Conferences related to Epitaxial layers

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


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Periodicals related to Epitaxial layers

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


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Most published Xplore authors for Epitaxial layers

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Xplore Articles related to Epitaxial layers

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Data and Scholarship

Big Data, Little Data, No Data: Scholarship in the Networked World, None

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Measurement of epitaxial layer resistivity using MOS capacitance method

Proceedings of the IEEE, 1967

Metal-oxide-semiconductor (MOS) capacitance-voltage measurements are used to determine the epitaxial layer resistivity. This method can be used to characterize epitaxial layers without removing the oxide present on the as- received wafers. The results are compared with that obtained by diode- capacitance technique and point contact method.


Application of radiation enhanced diffusion to microwave transistor fabrication

1971 International Electron Devices Meeting, 1971

The use of preferential Radiation Enhanced Diffusion (RED) of impurities from an n<sup>+</sup>silicon substrate doped with antimony to an n<sup>-</sup>silicon epitaxial layer by proton irradiation followed by the phosphorus atom implantation into an n<sup>-</sup>epitaxial layer, again followed by the proton irradiation, has been successfully applied to microwave transistor fabrication. This increases the power gain by reducing collector capacitance, C<inf>c</inf>, while ...


Fabrication process and device characteristics of sidewall base contact structure transistor using two-step oxidation of sidewall surface

IEEE Transactions on Electron Devices, 1988

A novel bipolar process technology for sidewall base contact structure (SICOS) transistors and the effects of sidewall base contact width on device characteristics are described. The sidewall window width can be precisely controlled by utilizing two-step oxidation of a sidewall surface (TOSS). Such a surface is made by using two-step etching of a silicon epitaxial layer and through the formation ...


A New Single Electron Transistor

50th Annual Device Research Conference, 1992

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Educational Resources on Epitaxial layers

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IEEE-USA E-Books

  • Data and Scholarship

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  • Measurement of epitaxial layer resistivity using MOS capacitance method

    Metal-oxide-semiconductor (MOS) capacitance-voltage measurements are used to determine the epitaxial layer resistivity. This method can be used to characterize epitaxial layers without removing the oxide present on the as- received wafers. The results are compared with that obtained by diode- capacitance technique and point contact method.

  • Application of radiation enhanced diffusion to microwave transistor fabrication

    The use of preferential Radiation Enhanced Diffusion (RED) of impurities from an n<sup>+</sup>silicon substrate doped with antimony to an n<sup>-</sup>silicon epitaxial layer by proton irradiation followed by the phosphorus atom implantation into an n<sup>-</sup>epitaxial layer, again followed by the proton irradiation, has been successfully applied to microwave transistor fabrication. This increases the power gain by reducing collector capacitance, C<inf>c</inf>, while maintaining high f<inf>T</inf>, which is difficult to realize by conventional means.

  • Fabrication process and device characteristics of sidewall base contact structure transistor using two-step oxidation of sidewall surface

    A novel bipolar process technology for sidewall base contact structure (SICOS) transistors and the effects of sidewall base contact width on device characteristics are described. The sidewall window width can be precisely controlled by utilizing two-step oxidation of a sidewall surface (TOSS). Such a surface is made by using two-step etching of a silicon epitaxial layer and through the formation of two sidewall SiO/sub 2/ and two sidewall Si/sub 3/N/sub 4/ layers. The key point in the TOSS processes is the optimization of the two sidewall Si/sub 3/N/sub 4/ thicknesses. This is necessary to prevent the extension of the bird's beak to the first sidewall SiO/sub 2/ so that the sidewall window can be selectively opened and to prevent the generation of defects. By applying the TOSS processes to a SICOS transistor, the sidewall window width can be controlled as desired. As a result, the dependences of breakdown voltage, junction capacitance, cutoff frequency, and switching speed on the sidewall window width are clarified.<<ETX>>

  • A New Single Electron Transistor

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  • An integrated buffer amplifier

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  • Parasitic effects in integrated circuits

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  • IEE Colloquium on 'GaAs on Si' (Digest No.47)

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  • Lift-off of silicon epitaxial layers for solar cell applications

    We have developed a technique which allows the fabrication of single crystalline layers of silicon of arbitrary size and shape and with a thickness ranging from less than 50 to greater than 100 /spl mu/m. The films are grown by liquid phase epitaxy (LPE) on single crystal silicon substrates which have been patterned with a suitable masking layer material such as SiO/sub 2/. Detachment of the layers proceeds by etching through the regions where the epitaxial layer is attached to the substrate. In contrast to the technique utilised for the epitaxial lift-off of III-V compounds, this approach does not require an extremely selective etchant which etches a buffer layer while not attacking the epitaxial layer. The substrate can be re-used many times.

  • Applications to Lightning Surge Protection Studies

    This chapter reviews representative applications of the finite-difference time domain method (FDTD) method to lightning electromagnetic pulse and surge simulations. The applications reviewed include lightning electromagnetic fields at close and far distances, lightning surges on overhead power transmission line (TL) conductors and towers, lightning surges on overhead distribution and telecommunication lines, the lightning electromagnetic environment in power substations, and lightning surges in wind-turbine- generator towers. It also includes lightning surges in photovoltaic arrays, the lightning electromagnetic environment in electric vehicles, the lightning electromagnetic environment in airborne vehicles, lightning surges and electromagnetic environment in buildings, and surges on grounding electrodes. When an overhead ground wire of a TL is struck by lightning, corona discharge will occur on this wire. Corona discharge around the ground wire reduces its characteristic impedance and increases the coupling between the ground wire and phase conductors.



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