Ellipsometry

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Ellipsometry is an optical technique for the investigation of the dielectric properties of thin films. (Wikipedia.org)






Conferences related to Ellipsometry

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2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


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Periodicals related to Ellipsometry

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer Graphics and Applications, IEEE

IEEE Computer Graphics and Applications (CG&A) bridges the theory and practice of computer graphics. From specific algorithms to full system implementations, CG&A offers a strong combination of peer-reviewed feature articles and refereed departments, including news and product announcements. Special Applications sidebars relate research stories to commercial development. Cover stories focus on creative applications of the technology by an artist or ...


Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


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Most published Xplore authors for Ellipsometry

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Xplore Articles related to Ellipsometry

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Evaluation of high dose ion implantation by spectroscopic ellipsometry

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1998

The thickness of amorphous layer formed by high dose ion implantation was measured by spectroscopic ellipsometry. The amorphous layer thickness, derived through a harmonic oscillator model using the spectroscopic ellipsometry data, is in good agreement with results by cross-sectional TEM and results for Monte-Carlo simulation of implant damage. Cross-wafer uniformity was also obtained for the thickness.


Non-destructive measurement of foot/notch on etched polysilicon gates using spectroscopic ellipsometry

ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005., 2005

Precise control of the full 2-dimensional profile of polysilicon gate structures is critical to ensure optimal device performance. As the minimum dimension of the gate continues to shrink in accordance with Moore's Law, small variations in the bottom 20% of the etch profile can have significant consequences on the electrical performance of the device. In order to control the polysilicon ...


Dielectric function evolution as Bruggeman method solution

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings, 1997

The ellipsometry is a proper technique for analyzing dielectric response of thin solid films, particularly for polycrystalline silicon. The behavior of dielectric function is usually analyzed by the Effective Medium Approximation (Bruggeman model), which gives three solution. The physical problem has only one solution. In this paper are discussed from a physical point of view the solutions of dielectric function.


Dynamical mapping and end-point detection of photoresist development by using plastic-fiber-bundle probe array

IEEE Transactions on Instrumentation and Measurement, 1999

A multiport plastic-optical-fiber-bundle-based (POFB-based) metrology for dynamic monitoring of the endpoint and variation on thickness or dissolving rate of photoresist film during development is demonstrated. Experimentally, the dissolution process of the AZ1350 photoresist film at several different sites on a 150-mm (6-in) silicon wafer was dynamically monitored. The dissolving rate can be simultaneously estimated from the time-resolved optical interference reflected ...


Impact of NI Layer Thickness and Anneal Time on Nickel Silicide Formation by Rapid Thermal Processing

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2006

The effects of different initial Ni layer thickness and various anneal times during the nickel silicidation process have been investigated as a function of rapid thermal annealing temperature between 200 and 800degC. By means of electrical and optical measurements the Ni silicide phase transformations are explained. Spectroscopic ellipsometry has been used to measure Ni and Ni silicide thickness. An oxide ...


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IEEE-USA E-Books

  • Evaluation of high dose ion implantation by spectroscopic ellipsometry

    The thickness of amorphous layer formed by high dose ion implantation was measured by spectroscopic ellipsometry. The amorphous layer thickness, derived through a harmonic oscillator model using the spectroscopic ellipsometry data, is in good agreement with results by cross-sectional TEM and results for Monte-Carlo simulation of implant damage. Cross-wafer uniformity was also obtained for the thickness.

  • Non-destructive measurement of foot/notch on etched polysilicon gates using spectroscopic ellipsometry

    Precise control of the full 2-dimensional profile of polysilicon gate structures is critical to ensure optimal device performance. As the minimum dimension of the gate continues to shrink in accordance with Moore's Law, small variations in the bottom 20% of the etch profile can have significant consequences on the electrical performance of the device. In order to control the polysilicon profile, one must first be able to measure it with a high degree of precision and accuracy. Most of the currently available metrology techniques face some sort of limitation for detection of footing/notching at the bottom of an etched polysilicon profile. In this paper we discuss the use of spectroscopic ellipsometry (SE) to provide non-destructive detection of profile variation (footing/notching) in the bottom 20% of the polysilicon profile

  • Dielectric function evolution as Bruggeman method solution

    The ellipsometry is a proper technique for analyzing dielectric response of thin solid films, particularly for polycrystalline silicon. The behavior of dielectric function is usually analyzed by the Effective Medium Approximation (Bruggeman model), which gives three solution. The physical problem has only one solution. In this paper are discussed from a physical point of view the solutions of dielectric function.

  • Dynamical mapping and end-point detection of photoresist development by using plastic-fiber-bundle probe array

    A multiport plastic-optical-fiber-bundle-based (POFB-based) metrology for dynamic monitoring of the endpoint and variation on thickness or dissolving rate of photoresist film during development is demonstrated. Experimentally, the dissolution process of the AZ1350 photoresist film at several different sites on a 150-mm (6-in) silicon wafer was dynamically monitored. The dissolving rate can be simultaneously estimated from the time-resolved optical interference reflected from the sample surface. The deviation on the thickness of PR film estimated by using the current apparatus is in good agreement with that observed by ellipsometry. The error in measurements is less than 1%, Furthermore, a two-dimensional contour mapping of the thickness of PR film on silicon wafer has been demonstrated by using 36 POFB probes.

  • Impact of NI Layer Thickness and Anneal Time on Nickel Silicide Formation by Rapid Thermal Processing

    The effects of different initial Ni layer thickness and various anneal times during the nickel silicidation process have been investigated as a function of rapid thermal annealing temperature between 200 and 800degC. By means of electrical and optical measurements the Ni silicide phase transformations are explained. Spectroscopic ellipsometry has been used to measure Ni and Ni silicide thickness. An oxide on the Ni layer was found to be generated, if the time between Ni deposition and annealing is not short enough. Also a method to monitor the Ni silicidation process on RTP systems was introduced

  • EUV laboratory polarimetry and ellipsometry with a laser produced plasma source

    This paper describes the first laboratory EUV ellipsometer developed with the multilayer polarization elements installed in the optical path of our EUV reflectometer, and also some examples of ellipsometry and polarimetry measurements.

  • Characterization of low dose SIMOX for low power electronics

    Summary form only given. In this work we focus on the characterization of the low dose SIMOX from the designed experiment. In this experiment the <100> oriented, p-type silicon wafers were implanted with the range of doses from 0.3E18 cm/sup 2/ to 0.6E18 cm/sup 2/ at the energy 190 keV, 200 keV and 210 keV and annealed for 6 hours at 1350/spl deg/C in 1%O/sub 2/ in N/sub 2/. Nondestructive characterization was performed using spectroscopic ellipsometry, optical reflectometry and TXRF. The structure of thin film layers was analyzed with high resolution SEM, dislocation density was determined by the enhanced Secco etch, and buried oxide integrity was examined by the measurements of I/V and C/V characteristics with the mercury probe analyzer.

  • Calibration of the MgF2 Biplate Compensator Using a Straight-Through Ellipsometer

    Zero order MgF<sub>2</sub> compensators are extensively used in deep ultra- violet(DUV) broadband optical instruments. This biplate compensator is made by two MgF<sub>2</sub> wave plates. For DUV broadband spectroscopic ellipsometers, the misalignment between the principal axes of the two MgF<sub>2</sub> wave plates must be carefully calibrated for the phase- retardance in order for this kind of compensator to be used in a high accuracy measurement. In this paper, we present a novel calibration method for such biplate compensator using a straight-through PC<sub>R</sub>A (polarizer- rotating compensator-analyzer) ellipsometer. The theoretical formulae of the biplate compensator and the calibration method are derived by means of Jones matrix calculus. The experimental result for characterizing a commercial zero- order MgF<sub>2</sub> biplate compensator is presented. This method can be applied to multi-wave plate compensators, for example, achromatic and super achromatic compensators.

  • Limit of sensitivity of laser ellipsometry for the detection of magnetically-induced birefringence

    The technique to detect small birefringence has been developed and systematic measurements on the magnetically-induced birefringence of the gaseous samples oxygen, nitrogen, and the noble gases, have been made. In the present paper we describe a noise reduction technique to attain the shot-noise limit. Our approach is based on a light extinction ratio which is good enough to reduce the noise due to fluctuations of the light source intensity and on an proper adjustment of the polarization state of incident light.

  • Ellipsometry and thin films parameters measurement

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