Conferences related to Electron Devices Society

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2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms


2013 International Semiconductor Conference (CAS 2013)

The aim of the conference is two-fold. First, it provides a forum of debate on selected topics of sientific research and technological development. On the other hand, this is an occasion for refreshing a broad perspective of the participants through invited papers and tutorials.The Conference is underlying the development in micro-and nanotechnologies, still maintaining the

  • 2012 International Semiconductor Conference (CAS 2012)

    The aim of the conference is to bring together scientists and engineers actively engaged in the field of solid state devices and technologies. CAS intends to provide a forum for presentation and discussion of the main achievements in micro- and nano-technologies, physics, design, technology (including semiconductor materials and microelectronics) and application of semiconductor devices and materials.

  • 2011 International Semiconductor Conference (CAS 2011)

    The aim of the conference is to bring together scientists and engineers actively engaged in the field of solid state devices and technologies. CAS intends to provide a forum for presentation and discussion of the main achievements in physics, design, technology and application of semiconductor devices and materials.

  • 2010 International Semiconductor Conference (CAS 2010)

    The Conference is underlying the development in micro-and nanotechnologies, still maintaining the traditional connection with semiconductor electronics

  • 2009 International Semiconductor Conference (CAS 2009)

    The aim of the conference is to bring together scientists and engineers actively engaged in the field of solid state devices and technologies in the domain microtechnologies (for microstructures - including microtrasducers - MEMS, MOEMS and BioMEMS) and nanotechnologies.

  • 2008 International Semiconductor Conference (CAS 2008)

    The aim of the conference is two-fold. First, it provides a forum of debate on selected topics of scientific research and technological development. On the other hand, this is an occasion for refreshing a broad perspective of the participants through invited papers and tutorials. The Conference is underlying the development in micro- and nanotechnologies, still maintaining the "traditional" connection with semiconductor electroncis.


2012 13th Biennial Baltic Electronics Conference (BEC2012)

"Smart space technologies and services" is very wide-ranging multidisciplinary research, development and application field of rapid growth and expansion. The conference BEC2012 will provide an opportunity to come together and discuss ones recent research work in defined topics of the field at an international forum in Tallinn, Estonia.


2012 IEEE International Interconnect Technology Conference - IITC

The IITC provides a forum for professionals and researchers in semiconductor processing, advanced materials, equipment development, and interconnect systems to present and discuss exciting new science and technology



Periodicals related to Electron Devices Society

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Communications Letters, IEEE

Covers topics in the scope of IEEE Transactions on Communications but in the form of very brief publication (maximum of 6column lengths, including all diagrams and tables.)


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Electron Devices Society

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Xplore Articles related to Electron Devices Society

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Integrated Optoelectronics

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels, 1992

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Proceedings of the 4th IEEE-Russia Conference. 2003 Microwave Electronics: Measurements, Identification, Applications. MEMIA 2003 (IEEE Cat. No.03EX800)

4th IEEE-Russia Conference Microwave Electronics: Measurements, Identification, Applications, 2003. MEMIA 2003. Proceedings of the, 2003

This following topics are dealt with: microwave electronic components and materials; active and passive functional devices; telecommunication systems, networks and devices; microwave techniques in industry, science and medicine.


Foreword

2007 IEEE Symposium on VLSI Circuits, 2007

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Cover

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2009

The following topics are dealt with: phase change memory; FRAM; non-volatile memory device; phase change material; electroforming; resistance-change memory device; barrier-engineered tunneling dielectric; floating gate flash memories; and NAND flash memories.


A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor

IEEE Journal of the Electron Devices Society, 2015

A new photodetector designed for Quanta image sensor application is proposed. The photodetector is a backside-illuminated, buried photodiode with a vertically integrated pump and transfer gate and a distal floating diffusion to reduce parasitic capacitance. The structure features compact layout and high conversion gain. The proposed device is modeled and simulated, and its performance characteristics estimated.


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Educational Resources on Electron Devices Society

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IEEE-USA E-Books

  • Integrated Optoelectronics

    None

  • Proceedings of the 4th IEEE-Russia Conference. 2003 Microwave Electronics: Measurements, Identification, Applications. MEMIA 2003 (IEEE Cat. No.03EX800)

    This following topics are dealt with: microwave electronic components and materials; active and passive functional devices; telecommunication systems, networks and devices; microwave techniques in industry, science and medicine.

  • Foreword

    None

  • Cover

    The following topics are dealt with: phase change memory; FRAM; non-volatile memory device; phase change material; electroforming; resistance-change memory device; barrier-engineered tunneling dielectric; floating gate flash memories; and NAND flash memories.

  • A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor

    A new photodetector designed for Quanta image sensor application is proposed. The photodetector is a backside-illuminated, buried photodiode with a vertically integrated pump and transfer gate and a distal floating diffusion to reduce parasitic capacitance. The structure features compact layout and high conversion gain. The proposed device is modeled and simulated, and its performance characteristics estimated.

  • Eastern Europe Library Project

    None

  • Characteristics of Gate-All-Around Junctionless Polysilicon Nanowire Transistors With Twin 20-nm Gates

    A high performance gate-all-around (GAA) junctionless (JL) polycrystalline silicon nanowire (poly-Si NW) transistor with channel width of 12 nm, channel thickness of 45 nm, and gate length of 20 nm has been successfully demonstrated, based on a simplified double sidewall spacer process. Without suffering serious short-channel effects, the GAA JL poly-Si NW device exhibits excellent electrical characteristics, including a subthreshold swing of 105 mV/dec, a drain-induced barrier lowering of 83 mV/V, and a high Ion/Ioffcurrent ratio of 7 × 108(VG = 4 V and VD= 1 V). Such GAA JL poly-Si NW devices exhibit potential for low-power electronics and future 3-D IC applications.

  • Sub-10-nm Asymmetric Junctionless Tunnel Field-Effect Transistors

    This study presents a new asymmetric junctionless tunnel field-effect transistor (AJ-TFET) to scale TFETs into sub-10-nm regimes. The asymmetric junctionless p+ source/body and junctional n/p+ drain/body separately optimize the lateral source and drain coupling to efficiently switch the TFETs, producing an abrupt on-off switching. Because of n-drain/p+body junction, the off-state tunnel barrier can be extended into the drain, ensuring an excellent short-channel effect without the limitation of channel lengths. Si/Ge heterojunctions and high-k gate insulators are combined with the AJ-TFETs for additional on-current boosting. Using compact structures and feasible parameters from practical Si-based CMOS technologies, the advancement in the on-off switching and short-channel effect make the AJ-TFET highly promising as an ideal approach into the sub-10-nm regimes.

  • ISSM 2008 sponsoring organizations

    JSAP was established as an official academic society in 1946, and since then, it has been a leading academic society in Japan. The society's interests cover a broad variety of scientific and technological fields, and JSAP continues to explore state-of-the-art and interdisciplinary topics. http://www.jsap.or.jp/

  • Proceedings of 8th International Seminar/Workshop on Direct and Inverse Problems of Electromagnetic and Acoustic Wave Theory. DIPED-2003 (IEEE Cat. No.03TH8689)

    The following topics are dealt with: complex media; diffraction; numerical methods; antennas; transmission lines; mobile antenna radiation; acoustics; and field measurements.



Standards related to Electron Devices Society

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IEEE Standard for Information Technology - POSIX Ada Language Interfaces - Part 1: Binding for System Application Program Interface (API)

This document is part of the POSIX series of standards for applications and user interfaces to open systems. It defines the Ada language bindings as package specifications and accompanying textual descriptions of the applications program interface (API). This standard supports application portability at the source code level through the binding between ISO 8652:1995 (Ada) and ISO/IEC 9945-1:1990 (IEEE Std 1003.1-1990 ...


IEEE Standard for Low-Voltage AC Power Circuit Protectors Used in Enclosures


Standard for 4.76 kV to 38 kV Rated Ground and Test Devices Used in Enclosures

This standard covers drawout type, indoor, medium-voltage ground and test (G&T) devices for use in drawout metal-clad switchgear rated 4.76 kV through 38 kV as described in IEEE Std C37.20.2. Four G&T device types are generally supplied for temporary circuit maintenance procedures for insertion in place of the circuit breaker as follows: a) Simple manual devices b) Complex manual devices ...



Jobs related to Electron Devices Society

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