IEEE Organizations related to Drain avalanche hot carrier injection

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Conferences related to Drain avalanche hot carrier injection

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

ISPSD is the premier annual IEEE conference in the area of power semiconductor devices and ICs. The conference covers a wide range of technical topics including wide bandgap semiconductor materials and devices, silicon power devices, power ICs, device physics and modeling, device packaging, and power electronics applications.


2018 International Integrated Reliability Workshop (IIRW)

The IEEE International Integrated Reliability Workshop (IIRW) focuses on ensuring electronicdevice reliability through fabrication, design, testing, characterization, and simulation, as well asidentification of the defects and physical mechanisms responsible for reliability problems.Topics include: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliabilityassessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliabilityincluding hot carriers and NBTI/PBTI, root cause defects (physical mechanisms andsimulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuitreliability, MEMS and sensor reliability, designing-in reliability (products, circuits, systems,processes), customer product reliability requirements / manufacturer reliability tasks, wafer levelreliability tests (test approaches and reliability test structures), reliability modeling and simulation, optoelectronics, and single event upsets.

  • 2017 IEEE International Integrated Reliability Workshop (IIRW)

    The IEEE International Integrated Reliability Workshop (IIRW) focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Topics include: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, MEMS and sensor reliability, designing-in reliability (products, circuits, systems, processes), customer product reliability requirements / manufacturer reliability tasks, wafer level reliability tests (test approaches and reliability test structures), reliability modeling and simulation, optoelectronics, and single event upsets.

  • 2016 IEEE International Integrated Reliability Workshop (IIRW)

    We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits, systems, processes), customer product reliability requirements / manufacturer reliability tasks, wafer level reliability tests (test approaches and reliability test structures), reliability modeling and simulation, optoelectronics, and single event upsets.

  • 2015 IEEE International Integrated Reliability Workshop (IIRW)

    We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits, systems, processes), customer product reliability requirements / manufacturer reliability tasks, wafer level reliability tests (test approaches and reliability test structures), reliability modeling and simulation, optoelectronics, and single event upsets.

  • 2014 IEEE International Integrated Reliability Workshop (IIRW)

    The IIRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems

  • 2013 IEEE International Integrated Reliability Workshop (IIRW)

    We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)

  • 2005 IEEE International Integrated Reliability Workshop (IRW)

  • 2004 IEEE International Integrated Reliability Workshop (IRW)

  • 2003 IEEE International Integrated Reliability Workshop (IRWS)

  • 2002 IEEE International Integrated Reliability Workshop (IRWS)

  • 2001 IEEE International Integrated Reliability Workshop (IRWS)

  • 2000 IEEE International Integrated Reliability Workshop (IRWS)

  • 1999 IEEE International Integrated Reliability Workshop (IRWS)

  • 1998 IEEE International Integrated Reliability Workshop (IRWS)

  • 1997 IEEE International Integrated Reliability Workshop (IRWS)

  • 1996 IEEE International Integrated Reliability Workshop (IRWS)


2018 Non-Volatile Memory Technology Symposium (NVMTS)

An international forum establishes a platform for the discussion of state of the art and emerging memory technologies , such as FLASH, FeRAM, PCRAM, RRAM or MRAM.


ESSDERC 2018 - 48th European Solid-State Device Research Conference (ESSDERC)

European forum for the presentation and discussion of recent advances in solid-state devicesand circuits. The increasing level of integration for system-on-chip design made available byadvances in silicon technology is, more than ever before, calling for a deeper interaction amongtechnologists, device experts, IC designers, and system designers

  • ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)

    European forum for the presentation and discussion of recent advances in solid-state devices and circuits. The increasing level of integration for system-on-chip design made available by advances in silicon technology is, more than ever before, calling for a deeper interaction among technologists, device experts, IC designers, and system designers

  • ESSDERC 2016 - 46th European Solid-State Device Research Conference

    The aim of ESSDERC and ESSCIRC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits. The increasing level of integration for system-on-chip design made available by advances in silicon technology is, more than ever before, calling for a deeper interaction among technologists, device experts, IC designers, and system designers. While keeping separate Technical Program Committees, ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered for either conference are encouraged to attend any of the scheduled parallel sessions, regardless to which conference they belong.

  • ESSDERC 2015 - 45th European Solid-State Device Research Conference

    The ESSDERC conference is collocated with the ESSCIRC conference at the same time. The aim of ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits. The increasing level of integration for system-on-chip design made available by advances in silicon technology is, more than ever before, calling for a deeper interaction among technologists, device experts, IC designers, and system designers. While keeping separate Technical Program Committees, ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered for either conference are encouraged to attend any of the scheduled parallel sessions, regardless to which conference they belong.

  • ESSDERC 2014 - 44th European Solid State Device Research Conference

    The aim of ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits. The increasing level of integration for system-on-chip design made available by advances in silicon technology is, more than ever before, calling for a deeper interaction among technologists, device experts, IC designers, and system designers. While keeping separate Technical Program Committees, ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered for either conference are encouraged to attend any of the scheduled parallel sessions, regardless to which conference they belong.

  • ESSDERC 2013 - 43rd European Solid State Device Research Conference

    The ESSDERC conference provides an annual European forum for the presentation and discussion of recent advances in solid-state devices and process technology. The conference is organized jointly with ESSCIRC (18606), which covers advances in circuit technology.

  • ESSDERC 2012 - 42nd European Solid State Device Research Conference

    The aim of the ESSDERC conference is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices.

  • ESSDERC 2011 - 41st European Solid State Device Research Conference

    The aim of the ESSDERC conference is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and technologies. ESSDERC and its sister conference ESSCIRC, which deals with solid-state circuits, are jointly organised.

  • ESSDERC 2010 - 40th European Solid State Device Research Conference

    The aim of the ESSDERC conference is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and technologies. ESSDERC 2010 wll the 40th even of this series of conferences which has been running under the technical sponsorship of IEEE.

  • ESSDERC 2009 - 39th European Solid State Device Research Conference

    The aim of the ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and technologies. The aim of the ESSCIRC is to provide corresponding forum in the field of silicon design and implementation.

  • ESSDERC 2008 - 38th European Solid State Device Research Conference

    The aim of the ESSDERC conference is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and technologies. ESSDERC and its sister conference ESSCIRC, which focuses on solid-state circuits, share a single Steering Committee, and are held together to enable both communities to share advances in the technologies and design which enable increasing levels of sophistication and performance in integrated systems.

  • ESSDERC 2007 - 2007 37th European Solid State Device Research Conference

  • ESSDERC 2006 - 2006 36th European Solid State Device Research Conference

  • ESSDERC 2005 - 2005 35th European Solid State Device Research Conference

  • ESSDERC 2004 - 2004 34th European Solid State Device Research Conference

  • ESSDERC 2003 - 2003 33rd European Solid State Device Research Conference


SC18: International Conference for High Performance Computing, Networking, Storage and Analysis

Established in 1988, the annual SC conference continues to grow steadily in size and impact each year. Approximately 5,000 people participate in the technical program, with about 11,000 people overall.SC has built a diverse community of participants including researchers, scientists, application developers, computing center staff and management, computing industry staff, agency program managers, journalists, and congressional staffers. This diversity is one of the conference's main strengths, making it a yearly "must attend" forum for stakeholders throughout the technical computing community.The technical program is the heart of SC. It has addressed virtually every area of scientific and engineering research, as well as technological development, innovation, and education. Its presentations, tutorials, panels, and discussion forums have included breakthroughs in many areas and inspired new and innovative areas of computing.



Periodicals related to Drain avalanche hot carrier injection

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Drain avalanche hot carrier injection

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Xplore Articles related to Drain avalanche hot carrier injection

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Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's

IEEE Electron Device Letters, 1983

Drain avalanche hot-carrier (DAHC) injection, which imposes the most severe limitations on n-channel MOS device design, is investigated from the viewpoint of surface-state generation and its localized area in the channel. It is shown, using the charge pumping technique, that the surface states are mainly created by hot-hole injection, and its small degraded area stretches toward the source region with ...


A model for MOS failure prediction due to hot-carriers injection

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting, 1996

One of the main concerns in the submicron MOS technologies is the device lifetime associated with the hot carrier injection which causes the MOS to degrade. Many previous works have shown that the degradation is strongly related to the device substrate current. This paper develops a simple substrate current model and a comprehensive failure prediction model to predict the MOS ...


Device performance degradation to hot-carrier injection at energies below the Si-SiO<inf>2</inf>energy barrier

1983 International Electron Devices Meeting, 1983

Device performance degradation due to hot-carriers having energies below the Si-SiO2energy barrier are examined. For a test device with Leff= 0.3 µm and Tox5 nm, transconductance degradation and/or threshold voltage shift have been detected at a drain voltage of 2.5 V, which is lower than the Si-SiO2energy barrier(∼ 3.2 eV). In particular, transconductance degradation, rather than threshold voltage shift, is ...


TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET

International Conferencre on Simulation of Semiconductor Processes and Devices, 2002

We present a TCAD driven hot carrier reduction methodology of 3.3V I/O p-MOSFETs design. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and I/sub ON/, HALO/SDE of both core and I/O transistors can be totally optimized for photo-mask reduction.


A comprehensive methodology and model for the characterization of hot-carrier induced MOS device degradation

Proceedings of First International Caracas Conference on Devices, Circuits and Systems, 1995

One of the main concerns in the submicron MOS technologies is the device lifetime associated with the hot carrier injection into the gate oxide due to the high electric fields on the drain/source terminals or across the channel. Many previous works have been devoted to the MOS device degradation theory and the lifetime prediction. This paper, on the other hand, ...


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IEEE-USA E-Books

  • Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's

    Drain avalanche hot-carrier (DAHC) injection, which imposes the most severe limitations on n-channel MOS device design, is investigated from the viewpoint of surface-state generation and its localized area in the channel. It is shown, using the charge pumping technique, that the surface states are mainly created by hot-hole injection, and its small degraded area stretches toward the source region with increased stress time. A remarkable correlation between the increase of surface-state density, transconductance degradation, and substrate current is also described. In addition, to clarify the role of hot- hole injection, p-channel devices, as well as n-channel devices, are used, and hot-hole injection is shown to create more surface states than hot-electron injection.

  • A model for MOS failure prediction due to hot-carriers injection

    One of the main concerns in the submicron MOS technologies is the device lifetime associated with the hot carrier injection which causes the MOS to degrade. Many previous works have shown that the degradation is strongly related to the device substrate current. This paper develops a simple substrate current model and a comprehensive failure prediction model to predict the MOS lifetime as a function of channel length and applied drain voltage. Therefore, the transistor lifetime for different MOS geometries under various drain voltages can easily be determined. This model is useful for determining the channel length that will provide 10-20 years DC lifetime for the MOS technologies where current lifetime for the minimum channel length is much less than 10 years.

  • Device performance degradation to hot-carrier injection at energies below the Si-SiO<inf>2</inf>energy barrier

    Device performance degradation due to hot-carriers having energies below the Si-SiO2energy barrier are examined. For a test device with Leff= 0.3 µm and Tox5 nm, transconductance degradation and/or threshold voltage shift have been detected at a drain voltage of 2.5 V, which is lower than the Si-SiO2energy barrier(∼ 3.2 eV). In particular, transconductance degradation, rather than threshold voltage shift, is more noticeable. No sharp cut-off is shown near a drain voltage of 3 V. This transconductance degradation is mainly due to an interface state increase caused by drain avalanche hot-carrier injection. It was also found that the time, τ, that it takes forG_{m} or V_{th}to degrade a certain degree, can be expressed as\tau \propto (1/V_{D})for a VDrange of greater than 2.5 V. This degradation occurs in the same way as for long channel devices at VD> 3 V. Thus, hot carrier-related device degradation may be one of the most stringent problems in submicron MOS FETs, even after the power supply voltage is reduced.

  • TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET

    We present a TCAD driven hot carrier reduction methodology of 3.3V I/O p-MOSFETs design. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and I/sub ON/, HALO/SDE of both core and I/O transistors can be totally optimized for photo-mask reduction.

  • A comprehensive methodology and model for the characterization of hot-carrier induced MOS device degradation

    One of the main concerns in the submicron MOS technologies is the device lifetime associated with the hot carrier injection into the gate oxide due to the high electric fields on the drain/source terminals or across the channel. Many previous works have been devoted to the MOS device degradation theory and the lifetime prediction. This paper, on the other hand, presents a comprehensive methodology and model for hot-carrier stressing and lifetime characterization. Since the model takes into account the lifetime dependence on the channel length and the applied drain voltage, the transistor lifetime for different MOS geometries under various drain voltages can be easily determined. This model is useful to determine the channel length that will provide 10-20 years DC lifetime for the MOS technologies, where the lifetime for the minimum channel length is much less than 10 years.

  • AC hot-carrier effects in scaled MOS devices

    AC hot-carrier effects with complete precautions against the wiring inductance noises were investigated to get a universal guideline from the viewpoints of AC conditions and device structures (single drain (SD), LDD, and GOLD). Pulse- induced-noises due to the wiring inductance of measurement systems screens intrinsic AC effects. After precautions against noises, AC hot-carrier degradation can be estimated in LDD on the basis of DC measurements. The noise is negligible for degradation when the wiring inductance is smaller than 250 m Omega . In terms of device structure dependence, for SD and LDD, enhanced AC degradation was observed during channel hot-electron (CHE) stress. No acceleration occurred with drain avalanche hot-carrier (DAHC). In LDD, this enhancement can be attributed to stronger DAHC stress during gate pulse transients, while in SD, trapping of channel hot electrons at neutral traps created at the rising and the falling edges of gate pulses acted as an additional acceleration factor. In the case of GOLD, however, no difference between AC and DC stress was seen for DAHC or CHE conditions, and CHE stress was more severe than DAHC stress, which was possibly due to a large gate current characteristic.<<ETX>>

  • AC hot-carrier effect under mechanical stress (MOSFET)

    An AC hot-carrier effect observed under uniaxial mechanical stress is discussed. The effect is due to trap level lowering induced by compressive mechanical stress. In channel hot electron injection, the trap level lowering results in an electron detrapping and a reduction of surface state generation which is not observed for DC stress. These results are significant for nanoscale device design.<<ETX>>

  • Investigation to suppress hot carrier effect in pocket-implanted nMOSFET by full band Monte Carlo simulation

    We have clarified two dimensional hot carrier (HC) properties of pocket implanted nMOSFETs by full band Monte Carlo device simulation, and we have shown that the HC generation can be suppressed, keeping better V/sub th/ roll- off, without deterioration of driving capability by properly choosing the pocket implant tilt angle. We have also confirmed this by measurements of gate and substrate currents and device lifetime of sub-quarter micron nMOSFETs.

  • A hot carrier induced low-level leakage current in thin silicon dioxide films

    A new kind of stress induced low level leakage current (LLLC) in thin silicon dioxide is reported. It is observed after the stress of hot hole injection at the drain edge. Since the voltage dependence of this new kind of LLLC is steeper than that in the conventional FN stress-induced LLLC, each conduction mechanism may be different. This LLLC is reduced by both hot electron injection and UV irradiation. These reductions are never observed in the FN stress-induced LLLC. The most promising conduction mechanism is sequential tunneling via trapped holes.

  • Hot Carrier Degradation Mechanism Under Pulsed Stress in Mosfets

    None



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