Conferences related to Excitons

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL)

CAOL*2019 will provide a forum for scientists in a wide area of laser physics, optoelectronics, optics and photonics. The conference will cover wide frontiers in laser physics, photonics, nanotechnology, material physics, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the problems in hand, together with detailed analysis of application problems. This year in the frame of CAOL we will organize two accompanying events, the Workshop on Data Science in Modern Optoelectronics and Laser Engineering and the Workshop “Measurement Uncertainty: Scientific, Standard, Applied and Methodical Aspects” (UM*2019). DSMOLE*2019 will be dedicated to problems arising from merging of modern optoelectronics and laser engineering with data science, artificial and computational intelligence. UM*2019 will cover cutting edge developments in metrology and adjacent fields.

  • 2016 IEEE 7th International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The technical program traditionally consists of invited lectures and regular contributed papers (oral and poster sessions). The previous conferences were successfully held in since 1999 in different cities of Ukraine and Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3- 2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2013 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    CAOL*2013 will provide a forum for scientists in a wide area of laser physics and optoelectronics. The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The previous conferences were successfully held in 2003, 2005, 2008 and 2010 in Crimea, and in 2006 in Guanajuato, Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3-2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2010 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with analysis of the application problems. The technical program consists of invited and regular contributed papers.

  • 2008 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The 4-nd International Conference on Advanced Optoelectronics and Lasers (CAOL'2008) will be held in Alushta, Crimea, Ukraine, from September 29 to October 4, 2008. CAOL'2008 will provide a forum for experts in a wide area of laser physics and optoelectronics. The previous conferences were successfully provided in 2003 and 2005 in Crimea, and in 2006 in Guanajuato, Mexico.

  • 2005 International Conference on Advanced Optoelectronics and Lasers (CAOL)

  • 2003 International Conference on Advanced Optoelectronics and Lasers (CAOL)


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


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Periodicals related to Excitons

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Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Industry Applications Magazine, IEEE

This magazine publishes articles concerning technical subjects and professional activities that are within the scope of IAS and are of interest to society members. The information includes but is not limited to articles, product reviews, book reviews, new standards, education information, announcements of conferences, workshops, new publications, committee meetings and reports of IAS activities.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.


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Most published Xplore authors for Excitons

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Xplore Articles related to Excitons

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Optical Stark effect of the exciton

Digest on Nonlinear Optics: Materials, Phenomena and Devices, 1990

None


Blue and Blue/Green Laser Diodes and LED-based Display Devices

50th Annual Device Research Conference, 1992

None


Non-Lorentzian homogeneous lineshape in semiconductor quantum dots

2002 Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 2002

Summary form only given. One basic information in light-matter interaction is the homogeneous line broadening of an optical transition, inversely proportional to its dephasing time. In this work we study the homogeneous broadening in InGaAs/GaAs and in CdSe/ZnSe quantum dots by measuring both decoherence times and lineshapes. We use time-resolved four-wave mixing on an inhomogeneously broadened dot ensemble, and single-dot ...


Size Dependence Of X/sup (3)/ For Frenkel Excitons In A Periodic Chain

Digest on Nonlinear Optics: Materials, Phenomena and Devices, 1990

None


Room-temperature 1.3/spl mu/m and 1.5/spl mu/m Electroluminescence from Si/Si/sub 1-x/Ge/sub x/ Quantum Wells

50th Annual Device Research Conference, 1992

None


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Educational Resources on Excitons

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IEEE.tv Videos

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IEEE-USA E-Books

  • Optical Stark effect of the exciton

    None

  • Blue and Blue/Green Laser Diodes and LED-based Display Devices

    None

  • Non-Lorentzian homogeneous lineshape in semiconductor quantum dots

    Summary form only given. One basic information in light-matter interaction is the homogeneous line broadening of an optical transition, inversely proportional to its dephasing time. In this work we study the homogeneous broadening in InGaAs/GaAs and in CdSe/ZnSe quantum dots by measuring both decoherence times and lineshapes. We use time-resolved four-wave mixing on an inhomogeneously broadened dot ensemble, and single-dot photoluminescence spectroscopy.

  • Size Dependence Of X/sup (3)/ For Frenkel Excitons In A Periodic Chain

    None

  • Room-temperature 1.3/spl mu/m and 1.5/spl mu/m Electroluminescence from Si/Si/sub 1-x/Ge/sub x/ Quantum Wells

    None

  • Nanotechnology 101 Part 2

    This tutorial is an introduction to the emerging opportunities in novel nanoscale devices and fabrication techniques, with particular emphasis on the implications for circuit and system designers. Topics covered include: fundamentals of device physics and materials science at the nanoscale; the ITRS Emerging Research Devices (memory & logic); nanotubes, nanowires, and nanoparticles; molecular devices; nanofabrication techniques and their impact on device layout. An assessment of the level of maturity for the proposed devices will be given. Part II covers molecular electronics, emerging research memory devices, resistivity switching, nano for Si technology, and layout restrictions.

  • Optical probing of a two-dimensional electron system in a microcavity: Quantum Hall Polaritons

    Summary form only given. Elementary excitations of a two-dimensional electron system (2DES) can be described in terms of exciton-polarons, i.e. excitons dressed by Fermi-sea electron-hole pairs due to interactions between excitons and the surrounding electrons [1,2]. An interesting open problem is the modification of this description in the quantum Hall regime, where electrons occupy flat-bands and electron-electron interactions become important. Here, we perform cavity spectroscopy, in the strong-coupling regime, of a two- dimensional electron system embedded in a semiconductor microcavity [3,4]. We observe exciton-polaron-polariton resonances in the regime of integer and fractional quantum Hall effect (FQHE).

  • Improvements of preequilibrium and evaporation models in Geant4

    Secondary neutron spectra in proton-nucleus reactions constitute a sound test for validation of prequilibrium and equilibrium models at incident energies below 100 MeV, where they play a major role. Previous versions of these models in deexcitation (Weisskopf) and preequilibrium (exciton) packages of Geant4 showed a big discrepancy with experimental data in the secondary neutron spectrum produced by bombarding27Al with protons of 22 MeV kinetic energy, although reasonable agreement was obtained in other reactions, provided some “ad-hoc” assumptions were made. Several actions have been taken in order to improve the situation. At the equilibrium stage, much more realistic inverse reaction cross sections have been included. At preequilibrium, the same set of reaction cross sections is used and the transition from preequilibrium to equilibrium regime is now physically consistent. In general, good agreement with experimental data of (p,n) reactions is achieved.

  • A diamond trap for indirect excitons in coupled quantum wells

    We report on trapping and control of indirect excitons in diamond-shaped electrostatic traps. An important advantage of the diamond trap is the realization of a parabolic-like trapping potential for excitons on a large scale by utilizing only a single electrode. We also report on trapping and control of excitons in elevated diamond traps implemented by adding a dasiawirepsila electrode around the diamond electrode. The elevated trap provides evaporative cooling to the excitons in the trap beyond the cooling via phonon emission. We present experimental proof of principle for trapping of indirect excitons in normal and elevated diamond trap configurations. For the elevated trap configuration, we observed an effective collection of excitons to the trap center with increasing exciton density.

  • Observation of intensity-dependent excitonic emission linewidth broadening in periodic asymmetric coupled three narrow quantum wells

    By taking the advantage of an extremely narrow excitonic emission linewidth in a sample of periodic asymmetric coupled three narrow quantum wells, we report our first observation of the broadening of the photoluminescence excitonic linewidth under the low excitation intensities: 0.54 W/cm/sup 2/-1.6 kW/cm/sup 2/ at low temperature. The sample was grown by MBE on a semi-insulating GaAs substrate. The expitaxial layers consist of 10 periods, each of which is composed of three narrow asymmetric coupled GaAs quantum wells with the designed thicknesses of45 /spl Aring/, 30 /spl Aring/, and 50 /spl Aring/ coupled by 40 /spl Aring/ Al/sub 0.3/Ga/sub 0.7/As barriers. We measured photoluminescence excitation spectra in the temperature range of4 K - 300 K.<<ETX>>



Standards related to Excitons

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