11,363 resources related to Electronic Packaging
- Topics related to Electronic Packaging
- IEEE Organizations related to Electronic Packaging
- Conferences related to Electronic Packaging
- Periodicals related to Electronic Packaging
- Most published Xplore authors for Electronic Packaging
To promote awareness, understanding, advancement and application of ocean engineering and marine technology. This includes all aspects of science, engineering, and technology that address research, development, and operations pertaining to all bodies of water. This includes the creation of new capabilities and technologies from concept design through prototypes, testing, and operational systems to sense, explore, understand, develop, use, and responsibly manage natural resources.
Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies
The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.
ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.
The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.
The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.
The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.
Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.
Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, 2011
The heat dissipation is very important for electronic packaging. We have improved the thermal conductivity of electronic packaging materials by modifying epoxy resin with tetraester diepoxide monomers (TEDE). TEDE was synthesized with p-hydroxybenzoic acid, allyl bromide and glycols, and characterized by 1H-NMR. TEDE modified epoxy resin (TMEP) was cured by 4, 4 '-diaminodiphenyl-methane (DDM). Thermogravimetric (TG) analysis show that the ...
2016 17th International Conference on Electronic Packaging Technology (ICEPT), 2016
Graphene-based films (GBF) were fabricated using a chemical conversion process including graphene oxide (GO) preparation by use of Hummer's method, graphene oxide reduction using L-ascorbic acid (LAA), and finally film formation by vacuum filtration. GBF is considered as a candidate material for thermal management, i.e. for removing heat from hotspots in power electronic packaging, due to its high thermal conductivity. ...
2006 7th International Conference on Electronic Packaging Technology, 2006
Electronic packaging polymers filled with various solid additives such as silica, flame retardant, etc. have excessively been required for the use in advanced IC packages in recent years. It's necessary to predict the mechanical properties of these electronic packaging materials. On the basis of structural and mechanical characterization of particle filled epoxy materials, a new three-phase (dispersion phase, interface phase, ...
2017 18th International Conference on Electronic Packaging Technology (ICEPT), 2017
With the electronic packaging techniques and electronic equipments toward a high integration and miniaturization development, high thermal conductivity and excellent thermo-mechanical properties of polymer-based composites have attracted significant attentions in the recent years. SiO2as a common inorganic filler has been widely used in electronics packaging materials, due to its low coefficient of thermal expansion, high storage modulus, high glass transition ...
2018 19th International Conference on Electronic Packaging Technology (ICEPT), 2018
With the rapid development of electronic manufacturing technology, the metallic materials used for electronic packaging products have strongly requirements of improved the performance and reliability. Space material science is an emerging field of space technology and material science. The space environment has the characteristics of containerless, microgravity and ultra high vacuum. The highly undercooled liquid metal can be rapidly solidified ...
APEC 2015: 3D Packaging
Care Innovations: Responsibility For Being Green
KeyTalks: 3D Packaging of Power Products
Why Join the IEEE Electronics Packaging Society
Heterogeneous Photonic Packaging - John Osenbach - IPC 2018
Patrizio Vinciarelli, Newell Award: APEC 2019
3D Power Packaging Made Real with Embedded Component and Substrate Technologies - P.M. Raj, APEC 2018
IEEE Highlight: Electronic Nose: Diagnosing Cancer Through Smell
Infineon Technologies: Power Efficiency from Generation to Consumption
Advanced Packaging and Energy as Integration to Reboot Computing: IEEE Rebooting Computing 2017
2011 IEEE Awards James H. Mulligan, Jr. Education Medal - Raj Mittra
Robotics History: Narratives and Networks Oral Histories:Alan Winfield
IEEE Future Directions: Green Information and Communications Technology: An Overview
On the Shoulders of Giants
Amalga: Alternative to MEMS Technology for Miniature RF Components
APEC 2011-Intergrid: A Future Electronic Energy Network?
Electronic Data Systems to Improve Clinical Outcomes in Zambia - Jeff Stringer - IEEE EMBS at NIH, 2019
Care Innovations: Toxics In Electronics (com legendas em portugues)
Mouser by the Numbers
The heat dissipation is very important for electronic packaging. We have improved the thermal conductivity of electronic packaging materials by modifying epoxy resin with tetraester diepoxide monomers (TEDE). TEDE was synthesized with p-hydroxybenzoic acid, allyl bromide and glycols, and characterized by 1H-NMR. TEDE modified epoxy resin (TMEP) was cured by 4, 4 '-diaminodiphenyl-methane (DDM). Thermogravimetric (TG) analysis show that the decomposition temperature of TEDE is above 280 °C, and the decomposition temperature of TMEP is above 300 °C in nitrogen atmosphere. Differential scanning calorimetry (DSC) and polarized optical microscope (POM) were employed to illustrate that TEDE is liquid crystalline polymer form room temperature to 220 °C. Dynamic mechanical analysis (DMA) illustrate that the glass transition temperature (Tg) of TMEP materials decrease with the content of TEDE increase. The thermal conductivity was measured by laser thermal conductivity testing equipment. The results show that the glass transition temperature (Tg) of 30%TEDE modified epoxy resin is above 130°C, and the thermal conductivity is 0.64w/(m·K).
Graphene-based films (GBF) were fabricated using a chemical conversion process including graphene oxide (GO) preparation by use of Hummer's method, graphene oxide reduction using L-ascorbic acid (LAA), and finally film formation by vacuum filtration. GBF is considered as a candidate material for thermal management, i.e. for removing heat from hotspots in power electronic packaging, due to its high thermal conductivity. In this work, the GBF heat spreading performance in 3D TSV packaging was analysed using finite element methods (FEM) implemented in the COMSOL software. Both size effects and the influence of the thermal conductivity of the GBF heat spreader on the thermal performance of the 3D TSV package were evaluated. Furthermore, the size effects of the thermal conductive adhesive (TCA) underfill between the chip and the printed circuit board (PCB) were analysed. The results obtained are critical for proper design of graphene-based lateral heat spreaders in high power electronic packaging.
Electronic packaging polymers filled with various solid additives such as silica, flame retardant, etc. have excessively been required for the use in advanced IC packages in recent years. It's necessary to predict the mechanical properties of these electronic packaging materials. On the basis of structural and mechanical characterization of particle filled epoxy materials, a new three-phase (dispersion phase, interface phase, and continuous phase) constitutive model and its simulation calculation are performed for the mechanical properties of the particle filled electronic packaging polymer in this study. In this paper, the interface chemical principle and three phase constitute model are combined, which improve the mechanical property's calculation and composition design method of electronic packaging polymer. With this model, the relationship between mechanical properties of the electronic packaging materials and modulus of matrix, solid particles content, particle size, gradation and thickness of the interface adhesive layer were constructed mathematically. This relationship and its derived patterns can be used in not only the prediction of the mechanical properties of electronic packaging materials but also the instruction of the composition design for particle filled electronic packaging materials
With the electronic packaging techniques and electronic equipments toward a high integration and miniaturization development, high thermal conductivity and excellent thermo-mechanical properties of polymer-based composites have attracted significant attentions in the recent years. SiO2as a common inorganic filler has been widely used in electronics packaging materials, due to its low coefficient of thermal expansion, high storage modulus, high glass transition temperature and stable chemical properties. Although the filling of SiO2can improve the thermo-mechanical properties of polymer-based composites, its lower thermal conductivity limits its application in the field of electronic packaging. Boron nitride (BN), so-called “white graphene”, which has excellent physical and chemical properties, such as excellent mechanical strength, low coefficient of thermal expansion, high resistance to oxidation, outstanding corrosion resistance and high thermal conductivity. Therefore, we hope to combine the excellent properties of SiO2and BN to prepare polymer- based composites with high thermal conductivity and excellent thermo- mechanical properties. In our work, the SiO2@BN hybrids with core-shell structure were successfully prepared by high temperature calcination in nitrogen, and then filled into the epoxy resin to obtain the SiO2@BN/epoxy composites. When the SiO2@BN content was 50 wt%, the thermal conductivity of composites is 2.73 Wm-1K-1, which is about 4.07 times of neat epoxy. The storage modulus (50 °C) and glass transition temperature of the 50 wt% SiO2@BN/epoxy composites are 6.09 GPa and 188.4 °C, which is 3.72 GPa higher than that of the neat epoxy and 54.9 °C higher than the glass transition temperature of the neat epoxy. In addition, the coefficient of thermal expansion of the 50 wt% SiO2@BN/epoxy composites is 31.5 ppm/°C, which is 36.9 ppm/°C lower than the coefficient of thermal expansion of the neat epoxy.
With the rapid development of electronic manufacturing technology, the metallic materials used for electronic packaging products have strongly requirements of improved the performance and reliability. Space material science is an emerging field of space technology and material science. The space environment has the characteristics of containerless, microgravity and ultra high vacuum. The highly undercooled liquid metal can be rapidly solidified under space environment, which provides an effective way to prepare metallic materials with significantly refined microstructure and excellent physicochemical properties. The solidification of metal materials in the space environment has shown a wide application prospect in the field of electronic equipment manufacturing. This article starts with the electrostatic levitation technology, summarizes the recent research results of space materials science, and provides new ideas for the development and preparation of new metal materials for electronic packaging.
Au-30at.%Sn eutectic alloy is useful in electronics for its superior mechanical and thermal conduction properties. Compared with traditional methods (Au-Sn solder preform and evaporation), the electroplating is an attractive method to obtain Au-Sn solder due to its cost-effective. In this work, Au-Sn films were co-electroplated via a pyrophosphate based bath. Electrochemical studies have been conducted to examine the effects of bath temperature on plating process. It was found that the rate for deposition of Au-Sn alloys was increased with bath temperature increased. Besides, the effects of bath temperature on the morphology and composition of electrodeposits were discussed.
With the development of microelectronics and semiconductor, the density of electronic packaging increases quickly, which result in the high demand to the material. Aluminum reinforced with silicon carbide particles composites is one of potential materials for electronic packaging with its excellent properties such as low density, high thermal conductivity, lower coefficient of thermal expansion etc. In order to obtain the final product, packaging component of Al/SiCp must to be bonded with different materials in practical application. It is significant practical to research the infiltration bonding of aluminum silicon carbide electronic packaging materials and metal component. Al/SiCp electronic packaging materials embedded metal components are fabricated by gas pressure infiltration. The microstructure of interface is observed by EDS and XRD, Bend strength is in order to test the joint strength. The result shows that during the fabrication process of Al/SiCp electronic packaging materials, the reliable joint between composites and solid metal (FeNi<sub>50</sub>, Ti) can be realized. In the research of the infiltration bonding of Al/SiCp/FeNi<sub>50</sub>, it is found that (Fe,Ni)<sub>2</sub>(Al,Si)<sub>5</sub> layer and (Fe,Ni)<sub>4</sub>(Al,Si)<sub>13</sub> layer all exist in the interface reactive layer of the joint. With the increment of the infiltration bonding temperature, thickness of the former approximately stay the same, and the relationship between the latter and temperature is near linear. As a result of the formation of intermetallic compound, bending strength of joint is low. Interface bending strength is up to 46% of that of Al/SiCp (467MPa), when the infiltration bonding temperature is 670degC. On the study of the infiltration bonding of Al/SiCp/Ti, it is found that there wasn't any interface reactive layer in the joint. Mechanical and metallurgic combinations were all found in the interface at lower temperatures. When the infiltration bonding temperature is 710degC, atoms in the Al/Ti interface occurs interdiffusion and the interface, which has a 10mum thick diffusion layer, was bonded well. About the mechanical properties, it is found that, the bend strength of Al/SiCp/Ti is much more than that of Al/SiCp/FeNi<sub>50</sub> and with the increase of infiltration bonding temperature, the bend strength increased first and then decreased.
The present study focuses on the cooling performance of an environmentally friendly refrigerant HFO-1234yf which serves as a promising working fluid in miniature scale vapor-compression refrigeration system for the thermal management of electronic packaging with high power density. Experimental work was conducted for its flow boiling heat transfer performance in a microchannel with triangular cross section. Flow convection facilitates the effect of boiling in enhancing the heat transfer, particularly in the region with higher the mass flux and lower heat flux. The onset of boiling effect imposed on heat transfer is also being pre-matured by its increasing counterpart from convective flow. The competition between flow convection and boiling takes place leading to either a reduction or a stall in heat transfer performance. A sustenance in high heat transfer coefficient was observed within a certain range of the vapor quality, whereas a speculated “dry out” effect was also found in presence.
An AlCrFeNi quaternary alloy was prepared by design method of high entropy alloy, and microstructure and mechanical properties of this alloy were studied by means of XRD, SEM, TEM and other testing method. The results show that AlCrFeNi alloy has a simple crystal structure (BCC)and phase composition, microstructure is eutectic alloy of NiAl/(α-Fe, Cr) with the nanoscale eutectic spaces. The room temperature compression yield strength, compression strength and compression rates of the AlCrFeNi alloy are 1180MPa, 2162MPa and 40% respectively. Compared with AlCrFeCoNiCu alloy and NiAl alloy, the AlCrFeNi alloy has excellent mechanical properties. The research results can provide a possibility for new shell materials of micro-electronic packaging.
Nano Cu@Ag core-shell powders for electronic packaging were prepared by Liquid phase reduction method. The core-shell powders were characterized by XRD, SEM and TEM. The key problems in the experiment were presented some resolvable solution, and the coating process was optimized. The results showed that the dispersant PVP was added to make the dispersion effect better or the selection of stirring speed could not be too small, which could avoid the agglomeration of coating powder. In view of the incompleteness of powder coating, first of all, the amount of Ag should not be too small, if the amount of Ag was small, the coating was incomplete, then the mixing rate could not be too large, which the integrity of the coated powder would be destroyed. To solve the plethoric product impurities, firstly, PVP concentration could not be too high, otherwise, it would be residual. Secondly, the amount of reactive Ag could not be excessive, and it was as far as possible to ensure that all Ag coated on the surface of Cu powder. The process optimization results showed that the range of PVP concentration was between 5 g/L and 10 g/L, Cu/Ag molar ratio n<sub>Cu</sub>:n<sub>Ag</sub>=7:1, and the stirring speed of the solution was controlled at about 3000 r/min. The Cu@Ag core shell powder prepared had good dispersion and encapsulation effect.
his standard revises and enhances the VHDL language reference manual (LRM) by including a standard C language interface specification; specifications from previously separate, but related, standards IEEE Std 1164 -1993,1 IEEE Std 1076.2 -1996, and IEEE Std 1076.3-1997; and general language enhancements in the areas of design and verification of electronic systems.
This document is part of the POSIX series of standards for applications and user interfaces to open systems. It defines the Ada language bindings as package specifications and accompanying textual descriptions of the applications program interface (API). This standard supports application portability at the source code level through the binding between ISO 8652:1995 (Ada) and ISO/IEC 9945-1:1990 (IEEE Std 1003.1-1990 ...
This standard develops standard test methods to characterize and control Low Temperature Co-Fired Ceramic (LTCC) materials systems. The test methods are independentant of the type of LTCC materials system. The test methods will be usable by all vendors of LTCC to characterize and measure LTCC materials systems in frequencies up to 110GHz.