Conferences related to Electron microscopy

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2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2020 IEEE 16th International Workshop on Advanced Motion Control (AMC)

AMC2020 is the 16th in a series of biennial international workshops on Advanced Motion Control which aims to bring together researchers from both academia and industry and to promote omnipresent motion control technologies and applications.


2020 IEEE 17th International Symposium on Biomedical Imaging (ISBI 2020)

The IEEE International Symposium on Biomedical Imaging (ISBI) is the premier forum for the presentation of technological advances in theoretical and applied biomedical imaging. ISBI 2020 will be the 17th meeting in this series. The previous meetings have played a leading role in facilitating interaction between researchers in medical and biological imaging. The 2020 meeting will continue this tradition of fostering cross-fertilization among different imaging communities and contributing to an integrative approach to biomedical imaging across all scales of observation.

  • 2019 IEEE 16th International Symposium on Biomedical Imaging (ISBI)

    The IEEE International Symposium on Biomedical Imaging (ISBI) is the premier forum for the presentation of technological advances in theoretical and applied biomedical imaging.ISBI 2019 will be the 16th meeting in this series. The previous meetings have played a leading role in facilitating interaction between researchers in medical and biological imaging. The 2019 meeting will continue this tradition of fostering cross fertilization among different imaging communities and contributing to an integrative approach to biomedical imaging across all scales of observation.

  • 2018 IEEE 15th International Symposium on Biomedical Imaging (ISBI 2018)

    The IEEE International Symposium on Biomedical Imaging (ISBI) is the premier forum for the presentation of technological advances in theoretical and applied biomedical imaging. ISBI 2018 will be the 15th meeting in this series. The previous meetings have played a leading role in facilitating interaction between researchers in medical and biological imaging. The 2018 meeting will continue this tradition of fostering crossfertilization among different imaging communities and contributing to an integrative approach to biomedical imaging across all scales of observation.

  • 2017 IEEE 14th International Symposium on Biomedical Imaging (ISBI 2017)

    The IEEE International Symposium on Biomedical Imaging (ISBI) is the premier forum for the presentation of technological advances in theoretical and applied biomedical imaging. ISBI 2017 will be the 14th meeting in this series. The previous meetings have played a leading role in facilitating interaction between researchers in medical and biological imaging. The 2017 meeting will continue this tradition of fostering crossfertilization among different imaging communities and contributing to an integrative approach to biomedical imaging across all scales of observation.

  • 2016 IEEE 13th International Symposium on Biomedical Imaging (ISBI 2016)

    The IEEE International Symposium on Biomedical Imaging (ISBI) is the premier forumfor the presentation of technological advances in theoretical and applied biomedical imaging. ISBI 2016 willbe the thirteenth meeting in this series. The previous meetings have played a leading role in facilitatinginteraction between researchers in medical and biological imaging. The 2016 meeting will continue thistradition of fostering crossfertilization among different imaging communities and contributing to an integrativeapproach to biomedical imaging across all scales of observation.

  • 2015 IEEE 12th International Symposium on Biomedical Imaging (ISBI 2015)

    The IEEE International Symposium on Biomedical Imaging (ISBI) is the premier forum for the presentation of technological advances in theoretical and applied biomedical imaging. ISBI 2015 will be the 12th meeting in this series. The previous meetings have played a leading role in facilitating interaction between researchers in medical and biological imaging. The 2014 meeting will continue this tradition of fostering crossfertilization among different imaging communities and contributing to an integrative approach to biomedical imaging across all scales of observation.

  • 2014 IEEE 11th International Symposium on Biomedical Imaging (ISBI 2014)

    The IEEE International Symposium on Biomedical Imaging (ISBI) is the premier forum for the presentation of technological advances in theoretical and applied biomedical imaging. ISBI 2014 will be the eleventh meeting in this series. The previous meetings have played a leading role in facilitating interaction between researchers in medical and biological imaging. The 2014 meeting will continue this tradition of fostering crossfertilization among different imaging communities and contributing to an integrative approach to biomedical imaging across all scales of observation.

  • 2013 IEEE 10th International Symposium on Biomedical Imaging (ISBI 2013)

    To serve the biological, biomedical, bioengineering, bioimaging and other technical communities through a quality program of presentations and papers on the foundation, application, development, and use of biomedical imaging.

  • 2012 IEEE 9th International Symposium on Biomedical Imaging (ISBI 2012)

    To serve the biological, biomedical, bioengineering, bioimaging, and other technical communities through a quality program of presentations and papers on the foundation, application, development, and use of biomedical imaging.

  • 2011 IEEE 8th International Symposium on Biomedical Imaging (ISBI 2011)

    To serve the biological, biomedical, bioengineering, bioimaging, and other technical communities through a quality program of presentations and papers on the foundation, application, development, and use of biomedical imaging.

  • 2010 IEEE 7th International Symposium on Biomedical Imaging (ISBI 2010)

    To serve the biological, biomedical, bioengineering, bioimaging, and other technical communities through a quality program of presentations and papers on the foundation, application, development, and use of biomedical imaging.

  • 2009 IEEE 6th International Symposium on Biomedical Imaging (ISBI 2009)

    Algorithmic, mathematical and computational aspects of biomedical imaging, from nano- to macroscale. Topics of interest include image formation and reconstruction, computational and statistical image processing and analysis, dynamic imaging, visualization, image quality assessment, and physical, biological and statistical modeling. Molecular, cellular, anatomical and functional imaging modalities and applications.

  • 2008 IEEE 5th International Symposium on Biomedical Imaging (ISBI 2008)

    Algorithmic, mathematical and computational aspects of biomedical imaging, from nano- to macroscale. Topics of interest include image formation and reconstruction, computational and statistical image processing and analysis, dynamic imaging, visualization, image quality assessment, and physical, biological and statistical modeling. Molecular, cellular, anatomical and functional imaging modalities and applications.

  • 2007 IEEE 4th International Symposium on Biomedical Imaging: Macro to Nano (ISBI 2007)

  • 2006 IEEE 3rd International Symposium on Biomedical Imaging: Macro to Nano (ISBI 2006)

  • 2004 2nd IEEE International Symposium on Biomedical Imaging: Macro to Nano (ISBI 2004)

  • 2002 1st IEEE International Symposium on Biomedical Imaging: Macro to Nano (ISBI 2002)


2020 IEEE 21st International Conference on Vacuum Electronics (IVEC)

Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting technologies.System developers will find that IVEC provides a unique snapshot of the current state-of-the-art in vacuum electron devices. These devices continue to provide unmatched power and performance for advanced electromagnetic systems, particularly in the challenging frequency regimes of millimeter-wave and THz electronics.Plenary talks will provide insights into the history, the broad spectrum of fundamental physics, the scientific issues, and the technological applications driving the current directions in vacuum electronics research.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


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Periodicals related to Electron microscopy

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


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Most published Xplore authors for Electron microscopy

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Xplore Articles related to Electron microscopy

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Electron and atomic force microscopy studies of femtosecond laser machining of Si, GaAs and InP

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170), 2001

Summary form only given. The application of femtosecond light pulses to materials processing has recently become a topic of great interest. Femtosecond laser ablation dynamics has been extensively studied by techniques including time-of-flight and has also been treated theoretically. However, although numerous experimental studies have demonstrated excellent spatial control in femtosecond laser machining, relatively few investigations have explored details of ...


Growth Mechanism of Truncated Triangular GaAs Nanowires

2006 International Conference on Nanoscience and Nanotechnology, 2006

During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, the authors have determined the growth mechanism of truncated triangular GaAs nanowires


Electron microscopy analysis of amorphous and crystalline diamond coated silicon field emitters

IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012), 1995

The present paper concentrates on the morphology and microstructure of the coatings, as determined from electron microscopy investigations of coated Si emitters. The microscopy techniques used in this study include scanning electron microscopy to examine the macroscopic diamond morphology; high resolution TEM to study both detailed morphology and interface structure; selected area electron diffraction to determine if the film is ...


I-V characterization on diamond deposits by secondary electron microscopy

Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382), 1998

Diamond based cold cathodes have proven their feasibility for vacuum microelectronics devices. Although there have been numerous attempts to understand the emission mechanism (or mechanisms) these have not yet proved conclusive. In this research in-situ I-V characterization was conducted on a small region of interest on diamond coated surfaces inside a scanning electron microscope. Diamond powder, CVD-diamond, and amorphous diamond ...


Role of annealing time on junction depth for high dose phosphorus implants

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1998

Twenty-two wafers were implanted with 5/spl times/10/sup 15/ P cm/sup -2/ at 50 keV, one set of 11 with a beam current of 5.0 mA. The remaining 11 with a beam current of 0.5 mA. Wafers of each set were annealed at 800/spl deg/C for 1, 2, 4, 8, 16, 30, 60, 120, and 240 secs. All wafers were evaluated ...


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Educational Resources on Electron microscopy

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IEEE-USA E-Books

  • Electron and atomic force microscopy studies of femtosecond laser machining of Si, GaAs and InP

    Summary form only given. The application of femtosecond light pulses to materials processing has recently become a topic of great interest. Femtosecond laser ablation dynamics has been extensively studied by techniques including time-of-flight and has also been treated theoretically. However, although numerous experimental studies have demonstrated excellent spatial control in femtosecond laser machining, relatively few investigations have explored details of the near-surface changes in crystallographic structure and the localized changes in target composition. In this study we characterize laser-machined semiconductor samples, employing a combination of scanning (SEM) and transmission (TEM) electron microscopies as well as atomic force microscopy (AFM).

  • Growth Mechanism of Truncated Triangular GaAs Nanowires

    During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, the authors have determined the growth mechanism of truncated triangular GaAs nanowires

  • Electron microscopy analysis of amorphous and crystalline diamond coated silicon field emitters

    The present paper concentrates on the morphology and microstructure of the coatings, as determined from electron microscopy investigations of coated Si emitters. The microscopy techniques used in this study include scanning electron microscopy to examine the macroscopic diamond morphology; high resolution TEM to study both detailed morphology and interface structure; selected area electron diffraction to determine if the film is crystalline or amorphous and to identify the coating species; and electron energy loss spectroscopy to determine the nature of the carbon bonding-sp/sup 3/, sp/sup 2/, or amorphous-in the film.

  • I-V characterization on diamond deposits by secondary electron microscopy

    Diamond based cold cathodes have proven their feasibility for vacuum microelectronics devices. Although there have been numerous attempts to understand the emission mechanism (or mechanisms) these have not yet proved conclusive. In this research in-situ I-V characterization was conducted on a small region of interest on diamond coated surfaces inside a scanning electron microscope. Diamond powder, CVD-diamond, and amorphous diamond were deposited on to pointed field emitters and flat substrates. In addition, the effects of diamond geometry were compared before and after ion etching on the same sample.

  • Role of annealing time on junction depth for high dose phosphorus implants

    Twenty-two wafers were implanted with 5/spl times/10/sup 15/ P cm/sup -2/ at 50 keV, one set of 11 with a beam current of 5.0 mA. The remaining 11 with a beam current of 0.5 mA. Wafers of each set were annealed at 800/spl deg/C for 1, 2, 4, 8, 16, 30, 60, 120, and 240 secs. All wafers were evaluated by secondary ion mass spectrometry, transmission electron microscopy, sheet resistivity, thermal wave analysis and tapered groove profilometry. Transient enhanced diffusion was completed during the first 4 to 8 seconds. Loop dislocations were detected after 1 second of anneal, suggesting that transient enhanced diffusion was restricted by the absorption of the free interstitials by the growing loop dislocations.

  • HREM studies of ordered superstructure in PMN and PLMN ceramics

    Pure and La-doped lead magnesium niobate have been studied by high resolution electron microscopy combining with computer simulation. There are nanosize superstructural microdomains in the [110] HREM image of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/, and the domains grow to an extent of about 40 nm over 150 nm by 10-20% La-doping. Through the computer simulation and processing, the superstructure is confirmed as relating to the ordering on the B-sites, and an explicit description and explanation of the ordered structure and the microdomains form and growth are given.

  • Observation of stress-induced voiding with an ultra-high voltage electron microscope

    An investigation of stress-induced voiding at temperatures 400 to 500 degrees C in passivated Al metallizations (0.5 by 1 mu m wide) with a bamboo grain structure by ultra-high voltage (2 MV) electron microscopy is discussed. Emphasis is placed on the study of nucleation and growth of voids. Conventional and in situ observations of initial stages of voiding indicate that voids start not only at grain boundaries (GBs), but also at passivation/Al interfaces with no GBs. Void growth toward the Al metallization with direction, however, is always associated with GBs. From the observed results it is suggested that dislocation glide as well as GBs may play a role in voiding at the temperature range studied.<<ETX>>

  • Study by electron microscopy investigations (TEM, SEM, ED, HVEM) of treeing (from pre-breakdown to breakdown) induced by accelerated methods

    In this paper we have studied the evolution of treeing (from pre-breakdown to breakdown) induced by accelerated methods-like electron or laser beam irradiation-in polyethylene. The growth of treeing is very closely related to the structural changes of polyethylene observed by different electron microscopy investigations-like transmission electron microscopy, high voltage electron microscopy, scanning electron microscopy etc.-and thus we consider that it can be used as an ageing indicator. The increased role of polymers in the field of high technologies requires the structural study of dielectric. The polyethylene (linear thermoplastic polymer) is used like cable isolation in the nuclear power plants. The polyethylene has very good dielectric properties and good stability of its properties in usual conditions. Pre- breakdown, treeing discharge and breakdown phenomena in polyethylene are particularly sensitive to the conditions of samples such as specimen defects (especially at the surface), nature of beam, ambient medium, temperature, time and the mode in which the phenomenon occurs. The authors would also suggest that more attention should be given to the study of influence of the surface defects, impurities, specimen geometry, temperature and especially the transformations of the structure in the presence of breakdown phenomenon.

  • Simulations Of Fabricated Field Emitter Structures

    None

  • Young's modulus size effect of SCS nanobeam by tensile testing in electron microscopy

    In-situ tensile testing in EM (electron microscopy) is a useful tool for studying mechanical properties of nano-structures because it can provide quantitative information on sample deformation at atomic scale. In this work, MEMS tensile-testing chips with differently thick &lt;110&gt;-oriented SCS nanobeams were designed, fabricated and utilized in SEM and/or TEM to manipulate SCS nanobeam and measure its strain and stress in nano scale. We obtained Young's modulus of SCS nanobeams with thicknesses from 30 nm to 100 nm, and found that E decreased monotonously with the beams decreasing thickness. A simple modal was constructed to qualitatively illustrate this size dependence by taking surface effect into account and it shows that surface layers have different effects on E in tensile testing from that in resonant testing.



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