Conferences related to III-V semiconductor materials

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2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


SoutheastCon 2020

SoutheastCon is the annual Region 3 conference that brings together engineering professionals, students, and volunteers for a weekend of technical presentations, meetings, student competitions, and volunteer education.

  • SoutheastCon 2021

    IEEE SoutheastCon is the annual IEEE Region 3 Student, Professional, and awards conference.

  • SoutheastCon 2019

    The annual IEEE SoutheastCon conferences promote all aspects of theories and applications of engineering disciplines. Sponsored by the IEEE Region-3 and IEEE Huntsville Section, this event will attract researchers, professionals, and students from the Southeastern region of the U.S. SoutheastCon 2019 will feature tutorial sessions, workshops, Technical Programs, and student Hardware, Software, Ethics, Paper, Web competitions.

  • SoutheastCon 2018

    SoutheastCon is a annual conference held in Region 3 and covers a Professional Track, Student Track and Regional Track.

  • SoutheastCon 2017

    Broad scope professional paper conference, region 3 annual meeting, region 3 annual student conference

  • SoutheastCon 2016

    Annual Region 3 Trifecta of Student competitions, Technical papers and volunteer training and administration.

  • SoutheastCon 2015

    Horizontal Technical Conference with all topics; students compete in multiple competions; Region 3 training meetings.

  • SOUTHEASTCON 2014

    Horizontal Technical Conference with all topics; students compete in multiple competions; Region 3 training meetings.

  • IEEE SOUTHEASTCON 2013

    Region 3 Meeting, Technical papers, student competitions.

  • SOUTHEASTCON 2012

    The annual IEEE SoutheastCon conferences promote all aspects of the theories and applications of the engineering disciplines. Sponsored by the IEEE Region 03, this event attracts researchers, professionals, and students from the Southeast region of the U.S and beyond. SoutheastCon 2012 will be held in Orlando, Florida.

  • SOUTHEASTCON 2011

    IEEE SoutheastCon2011 is the annual IEEE Region 3 technical, professional, and student conference, invites conference refereed and non-refereed technical paper presentations and tutorials that advance the work and careers of conference attendees in the areas of interest for the conference.

  • SOUTHEASTCON 2010

    SoutheastCon 2010 is the Region 3 event which includes a student conference, a technical conference, and the Region 3 business meeting.

  • SOUTHEASTCON 2009

    It is the annual IEEE Region 3 Technical, Professional, and Student Conference. As the premier conference for the IEEE Region 3, it brings together electrical, computer and other engineering and science professionals, faculty and students to share the latest information through technical sessions, tutorials and exhibits. The conference schedule includes: a technical program with seminars, tutorials, and workshops; exhibits; a student program with student competitions; and IEEE regional meetings.

  • SOUTHEASTCON 2008

    SoutheastCon is the Southeastern USA Region of the IEEE's premier conference. It contains three main sections: a technical program, student competitions and regional meetings. SouthEastCon features technical papers, tutorials and exhibits.

  • SOUTHEASTCON 2007

  • SOUTHEASTCON 2006

  • SOUTHEASTCON 2005

  • SOUTHEASTCON 2004

  • SOUTHEASTCON 2003

  • SOUTHEASTCON 2002

  • SOUTHEASTCON 2001

  • SOUTHEASTCON 2000

  • SOUTHEASTCON '99

  • SOUTHEASTCON '98

  • SOUTHEASTCON '97

  • SOUTHEASTCON '96


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Periodicals related to III-V semiconductor materials

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Computing in Science & Engineering

Physics, medicine, astronomy—these and other hard sciences share a common need for efficient algorithms, system software, and computer architecture to address large computational problems. And yet, useful advances in computational techniques that could benefit many researchers are rarely shared. To meet that need, Computing in Science & Engineering (CiSE) presents scientific and computational contributions in a clear and accessible format. ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for III-V semiconductor materials

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No authors for "III-V semiconductor materials"


Xplore Articles related to III-V semiconductor materials

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High speed devices

2009 Device Research Conference, 2009

None


Carrier Transport in High-mobility MOSFETs

Carrier Transport in Nanoscale MOS Transistors, None

The remarkable advancement of LSI circuit technology has been primarily based on the downsizing of metal-oxide-semiconductor field-effect transistor (MOSFET). This chapter examines practical advantages of the new channel materials using semi-classical MC and quantum mechanical Wigner MC simulations, where it considers scattering effects, quantum mechanical effects and new device structure. It discusses the quasi-ballistic transport in high- mobility MOSFETs-that is, ...


MOS devices

2009 Device Research Conference, 2009

None


Post-deadline papers [abstracts only]

2015 European Conference on Optical Communication (ECOC), 2015

Provides an abstract for each of the presentations and a brief professional biography of each presenter. The complete presentations were not made available for publication as part of the conference proceedings.


III-V and Related Compound Material Devices and Circuits: Technical and Marketing Situation

28th European Solid-State Device Research Conference, 1998

None


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Educational Resources on III-V semiconductor materials

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IEEE-USA E-Books

  • High speed devices

    None

  • Carrier Transport in High-mobility MOSFETs

    The remarkable advancement of LSI circuit technology has been primarily based on the downsizing of metal-oxide-semiconductor field-effect transistor (MOSFET). This chapter examines practical advantages of the new channel materials using semi-classical MC and quantum mechanical Wigner MC simulations, where it considers scattering effects, quantum mechanical effects and new device structure. It discusses the quasi-ballistic transport in high- mobility MOSFETs-that is, the channel materials are III-V semiconductors, Ge and strained-Si, using the quantum-corrected Monte Carlo (MC) simulation. The chapter investigates the influence of quantum transport effects in ultrashort- channel III-V MOSFETs, based on a comparison between Wigner Monte Carlo (WMC) simulations, in which both quantum transport and carrier scattering effects can be fully incorporated, and considers conventional Boltzmann MC (BMC) simulation, in which no quantum transport effects. To accurately predict the electrical characteristics of nanoscale devices at normal conditions, device simulation must reliably consider both quantum and scattering effects in carrier transport.

  • MOS devices

    None

  • Post-deadline papers [abstracts only]

    Provides an abstract for each of the presentations and a brief professional biography of each presenter. The complete presentations were not made available for publication as part of the conference proceedings.

  • III-V and Related Compound Material Devices and Circuits: Technical and Marketing Situation

    None

  • QDs and Nanowires: What About Surface Fermi Level Pinning?

    None

  • Schottky-barrier diodes for electron-beam-semiconductor applications

    Electron-beam-semiconductor (EBS) targets can be constructed from pn-junction or Schottky-barrier diodes. Most applications described so far have employed the first type of diode. This paper describes the performance and current-gain calculations for Schottky-barrier EBS targets. Experiments and theory show that the current gain of Schottky-barrier diodes is generally greater than that of pn-junctions. Approximate calculations also indicate that the absence of the p+ layer increases significantly the maximum operating frequency of these diodes. The measured current gain characteristics for silicon, gallium- arsenide and gallium-arsenide-phosphide (Ga As<inf>0.7</inf>P<inf>0.3</inf>) Schottky-barrier EBS targets are in excellent agreement with theory. Typical current-gains are in the range of 2000 at beam voltages of 12 kv. The performances of the Schottky diodes are compared with those of pn-Junctions for the three semiconductor materials. An important result of these experiments is the derivation of the energies per electron-hole pair for gallium-arsenide (4.6 ev) and gallium-arsenide-phosphide (4.8 ev). It is also shown that Schottky-barrier EBS targets are better suited for measurement of those energies than pn-junctions.

  • Correlation between photoluminescent and electroluminescent efficiency in gallium phosphide

    The most important device parameter of an electroluminescent diode is the external quantum efficiency. This in turn is influenced by the properties of the junction (injection efficiency), by the recombination processes in the bulk material (recombination efficiency), and by the optical properties of the semiconductor (optical efficiency). This paper shows how the three effects can be separated by measuring photoluminescent efficiencies in various dielectric media along with electroluminescent efficiencies and Hall parameters. The external electroluminescent quantum efficiency of the diode can be predicted from measurements on the annealed wafers on the basis of the above information.

  • Advances In High Performance Multijunction III-V Solar Cells

    This paper provides a discussion of current progress in III-V multijunction solar cells. A review of tandem cell principles is first presented, followed by a review of current research results reported by several active groups. Structures yielding efficiencies in the range of 25% to 35% are discussed. A brief discussion of the attainable efficiency in a three-junction approach is presented.

  • Ultra-High-Mobility Gallium Arsenide OMVPE-Prepared from Trimethylgallium and Arsine

    None



Standards related to III-V semiconductor materials

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Jobs related to III-V semiconductor materials

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