Conferences related to II-VI semiconductor materials

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2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE International Semiconductor Laser Conference (ISLC)

The ISLC is dedicated to the latest developments in semiconductor lasers, amplifiers and LEDs, including: Semiconductor Optical Amplifiers, Silicon compatible lasers, VCSELs, Photonic band-gap and microcavity lasers, Grating controlled lasers, Multi-segment and ring lasers, Quantum cascade and interband, Sub-wavelength scale nanolasers, Mid IR and THz sources, InP, GaAs and Sb materials, Quantum dot lasers, High power and high-brightness lasers, GaN and ZnSe based UV to visible LEDs, Communications lasers, Semiconductor integrated optoelectronics.

  • 2018 IEEE International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL)

CAOL*2019 will provide a forum for scientists in a wide area of laser physics, optoelectronics, optics and photonics. The conference will cover wide frontiers in laser physics, photonics, nanotechnology, material physics, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the problems in hand, together with detailed analysis of application problems. This year in the frame of CAOL we will organize two accompanying events, the Workshop on Data Science in Modern Optoelectronics and Laser Engineering and the Workshop “Measurement Uncertainty: Scientific, Standard, Applied and Methodical Aspects” (UM*2019). DSMOLE*2019 will be dedicated to problems arising from merging of modern optoelectronics and laser engineering with data science, artificial and computational intelligence. UM*2019 will cover cutting edge developments in metrology and adjacent fields.

  • 2016 IEEE 7th International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The technical program traditionally consists of invited lectures and regular contributed papers (oral and poster sessions). The previous conferences were successfully held in since 1999 in different cities of Ukraine and Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3- 2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2013 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    CAOL*2013 will provide a forum for scientists in a wide area of laser physics and optoelectronics. The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The previous conferences were successfully held in 2003, 2005, 2008 and 2010 in Crimea, and in 2006 in Guanajuato, Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3-2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2010 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with analysis of the application problems. The technical program consists of invited and regular contributed papers.

  • 2008 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The 4-nd International Conference on Advanced Optoelectronics and Lasers (CAOL'2008) will be held in Alushta, Crimea, Ukraine, from September 29 to October 4, 2008. CAOL'2008 will provide a forum for experts in a wide area of laser physics and optoelectronics. The previous conferences were successfully provided in 2003 and 2005 in Crimea, and in 2006 in Guanajuato, Mexico.

  • 2005 International Conference on Advanced Optoelectronics and Lasers (CAOL)

  • 2003 International Conference on Advanced Optoelectronics and Lasers (CAOL)


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Periodicals related to II-VI semiconductor materials

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Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electrical Insulation Magazine, IEEE

The magazine covers theory, analysis, design (computer-aided design), and practical implementation of circuits, and the application of circuit theoretic techniques to systems and to signal processing. Content is written for the spectrum of activities from basic scientific theory to industrial applications.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


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Most published Xplore authors for II-VI semiconductor materials

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Xplore Articles related to II-VI semiconductor materials

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Optical absorption, gain and lasing in ZnSe

Quantum Electronics and Laser Science Conference (QELS 2000). Technical Digest. Postconference Edition. TOPS Vol.40 (IEEE Cat. No.00CH37089), 2000

Summary form only given. Different mechanisms were discussed to be relevant for the physical nature of gain in II-VI semiconductors. Since lasing was found to appear in the vicinity of the the exciton and according to the large exciton binding in comparison to the III-V materials different excitonic scattering processes (ex-ex, ex-LO phonon, biexcitons) were discussed, depending on the material ...


MOVPE technology

Proceedings of LEOS '93, 1993

Layered semiconductor devices consisting of III-V or II-VI materials instead of Si are gaining more and more importance in the field of modern electronics. For example, telecommunication supported by optoelectronic devices is presently one of the most important and rapidly evolving field of advanced high-technology, device applications for III-V based compounds are for instance HEMTs, LEDs, lasers, OEICs, MMICs, HBTs, ...


AlN/ZnO/LiNbO<inf>3</inf>packageless structure as a low-profile sensor for on-body applications

2017 IEEE International Ultrasonics Symposium (IUS), 2017

Surface acoustic wave (SAW) devices are widely used as filters or resonators for mobile communications or radars applications. However, the velocity of the wave can be very sensitive to physical parameters of the environment (temperature, strain...), which allows the device to be used as a sensor. SAW devices are passive (batteryless) and wireless, but are often bulky due to the ...


Structural and optical properties of Al<inf>x</inf>Zn<inf>1−x</inf>O alloys by sol-gel technique

2010 3rd International Nanoelectronics Conference (INEC), 2010

We propose a widegap II-VI semiconductor alloy, AlxZn1-xO, a material system for the fabrication of ultraviolet optoelectronic devices. AlxZn1-xO (x=0~0.5) thin films were prepared on quartz glass substrates by sol-gel method. The microstructure analysis of films indicated that the wurtzite structure of ZnO disappeared as the Al doping exceeds 20at%. These films also showed high transmittance in the visible region ...


Resonate frequency research on material characteristics of FBAR temperature sensor

2017 IEEE 9th International Conference on Communication Software and Networks (ICCSN), 2017

The paper investigates the resonate frequency characteristics of film bulk acoustic resonator (FBAR) temperature sensor, including resonate frequency, effective electromechanical coupling coefficient (k<sub>eff</sub><sup>2</sup>) and the effect of temperature on resonate frequency. The theoretical calculation formula of resonant frequency related to thickness and temperature is derived and it is verified by means of finite element simulation. The performance of FBAR composed ...


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Educational Resources on II-VI semiconductor materials

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IEEE-USA E-Books

  • Optical absorption, gain and lasing in ZnSe

    Summary form only given. Different mechanisms were discussed to be relevant for the physical nature of gain in II-VI semiconductors. Since lasing was found to appear in the vicinity of the the exciton and according to the large exciton binding in comparison to the III-V materials different excitonic scattering processes (ex-ex, ex-LO phonon, biexcitons) were discussed, depending on the material composition, the geometry of the investigated heterostructures (bulk, quantum wells and superlattices) and on the temperature. Otherwise there are different experi ments for temperatures around and above 77K, were an electron-hole plasma recombination has been supported to be the dominant mechanism of gain and lasing as it is found for the III-V materials. In this paper we address this question from the theoretical point of view, whether excitonic absorption and gain can coexist in a dense electron-hole plasma at 77K. To give an answer a theoretical approach has to contain both (i) an appropriate description of the excitonic absorption including all relevant many-body effects and (ii) to guarantee the correct position of the chemical potential of carriers, fixing the transition from absorption to gain, and (iii) to include not only field driven but relaxed excitons too.

  • MOVPE technology

    Layered semiconductor devices consisting of III-V or II-VI materials instead of Si are gaining more and more importance in the field of modern electronics. For example, telecommunication supported by optoelectronic devices is presently one of the most important and rapidly evolving field of advanced high-technology, device applications for III-V based compounds are for instance HEMTs, LEDs, lasers, OEICs, MMICs, HBTs, satellite-bound solar cells with high efficiency etc.; device applications for II-VI materials lie in the field of visible light detectors, infrared detectors, tuneable lasers, LEDs, etc.<<ETX>>

  • AlN/ZnO/LiNbO<inf>3</inf>packageless structure as a low-profile sensor for on-body applications

    Surface acoustic wave (SAW) devices are widely used as filters or resonators for mobile communications or radars applications. However, the velocity of the wave can be very sensitive to physical parameters of the environment (temperature, strain...), which allows the device to be used as a sensor. SAW devices are passive (batteryless) and wireless, but are often bulky due to the package. To dramatically reduces their profile, it is possible to use a Wave- guiding Layer Acoustic Wave (WLAW) structure, which consists of a low velocity layer between two higher velocity layers. These structures have the potential to be ultra-thin and conformable and thus could be used for flexible on-body biomedical applications. This work investigates the AlN/ZnO/LiNbO3structure as a candidate for a WLAW temperature sensor.

  • Structural and optical properties of Al<inf>x</inf>Zn<inf>1−x</inf>O alloys by sol-gel technique

    We propose a widegap II-VI semiconductor alloy, AlxZn1-xO, a material system for the fabrication of ultraviolet optoelectronic devices. AlxZn1-xO (x=0~0.5) thin films were prepared on quartz glass substrates by sol-gel method. The microstructure analysis of films indicated that the wurtzite structure of ZnO disappeared as the Al doping exceeds 20at%. These films also showed high transmittance in the visible region and the absorption edge had obvious blue shift with the increasing of Al concentration. It was found that optimally ultraviolet Photoconductivity when the Al concentration is 30at% were obtained.

  • Resonate frequency research on material characteristics of FBAR temperature sensor

    The paper investigates the resonate frequency characteristics of film bulk acoustic resonator (FBAR) temperature sensor, including resonate frequency, effective electromechanical coupling coefficient (k<sub>eff</sub><sup>2</sup>) and the effect of temperature on resonate frequency. The theoretical calculation formula of resonant frequency related to thickness and temperature is derived and it is verified by means of finite element simulation. The performance of FBAR composed of AlN, ZnO, PZT piezoelectric film and MO, Al, Au electrode is discussed and compared, respectively. The temperature coefficient of frequency (TCF) of FBAR temperature sensor composed of AlN and ZnO is obtained, respectively. The TCF of FBAR composed of AlN piezoelectric film is -19.380ppm, and the TCF of FBAR composed of ZnO piezoelectric film is -62.756ppm.

  • Diamond/ZnO/LiNbO<inf>3</inf> structure for packageless acoustic wave sensors

    This paper studies the Diamond/ZnO/LiNbO3 structure, numerically and experimentally, as a candidate for a packageless sensor based on the surface acoustic wave technology. The structure is compared with an AlN/ZnO/LiNbO3 structure, in order to highlight better performances of diamond with respect to AlN. Early experimental results of nanocrystalline diamond growth on ZnO/Si are presented.

  • Modification of nano-wire diameter depending on stress

    An analytical analysis of stress profile in cylindrical nanowires vertically grown on silicon (Si) substrate has been performed. Depending on the lattice- mismatch a tensile stress as high as 1GPa for TiO<sub>2</sub> nanowires and a compressive stress of 900MPa for InP nanowires has been obtained. The angular component of stress remains small indicating the nanowires will not be twisted as a result of the substrate-induced stress. The radial component of stress attains a maximum at the nanowire/substrate interface and gradually decreases with increasing height along the nanowire-axis.

  • Development of piezoelectric nanostructures for cell stimulation

    This paper describes the first insights on the use of piezoelectric two- dimensional nanostructures or nanoflakes (NFs) to electrically stimulate living cells. In the past years, piezoelectric nanostructures have been widely used to fabricate power generators or energy harvesting devices. However, the number of biological applications of this kind of materials is more reduced. We have demonstrated that mechanical interaction produced between the cell and the nanostructures generates a local piezopotential that can induce changes in the intracellular calcium concentration. This observation makes possible the use of nanodevices based on piezoelectric materials for in-situ stimulation of electrically responsive cells like neurons or muscle cells.

  • Selection of materials for multilayered structures to be used in packageless sensors

    Acoustic wave characteristics are numerically investigated and compared in AlN/ZnO/diamond and Al2O3/GaN/sapphire with Pt electrodes. These structures have been previously reported as candidates for application in packageless sensors. They include a low-velocity guiding piezoelectric layer sandwiched between two high-velocity materials. The anisotropy of the combined materials, their symmetry and the ratio between bulk acoustic wave velocities in the sagittal plane are compared to find the selection criterion for optimal combination of materials enabling high coupling of the useful mode and suppression of parasitic modes. Acoustic fields have been visualized for the reported structures and for Si3N4/GaN/sapphire, an alternative structure suggested to be used in packageless sensors, to understand the correlation between the acoustic fields and the wave characteristics.

  • Förster resonance energy transfer between single CdSe nanocrystals and an InP film

    It is well-known that the spontaneous emission of an excited fluorophore (donor) can be strongly modified by energy transfer (ET), resulting in a decrease of its photoluminescence (PL). Different interaction mechanisms are involved in resonant ET. In particular, resonant ET based on long range dipole-dipole interactions is referred to as Förster Resonant Energy Transfer (FRET) [1]. Radiative Energy Transfer (RET) occurs through the absorption by an acceptor of the photon emitted by the donor. Dexter et al [2] have treated the case of free electron-hole pairs created in a bulk semi-conductor by ET. But the transfer of the exciton energy to the electron-hole pair can occur through both RET and Nonradiative Energy Transfer (NRET). NRET is efficient within a few nanometers whereas RET can occur within several tens of nanometers.



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