Etching

View this topic in
For other uses of etch or etching, see Etching (disambiguation), for the history of the method, see old master prints. (Wikipedia.org)






Conferences related to Etching

Back to Top

2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


More Conferences

Periodicals related to Etching

Back to Top

Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


More Periodicals

Most published Xplore authors for Etching

Back to Top

Xplore Articles related to Etching

Back to Top

Head and media requirements for high density recording

Proceedings. VLSI and Computer Peripherals. COMPEURO 89, 1989

The extension of magnetic recording to very high areal density requires that all the critical parameters of the system be reduced to extremely small values. The recording head parameters have to be scaled down, as well as the media magnetic parameters and the media thickness. Furthermore, pulse-slimming equalization techniques are effective in increasing the recording density by reducing intersymbol interface ...


Plararization with Spin-on-Glass/LPCVD Composite Films

1985 Symposium on VLSI Technology. Digest of Technical Papers, 1985

A physical and electrical evaluation of the feasibility of planarization by means of composite films has been carried out. The use of even a very thin spin-on film underneath a conventional LP1CVD PSG oxide Film significantly improves the final topography. The electrical properties of the undoped PSG film are consistent with use in CMOS VLSI technologies.


C<inf>2</inf>F<inf>6</inf>reactive ion-beam etching of LiNbO<inf>3</inf>and Nb<inf>2</inf>O<inf>5</inf>and their application to optical waveguides

Journal of Lightwave Technology, 1984

Properties of C2F6(freon 116) reactive ion-beam etching (RIBE) of LiNbO3, Ti- indiffused LiNbO3, and sputter-deposited Nb2O5film on LiNbO3are reported. A maximum differential etching ratio of approximately 5:1 has been measured for LiNbO3and the AZ 1350B Shipley photoresist. We have used this etching technique to fabricate diffraction gratings on both Ti-indiffused LiNbO3and Nb2O5- LiNbO3waveguides with measured throughput efficiencies in excess of ...


Novel dissoluble hardmask for damage-less Cu/low-k interconnect fabrication

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695), 2003

A Cu/low-k dual-damascene process using a novel dissoluble hardmask material, AlO, is developed to suppress ashing-damage to porous/nonporous low-k SiOC. In this process, ArF-resist patterns are firstly transferred to a very thin, typically 30-nm-thick, AlO hardmask layer. After removing the resist, SiOC is patterned using the hardmask. The hardmask remaining after the etching is spontaneously removed during post-etch wet-cleaning. The ...


The effect of track width and topography on composition uniformity of electroplated permalloy in thin film heads

1992 IEEE International Magnetics Conference (INTERMAG), 1992

None


More Xplore Articles

Educational Resources on Etching

Back to Top

IEEE-USA E-Books

  • Head and media requirements for high density recording

    The extension of magnetic recording to very high areal density requires that all the critical parameters of the system be reduced to extremely small values. The recording head parameters have to be scaled down, as well as the media magnetic parameters and the media thickness. Furthermore, pulse-slimming equalization techniques are effective in increasing the recording density by reducing intersymbol interface and eliminating negative sidelobes. The author discusses the limitations of conventional ferrite heads, and the advantages of thin-film inductive heads deposited by sputtering and/or electrodeposition onto a very hard ceramic wafer the structure of the head elements being defined by photolithography and dry and wet etch steps, and thin-film magnetoresistive read heads. The latter are particularly advantageous on inner tracks of small-diameter disk drives where linear velocity is relatively slow. Integrating a magnetoresistive read head with an inductive write head not only improves the readback sensitivity but also solves track interference problems during reading, since the width of the read element can be made narrower than the width of the write head. Critical requirements for longitudinal-recording media in general and thin-film disks in particular are also considered.<<ETX>>

  • Plararization with Spin-on-Glass/LPCVD Composite Films

    A physical and electrical evaluation of the feasibility of planarization by means of composite films has been carried out. The use of even a very thin spin-on film underneath a conventional LP1CVD PSG oxide Film significantly improves the final topography. The electrical properties of the undoped PSG film are consistent with use in CMOS VLSI technologies.

  • C<inf>2</inf>F<inf>6</inf>reactive ion-beam etching of LiNbO<inf>3</inf>and Nb<inf>2</inf>O<inf>5</inf>and their application to optical waveguides

    Properties of C2F6(freon 116) reactive ion-beam etching (RIBE) of LiNbO3, Ti- indiffused LiNbO3, and sputter-deposited Nb2O5film on LiNbO3are reported. A maximum differential etching ratio of approximately 5:1 has been measured for LiNbO3and the AZ 1350B Shipley photoresist. We have used this etching technique to fabricate diffraction gratings on both Ti-indiffused LiNbO3and Nb2O5- LiNbO3waveguides with measured throughput efficiencies in excess of 85 percent.

  • Novel dissoluble hardmask for damage-less Cu/low-k interconnect fabrication

    A Cu/low-k dual-damascene process using a novel dissoluble hardmask material, AlO, is developed to suppress ashing-damage to porous/nonporous low-k SiOC. In this process, ArF-resist patterns are firstly transferred to a very thin, typically 30-nm-thick, AlO hardmask layer. After removing the resist, SiOC is patterned using the hardmask. The hardmask remaining after the etching is spontaneously removed during post-etch wet-cleaning. The line-to-line capacitance of 280-nm-pitch, 4-level interconnects using this process is reduced by 10% from that using a conventional resist-mask process.

  • The effect of track width and topography on composition uniformity of electroplated permalloy in thin film heads

    None

  • Fabrication of polysilicon surface micromachined MEMS structures

    Polysilicon structures such as cantilevers with electrostatic actuators, mirrors, comb drives, and heaters were fabricated using a surface micromachined process. The fabrication process included 8 photo levels, two LPCVD nitride layers and four polysilicon layers. Details such as the incorporation of etch stops, deposition at higher than normal temperatures to reduce deposition times and anisotropic etch chemistry are important for the successful fabrication of these structures. Measurements were made throughout the fabrication process and pictures were taken at several points in the process. The completed wafers were tested and actuator structures were videotaped.

  • Selective microelectrodeposition of Ni-Fe patterns

    Ni-Fe patterns of reproducible high quality for integrated thin film heads can be made by selective microelectrodeposition. A Ni-Fe bath characterized by improved microthrowing and long bath operation time has been used for this technique. Precise replication of mask profile, uniformity of thickness and chemical composition, and favorable magnetic properties of the microstructures of varying size are significant features of the technique.

  • A backside via holes etching technology for indium phosphide MMICs

    A wet etching process for backside via holes suitable for use on InP MMICs technologies has been developed for an indium phosphide substrate. PMMA was used to mount the InP wafer onto a glass carrier. Sputtered Ta film was utilized as etch mask. HCl/H/sub 3/PO/sub 4/ solution realised a etch until a depth of 100 /spl mu/m. It has been demonstrated that the wet etching backside process is controllable with large latitudes.

  • Wet-etched ridge waveguides in y-cut lithium niobate

    By the technique of nickel indiffusion proton exchange (NIPE) and the technique of buffered proton exchange (PE) melt, wet-etched ridge waveguides in y-cut LiNbO/sub 3/ are fabricated for the first time. The fabricated ridge waveguides have smooth surfaces and are good enough for low-loss waveguides. Moreover, a ridge waveguide Mach-Zehnder modulator in y-cut LiNbO/sub 3/ is fabricated. The measured half-wave voltage is about 30% lower than that of a conventional modulator. The wet-etched ridge waveguides in y-cut and z-cut substrates are also characterized for comparison.

  • The influence of glow-discharge cleaning of Ge/Pd-GaAs on the specific contact resistivity

    None



Standards related to Etching

Back to Top

No standards are currently tagged "Etching"


Jobs related to Etching

Back to Top