Conferences related to Electrical Stress

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE Power & Energy Society General Meeting (PESGM)

The Annual IEEE PES General Meeting will bring together over 2900 attendees for technical sessions, administrative sessions, super sessions, poster sessions, student programs, awards ceremonies, committee meetings, tutorials and more



Periodicals related to Electrical Stress

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Circuits and Systems for Video Technology, IEEE Transactions on

Video A/D and D/A, display technology, image analysis and processing, video signal characterization and representation, video compression techniques and signal processing, multidimensional filters and transforms, analog video signal processing, neural networks for video applications, nonlinear video signal processing, video storage and retrieval, computer vision, packet video, high-speed real-time circuits, VLSI architecture and implementation for video technology, multiprocessor systems--hardware and software-- ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.



Most published Xplore authors for Electrical Stress

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Xplore Articles related to Electrical Stress

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Effects of Electrical Stress on the InGaP/GaAs Heterojunction Phototransistor

IEEE Transactions on Device and Materials Reliability, 2015

Although the effects of electrical stress on the performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) have been widely studied and reported, few or no reports on the InGaP/GaAs heterojunction phototransistors (HPTs) have been published. In this paper, we discuss the phototransistor characteristics before and after the electrical stress applied at room temperature and at high temperature, and assess the effectiveness ...


Analysis of electrical stress on power circuit breaker from capacitor banks switching

2013 10th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2013

This paper presents the simulation of capacitor bank switching to evaluate the electrical stress to power circuit breaker. The electrical stress consists of inrush current during closing as well as transient recovery voltage and rate of rise of recovery voltage during opening. The studied cases are base case with ideal voltage source, practical system representing the system by several elements ...


Modeling and numerical study of the electroacoustic behavior of lithium niobate under an initial electrical stress

2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy (ISAF/PFM), 2013

Recently, we developed a second order formalism of piezoelectric structures under an external stress. In this work, this formalism is used to numerically study the nonlinearities and evolutions of electroacoustic behavior of lithium niobate under initial electrical stress. By varying the initial prestress, as well as azimuthal and elevation angles, the cut planes in which an electrical prestress induces significant ...


Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

IEEE Electron Device Letters, 2010

A new methodology is developed to determine spatial location and properties of traps generated by electrical stressing of AlGaN/GaN high-electron mobility transistors, based on integrated optical and electrical analysis. Mild off- state stress increases irreversibly the number of traps located in the near- surface AlGaN region at the gate edge. A deep level with 0.45-eV activation energy in fresh devices ...


Effect of thermal and electrical stress on photometric, radiometric, and colorimetric characteristics of large area white organic light emitting diodes

2018 IEEE Industry Applications Society Annual Meeting (IAS), 2018

The aim of this paper is to identify the photometric, radiometric, and colorimetric signatures of degradations of large area white organic light emitting diodes (Philips GL55, 41cm2 active area), subjected to various stress conditions. Nine devices have been stressed at a constant current density of 11.25mA/cm2, 13mA/cm2 and 15mA/cm2 at 23°C (room temperature), 40°C and 60°C. We have also stocked ...



Educational Resources on Electrical Stress

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IEEE-USA E-Books

  • Effects of Electrical Stress on the InGaP/GaAs Heterojunction Phototransistor

    Although the effects of electrical stress on the performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) have been widely studied and reported, few or no reports on the InGaP/GaAs heterojunction phototransistors (HPTs) have been published. In this paper, we discuss the phototransistor characteristics before and after the electrical stress applied at room temperature and at high temperature, and assess the effectiveness of the emitter-ledge passivation, which was found to keep the InGaP/GaAs HBTs from degrading at higher temperature or due to electrical stress. A room- temperature electrical stress was applied to the HPTs by maintaining a current density of 37 A/cm<sup>2</sup> for 1 h at room temperature. The electrical stress was lower by two to three orders than the stress usually applied to the HBTs for the stress study and did not cause significant decreases in the room- temperature current gain and photoresponse, but it significantly degraded the characteristics of the InGaP/GaAs HPTs at 420 K. In order to accelerate the degradation, the high-temperature stress was applied to both HPTs with and without the emitter-ledge passivation at 420 K. Although the current density was the same and the stress time was reduced to 15 min, the high-temperature stress significantly decreased the current gain and collector photocurrent of the HPT without the emitter-ledge passivation over the entire measurement temperature range of 300-420 K. The emitter-ledge passivation suppresses the recombination via defects at the emitter perimeter and is found to be more effective than that in the HBTs.

  • Analysis of electrical stress on power circuit breaker from capacitor banks switching

    This paper presents the simulation of capacitor bank switching to evaluate the electrical stress to power circuit breaker. The electrical stress consists of inrush current during closing as well as transient recovery voltage and rate of rise of recovery voltage during opening. The studied cases are base case with ideal voltage source, practical system representing the system by several elements and three phase practical switching including the pole discrepancy among circuit breaker poles during closing and opening. The obtained result will be used to as a guideline for specification and procurement of power circuit breaker using in Thailand electrical network.

  • Modeling and numerical study of the electroacoustic behavior of lithium niobate under an initial electrical stress

    Recently, we developed a second order formalism of piezoelectric structures under an external stress. In this work, this formalism is used to numerically study the nonlinearities and evolutions of electroacoustic behavior of lithium niobate under initial electrical stress. By varying the initial prestress, as well as azimuthal and elevation angles, the cut planes in which an electrical prestress induces significant changes on quasi-longitudinal velocity and benefits on coupling coefficient are identified.

  • Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

    A new methodology is developed to determine spatial location and properties of traps generated by electrical stressing of AlGaN/GaN high-electron mobility transistors, based on integrated optical and electrical analysis. Mild off- state stress increases irreversibly the number of traps located in the near- surface AlGaN region at the gate edge. A deep level with 0.45-eV activation energy in fresh devices changes its nature to interacting defect after the off-state stress, accompanied by an activation energy change. These results are consistent with trap generation in the near-surface AlGaN region at the gate edge related to high electric field and gate leakage current, as stressing does not result in the generation of cracks in the AlGaN layer.

  • Effect of thermal and electrical stress on photometric, radiometric, and colorimetric characteristics of large area white organic light emitting diodes

    The aim of this paper is to identify the photometric, radiometric, and colorimetric signatures of degradations of large area white organic light emitting diodes (Philips GL55, 41cm2 active area), subjected to various stress conditions. Nine devices have been stressed at a constant current density of 11.25mA/cm2, 13mA/cm2 and 15mA/cm2 at 23°C (room temperature), 40°C and 60°C. We have also stocked three devices under purely thermal stress at the same temperatures. Thus, we can make comparison between electrical-thermal stress and purely thermal stress. Over aging time, an increase of both the correlated color temperature and the general rendering index was observed. The degradation rate of the blue emitter is more significant than the other emitters, which induced a color shift toward a green-yellow.

  • Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

    This letter reports on the low-frequency flicker-noise characteristics in fresh and electrically stressed pMOSFETs with thin strained-Si (~4 nm)/Si<sub>0.6</sub>Ge<sub>0.4</sub> (~4 nm) dual-quantum-well (DQW) channel architectures. Normalized power spectral density (NPSD) of I<sub>d</sub> fluctuations (S<sub>ID</sub>/I<sub>d</sub> <sup>2</sup>) in fresh DQW devices exhibits significant improvement (by &gt;10<sup>2</sup>times) due to buried channel operation at low V<sub>g</sub>. At high V<sub>g</sub>, the NPSD enhancement reduces as carriers populate in the parasitic surface channel. Upon electrical stress, noise behavior in DQW devices was found to evolve from being carrier number-fluctuation dominated to mobility- fluctuation dominated. This was accompanied by the observation of a "less-distinct" buried-channel operation, indicating a potential stability issue of the Si/SiGe structure.

  • A study on controlling electrical stress of underground cable by semi-conductive shielding

    This paper presents a study on controlling electrical stress of high-voltage underground cables by semi-conductive shielding. Except impurities and cavities of the insulation material, most high-voltage underground cable insulation failures are caused by unusual energy dissipation conditions on the interface of insulation and semi-conductive layers. This paper investigates the principles of using semi-conductive shielding to control electric flux distribution and to constrict voltage between the shielding and the surface of insulation layer. In addition, termination fault analysis and study cases for using electrical stress control devices are also presented to show how the semiconductive shielding can be used to mitigate the nonuniformly distributed high electrical stress and to improve the voltage withstand level of the insulation layer.

  • EEEPROM tunnel oxide lifetime reliability prediction based on fast electrical stress tests

    It is shown how floating gate memory cell behaviour during retention tests can be predicted relying on static electrical stress tests. Retention tests are usually performed at high or low temperature bake to provide warning of an impending failure of the capability of memory cells to store data. These tests are very useful to screen out defective cell populations but induce significant test time overhead. To overcome this limitation, a correlation between stress time and retention time is established to anticipate retention test results. Experimental results based on an EEPROM test chip are presented in order to show the correlation between retention tests and electrical stress tests.

  • Electrical stress analysis model of stator coil cross-section

    An electrical stress model for a specific geometry of a stator coil cross- section has been developed and used to analyze various conditions that can exist in actual stator coils. A finite element program forms the basis for the model used in the analysis. The developed model is used to determine voltage distribution and electrical stresses in the coil cross-section. Results are obtained in the form of parametric curves which show how the electrical stresses vary as a function of Roebel filler permittivity, Roebel filler thickness and axial position. Plots of internal coil voltage distribution are shown. Analysis of groundwall electrical stress as a function of the curvature of the ground electrode is presented. In addition, voltage distribution is given for internal shielding, gap separations and as a function of filler dielectric constant. An automated model has been developed to perform analyses on coil designs of a wide range of configurations.

  • A new approach to analyze the degradation and breakdown of thin SiO<sub>2</sub> films under static and dynamic electrical stress

    A test procedure, which provokes the oxide breakdown in two stages, is proposed to analyze the degradation and breakdown of thin SiO/sub 2/ films. This procedure can partially overcome the problems associated with dynamic tests and allows a direct comparison of static and dynamic stresses. The analysis of the data obtained using the proposed method has allowed us to conclude that the oxide breakdown is strongly affected by the degradation induced at the beginning of the test. This result provides a high sensibility to the method, helping it to study the oxide degradation under tests closer to operation conditions keeping reasonable testing times.



Standards related to Electrical Stress

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IEEE Guide for Making Corona (Partial Discharge) Measurements on Electronics Transformers

This guide covers the detection of corona (partial discharge) and the measurement of its magnitude in electronics transformers. Test conditions, test apparatus, and test requirements are included.


IEEE Guide for Selecting and Using Reliability Predictions Based on IEEE 1413

Processes and methodologies for conducting reliability predictions for electronic systems and equipment.


IEEE Standard Methodology for Reliability Predictions and Assessment for Electronic Systems Equipment

A standardized medium for developing reliability predictions of electronic systems and equipment.