Indium phosphide

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Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. (Wikipedia.org)






Conferences related to Indium phosphide

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Semiconductor Laser Conference (ISLC)

The ISLC is dedicated to the latest developments in semiconductor lasers, amplifiers and LEDs, including: Semiconductor Optical Amplifiers, Silicon compatible lasers, VCSELs, Photonic band-gap and microcavity lasers, Grating controlled lasers, Multi-segment and ring lasers, Quantum cascade and interband, Sub-wavelength scale nanolasers, Mid IR and THz sources, InP, GaAs and Sb materials, Quantum dot lasers, High power and high-brightness lasers, GaN and ZnSe based UV to visible LEDs, Communications lasers, Semiconductor integrated optoelectronics.

  • 2018 IEEE International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2020 Optical Fiber Communications Conference and Exhibition (OFC)

The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


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Periodicals related to Indium phosphide

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Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


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Most published Xplore authors for Indium phosphide

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Xplore Articles related to Indium phosphide

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High speed devices

2009 Device Research Conference, 2009

None


Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f<sub>T</sub>and 2 S/mm extrinsic transconductance"

IEEE Electron Device Letters, 1999

Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.


Corrections to "Two and three terminal planar InP TEDs"

IEEE Electron Device Letters, 1980

Corrections are made to page 71, column 2, Figure 4.


Carrier Transport in High-mobility MOSFETs

Carrier Transport in Nanoscale MOS Transistors, None

The remarkable advancement of LSI circuit technology has been primarily based on the downsizing of metal-oxide-semiconductor field-effect transistor (MOSFET). This chapter examines practical advantages of the new channel materials using semi-classical MC and quantum mechanical Wigner MC simulations, where it considers scattering effects, quantum mechanical effects and new device structure. It discusses the quasi-ballistic transport in high- mobility MOSFETs-that is, ...


Electron Transport in Thin-Base InP/InGaAs HBT's

50th Annual Device Research Conference, 1992

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IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Indium phosphide"

IEEE-USA E-Books

  • High speed devices

    None

  • Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f<sub>T</sub>and 2 S/mm extrinsic transconductance"

    Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.

  • Corrections to "Two and three terminal planar InP TEDs"

    Corrections are made to page 71, column 2, Figure 4.

  • Carrier Transport in High-mobility MOSFETs

    The remarkable advancement of LSI circuit technology has been primarily based on the downsizing of metal-oxide-semiconductor field-effect transistor (MOSFET). This chapter examines practical advantages of the new channel materials using semi-classical MC and quantum mechanical Wigner MC simulations, where it considers scattering effects, quantum mechanical effects and new device structure. It discusses the quasi-ballistic transport in high- mobility MOSFETs-that is, the channel materials are III-V semiconductors, Ge and strained-Si, using the quantum-corrected Monte Carlo (MC) simulation. The chapter investigates the influence of quantum transport effects in ultrashort- channel III-V MOSFETs, based on a comparison between Wigner Monte Carlo (WMC) simulations, in which both quantum transport and carrier scattering effects can be fully incorporated, and considers conventional Boltzmann MC (BMC) simulation, in which no quantum transport effects. To accurately predict the electrical characteristics of nanoscale devices at normal conditions, device simulation must reliably consider both quantum and scattering effects in carrier transport.

  • Electron Transport in Thin-Base InP/InGaAs HBT's

    None

  • Oscillator and amplifier devices for millimeter applications

    As radio communications (including mobile) move into the millimeter wave range, greatly expanded applications for active devices operating in this range can be foreseen. The merits and demerits of GaAs and Si IMPATT diodes, GaAs and InP transferred-electron devices, and GaAs and InP FETs, for use in the 15-100 GHz frequency range, will be covered.

  • Prizewinners from previous European Microwave Conferences

    None

  • Post-deadline papers [abstracts only]

    Provides an abstract for each of the presentations and a brief professional biography of each presenter. The complete presentations were not made available for publication as part of the conference proceedings.

  • Growth Of InP Based Strain Compensated Multiple Quantum Wells By OMCVD

    None

  • Thermal resistance of InAs/InP quantum dot laser

    NOTICE TO THE READER It is recommended and agreed upon by the authors and the Editor-in-Chief of the IEEE Journal of Selected Topics in Quantum Electronics that the following article: &#x201C;Thermal Resistance of InAs/InP Quantum Dot Laser,&#x201D; by S. G. Li, Q. Gong, C. F. Cao, X. Z. Wang, J. Y. Yan, Y. Wang and H. L. Wang, DOI: 10.1109/JSTQE.2014.2302355 is withdrawn and should not be considered for citation use. Editor-in-Chief, IEEE Journal of Selected Topics in Quantum Electronics



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