Conferences related to Indium compounds

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2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE International Semiconductor Laser Conference (ISLC)

The ISLC is dedicated to the latest developments in semiconductor lasers, amplifiers and LEDs, including: Semiconductor Optical Amplifiers, Silicon compatible lasers, VCSELs, Photonic band-gap and microcavity lasers, Grating controlled lasers, Multi-segment and ring lasers, Quantum cascade and interband, Sub-wavelength scale nanolasers, Mid IR and THz sources, InP, GaAs and Sb materials, Quantum dot lasers, High power and high-brightness lasers, GaN and ZnSe based UV to visible LEDs, Communications lasers, Semiconductor integrated optoelectronics.

  • 2018 IEEE International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

ASMC is the leading international technical conferences for discussing solutions that improve the collective manufacturing expertise of the semiconductor industry. Solving the challenges presented by semiconductor manufacturing has been a combined effort by device makers, equipment and materials suppliers, and academics. ASMC provides an unparalleled platform for semiconductor professionals to network and learn the latest in the practical application of advanced manufacturing strategies and methodologies. Technical presentations at ASMC highlight industry innovations with specific results.


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Periodicals related to Indium compounds

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Latin America Transactions, IEEE (Revista IEEE America Latina)

The IEEE Region 9 is releasing the IEEE Latin America Transactions to enable the publication of non-published and technically excellent papers from Latin American engineers, in Spanish or Portuguese languages. Engineers and researchers from Portugal and Spain (and others countries with the same language) are also very welcome to submit their proposals.


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Most published Xplore authors for Indium compounds

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Xplore Articles related to Indium compounds

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High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam Epitaxy

[1991] 49th Annual Device Research Conference Digest, 1991

None


IEE Colloquium on 'InP Based Materials, Devices and Integrated Circuits' (Digest No.111)

IEE Colloquium on InP Based Materials, Devices and Integrated Circuits, 1990

None


Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f<sub>T</sub>and 2 S/mm extrinsic transconductance"

IEEE Electron Device Letters, 1999

Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.


Prospects of InP/InGaAs HBTs for low power and high speed analogue applications

IEE Colloquium on Low Power Analogue and Digital VLSI: ASICS, Techniques and Applications, 1995

In this paper, we investigate the inherent advantages of the InP/InGaAs system for low power and high speed analogue applications. Heterojunction Bipolar Transistors (HBTs) based on various III-V compound semiconductors including AlGaAs/GaAs, InGaP/GaAs and InP/InGaAs, have been fabricated and transistor characteristics were measured accordingly. To demonstrate the suitability of using InP-based HBTs for low power analogue applications, we compared the ...


1.55-/spl mu/m bottom-emitting InAlGaAs VCSELs with Al/sub 2/O/sub 3//a-Si thin-film pairs as a top mirror

The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004., 2004

We demonstrate a 1.55-/spl mu/m InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapor deposition. AI/sub 2/O/sub 3/-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through single mode fiber are reported in the speed of 2.5 Gbit/s.


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Educational Resources on Indium compounds

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IEEE-USA E-Books

  • High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam Epitaxy

    None

  • IEE Colloquium on 'InP Based Materials, Devices and Integrated Circuits' (Digest No.111)

    None

  • Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f<sub>T</sub>and 2 S/mm extrinsic transconductance"

    Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.

  • Prospects of InP/InGaAs HBTs for low power and high speed analogue applications

    In this paper, we investigate the inherent advantages of the InP/InGaAs system for low power and high speed analogue applications. Heterojunction Bipolar Transistors (HBTs) based on various III-V compound semiconductors including AlGaAs/GaAs, InGaP/GaAs and InP/InGaAs, have been fabricated and transistor characteristics were measured accordingly. To demonstrate the suitability of using InP-based HBTs for low power analogue applications, we compared the turn-on voltages of the InP/InGaAs HBTs with typical GaAs-based HBTs as well as with the commercial Si bipolar transistors. The results obtained showed clearly that, among all the material systems studied, the InP/In/sub 0.53/Ga/sub 0.47/As HBTs have the lowest turn-on voltage (0.2 V). This is in good agreement with the theoretical prediction.

  • 1.55-/spl mu/m bottom-emitting InAlGaAs VCSELs with Al/sub 2/O/sub 3//a-Si thin-film pairs as a top mirror

    We demonstrate a 1.55-/spl mu/m InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapor deposition. AI/sub 2/O/sub 3/-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through single mode fiber are reported in the speed of 2.5 Gbit/s.

  • Electroluminescence from InGaAs/InAlAs HEMTs

    Electroluminescence has been observed from InGaAs/lnAlAs HEMTs under low bias conditions confirming the presence of holes caused by impact ionisation. The field required for the onset of electroluminescence and the kink effect are similar, suggesting that the kink effect is associated with impact ionisation.<<ETX>>

  • Wavelength tunable two-pad ridge waveguide distributed Bragg reflector InGaAs-GaAs quantum well lasers

    Carrier injection in the grating section is used to tune the emission wavelength of a single growth step, single frequency, ridge waveguide InGaAs/GaAs quantum well distributed Bragg reflector laser with two top contacts. Single longitudinal mode emission with over 30 dB of sidemode suppression is observed throughout a tuning range of 6 nm with 60 mA of injection current in the grating section. The tuning mechanism for these devices is dominated by current injection heating rather than carrier depression of the refractive index.<<ETX>>

  • High power InAlAs/InGaAs/InP-HFET grown by MOVPE

    In this study we report the impact of an extended lateral gate-recess process in order to reduce the high electric field at the drain end of the gate and so to improve the breakdown performance. At first, we focus on an HFET fabricated by optical lithography (L/sub g/=0.7 /spl mu/m). The influence of various gate recess procedures on both the breakdown voltage and the drain saturation current is studied for various thickness of the barrier and supply layer, respectively. High power class A amplifiers exhibiting DC (RF) power capabilities in the range of 4-5 W/mm (0.5-0.75 W/mm) are presented. Then, we introduce a hybrid lithography process combining both optical and electron beam lithography. In this way a shorter gate (L/sub g/=0.35 /spl mu/m) is asymmetrically positioned in an extended lateral gate recess which enables both high breakdown voltage and increased cut off frequency.

  • Elliptic waveguide beam focusing and collimating elements in InP: analysis and experiment

    A new waveguide focusing and collimating element which uses an elliptically shaped beam converter has been analysed and experimentally tested. The experimental results show good agreement with the designed values. These elements are index contrast insensitive and compact and only need simple waveguide technology.

  • Gated Geiger mode operation and after pulse probability measurement of the InAlAs APD

    To investigate the after pulse process and the device design for after pulse reduction, we fabricated an InAlAs-APD with two-step mesa structure. We report the after pulse probability for the InAlAs multiplication layer for the first time.



Standards related to Indium compounds

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Jobs related to Indium compounds

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