Conferences related to Electrical Overstress

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2020 IEEE Power & Energy Society General Meeting (PESGM)

The Annual IEEE PES General Meeting will bring together over 2900 attendees for technical sessions, administrative sessions, super sessions, poster sessions, student programs, awards ceremonies, committee meetings, tutorials and more


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2019 IEEE International Conference on Industrial Technology (ICIT)

The scope of the conference will cover, but will not be limited to, the following topics: Robotics; Mechatronics; Industrial Automation; Autonomous Systems; Sensing and artificial perception, Actuators and Micro-nanotechnology; Signal/Image Processing and Computational Intelligence; Control Systems; Electronic System on Chip and Embedded Control; Electric Transportation; Power Electronics; Electric Machines and Drives; Renewable Energy and Smart Grid; Data and Software Engineering, Communication; Networking and Industrial Informatics.


2019 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges.



Periodicals related to Electrical Overstress

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...



Most published Xplore authors for Electrical Overstress

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Xplore Articles related to Electrical Overstress

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A new electrical overstress (EOS) test for magnetic recording heads

2006 Electrical Overstress/Electrostatic Discharge Symposium, 2006

Electrical overstress (EOS) damage to magnetic recording heads due to repetitive, sinusoidal, low voltage noise is studied for the first time. A test method is described and used to measure the failure voltage and current for various combinations of signal connections from 200 kHz to 1 GHz. A resonance at 320 MHz, where the current flow increases dramatically and causes ...


A low-power circuit architecture for transistor electrical overstress (EOS) protection

Fifth Asia Symposium on Quality Electronic Design (ASQED 2013), 2013

As the transistor dimension keeps shrinking following trend predicted by Moore's Law, the voltage that transistor can sustain reliably is also reducing. For certain serial interface protocols (like the ubiquitous Universal Serial Bus (USB)) and some legacy input/output interfaces, high voltages like 1.8V, 3.3V and even 5.0V are still being used for protocol compliance. It is costly in silicon fabrication ...


Electrostatic Discharge and electrical overstress on GaN/InGaN Light Emitting Diodes

2001 Electrical Overstress/Electrostatic Discharge Symposium, 2001

Results of ESD testing (HBM and TLP) carried out on commercially available GaN LEDs grown on sapphire or silicon carbide will be presented. A non optimal design of layout leads to current crowding phenomena determining premature failure. Devices grown on SiC, adopting vertical current flow, and optimized layout and technology, achieved maximum ESD robustness in excess of 8 kV HBM, ...


Electrical Overstress Prevention & Test Best Practices

2008 17th Asian Test Symposium, 2008

This talk briefly covers some causes and effects of EOS. Specifically, those that are process induced and test program induced. Three types of process induced failure are briefly highlighted, namely gate oxide rupture, damaged metal and junction damage. The effect of ESD though prevalent, is not discussed. The focus of the presentation is the elimination of voltage spikes in testing ...


Human-Body-Model Electrostatic-Discharge and Electrical-Overstress Studies of Buried-Heterostructure Semiconductor Lasers

IEEE Transactions on Device and Materials Reliability, 2007

Optoelectronic components such as laser diodes, light-emitting diodes, and photodiodes are susceptible to electrostatic discharge (ESD) and electrical overstress (EOS). Human-body model (HBM) is the most widely adopted method for the characterization of the ESD performance. In this paper, we report a comprehensive study of the ESD and EOS characteristics of buried- heterostructure (BH) semiconductor lasers using the HBM. Threshold ...



Educational Resources on Electrical Overstress

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IEEE-USA E-Books

  • A new electrical overstress (EOS) test for magnetic recording heads

    Electrical overstress (EOS) damage to magnetic recording heads due to repetitive, sinusoidal, low voltage noise is studied for the first time. A test method is described and used to measure the failure voltage and current for various combinations of signal connections from 200 kHz to 1 GHz. A resonance at 320 MHz, where the current flow increases dramatically and causes severe sensor damage at only 550 mV, was observed. A lumped-element SPICE model is developed and used to extend the experimental measurements. It is concluded that it is important to measure and understand the effect of low voltage, high frequency noise transients on extremely ESD sensitive devices.

  • A low-power circuit architecture for transistor electrical overstress (EOS) protection

    As the transistor dimension keeps shrinking following trend predicted by Moore's Law, the voltage that transistor can sustain reliably is also reducing. For certain serial interface protocols (like the ubiquitous Universal Serial Bus (USB)) and some legacy input/output interfaces, high voltages like 1.8V, 3.3V and even 5.0V are still being used for protocol compliance. It is costly in silicon fabrication to provide transistors with different gate-oxide thickness to cater for various high voltage and speed requirements. In order to minimize the type of gate oxide thickness in advanced silicon process, circuit innovation is usually required to enable transistor to operate with voltage higher than its reliability limit, yet protected from electrical overstress (EOS). This paper discusses a new circuit architecture that is able to detect voltage source as well as to switch between external source and internal biasing voltage to ensure all transistors operating with high voltage are not exposed to the voltage limit. This circuit is low power in nature since it does not consume static current. By having this protection scheme, this would enable the use of transistor to support high-voltage application without incurring cost of having additional thicker gate-oxide transistor. In terms of application, this architecture can be used in integrated chip design involving various high-voltage supplies.

  • Electrostatic Discharge and electrical overstress on GaN/InGaN Light Emitting Diodes

    Results of ESD testing (HBM and TLP) carried out on commercially available GaN LEDs grown on sapphire or silicon carbide will be presented. A non optimal design of layout leads to current crowding phenomena determining premature failure. Devices grown on SiC, adopting vertical current flow, and optimized layout and technology, achieved maximum ESD robustness in excess of 8 kV HBM, 5 A TLP.

  • Electrical Overstress Prevention & Test Best Practices

    This talk briefly covers some causes and effects of EOS. Specifically, those that are process induced and test program induced. Three types of process induced failure are briefly highlighted, namely gate oxide rupture, damaged metal and junction damage. The effect of ESD though prevalent, is not discussed. The focus of the presentation is the elimination of voltage spikes in testing through proper programming and hardware design. As such, best practices commonly adopted by test engineers are included for sharing and discussion.

  • Human-Body-Model Electrostatic-Discharge and Electrical-Overstress Studies of Buried-Heterostructure Semiconductor Lasers

    Optoelectronic components such as laser diodes, light-emitting diodes, and photodiodes are susceptible to electrostatic discharge (ESD) and electrical overstress (EOS). Human-body model (HBM) is the most widely adopted method for the characterization of the ESD performance. In this paper, we report a comprehensive study of the ESD and EOS characteristics of buried- heterostructure (BH) semiconductor lasers using the HBM. Threshold current, optical power, optical spectrum, and reverse-bias current are characterized during the ESD study. We show that the ESD-failure thresholds depend upon the polarity. The chip can sustain the highest ESD stress under forward bias and the lowest one under forward/reverse bias. We also show that the BH lasers exhibit two types of ESD-degradation behavior. The soft degradation is characterized by a gradual increase in the threshold current, whereas the hard degradation is identified by a sudden jump in the threshold current during the ESD voltage ramp. The ESD-degradation behavior seems to be influenced by the cavity length. The failure-analysis results show that about 27% of the ESD failure is related to facet damage. The damage regions occur at the upper laser mesa structure and form preferentially on the bond-pad side. The preferential formation of the facet damage is suggestive of current-crowding effect. We have also found that the ESD-degradation behavior is a function of the facet damage. The soft-degradation failure shows a stronger correlation with the facet damage than the hard-degradation one. Finally, we demonstrate that the ESD performance of the laser can be improved by adding a protection diode.

  • B3. electrical overstress (EOS) failure causes and failure analysis

    During this highly interactive workshop you will learn about the causes of EOS and what is known about its failure analysis. A panel of industry experts will help lead the discussion and attendees will be encouraged to actively participate. A number of common root causes will be discussed, failure analysis differentiation from ESD as well as a less well known source — ESD from Charged Board Model (CBM) stresses. How do you recognize ESD versus ESD failures? Is it true that ESD from CBM is often misdiagnosed as EOS? Who is responsible for addressing EOS failures — Design or Manufacturing? What are the design protection choices for EOS protection — IC; Circuit Board and System? These are some of the questions that will be addressed during this workshop.

  • Electrical overstress / electrostatic discharge symposium proceedings

    None

  • A study of changes in oxide properties on metal-oxide-semiconductor (MOS) structure after electrical overstress

    In this research, the impact of electrical overstress on the oxide properties of MOS structure is studied. Prior to electrical overstress, normal C-V characteristic is observed and current conduction through the oxide layer is almost negligible. Once the device is subjected to electrical overstress, capacitance no longer depends on voltage, while leakage current increases drastically and is able to be detected by a photon emission microscope. Physical defects such as oxide damage and pinholes could be observed under a variable pressure field emission scanning electron microscope. These defects are highly likely induced during fabrication process and detrimental to the oxide strength.

  • Electrostatic Discharge (ESD) and Electrical Overstress (EOS) — The state of the art for methods of failure analysis, and testing in components and systems

    Electrostatic Discharge (ESD) and Electrical Overstress (EOS) continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This paper focuses on the state of the art of electrostatic discharge (ESD) and electrical overstress (EOS), with an emphasis on failure mechanisms and testing. The tutorial provides a clear picture of EOS phenomena, ESD and EOS failure mechanisms, testing and testing standards, and new failure analysis techniques.

  • New electrical overstress and energy loss mechanisms in GaN cascodes

    Depletion-mode Gallium Nitride Field-Effect Transistors (d-mode GaN FETs) need to be cascoded with a low-voltage enhancement-mode (e-mode) Si FET in order to satisfy the safety requirements of the power electronics industry. We find that the standard GaN cascoded structure is susceptible to electrical overstress and additional energy loss mechanisms. This paper provides an understanding of these mechanisms and their effects on both electrical overstress and energy loss. It also provides a method to measure the loss, and presents a benchmarking figure-of-merit. The insights will also be relevant for other wide-bandgap depletion-mode cascoded solutions e.g. SiC JFET, and are important for the successful design of cascoded solutions.



Standards related to Electrical Overstress

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No standards are currently tagged "Electrical Overstress"