Dry etching

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Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions that dislodge portions of the material from the exposed surface. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically. (Wikipedia.org)






Conferences related to Dry etching

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


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Periodicals related to Dry etching

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Design & Test of Computers, IEEE

IEEE Design & Test of Computers offers original works describing the methods used to design and test electronic product hardware and supportive software. The magazine focuses on current and near-future practice, and includes tutorials, how-to articles, and real-world case studies. Topics include IC/module design, low-power design, electronic design automation, design/test verification, practical technology, and standards. IEEE Design & Test of ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Xplore Articles related to Dry etching

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Limits of VLSI

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1980

The industry is continuing to shrink devices and increase integration levels. The panel will discuss the fundamental limits and practical barriers to the on-going development of VLSI, including reliability and yield effects of scaling, hot electron trapping, soft errors, current density limitations, leakage and circuit design tradeoffs. The focus will be on technology, device and circuit considerations.


Technology And Optical Properties Of Semiconductor Quantum Wires

LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics, 1991

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Copper Interconnection with Tungsten Cladding for UlSI

1991 Symposium on VLSI Technology, 1991

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Dry Etch Damage In Quantum Wires

LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics, 1991

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Smooth And Clean Dry Etching Of GaAs And InP For OIEC Microfabrication

LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics, 1991

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Educational Resources on Dry etching

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IEEE-USA E-Books

  • Limits of VLSI

    The industry is continuing to shrink devices and increase integration levels. The panel will discuss the fundamental limits and practical barriers to the on-going development of VLSI, including reliability and yield effects of scaling, hot electron trapping, soft errors, current density limitations, leakage and circuit design tradeoffs. The focus will be on technology, device and circuit considerations.

  • Technology And Optical Properties Of Semiconductor Quantum Wires

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  • Copper Interconnection with Tungsten Cladding for UlSI

    None

  • Dry Etch Damage In Quantum Wires

    None

  • Smooth And Clean Dry Etching Of GaAs And InP For OIEC Microfabrication

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  • Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

    In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method

  • Simplified rear-side patterning for silicon heterojunction IBC solar cells: development of the in situ “nano-envelope” dry clean

    The heterojunction interdigitated back-contact (HJ IBC) cell technology enables remarkably high cell efficiencies, but requirescomplex processing for the rear-side patterning of the interdigitated a-Si:H electron and hole hetero-contacts. Therefore, the HJ IBC process flow must be simplified into a sequence that is cost-effective and industrially-compatible. Towards this goal, a litho-free, all-dry process sequence is being developed. As part of this simplified process flow, a novel in situ dry clean process called “nano- envelope” clean is developed to replace the wet cleaning after dry etching of a-Si:H. Surface contaminationanalysis and passivation studies prove that the developed dry clean is as effective as the standard wet clean. Since the “nano-envelope” clean can bedone in the same PECVD tool, the sequence from dry etching to repassivation can be done fully in situ.

  • A novel self-aligned epitaxial base transistor

    The authors propose SATURN (self-alignment technology utilizing reserved nitride), a high-speed bipolar LSI technology. An advanced SATURN process, utilizing selective epitaxial technology, has been developed in order to improve the high-speed capability. It makes possible an emitter width of less than 0.4 mu m, a base area width of less than 2 mu m, and a base width of 1500 AA. Furthermore, a base width of 800 AA was realized by collector phosphorus doping using low-energy ion implantation, just before the deposition of base epitaxy.<<ETX>>

  • New edge-defined vertical-etch approaches for submicrometer MOSFET fabrication

    This paper describes a new, convenient "undercut and backfill" technique for forming edge-defined submicrometer elements based only on standard optical lithography and vertical (anisotropic) dry etching. MOSFETs having physical channel lengths from<tex>0.3 \micro</tex>m to<tex>\simeq 1.0 micro</tex>m can be fabricated using this approach, This method is compared with an alternative vertical etch, edge-defined technique which is capable of fabricating physical gate lengths oF<tex>0.1-0.4 \micro</tex>m. In particular, MOSFETs having<tex>L \simeq 0.1 \micro</tex>m, believed to be the smallest reported to date, have been made. A vertical etching technique which forms a passivating sidewall oxide is also described. Modifications of this technique to fabricate self- aligned shallow/deep n+/n++ junctions having reduced series resistance and short-channel effects (in particular punchthrough) are illustrated.

  • A New MoSi2/Thin-Poly Si Gate Process

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