Conferences related to Distributed amplifiers

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2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


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Periodicals related to Distributed amplifiers

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Broadcasting, IEEE Transactions on

Broadcast technology, including devices, equipment, techniques, and systems related to broadcast technology, including the production, distribution, transmission, and propagation aspects.


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


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Most published Xplore authors for Distributed amplifiers

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Xplore Articles related to Distributed amplifiers

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Wideband microwave/millimeter-wave solid-state amplifiers

1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1983

Rapid strides have been made in recent years in the design and development of ultra-wideband solid-state amplifiers. A variety of design approaches based on GaAs FET and silicon bipolar technologies have been proposed. These include, among others, balanced amplifiers with couplers, reactive and resistive gain compensated circuits, feedback amplifiers, and traveling wave or distributed amplifiers . . . Panelists will ...


Wideband transistor distributed amplifiers

1959 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1959

None


Design Tradeoffs For Very Short Cascade Systems For CATV

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels, 1992

None


ESPRIT VLSI Design Skills Training Action

ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference, 1989

Within ESPRIT Basic Research Actions the Commission of the European Communities has set up a special initiative to provide on a European scale: access for academic institutions to industrial processing facilities and enhancement of academic capacity to train engineer in VLSI design.


170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2014

This paper presents a travelling-wave amplifier (TWA) for wideband applications implemented in a 0.13 μm SiGe BiCMOS technology (ft = 300 GHz, fmax = 500 GHz). The gain cell employed in the TWA is designed to compensate the transmission-line- losses at high frequencies in order to extend the bandwidth as well as the gain bandwidth product (GBP). A gain of ...


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Educational Resources on Distributed amplifiers

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IEEE.tv Videos

CASS Lecture by Dr. Chris Hull, "Millimeter-Wave Power Amplifiers in FinFET Technology"
IMS 2012 Microapps - Optimizing the Design and Verification of 4G RF Power Amplifiers
IMS 2011 Microapps - Power Amplifier Design Utilizing the NVNA and X-Parameters
IMS 2012 Special Sessions: The Evolution of Some Key Active and Passive Microwave Components - K. R. Varian
IMS 2012 Special Sessions: The Evolution of Some Key Active and Passive Microwave Components - E. C. Niehenke
IMS 2015: Allen Katz - The Evolution of Linearizers for High Power Amplifiers
Multiple Sensor Fault Detection and Isolation in Complex Distributed Dynamical Systems
Envelope Tracking and Energy Recovery Concepts for RF Switch-mode Power Amplifiers
IMS MicroApps: AWR's iFilter
Intermodulation Distortion Mitigation in Microwave Amplifiers and Frequency Converters
IMS 2014: Broadband Continuous-mode Power Amplifiers
APEC Speaker Highlights: Ron Van Dell
Design of Monolithic Silicon-Based Envelope-Tracking Power Amplifiers for Broadband Wireless Applications
RF Induced Communication Errors in RFFE MIPI Controlled Power Amplifiers: RFIC Interactive Forum
Design Considerations for Wideband Envelope Tracking Power Amplifiers
Envelope Time-Domain Characterizations to Assess In-Band Linearity Performances of Pre-Matched MASMOS Power Amplifier: RFIC Interactive Forum 2017
IEEE Day Future Milestones: 100% Renewable Energy penetration Is Possible
Micro-Apps 2013: Class F Power Amplifier Design, Including System-to-Circuit-to-EM Simulation
Yahoo's Raghu Ramakrishnan Discusses CAP and Cloud Data Management
Cloud Standardization: A View from IEEE Cloud Congress @ GlobeCom 2012

IEEE-USA E-Books

  • Wideband microwave/millimeter-wave solid-state amplifiers

    Rapid strides have been made in recent years in the design and development of ultra-wideband solid-state amplifiers. A variety of design approaches based on GaAs FET and silicon bipolar technologies have been proposed. These include, among others, balanced amplifiers with couplers, reactive and resistive gain compensated circuits, feedback amplifiers, and traveling wave or distributed amplifiers . . . Panelists will discuss the attributes of these various design approaches and technologies, with respect to electrical performance, compatibility with the hybrid and monolithic approaches, cost, applicability to military, commercial and consumer markets, among others.

  • Wideband transistor distributed amplifiers

    None

  • Design Tradeoffs For Very Short Cascade Systems For CATV

    None

  • ESPRIT VLSI Design Skills Training Action

    Within ESPRIT Basic Research Actions the Commission of the European Communities has set up a special initiative to provide on a European scale: access for academic institutions to industrial processing facilities and enhancement of academic capacity to train engineer in VLSI design.

  • 170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier

    This paper presents a travelling-wave amplifier (TWA) for wideband applications implemented in a 0.13 μm SiGe BiCMOS technology (ft = 300 GHz, fmax = 500 GHz). The gain cell employed in the TWA is designed to compensate the transmission-line- losses at high frequencies in order to extend the bandwidth as well as the gain bandwidth product (GBP). A gain of 10 dB and a 3-dB bandwidth of 170 GHz are measured for the fabricated TWA. The chip has a chip area of 0.38 mm2and a power consumption of 108 mW. Compared against the state of the art, the presented design achieves the highest reported GBP per area and power consumption.

  • A novel MMIC area efficient method for bias stabilising HBT based distributed amplifiers whilst maintaining low frequency gain

    In this paper we introduce a novel technique for achieving DC bias stabilisation of Heterojunction Bipolar Transistor (HBT) based distributed amplifiers whilst maintaining low frequency gain, without the use of large emitter decoupling capacitors. Equations are presented which show the underlying principles and limitations of the new technique. In addition, simulation results are given which demonstrate its effectiveness when compared to a frequently used conventional method.

  • A new 5 and 10 MHz high isolation distribution amplifier

    Increasing performance demands timing have made NIST's present amplifier system obsolete. A new design providing improved phase stability with temperature, harmonic purity, and phase noise is presented. By building on previous designs, a modified cascode amplifier was created with performance increases of more than 10 fold in phase noise, temperature coefficient and isolation. An input-output isolation of 140 dB and channel to channel isolation of greater than 125 dB was achieved. Phase noise performance of -152 dBc/Hz at 1 Hz with a noise floor of -170 dBc/Hz was also achieved. Input and output matching provide average return losses greater 30 dB. Harmonics are all -45 dBc or better at an output of +13 dBm and the temperature coefficient of output phase is less then 1 ps//spl deg/C.<<ETX>>

  • A 12.5 GHz RF matrix amplifier in 180nm SOI CMOS

    The design and implementation of an RF broadband amplifier in 180nm SOI CMOS is described. Using a parasitic-aware design and optimization methodology based on particle swarm optimization techniques, the RF matrix amplifier achieves a 15.1 dB forward gain (S/sub 21/) over a 12.5GHz bandwidth. It dissipates 233mW.

  • Single and double distributed optical amplifier fiber bus networks with wavelength division multiplexing for photonic sensors

    This paper presents numerical simulations of single and dual fiber bus networks with distributed amplification, which are used for the wavelength division multiplexing of photonic sensors. The model upon which the simulations are based has been compared to a previously published experimental result and good agreement has been obtained. A novel technique for allocating the signal wavelength to the sensor position in order to equalize the received signal power is also discussed.

  • Gain limitations in narrow width Josephson junction vortex flow transistors

    The number of devices required to achieve a practical gain from a Josephson junction vortex flow transistor (JVFT) distributed amplifier is inversely proportional to the gain or the transresistance, r/sub m/ of each active device. A large number of devices means longer transmission line lengths associated with increased loss and size. Reducing the junction width results in increased r/sub m/, however there is a fundamental limit for achievable r/sub m/. This is basically due to two reasons, increased fringing field effects and edge penetration at smaller aspect ratios. Field analyses made on devices with various dimensions show this limitation in the magnitude of r/sub m/ for narrower junctions. The analysis also provides valuable information on parasitic elements in the circuit model for a JVFT. Results of the analyses on devices having different geometries suitable for high frequency operation are presented.<<ETX>>



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