electric power is converted using electronic power converters, in order to facilitate the study of electric drives. Furthermore, it presents how inverters operate to allow power to be fed into grids from low power power plants such as small photovoltaic generators. A concise description of the behaviour of the devices, as ...
1994 Fifth International Conference on Power Electronics and Variable-Speed Drives, 1994
27th European Solid-State Device Research Conference, 1997
Power Electronics for Renewable Energy Systems, Transportation and Industrial Applications, None
The chapter points out that sequential switching is not only applicable to IGBT modules with integrated diodes mounted closely on a heat sink, but also to complete industrial standard two‐level voltage source inverters (VSIs). Thus, the power capability and the overall switching frequency of these products can be increased by using several of them in parallel with sequential switching. Using ...
IEEE Transactions on Electron Devices, 1998
Two approaches of forming IGBTs with shallow emitter ballast have been investigated in this study. These designs are compared in terms of their layout scheme, fabrication steps and device performance. This shallow emitter ballast provides the necessary trade-off between on-state and ruggedness of IGBTs. Using this concept 600 V IGBTs with an on-voltage of /spl sim/1.6 V@100 A/cm/sup 2/, turn-off ...
Kaizad Mistry of Intel accepts the IEEE Corporate Innovation Award - Honors Ceremony 2016
APEC 2010 - Exhibitor Overview
THz Transistors: Present and Future
Maker Faire 2008: Spectrum's Digital Clock Contest Winner
26th Annual MTT-AP Symposium and Mini Show - Ray Pengelly
Interview with Marcel J.M. Pelgrom - The Pelgrom Law: IEEE Gustav Robert Kirchhoff Award Recipient
Abbas El Gamal accepts the IEEE Richard W. Hamming Medal - Honors Ceremony 2016
Transistors for THz Systems
Neuromorphic Chips - Kwabena Boahen: 2016 International Conference on Rebooting Computing
Silicon THz: an Opportunity for Innovation
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
RF-pFET in Fully Depleted SOI Demonstrates 420GHz FT: RFIC Industry Showcase 2017
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
Steep Slope Devices: Advanced Nanodevices - Nicolo Oliva at INC 2019
Micro-Apps 2013: Integrated Electro-Thermal Design of a SiGe PA
William S. Carter and Stephen Trimberger - 2018 Donald O. Pederson Award in Solid-State Circuits at IEEE ISSCC
IMS 2014: A 600 GHz Low-Noise Amplifier Module
Quantum Computation - ASC-2014 Plenary series - 4 of 13 - Tuesday 2014/8/12
The Evolution and Future of RF Silicon Technologies for THz Applications
This chapter aims to give sufficient knowledge of how electric power is converted using electronic power converters, in order to facilitate the study of electric drives. Furthermore, it presents how inverters operate to allow power to be fed into grids from low power power plants such as small photovoltaic generators. A concise description of the behaviour of the devices, as well as an introduction to approximations in such a way that they can be analysed using the linear circuit concepts. Rectifiers are devices that convert AC power into DC without affecting (if we disregard inner power losses) the transferred power. This concept is illustrated, showing single- phase and three-phase rectifiers.
The chapter points out that sequential switching is not only applicable to IGBT modules with integrated diodes mounted closely on a heat sink, but also to complete industrial standard two‐level voltage source inverters (VSIs). Thus, the power capability and the overall switching frequency of these products can be increased by using several of them in parallel with sequential switching. Using this approach, a novel electrical test bench for drive inverters can be set up with a minimum effort on design and development. This provides an alternative for manufacturers of drive inverters to test their complete product range under real power levels without the requirement for a multitude of real machines.The discussion provided in the chapter proves that the so called virtual machine (VM) is a Hardware‐in‐the‐Loop system allowing an inverter to be tested at real power levels without the need for installing and operating real machines. The VM has the same characteristics as a real induction motor or even a synchronous motor. Different machines and their respective load conditions can be emulated by software, which means that the drive inverter under test can operate in its normal mode (as usual). No modification has to be done to the inverter or to the control unit.
Two approaches of forming IGBTs with shallow emitter ballast have been investigated in this study. These designs are compared in terms of their layout scheme, fabrication steps and device performance. This shallow emitter ballast provides the necessary trade-off between on-state and ruggedness of IGBTs. Using this concept 600 V IGBTs with an on-voltage of /spl sim/1.6 V@100 A/cm/sup 2/, turn-off energy of /spl sim/30 /spl mu/J/A, short-circuit time of /spl sim/27 /spl mu/s, and a maximum UIS energy of /spl sim/13.4 mJ/A have been fabricated.
Local heating effects are simulated for both types of transistor, by solving the current continuity and Poisson equation fully in 2-Dimensions and calculating local heating from the resulting Current Density and Electric Field. The effect of Generation-Recombination heating is also included and compared with the case where this is not significant. Finally this heat-source term is used in the solution of the Heat Equation in order to find the steady state temperature distribution. It is found that strong local heating effects occur in both devices with apparent cooling occurring in some regions where recombination has been ignored, which may have a beneficial effect on the locally heated regions.<<ETX>>
The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage waveforms for general external drive, load, and feedback circuits. It is shown that nonquasi-static effects limit the influence of the drive circuit on the time rate-of-change of the anode voltage. Model results are compared with measured turn-on and turn-off waveforms for different drive, load, and feedback circuits and for different IGBT base lifetimes. The effective output capacitance of the IGBT at turn-off is several orders of magnitude larger than that of the structurally equivalent power MOSFET and depends upon the device base lifetime because the base charge at turn-off depends upon the device base lifetime. However, the gate drain feedback capacitance is unchanged from the value for the structurally equivalent power MOSFET. Thus, the minimum gate resistance that influences the anode voltage rate-of-rise at turn-off is several orders of magnitude larger than that for the power MOSFET and varies with device base lifetime.<<ETX>>
This paper reports the internal dynamics of insulated gate bipolar transistors (IGBT's) under short-circuit switching conditions. Short-circuit performance of IGBT's has been studied in detail with the aid of extensive measurements and numerical simulations. An advanced two-dimensional (2-D) mixed device and circuit simulator that incorporates the self-heating mechanism has been employed to examine IGBT behavior under short-circuit stress. Latch-up free punchthrough IGBT has been examined. It is shown that hot-spot generation due to current crowding and impact ionization is the cause of breakdown of an IGBT under short-circuit switching.
IGBTs with blocking voltage values of 600 V, 1200 V and 1600 V are available for several applications. In traction applications, 600 V and 750 V DC mains are widely distributed. The 1500 V DC mains becomes more and more of interest in Asia, South America and in Europe. Industrial applications have AC mains of 360 V, 500 V, 660 V, etc. While 1600 V IGBT-modules meet the requirements in 750 V DC mains application, there is no alternative to GTOs for higher voltages. This paper describes a 3300 V IGBT-module for application in diesel- electric trains, high speed trains and underground/downtown trains, the latter operating directly on the 1500 V DC mains with motor power ratings up to 1.5 MW. Three-level inverters with IGBTs allow operation at 3000 V DC mains or at 2200 V AC line voltages in industrial power converters which is widely distributed in North America.
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