Conferences related to Effective mass

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.



Periodicals related to Effective mass

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Reviews in

The IEEE Reviews in Biomedical Engineering will review the state-of-the-art and trends in the emerging field of biomedical engineering. This includes scholarly works, ranging from historic and modern development in biomedical engineering to the life sciences and medicine enabled by technologies covered by the various IEEE societies.


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.



Most published Xplore authors for Effective mass

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Xplore Articles related to Effective mass

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Simulations of the electronic properties of GaAs polytype superlattices

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2016

We study the electronic properties of GaAs superlattices consisting of zincblende and wurtzite segments using a ten-band k·p model. Our simulations indicate that the simultaneous treatment of both the Γ7and the Γ8conduction bands is essential to achieve an accurate description of electron wave functions and energies.


Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)

13th IEEE International Semiconductor Laser Conference, 1992

The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.


Analyzing the I-V characteristics of thin gate oxides using multiple regression

Conference Record Southcon, 1994

The I-V characteristics of metal oxide semiconductors has long been a subject of research by many scientists in the field of microelectronics. It is generally accepted that the current conduction in the thin gate oxide is due to the Fowler-Nordheim tunneling emission. However, there is quite a variation in the electrical properties and the Fowler-Nordheim tunneling parameters reported by researchers. ...


Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors

2016 IEEE International Electron Devices Meeting (IEDM), 2016

Through ab-initio quantum transport simulations the logic performance of single-layer InAs, InN, InP, and InSb III-V compounds is analyzed in this paper for n- and p-type applications. The key findings are that (i) the low electron effective masses of all these materials lead to very similar and attractive ON-currents in n-type transistors, but cause a rapid deterioration of their sub-threshold ...


THz emission of coherent plasmons in semiconductor superlattices

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013), 1999

Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from coherent plasma oscillations. The emission frequency of this THz source is given by the simple plasma frequency formula /spl omega//sub p/=(ne/sup 2//m*/spl epsiv/)/sup 1/2/ where n is the number of extrinsic electrons which are confined between the surface depletion field and the GaAs substrate. The ...



Educational Resources on Effective mass

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IEEE-USA E-Books

  • Simulations of the electronic properties of GaAs polytype superlattices

    We study the electronic properties of GaAs superlattices consisting of zincblende and wurtzite segments using a ten-band k·p model. Our simulations indicate that the simultaneous treatment of both the Γ7and the Γ8conduction bands is essential to achieve an accurate description of electron wave functions and energies.

  • Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)

    The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.

  • Analyzing the I-V characteristics of thin gate oxides using multiple regression

    The I-V characteristics of metal oxide semiconductors has long been a subject of research by many scientists in the field of microelectronics. It is generally accepted that the current conduction in the thin gate oxide is due to the Fowler-Nordheim tunneling emission. However, there is quite a variation in the electrical properties and the Fowler-Nordheim tunneling parameters reported by researchers. This is partially due to the presence of oxide charges which affects the I-V characteristics of the gate oxide and thereby the extracted parameters. The current conduction in the thin gate oxide is complicated; different mechanisms may dominate at different voltage regions. In this study, multiple regression analysis is utilized to determine the basic conduction process and to clarify the discrepancies in the literature.

  • Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors

    Through ab-initio quantum transport simulations the logic performance of single-layer InAs, InN, InP, and InSb III-V compounds is analyzed in this paper for n- and p-type applications. The key findings are that (i) the low electron effective masses of all these materials lead to very similar and attractive ON-currents in n-type transistors, but cause a rapid deterioration of their sub-threshold swing as the gate length shrinks to 10 nm and below, (ii) the p-type devices show much smaller and scattered current values that are too low to eventually challenge Si FinFETs, and (iii) the density-of- states bottleneck effect strongly influences the behavior of the n-type devices.

  • THz emission of coherent plasmons in semiconductor superlattices

    Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from coherent plasma oscillations. The emission frequency of this THz source is given by the simple plasma frequency formula /spl omega//sub p/=(ne/sup 2//m*/spl epsiv/)/sup 1/2/ where n is the number of extrinsic electrons which are confined between the surface depletion field and the GaAs substrate. The desired frequency can be controlled by changing the number of electrons n via the doping concentration of the material. Another possibility to determine the emission frequency /spl omega//sub p/ is to change the effective mass m* of the electrons. This can be accomplished by placing the electrons in the periodic potential of a superlattice. We study the GaAs/AlGaAs heterostructures which are three superlattices.

  • Are GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs

    A two-dimensional self-consistent Monte Carlo device modeling program is used to determine the behavior of submicron GaAs n-MOSFETs with semiconductor- insulator properties idealistically assumed to be of the same high caliber as present-day Si-SiO/sub 2/ interfaces. Compared to their conventional Si substrate counterparts, GaAs n-MOSFETs have similar transconductances and transit times, casting doubt on the notion that GaAs n-MOSFETs will ever outperform Si n-MOSFETs. Although alternative novel device designs better suited for exploiting the transport properties of bulk GaAs cannot be precluded, it is argued that the technological challenges of actually manufacturing GaAs devices further favor the use of silicon. These results can be predicted by considering the full semiconductor band structure away from the band extrema and suggest that differences among various semiconductors and carrier types are of diminishing importance for submicron devices.<<ETX>>

  • Cyclotron resonance in 2D electron systems of II-VI diluted magnetic semiconductors

    We have investigated the electron cyclotron resonance in the quantum Hall systems of II-VI semiconductors (Cd1-xMnxTe/CdMgTe quantum well) with the use of the THz and GHz frequency sources at steady high magnetic fields. Anomalous magnetic field dependence of the cyclotron resonance width originating in the localization of carriers has been observed in the CdMnTe/CdMgTe quantum well.

  • Enhancement of hole mobility due to confinement in small diameter [110] silicon nanowires

    We present results on a detailed computation of electron and hole low-field mobility for [110] axially oriented free standing SiNWs with diameters up to 3.1 nm and at various temperatures, where the principal charge scattering mechanism is through acoustic phonons, and both confined and bulk phonons are considered. The band structure for these SiNWs is determined by using a sp<sup>3</sup>d<sup>5</sup>s* TB scheme and the confined acoustic phonon dispersion for each SiNW is obtained by solving the elastic continuum wave equation. Bulk phonon dispersion is considered to be linear and a Debye cut- off energy is used to define the domain of bulk phonon wavevectors. Electron and hole - acoustic phonon scattering rates are calculated from the first order perturbation theory and deformation potential scattering, where TB electron and hole wavefunctions are incorporated. Finally, low-field mobility values are determined through momentum relaxation time approximation, and confirmed for electron-confined phonon interaction through ensemble Monte Carlo simulations.

  • Resonant tunneling in disordered materials such as SiO/sub 2//Si/SiO/sub 2/

    We have analyzed the effect of disorder in both the well and barriers of a resonant tunneling diode (RTD). If the disorder is limited solely to the barriers, a good peak-to-valley ratio (PVR) is expected. We describe a general guideline relating the PVR to the bulk mobility and effective mass of the well material of an RTD. We compare the effects of correlated versus uncorrelated disorder on the valley current. We discuss why interband tunnel devices such its the Esaki diode are more robust than RTDs in the presence of disorder.

  • Mechanical effects of attaching protein layers on nanoscale-thick cantilever beams for resonant detection of virus particles

    The purpose of this paper is to present experimental results on the alteration of mechanical properties and stiffness constant of nanoscale thick cantilever beams upon attachment of protein layers to the top and bottom surfaces of silicon cantilever beams. Depending on the initial unloaded spring constant value of the cantilever beams, the resonant frequencies were observed to either increase or decrease upon attachment of the protein layers. This depends on whether the increase in spring constant outweighs the increase in the added mass or vice-versa. The spring constant demarcation value at which the resonant frequency will either increase or decrease is estimated to be around 0.01 N/m for the present study.



Standards related to Effective mass

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IEEE Standard for Inertial Sensor Terminology

To review all of the definitions included in the standard and to revise them as required. New terminology will be added to bring the document up to date with current technology.