Indium

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Indium is a chemical element with chemical symbol In and atomic number 49. (Wikipedia.org)






Conferences related to Indium

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2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

ASMC is the leading international technical conferences for discussing solutions that improve the collective manufacturing expertise of the semiconductor industry. Solving the challenges presented by semiconductor manufacturing has been a combined effort by device makers, equipment and materials suppliers, and academics. ASMC provides an unparalleled platform for semiconductor professionals to network and learn the latest in the practical application of advanced manufacturing strategies and methodologies. Technical presentations at ASMC highlight industry innovations with specific results.


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.


2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)

DNA Nanotechnology Micro-to-nano-scale Bridging Nanobiology and Nanomedicine Nanoelectronics Nanomanufacturing and Nanofabrication Nano Robotics and Automation Nanomaterials Nano-optics, Nano-optoelectronics and Nanophotonics Nanofluidics Nanomagnetics Nano/Molecular Heat Transfer & Energy Conversion Nanoscale Communication and Networks Nano/Molecular Sensors, Actuators and Systems


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE 58th Conference on Decision and Control (CDC)

The CDC is recognized as the premier scientific and engineering conference dedicated to the advancement of the theory and practice of systems and control. The CDC annually brings together an international community of researchers and practitioners in the field of automatic control to discuss new research results, perspectives on future developments, and innovative applications relevant to decision making, systems and control, and related areas.The 58th CDC will feature contributed and invited papers, as well as workshops and may include tutorial sessions.The IEEE CDC is hosted by the IEEE Control Systems Society (CSS) in cooperation with the Society for Industrial and Applied Mathematics (SIAM), the Institute for Operations Research and the Management Sciences (INFORMS), the Japanese Society for Instrument and Control Engineers (SICE), and the European Union Control Association (EUCA).


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Periodicals related to Indium

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Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Broadcasting, IEEE Transactions on

Broadcast technology, including devices, equipment, techniques, and systems related to broadcast technology, including the production, distribution, transmission, and propagation aspects.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


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Most published Xplore authors for Indium

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Xplore Articles related to Indium

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Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f<sub>T</sub>and 2 S/mm extrinsic transconductance"

IEEE Electron Device Letters, 1999

Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.


Characteristics of Inaias/ingaasp Quantum-Well Hemts

[1991] 49th Annual Device Research Conference Digest, 1991

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Suppression of the kink effect in InGaAs/InAlAs HEMTs grown by MBE by optimizing the InAlAs buffer layer

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992

The authors have examined the effects of InP substrate preparation and InAlAs growth temperature on the structural, electrical. and optical properties of In/sub 0.52/Al/sub 0.48/As layers grown on InP substrate. The substrate cleanliness affects the InAlAs growth mode while the growth temperature determines the kinetics of growth. It is concluded that the optimum InAlAs buffer layers have to be grown ...


High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam Epitaxy

[1991] 49th Annual Device Research Conference Digest, 1991

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Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

IEEE Transactions on Microwave Theory and Techniques, 1997

A new small-signal and noise-equivalent circuit for heterostructure field- effect transistors (HFET's), including the influence of impact-ionization and gate-leakage current on the electronic properties, is presented. The capability of the new model is demonstrated by bias-dependent investigations of the high-frequency (HF) (45 MHz up to 40 GHz) and noise behavior (2 GHz up to 18 GHz) of the InAlAs/InGaAs/InP HFET. ...


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IEEE.tv Videos

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IEEE-USA E-Books

  • Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f<sub>T</sub>and 2 S/mm extrinsic transconductance"

    Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.

  • Characteristics of Inaias/ingaasp Quantum-Well Hemts

    None

  • Suppression of the kink effect in InGaAs/InAlAs HEMTs grown by MBE by optimizing the InAlAs buffer layer

    The authors have examined the effects of InP substrate preparation and InAlAs growth temperature on the structural, electrical. and optical properties of In/sub 0.52/Al/sub 0.48/As layers grown on InP substrate. The substrate cleanliness affects the InAlAs growth mode while the growth temperature determines the kinetics of growth. It is concluded that the optimum InAlAs buffer layers have to be grown at T/sub G/=530 degrees C and the InP substrate has to be cleaned at T/sub t/=530 degrees C in order to obtain low defect density, smooth interfaces, and high resistivity with minimum carrier trapping or compensation centers. This optimization of the InAlAs buffer layer is of critical importance for the kink effect and, consequently, for the output conductance of the HEMTs (high electron mobility transistors) on InP. The optimized HEMT structures exhibited high transconductance, 530 mS/mm for 1- mu m gate length, low output conductance (19 mS/mm), and almost elimination of the kink effect on the I-V characteristics.<<ETX>>

  • High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam Epitaxy

    None

  • Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

    A new small-signal and noise-equivalent circuit for heterostructure field- effect transistors (HFET's), including the influence of impact-ionization and gate-leakage current on the electronic properties, is presented. The capability of the new model is demonstrated by bias-dependent investigations of the high-frequency (HF) (45 MHz up to 40 GHz) and noise behavior (2 GHz up to 18 GHz) of the InAlAs/InGaAs/InP HFET. Furthermore, based on these results, the bias-dependence of the newly implemented small-signal equivalent elements and the equivalent intrinsic noise sources, are discussed.

  • 160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor

    The development of the enhancement-mode high electron mobility transistor (E-HEMT) lattice matched to InP is of considerable interest in the area of low power, high speed communications. Circuits which employ both E-mode devices and depletion mode devices (D-mode) dissipate substantially less power in comparison to circuits designed with D-mode technology only. Also, since V/sub DS/ and V/sub GS/ of an E-mode device are always both positive, no level shifting between successive stages is needed and as a resuit, considerable chip area can be saved when an E/D circuit design is utilized. However, the development of E-mode InAlAs/InGaAs/InP HEMTs has been hampered by the difficulty in achieving sufficiently large barrier heights on InAlAs. Recently, platinum contacts to InAlAs have shown excellent promise for the Schottky metal with barrier heights of up to 1.09 eV. Preliminary work on E-HEMTs using Pt gates have achieved modest success for devices with large gate lengths. Threshold voltages of 50 mV and 0 V were achieved for devices with gate lengths of 1.0 /spl mu/m and 0.5 /spl mu/m , respectively. Heretofore, no deep submicron devices have been reported. In this work, we demonstrate that with proper heterostructure and device design, E-HEMTs with excellent DC and RF performance can be achieved with gate lengths as small as 0.15 /spl mu/m that are suitable for extremely high speed, low power circuit applications.

  • Highly reliable guardring-free InAlAs avalanche photodiodes

    The InAlAs avalanche photodiodes that employ a guardring-free structure demonstrate record high reliability of over 10000 hours at a high temperature of 200degC with no degradation in the surfaced pn-junction.

  • Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers

    Single-barrier varactors reported earlier were limited in their power output. By using a pseudomorphic In0.52Al0.48As/AlAs/In0.52Al0.48As barrier with good current blocking characteristics and stacking three varactor layers by MBE technique, we report the first symmetric stacked varactor on InP with low leakage, high breakdown voltage (≈ 14V) and 50 mW power output capability at 39 GHz, 20 mW at 186 GHz.

  • InP HEMTs with 39% PAE and 162-mW output power at V-band

    We report state-of-the-art V-band power performance of 0.15-μm gate length InGaAs-InAlAs-InP HEMTs. The 500-μm periphery InP HEMTs were measured in fixture at 60 GHz and demonstrated an output power of 162 mW (22.1 dBm) with 39% power-added efficiency (PAE) and 6.1-dB power gain at an input power of 16 dBm. These results represent the best combination of power and PAE reported to date at this frequency for any solid state device.

  • InAlAs/InGaAs resonant tunneling bipolar transistors (RBTs) operating at room temperature with high current gains

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