Impact ionization

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Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. (Wikipedia.org)






Conferences related to Impact ionization

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2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2019 20th International Symposium on Quality Electronic Design (ISQED)

20th International Symposium on Quality Electronic Design (ISQED 2019) is the premier interdisciplinary and multidisciplinary Electronic Design conference?bridges the gap among Electronic/Semiconductor ecosystem members providing electronic design tools, integrated circuit technologies, semiconductor technology,packaging, assembly & test to achieve design quality.


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


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Periodicals related to Impact ionization

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


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Xplore Articles related to Impact ionization

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Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode

IEEE Transactions on Electron Devices, 2002

It is well known that, as a result of the nonlocal nature of impact ionization, the noise of avalanche photodiodes decreases as the thickness of the multiplication region is reduced. In this paper, we present an alternative technique to calculate the gain distribution, including the dead-space effect, by numerical solution of the recursive equations. This method yields the average gain, ...


Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

IEEE Transactions on Electron Devices, 2002

For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup +/ and P/sup +/ PP/sup +/ structures and a realistic two-dimensional (2-D) SiGe NPN HBT. The new noise models, which are suitable for technology computer aided design (TCAD), are validated ...


Overview

SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors, None

This chapter introduces recent challenging studies of SOI-Lubistor-based devices and new pn-junction-based devices, and addresses their future prospect. Attention is given to operations of the_i_-MOS transistor, tunnel FET, feedback FET, offset-gate Lubistor, and SOI fin LED.


Feasibility of the Lubistor-Based Avalanche Phototransistor

SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors, None

In the twenty-first century, the traffic carried by optical communication systems will grow year by year, and the provision of rock-solid communication reliability is mandatory. Quantum communication technology is one of the most promising candidates for realizing truly reliable communication. Although the scientific and engineering bases for quantum communication remain under development, many scientists and engineers are carrying out challenging ...


New method for extracting collector series resistance of bipolar transistors

Electronics Letters, 1993

A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.<<ETX>>


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Educational Resources on Impact ionization

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IEEE-USA E-Books

  • Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode

    It is well known that, as a result of the nonlocal nature of impact ionization, the noise of avalanche photodiodes decreases as the thickness of the multiplication region is reduced. In this paper, we present an alternative technique to calculate the gain distribution, including the dead-space effect, by numerical solution of the recursive equations. This method yields the average gain, the multiplication noise, and gain distribution curves. The results are compared with simple Monte Carlo simulation and the Z-transform technique.

  • Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

    For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup +/ and P/sup +/ PP/sup +/ structures and a realistic two-dimensional (2-D) SiGe NPN HBT. The new noise models, which are suitable for technology computer aided design (TCAD), are validated by comparison with Monte Carlo (MC) device simulations for the 1-D structures including noise due to particle scattering and generation of secondary particles by impact ionization (II). It is shown that the accuracy of the usual approach based on the DD model in conjunction with the Einstein relation degrades under nonequilibrium conditions. 2-D MC noise simulations are found to be feasible only if the current correlation functions decay on a subpicosecond scale, what is not always the case.

  • Overview

    This chapter introduces recent challenging studies of SOI-Lubistor-based devices and new pn-junction-based devices, and addresses their future prospect. Attention is given to operations of the_i_-MOS transistor, tunnel FET, feedback FET, offset-gate Lubistor, and SOI fin LED.

  • Feasibility of the Lubistor-Based Avalanche Phototransistor

    In the twenty-first century, the traffic carried by optical communication systems will grow year by year, and the provision of rock-solid communication reliability is mandatory. Quantum communication technology is one of the most promising candidates for realizing truly reliable communication. Although the scientific and engineering bases for quantum communication remain under development, many scientists and engineers are carrying out challenging research to try to achieve significant breakthroughs in the near future. I have tried to discuss how the new Lubistor will contribute to meeting the technological challenges.

  • New method for extracting collector series resistance of bipolar transistors

    A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.<<ETX>>

  • Electroluminescence from InGaAs/InAlAs HEMTs

    Electroluminescence has been observed from InGaAs/lnAlAs HEMTs under low bias conditions confirming the presence of holes caused by impact ionisation. The field required for the onset of electroluminescence and the kink effect are similar, suggesting that the kink effect is associated with impact ionisation.<<ETX>>

  • Theory of high field transport and impact ionization in III-Nitride semiconductors

    High field electron and hole transport in wurtzite phase GaN is studied using an ensemble Monte Carlo method. The model includes the details of the full band structure derived from nonlocal empirical pseu-dopotential calculations. The nonpolar carrier-phonon interaction is treated within the framework of the rigid pseudoion approximation using ab initio techniques to determine the phonon dispersion relation. The impact ionization transition rate is computed based on the calculated electronic structure and the corresponding wave-vector dependent dielectric function. The complex band structure of wurtzite GaN requires the inclusion of band-to-band tunnelling effects that are critical at high electric fields. The electric-field-induced interband transitions are investigated by the direct solution of the time-dependent multiband Schroedinger equation. The multiband description of the transport predicts a considerable increase of the impact ionization coefficients compared to the case in which tunnelling is not considered.

  • A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM: 1T-QW DRAM

    We propose a new kind of capacitorless DRAM: 1Transistor Quantum Well structure, which has a ldquostorage pocketrdquo for holes within the body. This memory gives the opportunity to engineer spatial hole distribution within the body of the device, which is not possible with the conventional 1T-DRAMs. Using this novel device, we demonstrate approximately two order-of-magnitude increase in the drain-current (<i>Id</i>) difference between the reads of two states of the memory.

  • Is there experimental evidence for a difference between surface and bulk impact ionization in silicon?

    In previous works a difference between surface (MOS devices) and bulk (bipolar devices) impact ionization (II) has been found. It is shown that this difference is the result of inadequate II models used to interpret the experimental data and not due to unknown or new physical effects in MOS devices. Utilizing a Full Band Monte Carlo program experimental results for bulk systems and MOS devices are reproduced without assuming a difference between surface and bulk II.

  • A Full-Band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes

    A growing number of system applications are increasingly demanding high speed, low noise, and high sensitivity UV detectors. GaN avalanche photodiodes (APDs) are prime candidates to become the device of choice in this area. This work presents a theoretical analysis of the performance of GaN APDs using Full Band Monte Carlo simulation. A study of the multiplication gain, noise and bandwidth is presented in this paper. The numerical results are in good agreement with experimental data available in literature.



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