Conferences related to Doping profiles

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2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


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Periodicals related to Doping profiles

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Xplore Articles related to Doping profiles

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The Planar-Doped-Barrier-FET: MOSFET Overcomes Conventional Limitations

27th European Solid-State Device Research Conference, 1997

None


Dielectrically isolated ICs made with preferential etching

1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1977

None


Vertical charge-coupled devices

1979 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1979

None


Progress with high efficiency IMPATT diodes

1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1977

None


Modeling high-level free carrier injection in advanced bipolar junction transistors

Proceedings of 4th International Conference on Solid-State and IC Technology, 1995

This paper presents a comprehensive study on the effects of high-level free- carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the ...


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Educational Resources on Doping profiles

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IEEE-USA E-Books

  • The Planar-Doped-Barrier-FET: MOSFET Overcomes Conventional Limitations

    None

  • Dielectrically isolated ICs made with preferential etching

    None

  • Vertical charge-coupled devices

    None

  • Progress with high efficiency IMPATT diodes

    None

  • Modeling high-level free carrier injection in advanced bipolar junction transistors

    This paper presents a comprehensive study on the effects of high-level free- carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the QNB. Our results suggest that the widely used zero majority current approximation gives rise to a larger error compared to other lesser known approximations.

  • High-voltage planar p-n junctions

    A concentric ring junction has been devised to prevent surface breakdown of a planar junction. By properly choosing the spacing between the main junction and the ring, the ring junction acts like a voltage divider at the surface. In addition, the ring junction minimizes the effect of the junction curvature at the periphery of a planar junction. Devices fabricated with three such rings showed breakdown voltages of 2000 and 3200 volts on n-type silicon with impurity concentrations 6.5 × 1013and 2.5 × 1013cm-3, respectively. That the structure operated as proposed was corroborated by comparison of the reverse leakage current with a one parameter fit to a theoretically calculated current obtained from the approximated volume of the space charge regions. These results together with the photo response measurements indicate that the field- limiting ring junction can be used successfully to obtain high-voltage planar p-n junctions.

  • Silicon permeable base transistors for low-phase-noise oscillator applications up to 20 GHz

    Silicon permeable-base transistors (PBTs) have been fabricated that exhibit a small-signal short-circuit current gain frequency exceeding 20 GHz and a maximum frequency of oscillation near 30 GHz. This transistor has been used to realize voltage-controlled oscillators at C-band, X-band, and Ku-band that have provided low phase noise. The advantage of the device for oscillator applications arises because the Si PBT combines the low 1/f and phase noise properties of Si bipolar devices with the high-frequency capability of the GaAs FET. The current device designs have not yet been optimized for either minimum-phase noise or maximum output power.<<ETX>>

  • A physically based parameter extraction scheme for SCR models

    This paper presents a physically based parameter extraction scheme for SCR models. The methods are discussed and demonstrated with an example. The comparison between simulated and measured device behaviour shows agreement within 15% tolerance.

  • Regular oscillation in two-section laser structures based on /spl delta/-doped superlattices

    It is theoretically shown that in two-section laser structures based on /spl delta/-doped superlattices a broadened spectral tuning is realised under special requirements for the parameters and excitation conditions in the gain and absorbing sections. The tuning occurs in the stationary operation, during transient process, and regular pulsation regime as well. In the GaAs /spl delta/-doped superlattice lasers, the tuning range covers of up to 60 nm in near infra-red.

  • 3D simulation of cross-shaped Hall sensor and its equivalent circuit model

    The complete technology process flow and electrical characteristics of cross- shaped Hall sensor in high voltage bulk CMOS technology have been accurately simulated in 2D and 3D using ISE TCAD system. Consistent 3D doping profile is obtained by interpolation, exchanging data between several 2D doping profiles. In order to facilitate the analysis of an electrical circuit incorporating a Hall sensor, an appropriate equivalent circuit model of cross-shaped Hall sensor with voltage control non-linear resistors is suggested. Finally, the results acquired by 3D electrical characteristic simulations using ISE tool DESSIS and equivalent-circuit analyses using program SPICE are compared.



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