Electron mobility

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In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field. (Wikipedia.org)






Conferences related to Electron mobility

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


ICC 2021 - IEEE International Conference on Communications

IEEE ICC is one of the two flagship IEEE conferences in the field of communications; Montreal is to host this conference in 2021. Each annual IEEE ICC conference typically attracts approximately 1,500-2,000 attendees, and will present over 1,000 research works over its duration. As well as being an opportunity to share pioneering research ideas and developments, the conference is also an excellent networking and publicity event, giving the opportunity for businesses and clients to link together, and presenting the scope for companies to publicize themselves and their products among the leaders of communications industries from all over the world.


2020 59th IEEE Conference on Decision and Control (CDC)

The CDC is the premier conference dedicated to the advancement of the theory and practice of systems and control. The CDC annually brings together an international community of researchers and practitioners in the field of automatic control to discuss new research results, perspectives on future developments, and innovative applications relevant to decision making, automatic control, and related areas.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


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Periodicals related to Electron mobility

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Electron mobility

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Xplore Articles related to Electron mobility

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An inexpensive drifter for surface currents

Proceedings of the 1982 IEEE Second Working Conference on Current Measurement, 1982

None


Amplification of ultrasonic waves

1962 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1962

None


A graphical study of the current distribution in short-channel IGFETS

1973 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1973

A report on the effects of channel length, L, drain diffusion junction depth, Z<inf>DJ</inf>, and the scatter-limited saturation velocity, VSATN = 10<sup>7</sup>cm/s on the current distribution in short N-channel enhancement mode IGFETs, studied numerically, will be offered.


MOS devices

2009 Device Research Conference, 2009

None


A saturation velocity magnetic sensor

1981 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1981

The saturation velocity operation of a silicon Hall device to achieve high magnetic sensitivity, independent of bias voltage and temperature, will be described.


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Educational Resources on Electron mobility

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IEEE-USA E-Books

  • An inexpensive drifter for surface currents

    None

  • Amplification of ultrasonic waves

    None

  • A graphical study of the current distribution in short-channel IGFETS

    A report on the effects of channel length, L, drain diffusion junction depth, Z<inf>DJ</inf>, and the scatter-limited saturation velocity, VSATN = 10<sup>7</sup>cm/s on the current distribution in short N-channel enhancement mode IGFETs, studied numerically, will be offered.

  • MOS devices

    None

  • A saturation velocity magnetic sensor

    The saturation velocity operation of a silicon Hall device to achieve high magnetic sensitivity, independent of bias voltage and temperature, will be described.

  • Atomistic simulations of si, ge and iii-v nanowire mosfets

    Si nanowire (SiNW) metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-all-around (GAA) architecture are expected to be a key device technology for future integrated circuits, because of excellent short-channel effect immunity, possible elimination of channel doping, which gives origin to characteristic fluctuation, feasibility of vertical integration, and so on. This chapter describes atomistic approaches to simulate carrier transport in Si, Ge and III-VNW MOSFETs with GAA structure, and discusses their performance potentials by performing intercomparison. It addresses this subject and investigates the electron mobility of SiNWs with three crystalline orientations-&lt; 100&gt;, &lt;110 &gt; and &lt;111 &gt;-by considering the atomistic electron-phonon interactions. The chapter shows that the electron mobility of SiNWs strongly depends on the crystalline orientation and diameter, and its origin is discussed in terms of electron and phonon band structure modulation caused by the quantum confinement. It evaluates performance potentials of InAsNW MOSFETs under the ballistic transport, and compare them with those of SiNW MOSFETs.

  • Monte Carlo simulation of electron transport in a carbon nanotube

    We use the Monte Carlo method to simulate electron transport in a zig-zag single-walled carbon nanotube with a wrapping index of n=10. Results show large low-field mobility, negative differential mobility, and large peaks in the drift velocity reaching 3/spl times/10/sup 7/ cm/s.

  • Modern high-voltage IGBTs and their turn-off performance

    The standard circuit for inverters for electrical drive and energy applications is the voltage source inverter. The preferred semiconductor from the kW up to the MW range is the IGBT. For high power inverters, high voltage IGBT modules are used. High voltage IGBTs have a limited turn-off capability. The use of large size or paralleled IGBTs leads to large inductive voltage drops in the commutation circuits. In this paper, a simple model for the turn- off of high voltage IGBTs with long carrier lifetime is derived from the device physics. The turn-off stress for the IGBT and the influence of the gate drive on it are analyzed and the characteristic behavior of IGBTs with field stop layers is explained

  • Transportation phenomena of Sn-doped InSb thin films and application to Hall element

    InSb is suitable material for magnetic sensor devices, because InSb has large electron mobility around room temperature. Moreover, Sn-doped InSb is more suitable, because temperature dependence of resistivity can be reduced. We try to understand the transportation phenomena in InSb films, and try to confirm the practical application of Hall elements devices using those films.

  • A virtual self-aligned process for n-channel InP IGFET's (or MISFET's)

    A virtual self-aligned process for fabricating IGFET's (or MISFET's) has been developed. Devices fabricated on semiinsulating InP substrates using this process show: (i) square-law characteristics, (ii) an inverse-relationship between transconductance and gate length, and (iii) high surface channel electron mobilities on the order of 1000 cm<sup>2</sup>/v.sec.



Standards related to Electron mobility

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IEEE Application Guide for Distributed Digital Control and Monitoring for Power Plants


IEEE Application Guide for Low-Voltage AC Power Circuit Breakers Applied with Separately-Mounted Current-Limiting Fuses

This guide applies to low-voltage ac power circuit breakers of the 635 V maximum voltage class with separately-mounted current-limiting fuses for use on ac circuits with available short-circuit currents of 200 000 A (rms symmetrical) or less. Low-voltage ac fused power circuit breakers and combinations of fuses and molded-case circuit breakers are not covered by this guide. This guide sets ...


IEEE Guide for Synthetic Fault Testing of AC High-Voltage Circuit Breakers Rated on a Symmetrical Current Basis


IEEE Recommended Practice for Maintenance of DC Overhead Contact Systems for Transit Systems

This recommended practice provides overhead contact system maintenance practices and procedures including maintenance techniques, site inspection and test procedures, and maintenance tolerances, for heavy rail, light rail, and trolley bus systems.


IEEE Recommended Practice for Measurement of 8-VSB Digital Television Transmission Mask Compliance for the USA

This recommended practice provides a standardized body of theory, techniques, and procedures for measuring the spectral characteristics of 8-VSB transmitters used for terrestrial transmission of digital television (DTV) in the frequency range near their assigned channels. Essential characteristics are specified and measurement procedures are given that ensure that all parties will obtain comparable results. The theory and techniques presented are ...


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Jobs related to Electron mobility

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