Conferences related to Diode And Transistor Temperature Sensors

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


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Periodicals related to Diode And Transistor Temperature Sensors

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Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Industrial Electronics, IEEE Transactions on

Theory and applications of industrial electronics and control instrumentation science and engineering, including microprocessor control systems, high-power controls, process control, programmable controllers, numerical and program control systems, flow meters, and identification systems.


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Most published Xplore authors for Diode And Transistor Temperature Sensors

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Xplore Articles related to Diode And Transistor Temperature Sensors

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Comprehensive comparison of integrated temperature sensors in CMOS-SOI technology

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015

This paper reviews the two most commonly used integrated temperature sensors available in CMOS-SOI technology: lateral PN diode and a standard MOSFET transistor. Both CMOS-SOI transistors and lateral diodes were designed and fabricated with a standard partially depleted CMOS -SOI 180nm process of IBM. Experimental results indicated that both lateral diodes and MOSFETs can be used to implement temperature sensors ...


Transistor temperature measurement for calibration of integrated temperature sensors

IMTC/2002. Proceedings of the 19th IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.00CH37276), 2002

A temperature measurement technique is presented for calibrating packaged integrated temperature sensors. An on-chip bipolar transistor is used to accurately determine the sensor's temperature during calibration. The transistor's base-emitter voltage is measured at three collector currents to find the absolute temperature while compensating for series resistances. The technique does not increase the pin count for a typical smart sensor, as ...


Temperature sensor applications of diode-connected MOS transistors

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353), 2002

The transconductance characteristics of a MOS transistor realized in a submicron technology have the zero-temperature coefficient (ZTC) bias point. The gate-source voltage of such transistor is linearly dependent on temperature when the transistor is diode-connected and biased by a current source. The slope of the dependence is related to the bias current value, and can be positive, negative or zero. ...


Si Diode Temperature Sensor beyond 300°C

2007 International Semiconductor Conference, 2007

This paper describes the performance of silicon diode as a temperature sensor when operated at extreme temperatures. Silicon p+-n-n+ junction diodes were designed in Cadence and fabricated in 1.0 μm SOI CMOS process. The diodes were operated from 22°C to 780°C at a constant current. This is for the first time in the literature we are showing that Si diode ...


Evaluation of temperature dependences of transistor characteristics in n-type, p-type, and pin-type poly-Si TFTs for temperature sensor application

2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014

We have evaluated temperature dependences of transistor characteristics in n-type, p-type, and pin-type poly-Si TFTs for temperature sensor application. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents, which are the same results as what were previously reported. Moreover, the temperature dependence of ...


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Educational Resources on Diode And Transistor Temperature Sensors

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IEEE.tv Videos

ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 7 of 7 - SQUID-based noise thermometers for sub-Kelvin thermometry
ITRI: Technology Advances in Flexible Displays and Substrates
Analog to Digital Traits
Bell Labs: The Transistor Milestone Event
Materials Challenges for Next-Generation, High-Density Magnetic Recording - Kazuhiro Hono: IEEE Magnetics Distinguished Lecture 2016
Breaking Spectral and Performance Barriers for Diode Lasers - Plenary Speaker, Manijeh Razeghi - IPC 2018
Performance, Environment, Actuators, Sensors (PEAS)
GaN HEMTs and Schottky Diodes
IMS 2012 Microapps - Reducing Active Device Temperature Rise and RF Heating Effects with High Thermal Conductivity Low Loss Circuit Laminates
M. George Craford accepts the IEEE Edison Medal - Honors Ceremony 2017
30 Years to High Temperature Superconductivity (HTS): Status and Perspectives
A Low Power High Performance PLL with Temperature Compensated VCO in 65nm CMOS: RFIC Interactive Forum
Yuan-ting Zhang AMA EMBS Individualized Health
Women In Engineering Focus on Technical Activities - Christina Schober - Sections Congress 2017
Ching W. Tang, Stephen R. Forrest and Mark E. Thompson receive the IEEE Jun-Ichi Nishizawa Medal - Honors Ceremony 2017
On the Characterization of Thermal Coupling Resistance in a Current Mirror: RFIC Industry Showcase 2016
2011 IEEE Jun-ichi Nishizawa Medal - Bernard J. Lechner, T. Peter Brody and Fang-Chen Luo
Molecular Cellular Networks: A Non von Neumann Architecture for Molecular Electronics - Craig Lent: 2016 International Conference on Rebooting Computing
Robot Redux: Lego's Mindstorms NXT in action
Advanced Capacitive Sensing for Consumer, Industrial, and Automotive Applications - Lecture by Dr. Hans Klein

IEEE-USA E-Books

  • Comprehensive comparison of integrated temperature sensors in CMOS-SOI technology

    This paper reviews the two most commonly used integrated temperature sensors available in CMOS-SOI technology: lateral PN diode and a standard MOSFET transistor. Both CMOS-SOI transistors and lateral diodes were designed and fabricated with a standard partially depleted CMOS -SOI 180nm process of IBM. Experimental results indicated that both lateral diodes and MOSFETs can be used to implement temperature sensors with high accuracy in room temperature and above, after a suitable calibration. It is shown that despite the linear behavior of both sensors the lateral diode has higher sensitivity, but a narrower useful temperature range. In addition, it is shown that lateral diodes exhibit much higher low frequency noise than standard MOSFETs, which can influence performance if the device is used as thermal sensor. The results of this study have impact on circuit design and may assist in choosing the optimal integrated temperature sensor or thermal sensor for SOI technology.

  • Transistor temperature measurement for calibration of integrated temperature sensors

    A temperature measurement technique is presented for calibrating packaged integrated temperature sensors. An on-chip bipolar transistor is used to accurately determine the sensor's temperature during calibration. The transistor's base-emitter voltage is measured at three collector currents to find the absolute temperature while compensating for series resistances. The technique does not increase the pin count for a typical smart sensor, as the transistor can be accessed via the supply pins and an existing digital input pin. Measurements on substrate pnp's in a standard CMOS process show that the temperature can be determined with an accuracy of /spl plusmn/0.1/spl deg/C in the range of -50-130/spl deg/C.

  • Temperature sensor applications of diode-connected MOS transistors

    The transconductance characteristics of a MOS transistor realized in a submicron technology have the zero-temperature coefficient (ZTC) bias point. The gate-source voltage of such transistor is linearly dependent on temperature when the transistor is diode-connected and biased by a current source. The slope of the dependence is related to the bias current value, and can be positive, negative or zero. Hence, the diode-connected transistor can be used as a controllable temperature sensor. This conclusion was experimentally verified using a circuit designed for 0.18 /spl mu/m CMOS technology.

  • Si Diode Temperature Sensor beyond 300°C

    This paper describes the performance of silicon diode as a temperature sensor when operated at extreme temperatures. Silicon p+-n-n+ junction diodes were designed in Cadence and fabricated in 1.0 μm SOI CMOS process. The diodes were operated from 22°C to 780°C at a constant current. This is for the first time in the literature we are showing that Si diode can operate as a temperature sensor at a ground breaking high temperature of up to 550°C reliably. The voltage vs temperature (V-T) slope was found around -1.3 mV/°C The graph becomes nonlinear above 550°C. Extensive simulation in 'Sentaurus Device' and theoretical calculation was carried out to match the diode temperature characteristics with the experimental results.

  • Evaluation of temperature dependences of transistor characteristics in n-type, p-type, and pin-type poly-Si TFTs for temperature sensor application

    We have evaluated temperature dependences of transistor characteristics in n-type, p-type, and pin-type poly-Si TFTs for temperature sensor application. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents, which are the same results as what were previously reported. Moreover, the temperature dependence of the off-leakage current in the pin-type TFT is as large as those in the n-type and p-type TFTs, which is a novel result obtained in this research. Based on these results, we propose diode connections, where the gate terminals are connected to the source terminals. In comparison with the diode connections of the n-type and p-type TFTs, that of the pin-type TFT has a flowing current relatively independent of the applied voltage, which is especially suitable for temperature sensor application. This is the first presentation reporting the temperature dependences of the pin-type poly-Si TFT and diode connections of the n-type, p-type, and pin-type poly-Si TFTs.

  • High-Linearity In-Pixel Thermal Sensor Using Low-Temperature Poly-Si Thin-Film Transistors

    A novel highly linear thermal sensing scheme with thin-film transistor (TFT) reuse in a pixel circuit is presented for accurately extracting thermal information of each pixel in a display panel. Since the proposed sensor reuses existing TFTs of display pixels, the sensor can be easily embedded on the pixel, resulting in high compatibility and low cost. High conversion linearity of the proposed sensor is achievable by detecting the voltage difference between two driving TFTs of adjacent pixels operating at unequal current densities; this is based on experimental concept that the I-V transfer characteristic of an low-temperature polycrystalline-silicon (LTPS)-TFT in a subthreshold region can be modeled as an Arrhenius-like equation. Trimming methods for pixel-to-pixel spread on sensor inaccuracy are suggested, as well. The proposed thermal sensor was fabricated by using LTPS-TFT process to test the feasibility of its structure. With one-end-point calibration, the proposed thermal sensor achieves a measured inaccuracy of ±6 °C (±3σ) from 30 °C to 70 °C. After a spatial averaging with 16 sensors, the measured inaccuracy of maximum ±0.6 °C was achieved.

  • Temperature effect on I-V characteristics of Si nanowire transistor

    This paper represents the temperature effect on silicon nanowire transistor and the possibility of using it as a temperature nanosensor. MuGFET simulation tool was used to investigate temperature characteristics of the nanowire transistors. Current-voltage characteristics with different values of temperature were simulated. Variation of sub threshold slope (SS), ON current to OFF current ratio (Ion/Ioff) and drain induced barrier lowering (DBIL) with working temperature was investigated. MOS diode connection suggested using the silicon nanowire transistor as a temperature nanosensor.

  • An on-chip temperature sensor by utilizing a MOS tunneling diode

    A simple metal-oxide-semiconductor (MOS) tunneling diode was demonstrated for application to an integrated temperature sensor. The MOS diode equipped with a 21-/spl Aring/ oxide was biased inversely at 1.8 V to monitor its substrate temperature through gate current. The gate current increased more than 700 times when the diode was heated from 20 to 110/spl deg/C. An exponential fitting curve correlated the gate current and the substrate temperature. Moreover, characteristics of the diode were analyzed though C-V and I/sub 1.8 V/-n/sub i/ curves. The good temperature response of the MOS tunneling diode might be useful in self-diagnosis or self-protection IC applications.

  • Light-emitting diode junction-temperature sensing using differential voltage/current measurements

    Given the temperature dependence of various aspects of light-emitting diode (LED) performance, LED temperature sensing is becoming increasingly important in solid-state lighting applications. This paper presents an electrical technique for junction-temperature sensing based on the measurement of the forward voltage and current of an LED at two bias points. This technique is inspired by techniques commonly used in temperature sensors based on bipolar transistors. While it leads to higher temperature errors than existing electrical techniques, which use the linear relationship between voltage and temperature at a fixed current, the proposed technique has the potential to significantly reduce calibration costs, as it requires calibration at only one temperature instead of two for existing techniques. Measurements of commercial high-power LEDs show that temperature errors can be reduced by using differential measurements around a fixed voltage-bias point instead of the more commonly used fixed current-bias point.

  • Integrated Hydrogen-Sensing Amplifier WithGaAsSchottky-Type Diode andInGaP–GaAsHeterojunction Bipolar Transistor

    New hydrogen-sensing amplifiers are fabricated by integrating a GaAs Schottky- type hydrogen sensor and an InGaP-GaAs heterojunction bipolar transistor. Sensing collector currents (ICNand ICH) reflecting to N2and hydrogen- containing gases are employed as output signals in common-emitter characteristics. Gummel-plot sensing characteristics with testing gases as inputs show a high sensing-collector-current gain (ICH/ICN) of > 3000. When operating in standby mode for in situ long-term detection, power consumption is smaller than 0.4 ¿W. Furthermore, the room-temperature response time is 85 s for the integrated hydrogen-sensing amplifier fabricated with a bipolar-type structure.



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