Conferences related to Distributed feedback devices

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2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 Optical Fiber Communications Conference and Exhibition (OFC)

The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.


2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC)

OECC/PSC is one of the biggest worldwide conference on the optical communication, interconnects, and switching technologies. The scope includes optoelectronic components and devices, optical systems, optical interconnects, transmission, and networking.


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


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Periodicals related to Distributed feedback devices

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Electromagnetic Compatibility, IEEE Transactions on

EMC standards; measurement technology; undesired sources; cable/grounding; filters/shielding; equipment EMC; systems EMC; antennas and propagation; spectrum utilization; electromagnetic pulses; lightning; radiation hazards; and Walsh functions


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Industrial Electronics, IEEE Transactions on

Theory and applications of industrial electronics and control instrumentation science and engineering, including microprocessor control systems, high-power controls, process control, programmable controllers, numerical and program control systems, flow meters, and identification systems.


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Most published Xplore authors for Distributed feedback devices

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Xplore Articles related to Distributed feedback devices

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Nonlinear Guided Wave Grating Phenomena

Digest on Nonlinear Optics: Materials, Phenomena and Devices, 1990

None


Short 17-cm DBR Raman Fiber Laser With a Narrow Spectrum

IEEE Photonics Technology Letters, 2012

We present experimental results on the lasing of a short distributed Bragg reflector (DBR) Raman fiber laser (RFL) with short cavity length. The high finesse laser cavity with an effective length of 17 cm was realized by direct inscription of two Bragg gratings into a short piece of highly nonlinear polarization maintaining Raman fiber. It is pumped by an Ytterbium ...


Effective nonlinear gain in semiconductor lasers

IEEE Photonics Technology Letters, 1992

An effective nonlinear gain is introduced for semiconductor lasers by taking into account the effect of laser structure and the associated distribution of the mode intensity along the cavity length. It should be used in the analysis of laser dynamics and noise in place of the material nonlinear gain parameter. A general expression for the effective nonlinear gain is given ...


Characterization of a distributed feedback laser with air/semiconductor gratings embedded by the wafer fusion technique

IEEE Journal of Quantum Electronics, 1999

Wafer fusion between patterned or structured wafers is very useful in the construction of new optical materials and/or devices that have submicrometer- order structures inside semiconductors. In order to investigate the feasibility of wafer fusion for this purpose, a distributed feedback (DFB) laser wafer developed which has air/semiconductor gratings that are embedded using the wafer fusion technique. In this paper, ...


Terabit/second transmission experiments

IEEE Journal of Quantum Electronics, 1998

This paper discusses the reasons for the recent acceleration in the exponential growth rate of single-fiber transmission capacity. The various transmission experiments with capacities of 1 Tb/s and greater are reviewed.


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Educational Resources on Distributed feedback devices

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IEEE-USA E-Books

  • Nonlinear Guided Wave Grating Phenomena

    None

  • Short 17-cm DBR Raman Fiber Laser With a Narrow Spectrum

    We present experimental results on the lasing of a short distributed Bragg reflector (DBR) Raman fiber laser (RFL) with short cavity length. The high finesse laser cavity with an effective length of 17 cm was realized by direct inscription of two Bragg gratings into a short piece of highly nonlinear polarization maintaining Raman fiber. It is pumped by an Ytterbium fiber laser at 1100 nm with up to 8 W pump power. The Stokes wave at 1151 nm is generated within the DBR RFL with 700-mW output power and a narrow spectral full-width at half-maximum bandwidth of 60 pm. Due to the short cavity length, the number of oscillating longitudinal modes is strongly reduced to less than 24 modes. The short DBR RFL has a low lasing threshold of 4.1 W. Its spectral properties and temporal stability are investigated. Distinct longitudinal cavity modes could be observed within the radio-frequency intermode-beat spectrum detected with a fast photodiode. The measured mode separation of 607 MHz validates the short effective length of 17 cm.

  • Effective nonlinear gain in semiconductor lasers

    An effective nonlinear gain is introduced for semiconductor lasers by taking into account the effect of laser structure and the associated distribution of the mode intensity along the cavity length. It should be used in the analysis of laser dynamics and noise in place of the material nonlinear gain parameter. A general expression for the effective nonlinear gain is given by using the Green's function method. The results obtained for Fabry-Perot and distributed feedback lasers show that the effective nonlinear gain could be considerably enhanced. The exact value of the enhancement factor depends on cavity parameters. Affected by the laser structure, the nonlinear gain has a different power dependence than expected from material considerations alone.<<ETX>>

  • Characterization of a distributed feedback laser with air/semiconductor gratings embedded by the wafer fusion technique

    Wafer fusion between patterned or structured wafers is very useful in the construction of new optical materials and/or devices that have submicrometer- order structures inside semiconductors. In order to investigate the feasibility of wafer fusion for this purpose, a distributed feedback (DFB) laser wafer developed which has air/semiconductor gratings that are embedded using the wafer fusion technique. In this paper, the characteristics of the newly developed DFB laser and the coupling coefficient are investigated. Single-longitudinal-mode oscillation at 1.28 /spl mu/m is achieved under pulsed conditions at room temperature with a low threshold current density of 1.3 kA/cm/sup 2/, and the coupling coefficient is estimated to he approximately 100 cm/sup -1/. In addition, high-power surface emission (over 6 mW) is demonstrated due to the large difference between the refractive index of air and that of InP. These results indicate the feasibility of applying wafer fusion techniques to form submicrometer structures in semiconductors, and several other applications are expected.

  • Terabit/second transmission experiments

    This paper discusses the reasons for the recent acceleration in the exponential growth rate of single-fiber transmission capacity. The various transmission experiments with capacities of 1 Tb/s and greater are reviewed.

  • 1.3-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m 4<formula formulatype="inline"><tex Notation="TeX">$\,\times\,$</tex></formula>25-Gb/s Monolithically Integrated Light Source for Metro Area 100-Gb/s Ethernet

    A 1.3- monolithically integrated light source for metro area 100-Gb/s Ethernet is developed. Four 25-Gb/s electroabsorption modulators integrated with distributed-feedback lasers and their multiplexer are monolithically integrated on one chip. A shallow ridge waveguide is used for lasers and modulators for large modulation bandwidth, and a deep ridge waveguide is used for the multiplexer region due to its low bending and radiation losses. The integration of hetero-waveguide devices enables the very small chip size of 22.6 . With the device, 100-Gb/s (4 25-Gb/s simultaneous) operation is demonstrated with the clear eye-openings, and error-free 40-km single-mode fiber transmission is achieved for the first time.

  • Curved-grating, surface-emitting distributed feedback lasers

    Surface-emitting distributed feedback (SE-DFB) lasers have a gold-coated grating on the p-contact surface that provides feedback and diffracts guided- mode radiation into the surface normal. To date, broad-area SE-DFB devices have produced as much as nine watts cw output power and 27 percent total "wall-plug" efficiency under continuous wave operating conditions. Grating chirp has been shown to improve the output efficiency as well as produce nearly diffraction-limited beam quality along the longitudinal direction. However, the lateral beam quality of broad area SE-DFB laser has been poor due to multi-mode operation and filamentation.

  • Threshold current, differential gain, and relaxation resonance frequency of 1.55-/spl mu/m bulk and MQW DFB laser diodes

    We investigate threshold currents, differential gains, and relaxation resonance frequencies of 1.55-/spl mu/m bulk and nine-well multiple-quantum- well (MQW) distributed feedback (DFB) laser diodes (LDs) experimentally and theoretically. The experimentally obtained threshold current (I/sub th/), differential gain (dg/dN), and relaxation resonance frequency per square root of output power (fr/(P)/sup 1/2/) of the 1.55-/spl mu/m bulk DFB LD are 19 mA, 2.4/spl times/10/sup -16/ cm/sup 2/, and 3.2 GHz/mW/sup 1/2/, which nearly agree with the calculated I/sub th/ of 21.6 mA, dg/dN of 3.1/spl times/10/sup -16/ cm/sup 2/, and fr/(P)/sup 1/2/ of 3.6 GHz/mW/sup 1/2/, respectively. The experimentally obtained I/sub th/, dg/dN, and fr/(P)/sup 1/2/ of the 1.55-/spl mu/m InGaAs MQW DFB LD with barriers (/spl lambda/g=1.3 /spl mu/m) are 9 mA, 6.0/spl times/10/sup -16/ cm/sup 2/, and 4.6 GHz/mW/sup 1/2/ compared with the calculated I/sub th/ of 7.8 mA, dg/dN of 4.0/spl times/10/sup -16/ cm/sup 2/, and fr/(P)/sup 1/2/ of 3.7 GHz/mW/sup 1/2/, respectively. However, the experimentally obtained I/sub th/, dg/dN, and fr/(P)/sup 1/2/ of the 1.55-/spl mu/m InGaAs MQW DFB LD with barriers (/spl lambda/g=1.15 /spl mu/m) are 20 mA, 2.6/spl times/10/sup -16/ cm/sup 2/, and 2.85 GHz/mW/sup 1/2/, which greatly disagree with the calculated I/sub th/, of 4.9 mA, dg/dN of 6.0/spl times/10/sup -16/ cm/sup 2/, and fr/(P)/sup 1/2/ of 4.3 GHz/mW/sup 1/2/, respectively. Taking into account the nonuniform hole distribution among nine wells, which is attributed to the valence band discontinuity, /spl Delta/E/spl upsi/ (the separation between the first quantized hole level in the well and the top energy of the valence band for the barrier), the corrected I/sub th/ and dg/dN of the 1.55-/spl mu/m MQW DFB LD with /spl lambda/g of 1.15 /spl mu/m are 18.3 mA and 2.2/spl times/10/sup -16/ cm/sup 2/, which fairly agree with the above measured values. By p-type doping to 1.5/spl times/10/sup 18/ cm/sup -3/ into the wells to improve the nonuniform distribution of holes among nine wells, I/sub th/, dg/dN, and fr/(P)/sup 1/2/ of the 1.55-/spl mu/m MQW DFB LD with /spl lambda/g of 1.15 /spl mu/m can be expected to be 3.7 mA, 8.8/spl times/10/sup -16/ cm/sup 2/, and 5.4 GHz/mW/sup 1/2/, respectively.

  • Improved wavelength trimming of distributed-feedback lasers using very narrow multiple quantum wells

    We succeeded in wavelength trimming DFB lasers over a 0.44-nm spectral range toward long wavelengths. This improved spectral range is made possible by using narrow 2.7 nm multiple quantum well active region. We fabricated DFB lasers that have active layers consisting of fifteen compressively-strained InGaAs quantum wells. The wells are 2.7-nm wide and are separated by 1O-nm InGaAsP barriers. The SCH structure was grown on an n-type InP substrate by low pressure metal organic vapor phase epitaxy.

  • Effect of residual facet reflectivity on the front-rear correlation and nonlinearity of L-I characteristics in quarter-wavelength-shifted DFB lasers

    Combined effects of residual facet reflection and spatial hole-burning on the front-rear correlation and nonlinearity in L-I characteristics of quarter- wavelength-shifted DFB lasers have been studied by using an effective index transfer matrix method and rate equations. Changes in front-to-rear power ratio, caused by the spatial hole-burning and asymmetric facet-reflection due to the different grating end phases at the two facets, are shown to be responsible for both the correlation and the linearity problems, while the threshold gain change causes the linearity problem only. The problems are serious even in the cases of low facet reflectivity of 0.3%.



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