Conferences related to Films

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2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)

DNA Nanotechnology Micro-to-nano-scale Bridging Nanobiology and Nanomedicine Nanoelectronics Nanomanufacturing and Nanofabrication Nano Robotics and Automation Nanomaterials Nano-optics, Nano-optoelectronics and Nanophotonics Nanofluidics Nanomagnetics Nano/Molecular Heat Transfer & Energy Conversion Nanoscale Communication and Networks Nano/Molecular Sensors, Actuators and Systems


2019 IEEE 28th Symposium on Fusion Engineering (SOFE)

fusion engineering, physics and materials, plasma heating, vacuum technology, tritium processing, fueling, first walls, blankets and divertors


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


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Periodicals related to Films

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Xplore Articles related to Films

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Application of HTSC-thin films in microwave integrated delay lines

1991 IEEE Aerospace Applications Conference Digest, 1991

The author describes the capabilities of high-temperature superconducting thin films (HTSTF) for possible application in microwave integrated delay lines. HTSTF can be characterized as thin-film microstrip (TFMS) lines operating at superconducting temperatures. Low insertion loss, minimum signal delay, and small power dissipation are possible with HTSTF delay lines. The conductor loss, dielectric loss, signal distortion, signal delay, and instantaneous bandwidth ...


Piezoelectric evaluation of UV-illuminated PZT films by piezorsponse force microscopy

2010 3rd International Nanoelectronics Conference (INEC), 2010

The Pb(Zr<sub>0.6</sub>,Ti<sub>0.4</sub>)O<sub>3</sub> (PZT) films were prepared using a sol-gel process on top of Pt (150nm)/TiO<sub>2</sub>(20nm)/SiO<sub>2</sub>/Si. Deposited solution layers were exposed to ultraviolet light illumination during the baking process. Then, we used the piezoresponse force microscopy (PFM) to perform the nanoscale observation of ferroelectric domain structure in PZT films.


Monolithic Thin Film Semiconductor Acoustoelectric Convolver

1981 Ultrasonics Symposium, 1981

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Kerr Rotation Enhancement with Amorphous Si Layer

IEEE Translation Journal on Magnetics in Japan, 1985

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On the optimization of silicon film thickness in thin-film SOI devices

IEEE SOS/SOI Technology Conference, 1989

Summary form only given. It is shown that in order to obtain fully depleted SOI MOSFETs with suitable values of threshold voltage (around 0.6 V for the n-channel device), a silicon film thickness smaller than 100 nm must be used. 70 nm should be sufficiently thin. This observation is quite independent of the magnitude of (fixed) oxide charge densities, although ...


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Educational Resources on Films

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IEEE-USA E-Books

  • Application of HTSC-thin films in microwave integrated delay lines

    The author describes the capabilities of high-temperature superconducting thin films (HTSTF) for possible application in microwave integrated delay lines. HTSTF can be characterized as thin-film microstrip (TFMS) lines operating at superconducting temperatures. Low insertion loss, minimum signal delay, and small power dissipation are possible with HTSTF delay lines. The conductor loss, dielectric loss, signal distortion, signal delay, and instantaneous bandwidth are dependent on the film thickness, superconducting film material, and substrate properties. Thin films on yttrium barium copper oxide (YBCO), bismuth strontium calcium copper oxide (BSCCO), and thalium calcium barium copper oxide (TCBCO) appear to be the most suitable for microwave integrated delay lines.<<ETX>>

  • Piezoelectric evaluation of UV-illuminated PZT films by piezorsponse force microscopy

    The Pb(Zr<sub>0.6</sub>,Ti<sub>0.4</sub>)O<sub>3</sub> (PZT) films were prepared using a sol-gel process on top of Pt (150nm)/TiO<sub>2</sub>(20nm)/SiO<sub>2</sub>/Si. Deposited solution layers were exposed to ultraviolet light illumination during the baking process. Then, we used the piezoresponse force microscopy (PFM) to perform the nanoscale observation of ferroelectric domain structure in PZT films.

  • Monolithic Thin Film Semiconductor Acoustoelectric Convolver

    None

  • Kerr Rotation Enhancement with Amorphous Si Layer

    None

  • On the optimization of silicon film thickness in thin-film SOI devices

    Summary form only given. It is shown that in order to obtain fully depleted SOI MOSFETs with suitable values of threshold voltage (around 0.6 V for the n-channel device), a silicon film thickness smaller than 100 nm must be used. 70 nm should be sufficiently thin. This observation is quite independent of the magnitude of (fixed) oxide charge densities, although the absolute value of the threshold voltage is greatly influenced by the density charges. The subthreshold slope of p-channel devices is much less sensitive to film thickness and always shows values lower than 75 mV/dec, provided the silicon film is thin enough to allow for full depletion of the device of the OFF state.<<ETX>>

  • Diluted ferromagnetic properties in Fe- and Co-doped TiO/sub 2-/spl delta// thin films

    Magnetic and electronic properties of Fe- and Co-doped TiO/sub 2-/spl delta// thin films are investigated by vibrating sample magnetometer (VSM), Mossbauer spectroscopy, and X-ray photoelectron spectroscopy (XPS). When the precursor films are annealed in vacuum, the resulting oxygen-deficient TiO/sub 2-/spl delta//:Fe and TiO/sub 2-/spl delta//:Co films are found to become semiconducting with p-type carriers in the 10/sup 18/ cm/sup -3/ range. The oxygen-deficient films go through conductivity transitions from n-type to p-type by Fe and Co doping. Results of VSM measurements show that ferromagnetism is exhibited at room temperature. XPS measurements on the thin films reveal that Fe ions have both Fe/sup 2+/ and Fe/sup 3+/ ionic valences while Co ions have Co/sup 2+/ mostly. Also, the density of Fe/sup 2+/ ions is found to decrease after annealing.

  • Crystal quality and conductivity type of epitaxial (002) ZnO films on (100) Si substrates for device applications

    Zinc oxide is a wide band-gap (3.37eV) semiconductor with high exciton binding energy (60meV) and excellent piezoelectric properties, showing promise for UV lasers, optical detection, sensors, and solar cells. Epitaxial growth of ZnO on Si is challenging due to lattice mismatch and thermal expansion coefficient differences, but it is important to develop such film growth in order to enhance the functionality of Si and provide optoelectronic and gas sensing capabilities in CMOS based ICs. Furthermore, ZnO grown by most techniques is nominally ntype and p-type films are hard to achieve; hampering the development of p-n junction devices.

  • Effects of defects on the electrical and optical properties of ZnO thin films

    Zinc oxide is a wide band gap semiconductor with potential applications in optoelectronic devices. The greatest challenge for these applications is to fabricate reliable and stable p-type ZnO thin films. There exist many reports of p-type conductivity in ZnO films doped with group V elements.Ü However, little understanding of the role of defects, either native or induced by doping, on the onset of p-type conductivity and on the degradation of optical properties. In this talk, we will demonstrate the effects of crystal defects on the optoelectronic properties of p-type ZnO epitaxial thin films. We will show that the interplay between dopants and extended defects such as dislocations and stacking faults is fundamentally important for the fabrication of p-type ZnO. ZnO thin films doped with nitrogen, phosphorus and antimony were grown by pulsed laser ablation. We will show that dislocations can, under certain conditions, aid the formation of shallow acceptors. ThÜe role of dislocations on the dopant solubility, electrical transport properties and photoluminescence will be addressed. We will also show that depending on the oxygen chemical potential, different defect levels can be introduced in the band-gap. These defects result in various optical transitions that can provide useful information on the donors and acceptors formed. Finally, issues of homoepitaxy and p-n junction fabrication will be presented.Ü From these studies, we conclude that the fabrication of p-type ZnO films is trivial, however, a p-type epitaxial thin film with high structural quality is challenging.Ü

  • Thin protective film for magnetic discs

    A thin film of hexamethyldisiloxane, C/sub 6/H/sub 18/Si/sub 2/O, is deposited on a magnetic disk to protect its thin-metal-film medium. The comparison of the overcoat is analyzed using electron-spectroscopy chemical analysis (ESCA) and Auger profiling. It is found that upon polymerization, carbon, silicon, and oxygen are uniformly distributed in the film except in the near-surface layer of 3-5-nm thickness, where the carbon content is increased. Despite the differences in protective film thickness the value of the dynamic friction coefficient is practically constant (0.13-0.15), whereas the measured values of the static friction coefficient mu /sub s/ vary from 0.16 to 0.75. The value of mu /sub s/ and the composition of the film surface layer are well correlated; the lowest value of mu /sub s/ corresponds to the highest carbon content in the surface layer.<<ETX>>

  • I-V characteristics of hybrid organic-on inorganic poly-N-epoxipropylearbazole/silicon hetero-junctions

    None



Standards related to Films

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