803 resources related to Electrostatic analysis
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The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.
The PCIC provides an international forum for the exchange of electrical applications technology related to the petroleum and chemical industry. The PCIC annual conference is rotated across North American locations of industry strength to attract national and international participation. User, manufacturer, consultant, and contractor participation is encouraged to strengthen the conference technical base. Success of the PCIC is built upon high quality papers, individual recognition, valued standards activities, mentoring, tutorials, networking and conference sites that appeal to all.
The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.
Meeting of academia and research professionals to discuss reliability challenges
This symposium pertains to the field of electromagnetic compatibility.
Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.
IEEE Antennas and Wireless Propagation Letters (AWP Letters) will be devoted to the rapid electronic publication of short manuscripts in the technical areas of Antennas and Wireless Propagation.
The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...
Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.
Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.
IEEE Transactions on Electromagnetic Compatibility, 1997
IEEE Transactions on Plasma Science, 2000
In this study, the velocity distribution functions of the ions and electrons in a collisional presheath and collisionless sheath of a plasma near a wall emitting and reflecting ions and electrons are systematically determined. The collisions in the presheath are modeled by a relaxation time approximation (namely, Bhatnagar-Gross-Krook model, or simply BGK model). To find the variation in electrostatic potential ...
2004 Abstracts 10th International Workshop on Computational Electronics, 2004
It is known that small dielectric objects can exhibit resonant behavior at certain frequencies for which the object permittivity is negative and the free-space wavelength is large in comparison with object dimensions (Fredkin and Mayergoyz, (2003). Currently these resonances in nanoparticles are found experimentally (or numerically) by probing dielectric objects of complex shapes with radiation of various frequencies, i.e. by ...
1995 Proceedings. 45th Electronic Components and Technology Conference, 1995
Recent advances in area array chip bonding combined with the availability of high density substrates facilitate novel approaches to partitioning future systems. We examine one such new paradigm here: tiled silicon, in which system integration is achieved by tiling a set of chips together using area bonding on high density substrates rather than by pursuing single chip integration. We simulate ...
2008 International Conference on Recent Advances in Microwave Theory and Applications, 2008
A two-dimensional (2-D) analytical solution of electrostatic potential is derived for lightly doped Double Gate (DG) MOSFET in the sub-threshold region by solving Poissonpsilas equation using the parabolic profile approach. The analytical model evaluates surface potential, threshold voltage, sub-threshold slope and sub-threshold drain current. Further, to improve the gate control and reduce the gate tunneling leakage currents, the device performance ...
IMS 2012 Microapps - Improve Microwave Circuit Design Flow Through Passive Model Yield and Sensitivity Analysis
IMS 2011 Microapps - Yield Analysis During EM Simulation
IMS 2011 Microapps - A Practical Approach to Verifying RFICs with Fast Mismatch Analysis
IMS MicroApps: Multi-Rate Harmonic Balance Analysis
Spectrum Analysis: RF Boot Camp
Surgical Robotics: Analysis and Control Architecture for Semiautonomous Robotic Surgery
IMS 2012 Microapps - Generation and Analysis Techniques for Cost-efficient SATCOM Measurements Richard Overdorf, Agilent
New Approach of Vehicle Electrification: Analysis of Performance and Implementation Issue
A Flexible Testbed for 5G Waveform Generation and Analysis: MicroApps 2015 - Keysight Technologies
Similarity and Fuzzy Logic in Cluster Analysis
IMS 2011 Microapps - STAN Tool: A New Method for Linear and Nonlinear Stability Analysis of Microwave Circuits
IMS 2011 Microapps - Remcom's XFdtd and Wireless InSite: Advanced Tools for Advanced Communication Systems Analysis
IMS 2011 Microapps - Tools for Creating FET and MMIC Thermal Profiles
Zohara Cohen AMA EMBS Individualized Health
Network Analysis: RF Boot Camp
Micro-Apps 2013: Power Added Efficiency (PAE) Analysis with 8990B Peak Power Analyzer
Brooklyn 5G Summit 2014: Dr. Robert Heath on Coverage and Capacity Analysis of Dense Millimeter Wave Cellular System
Developing Automated Analysis Tools for Space/Time Sidechannel Detection - IEEE SecDev 2016
Real-time Spectrogram Analysis of Continuous Optical Wavefields - José Azaña - Closing Ceremony, IPC 2018
In this study, the velocity distribution functions of the ions and electrons in a collisional presheath and collisionless sheath of a plasma near a wall emitting and reflecting ions and electrons are systematically determined. The collisions in the presheath are modeled by a relaxation time approximation (namely, Bhatnagar-Gross-Krook model, or simply BGK model). To find the variation in electrostatic potential with position, the model and analysis from Emmert et al. (1980), are used. Distribution functions of the ions and electrons in a collisionless presheath and sheath on a wall partially reflecting ions and electrons, therefore, can be exactly obtained. The reflections of the ions and electrons by a wall play important roles in studying heat transfer from a plasma sheath to a workpiece surface, and sputter etching and deposition, ion implantation, and ion scattering spectroscopy. Irrespective of ion and electron reflectivities, velocities of the ions in the presheath and sheath are of highly non-Maxwell-Boltzmann distributions. The electrons in the presheath are close to Maxwell-Boltzmann distributions, whereas those in the sheath are non-Maxwell-Boltzmann distributions. Even though the wall partially reflects ions and electrons, the Bohm's criterion is marginally satisfied at the sheath edge. The computed distribution functions for a completely absorbing surface agree with theoretical results provided in the literature. Good comparison of the resulted transport variables with available analytical work is presented in the companion paper.
It is known that small dielectric objects can exhibit resonant behavior at certain frequencies for which the object permittivity is negative and the free-space wavelength is large in comparison with object dimensions (Fredkin and Mayergoyz, (2003). Currently these resonances in nanoparticles are found experimentally (or numerically) by probing dielectric objects of complex shapes with radiation of various frequencies, i.e. by using a "trial-and- error" method. There has not existed any technique for direct calculation of the negative values of dielectric permittivities, and the corresponding frequencies of electromagnetic radiation at which these resonances occur. In the paper, we present a new technique for direct calculation of resonance frequencies and to study unique physical features of these resonances for 3D nanoparticles. It is demonstrated that the resonance values of permittivity, and hence the resonance frequencies, can be directly (i.e. without laborious probing) found by computing the eigenvalues of a specific boundary integral equation. Once the resonance permittivity is known, the resonance frequency can be obtained by invoking appropriate dispersion relations. This approach also reveals the unique physical property of plasmon resonances: resonance frequencies depend on dielectric object shapes, but they are scale invariant with respect to object dimensions, provided that they remain appreciably smaller than the free-space wavelength.
Recent advances in area array chip bonding combined with the availability of high density substrates facilitate novel approaches to partitioning future systems. We examine one such new paradigm here: tiled silicon, in which system integration is achieved by tiling a set of chips together using area bonding on high density substrates rather than by pursuing single chip integration. We simulate the partitioning of large Si/CMOS chips into tiled arrays of silicon chips, including in the analysis wiring lengths, electrical interconnect issues, I/O requirements, including drivers and electrostatic damage (ESD) protection, wiring capacity, floorplans, wiring demand, escape, manufacturing yield, cost, and other electrical and thermal issues. Partitions are assumed to be interconnected via random logic, bus or memory type net topologies. Our results clearly show that it is possible to effectively tile silicon chips, when they are connected by reduced Rent exponent random logic, busses, or memory type net topologies. Systems with high interconnect demand, and thus little or no functional integration, cannot be tiled because of problems with larger chip real estate for drivers for off-chip lines and driver chip I/O escape.
A two-dimensional (2-D) analytical solution of electrostatic potential is derived for lightly doped Double Gate (DG) MOSFET in the sub-threshold region by solving Poissonpsilas equation using the parabolic profile approach. The analytical model evaluates surface potential, threshold voltage, sub-threshold slope and sub-threshold drain current. Further, to improve the gate control and reduce the gate tunneling leakage currents, the device performance of DG MOSFET is investigated by introducing high k-gate dielectric architecture. A two-dimensional (2-D) analytical solution has also been developed for the DG- gate stack MOSFET design and a performance comparison of both the MOSFET designs have been evaluated. Results reveal enhanced device performance in terms of improved gate control, threshold voltage, sub-threshold slope and sub-threshold drain current.
This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poisson's equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (_L_g) to channel thickness (_T_ch) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (_T_BI) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.
Summary form only given. The authors have studied the kinetic energies of ions created by RF discharges in argon/helium mixtures by sampling ions through the grounded electrode of a GEC RF Reference Cell. Ion kinetic-energy distributions (IED) of Ar/sup +/, Ar/sub 2sup +/, Ar/sup ++/, ArH/sup +/, He/sup +/, and ArHe/sup +/, as measured by an electrostatic energy analyzer with a quadrupole mass spectrometer, have been determined. The plasma conditions were as follows: pressures of 13.3 Pa or 1.33 Pa, peak-to-peak applied voltages from 200 to 500 V, helium concentrations in argon of 0 to 95%, and flow rates of 10 sccm.
Most modern image converters with electrostatic focus are based on the electron of concentric spheres, which was analyzed by Schagen et al, in 1952. Tubes of this type yield sharp images of good brightness with a very simple point-symmetric diode structure. One disadvantage of this type of optics is its need for an input surface of spherically-convex shape. This feature complicates the adaptation of image tubes to optical systems and may also require the use of separate lenses for field flattening.
The waveguide of the general cross section is transformed into a waveguide of rectangular cross section by conformal transformation. The electric and magnetic field, the critical frequency, wall current, power transport and attenuation of the different TE-and TM-modes are calculated by a series approximation. Examples of numerical evaluation are given for five different cross sections.
A new analytical model has been developed for determining the pull-in voltage of an electrostatic actuated microelectromechanical system (MEMS) cantilever beam. The model takes into account the beam curvature caused by residual stress or stress gradient in the beam material. It can be used to model straight, curled and beam with mixture of straight and curled sections. Modeling result has been compared with published work of other researchers as well as with experimental measurement of this work and is found to be accurate.
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