Conferences related to Doping

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


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Periodicals related to Doping

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


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Xplore Articles related to Doping

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New analytical expressions for dark current calculations of highly doped regions in semiconductor devices

IEEE Transactions on Electron Devices, 1997

We studied highly doped quasi-neutral regions of semiconductor devices with position dependent doping concentration in the absence of illumination. An important parameter of a highly doped region is its dark current. To clarify how the doping profile influences the dark current, simple analytical expressions are useful. To this end, we first transformed the transport equations to a simple dimensionless form. ...


Bias sweep rate effects on quasi-static capacitance of MOS capacitors

IEEE Transactions on Electron Devices, 1997

MOS capacitance measurements are very fundamental characterization methods for MOS and FET structures. This paper discusses the effects of a finite bias sweep rate on quasi-static and high-frequency (HF) capacitance-voltage (C-V) measurements. As typically measured, a finite sweep rate causes the transition region from inversion to depletion of the quasistatic C-V curve to be shifted by several tenths of a ...


Minority-carrier transport in nonuniformly doped silicon-an analytical approach

IEEE Transactions on Electron Devices, 1990

A general analytical solution for minority-carrier transport in a nonuniformly doped quasi-neutral silicon region is derived. It is shown that, in the cases of an exponential doping-density profile and a general power-law doping- density profile, a closed-form solution for the minority-carrier concentration can be obtained for doping densities up to 10/sup 20/ cm/sup -3/. In the analysis, the experimentally observed ...


One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors

IEEE Transactions on Electron Devices, 1989

A systematic method is presented for deriving non-quasi-static equivalent- circuit models for arbitrarily doped and heavily doped quasi-neutral layers in bipolar transistors. The large-and small-signal models developed improve various aspects of the one-dimensional Gummel-Poon model for transient and frequency circuit simulation. The improvements are assessed by computer simulation and by experiment. In the simulation of high-speed or high- frequency bipolar ...


Metallic temperature dependence of resistivity in heavily doped polyacetylene by NMR

International Conference on Science and Technology of Synthetic Metals, 1994

Summary form only given. H-NMR spin-lattice relaxation rate T/sub 1//sup -1/ of heavily doped polyacetylene was measured in an attempt to study the spin dynamics of its conduction electrons. Films synthesized by standard Shirakawa method and non-solvent method were doped with FSO/sub 3/H, HClO/sub 4/, iodine, bromine and potassium in vapor phase. Against our intention, in all of the samples ...


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Educational Resources on Doping

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IEEE-USA E-Books

  • New analytical expressions for dark current calculations of highly doped regions in semiconductor devices

    We studied highly doped quasi-neutral regions of semiconductor devices with position dependent doping concentration in the absence of illumination. An important parameter of a highly doped region is its dark current. To clarify how the doping profile influences the dark current, simple analytical expressions are useful. To this end, we first transformed the transport equations to a simple dimensionless form. This enables us to write already existing analytical expressions in an elegant way. It is demonstrated how, from any analytical dark current expression, a direct counterpart can be derived. Next, we derived a dimensionless form for a nonlinear first-order differential equation for the effective recombination velocity. Starting from the analytical solution of this differential equation for uniformly doped regions and using linearization techniques, we obtained two new simple and accurate expressions for the dark current. The expressions are valid for general doping profiles with different minority carrier transparencies. The exact solution is included between both new approximate solutions. The new expressions are compared with previous approximate solutions.

  • Bias sweep rate effects on quasi-static capacitance of MOS capacitors

    MOS capacitance measurements are very fundamental characterization methods for MOS and FET structures. This paper discusses the effects of a finite bias sweep rate on quasi-static and high-frequency (HF) capacitance-voltage (C-V) measurements. As typically measured, a finite sweep rate causes the transition region from inversion to depletion of the quasistatic C-V curve to be shifted by several tenths of a volt along the bias voltage axis. The physical origin of this shift as well as a model to account for the effect is discussed. In order to understand quasi-static MOS C-V measurements and to extract fundamental parameters such as substrate doping density and polysilicon depletion effects from C-V measurements, these bias sweep rate effects must be understood and taken into account.

  • Minority-carrier transport in nonuniformly doped silicon-an analytical approach

    A general analytical solution for minority-carrier transport in a nonuniformly doped quasi-neutral silicon region is derived. It is shown that, in the cases of an exponential doping-density profile and a general power-law doping- density profile, a closed-form solution for the minority-carrier concentration can be obtained for doping densities up to 10/sup 20/ cm/sup -3/. In the analysis, the experimentally observed dependencies of minority-carrier lifetime, minority-carrier mobility, and bandgap narrowing on doping density are taken into account. Contrary to earlier analytical solutions, the solution is free of integrals of minority-carrier transport parameters over the semiconductor region under study. Three important bipolar device configurations in which a nonuniform doping density plays a role are analyzed with the analytical solution. The first is the drift-field solar cell, for which a factor-of-20 reduction in the dark saturation current compared with a uniformly doped solar cell is calculated. Second, the effective back-surface recombination velocity of a high/low junction back-surface field (BSF) cell is shown to decrease with increasing BSF region thickness. Third, the influence of surface recombination velocity on the minority-carrier concentration profile in a heavily doped emitter is reduced when a strong power law doping profile in an n-p junction device is used.<<ETX>>

  • One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors

    A systematic method is presented for deriving non-quasi-static equivalent- circuit models for arbitrarily doped and heavily doped quasi-neutral layers in bipolar transistors. The large-and small-signal models developed improve various aspects of the one-dimensional Gummel-Poon model for transient and frequency circuit simulation. The improvements are assessed by computer simulation and by experiment. In the simulation of high-speed or high- frequency bipolar integrated circuits, the models show advantages over the conventional Gummel-Poon model. It is shown that non-quasi-static effects are significant in the emitter as well as the base layer. The method is developed for homojunction bipolar transistors but in principle applies also to heterojunction bipolar transistors.<<ETX>>

  • Metallic temperature dependence of resistivity in heavily doped polyacetylene by NMR

    Summary form only given. H-NMR spin-lattice relaxation rate T/sub 1//sup -1/ of heavily doped polyacetylene was measured in an attempt to study the spin dynamics of its conduction electrons. Films synthesized by standard Shirakawa method and non-solvent method were doped with FSO/sub 3/H, HClO/sub 4/, iodine, bromine and potassium in vapor phase. Against our intention, in all of the samples a metallic behavior in the T/sub 1//sup -1/ arising from quasi- one-dimensional motion of conduction electrons was not found for some time after doping, and it was revealed that the T/sub 1//sup -1/ was governed by a relaxation mechanism due to residual Curie spins. The results of T/sub 1//sup -1/ for the samples other than the bromine-doped sample did not show the metallic behavior after all, whereas for the bromine-doped one a change in the temperature dependence of T/sub 1//sup -1/ from the non-metallic behavior to the metallic one was found as time passed. It was confirmed that this change was caused by the partial substitution of hydrogen atoms in the polyacetylene chain by bromine atoms. We first succeeded in deducing the temperature dependence of intrinsic resistivity for metallic polyacetylene from the data of T/sub 1/sup -1/.

  • Modeling of through diffusion profile in the volume of silicon substrate

    1-D model of doping diffusion in silicon from limited source on planar and non-planar side of silicon substrate with taking into attention the segregation of doping on the interface with blocking oxide is developed. A conditions for controlling the parameters of profiles in the depth of the silicon substrate is defined.

  • Calculation of I-V curves of a GaAs MESFET with nonuniform channel doping by means of numerical integration

    A numerical method for calculating the I-V characteristics of a GaAs MESFET with ion implanted layer is presented. This method is based on the finding of the channel conductance as a function of the voltage drop across the metal- semiconductor junction which in turn is related to the depletion depth of the active layer through the solution of Poisson's equation.<<ETX>>

  • Study of the effects of a stepped doping profile in short-channel MOSFETs

    The performance of a stepped doping profile for improving the short-channel behavior of a submicrometer MOSFET has been analyzed in detail by using a quasi-two-dimensional (quasi-2-D) MOSFET simulator including inversion-layer quantization coupled with a one-electron Monte Carlo simulation. Several second-order effects, such as mobility degradation both by bulk-impurity and interface traps, carrier-velocity saturation, and channel-length modulation, have been included in the simulator. Very good agreement between experimental and simulated results is obtained for short-channel transistors. It has been shown that including a low-doped zone of convenient thickness next to the interface over a high doping substrate improves both the electron mobility and the threshold voltage of the device, while avoiding short-channel effects. The use of simulation has allowed us to study certain kinds of devices without needing to make them.

  • Modeling the Early Effect in Bipolar Transistors

    For convenience in dc and small-signal low-frequency calculations, the effect of base width modulation (Early effect) on a bi-polar transistor- operating under low-level injection conditions in the forward-active mode--cans be taken into account by the use of a multiplying factor that is exponentially dependent on collector-base voltage.

  • Dissolution and redeposition behavior of C/sub 60/ films

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