65 resources related to Extraordinary magnetoresistance
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2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting
The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science
INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.
All fields of satellite, airborne and ground remote sensing.
CLEO®/Europe will showcase the latest developments in a wide range of laser and photonics areas including laser source development, materials, ultrafast science, fibre optics, nonlinear optics, terahertz sources, high-field physics, optical telecommunications, nanophotonics, biophotonics.EQEC will feature the fundamentals of quantum optics, quantum information, atom optics, ultrafast optics, nonlinear phenomena and self-organization, plasmonics and metamaterials, fundamental nanooptics, theoretical and computational photonics.
The IEEE Photonics Conference, previously known as the IEEE LEOS Annual Meeting, offers technical presentations by the world’s leading scientists and engineers in the areas of lasers, optoelectronics, optical fiber networks, and associated lightwave technologies and applications. It also features compelling plenary talks on the industry’s most important issues, weekend events aimed at students and young photonics professionals, and a manufacturer’s exhibition.
Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.
All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.
Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
IEEE Spectrum, 2003
2006 IEEE International Magnetics Conference (INTERMAG), 2006
Summary form only given. Extraordinary magneto-resistance (EMR) read sensors are promising candidates for high density magnetic recording as they do not contain any magnetic material. Thus, they do not suffer from magnetic noise due to thermal fluctuations at small dimensions as observed in conventional giant magnetoresistive (GMR) or tunnel-valve sensors or spin-torque noise at high current densities as observed in ...
SENSORS, 2003 IEEE, 2003
Recently, it was shown that semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. This led to the perspective of using EMR devices in magnetic-field sensors and ultrafast read heads. Based on the finite element method, we study the EMR and optimize the effect with respect to material parameters and geometry. As the ...
IEEE Transactions on Magnetics, 1981
Extraordinary magnetoresistance effects /signals/ were investigated in dummy and bubble detectors together with their differences /noises/ in the two sensors as a function of rotating magnetic field. The noise and the signal-to- noise ratio changed with low values of the magnetic field and were practically independent of the field at higher than 2000 Oe. The effect is explained by a ...
1999 IEEE International Magnetics Conference (INTERMAG), 1999
2013 IEEE Medal of Honor
IEEE/RSE James Clerk Maxwell Medal - Thomas Haug and Philippe Dupuis - 2018 IEEE Honors Ceremony
Magnetic Nanowires: Revolutionizing Hard Drives, RAM, and Cancer Treatment
IEEE Magnetics Distinguished Lecture - Yoshichika Otani
Materials Challenges for Next-Generation, High-Density Magnetic Recording - Kazuhiro Hono: IEEE Magnetics Distinguished Lecture 2016
G. David Forney, Jr. accepts the IEEE Medal of Honor - Honors Ceremony 2016
Summary form only given. Extraordinary magneto-resistance (EMR) read sensors are promising candidates for high density magnetic recording as they do not contain any magnetic material. Thus, they do not suffer from magnetic noise due to thermal fluctuations at small dimensions as observed in conventional giant magnetoresistive (GMR) or tunnel-valve sensors or spin-torque noise at high current densities as observed in current perpendicular to the plane GMR sensors. We used the finite element method (FEM) to model the response of EMR sensors comprising an AlSb/InAs (12 nm)/AlSb electron quantum well structure with a sheet resistance of 300 Omega/sq and a room temperature mobility of mu = 1.6/Tesla. The EMR sensors with I+/V+/ I-/ V-lead geometry were processed by using conventional e-beam techniques. Gold was used for the leads and shunt with a contact resistance to the quantum well of about 3 times10<sup>-6</sup> Omegacm<sup>2</sup>. The spacing between the edges of the voltage and I-leads is 100 nm. The model shows that higher signals can be achieved when the lead geometry is (I+/V+/I-/V-) as compared to the geometry originally described by Solin, et al. (I+/V+/V-/I-). Moreover, our calculations show that in this geometry an EMR sensor, although its dimension may be larger than the magnetic bit to be sensed itself, still can act as a local sensor. We further show that the response is solely determined by the spacing and positioning of the voltage leads with respect to the bit. Our FEM calculations are in good agreement with experimental data. We measured a resistance change of DeltaR~390 mOmega/Oe when exciting the whole sensor. The FEM model fits the data assuming a mobility of mu = 1 / Tesla.
Recently, it was shown that semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. This led to the perspective of using EMR devices in magnetic-field sensors and ultrafast read heads. Based on the finite element method, we study the EMR and optimize the effect with respect to material parameters and geometry. As the important design rule we find that the width-to-length ratio of a rectangular device should be below 0.042. This holds for a broad regime of mobility /spl mu/ in the semiconductor and specific contact resistance /spl rho//sub c/ between the semiconductor and the metal.
Extraordinary magnetoresistance effects /signals/ were investigated in dummy and bubble detectors together with their differences /noises/ in the two sensors as a function of rotating magnetic field. The noise and the signal-to- noise ratio changed with low values of the magnetic field and were practically independent of the field at higher than 2000 Oe. The effect is explained by a difference in the shape anisotropy of the detectors.
The anisotropic magnetoresistivity, Delta rho , and resistivity, rho /sub 0/, were measured and related to the ordinary Hall coefficient, R/sub 0/, and the extraordinary Hall coefficient, R/sub s/, for Ni-Fe and (Ni/sub 89.5/Fe/sub 10.5/)/sub 100-x/ M/sub x/(x<or=10) alloy films (M=Al, Si, Co, Cu, Nb or Gd). From the experimental results, the value of Delta rho was found to be strongly related to R/sub s/. At R/sub s/=O, Delta rho reached its maximum value, 0.65 mu Omega -cm, and rho /sub 0/ reached a minimum of 16.91 mu Omega -cm. Contrary to rho /sub 0/, Delta rho did not depend on the film properties such as grain size or lattice imperfection. The R/sub 0/ was -1.6*10/sup -12/ V-cm/AOe at the maximum value of Delta rho . Therefore, it is concluded that large values of the anisotropic magnetoresistivity ratio, Delta rho / rho /sub 0/, would be obtained in ferromagnetic metals and alloys which satisfy the conditions R/sub s/=0 and R/sub 0/ approximately=-1.6*10/sup -12/ V-cm/AOe, simultaneously. It was also revealed that a magnetic moment value of 0.9 mu /sub B/ corresponded to large Delta rho / rho /sub 0/ and R/sub s/=0.<<ETX>>
To address the need for reducing the effect of 1/f noise on magnetic sensor performance we have invented a novel device, the MEMS flux concentrator, that shifts the operating frequency of magnetic sensors to higher frequencies. This is done by modulating the magnetic field before it reaches the sensor. The modulation is accomplished by putting the flux concentrators often used with magnetic sensors on MEMS structures. Flux concentrators enhance the magnetic field. In our present device, the magnetic sensor, a GMR sensor, is placed between flux concentrators that have been deposited on MEMS flaps. Depending on the design, the motion of the MEMS flaps modulates the field by a factor of 3 at frequencies from 8 to 15 kHz. Thus, the device shifts the operating frequency above the frequency region where 1/f noise dominates. This should increase the sensitivity of many magnetic sensors by two to three orders of magnitude. A perhaps equally important benefit is that because it is a modulation technique, it eliminates the problem of dealing with the large DC bias of most magnetoresistive sensors.
Extraordinary magnetoresistance (EMR) devices have been fabricated and characterized at various magnetic fields, operating temperatures, and current excitations. These devices are comprised of nonmagnetic high mobility semiconductors and low resistance metallic contacts and shunts. The resistance of the device is modulated by magnetic fields due to the Lorentz force steering an electron current between the high resistance semiconductor and the low resistance metallic shunt. The EMR devices were tested between 300 K and 5 K in magnetic fields up to 2 T perpendicular to the 2DEG plane and excitation currents up to 100 muA. Magnetoresistance increases as temperature decreases, potentially indicating that EMR persists even as dimensions approach the electron mean free path
This work uses the giant magnetoresistance (GMR) of spin valves with pico- scale IrMn layers to determine the exchange biasing effects. The samples were prepared by magnetron sputtering. This paper focuses on the results for the 5 K measurements of the GMR, exchange field and coercive field. The coercive field and exchange field are measured as a function of IrMn thickness and it was found that for IrMn layers /spl les/12 /spl Aring/, the coercive field is larger than the exchange field.
In this paper, we present the in-plane anisotropies, magnetostriction constants, magnetoresistance and extraordinary Hall effect data for Co/GaAs(100) films thinner than 5 nm. Four films with Co thicknesses of 0.7, 1.4, 2.1 and 3.5 nm were grown by MBE, at room temperature and capped with 2 nm of Cr. The crystal structure was determined using reflected high energy electron density (RHEED).
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