Conferences related to Dielectric thin films

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2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


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Periodicals related to Dielectric thin films

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


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Most published Xplore authors for Dielectric thin films

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Xplore Articles related to Dielectric thin films

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Technology '89: solid state

IEEE Spectrum, 1989

Developments in solid-state technology during 1988 are discussed. The pace was set by memory integrated circuits, with the proliferation of flash E/sup 2/PROMs (electrically erasable programmable read-only memories) and the announcement of prototype 16 Mb dynamic RAMs (random-access memories). Analog integrated circuitry continued its mild renaissance, as methods of combining analog and digital devices on the same chip where further ...


A 3.0-6.5 GHz YIG-tuned transistor oscillator/amplifier

1971 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1971

The availability of new microwave transistors with an fma, in excess of 11 GHz makes it feasible to design oscillator/amplifiers in the C-Band. region. The accurate highfrequency characterization of those transistors by their scattering matrix and the use of optimization methods account for best performance. High-Q single crystal ferrimagnetic garnets provide linear tuning and broadband coverage. Finally, hybrid thin-film techniques ...


Thin film devices

2009 Device Research Conference, 2009

None


On the optimization of silicon film thickness in thin-film SOI devices

IEEE SOS/SOI Technology Conference, 1989

Summary form only given. It is shown that in order to obtain fully depleted SOI MOSFETs with suitable values of threshold voltage (around 0.6 V for the n-channel device), a silicon film thickness smaller than 100 nm must be used. 70 nm should be sufficiently thin. This observation is quite independent of the magnitude of (fixed) oxide charge densities, although ...


Interfacial Effects in Organic Field-Effect Transistors

2005 Pacific Rim Conference on Lasers & Electro-Optics, 2005

None


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Educational Resources on Dielectric thin films

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IEEE.tv Videos

IEEE Magnetics Distinguished Lecture - Mitsuteru Inoue
Perpendicular magnetic anisotropy: From ultralow power spintronics to cancer therapy
The Josephson Effect: The Original SQUIDs
35 Years of Magnetic Heterostructures
Nanotechnology For Electrical Engineers
Micro-Apps 2013: Determining Circuit Material Dielectric Constant from Phase Measurements
IMS 2011 Microapps - Understanding the Proper Dielectric Constant of High Frequency Laminates to Be Used for Circuit Modeling and Design
IMS 2011 Microapps - The Design and Test of Broadband Launches Up to 50GHz on Thin and Thick Substrates
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 1 of 7 - Gordon Donaldson: A Memory - part I - John Clarke
Magnetics + Mechanics + Nanoscale = Electromagnetics Future - Greg P. Carman: IEEE Magnetics Distinguished Lecture 2016
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 2 of 7 - Gordon Donaldson: A Memory - part II - Colin Pegrum
2011 IEEE Jun-ichi Nishizawa Medal - Bernard J. Lechner, T. Peter Brody and Fang-Chen Luo
The Josephson Effect: The Observations of Josephson's Effects
Fast Scale Prototyping for Folded Millirobots
ITRI: Technology Advances in Flexible Displays and Substrates
IMS 2014: LNA Modules for the WR4 (170-260 GHz) Frequency Range
Prosthetic Hand Restores Amputee's Sense of Touch - IEEE Spectrum Report
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
International Broadcast Conference(IBC) News: Segment 4
Testing My New Robot Body

IEEE-USA E-Books

  • Technology '89: solid state

    Developments in solid-state technology during 1988 are discussed. The pace was set by memory integrated circuits, with the proliferation of flash E/sup 2/PROMs (electrically erasable programmable read-only memories) and the announcement of prototype 16 Mb dynamic RAMs (random-access memories). Analog integrated circuitry continued its mild renaissance, as methods of combining analog and digital devices on the same chip where further explored and refined. Chip makers continued to find paths around roadblocks to high integration, breaching the 1- mu m barrier. On the business front, the semiconductor market was more profitable than it has been in some time, and there were a number of significant mergers, and international competition continued to be tense.<<ETX>>

  • A 3.0-6.5 GHz YIG-tuned transistor oscillator/amplifier

    The availability of new microwave transistors with an fma, in excess of 11 GHz makes it feasible to design oscillator/amplifiers in the C-Band. region. The accurate highfrequency characterization of those transistors by their scattering matrix and the use of optimization methods account for best performance. High-Q single crystal ferrimagnetic garnets provide linear tuning and broadband coverage. Finally, hybrid thin-film techniques on high dielectric sapphire substrate keep the parasitic at a minimum and account for an optimum blend of the various elements.

  • Thin film devices

    None

  • On the optimization of silicon film thickness in thin-film SOI devices

    Summary form only given. It is shown that in order to obtain fully depleted SOI MOSFETs with suitable values of threshold voltage (around 0.6 V for the n-channel device), a silicon film thickness smaller than 100 nm must be used. 70 nm should be sufficiently thin. This observation is quite independent of the magnitude of (fixed) oxide charge densities, although the absolute value of the threshold voltage is greatly influenced by the density charges. The subthreshold slope of p-channel devices is much less sensitive to film thickness and always shows values lower than 75 mV/dec, provided the silicon film is thin enough to allow for full depletion of the device of the OFF state.<<ETX>>

  • Interfacial Effects in Organic Field-Effect Transistors

    None

  • Control of selective and blanket ruthenium film deposition chemistry in supercritical CO/sub 2/ fluid chemical deposition

    None

  • Laser-induced microwave index gratings in thin-film superconductors

    None

  • The studies of thin film coatings on the surface of porous silicon

    Summary form only given. The complex of surface and subsurface sensitive methods: Auger electron spectroscopy (AES), thermostimulated exoelectron emission (TSEE), mass-spectrometry (MS), ellipsometry and low-frequency dielectric spectroscopy (LFDS) have been applied to investigation of the thin films' coatings, which play a significant role in photo- (PL) and electroluminescence (EL) of por-Si/Si heterostructures.

  • Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications

    None

  • A novel integrated decoupling capacitor for MCM-L technology

    This paper discusses the design, materials, fabrication, and measurements of a novel integrated decoupling capacitor for MCM-L-based substrates, Based on modeling using the Semiconductor Industry Association Roadmap, it has been estimated that 13-72 nF/cm/sup 2/ of specific decoupling capacitance will be required for the next decade, The capacitor in this paper addresses this need. The fabrication of the capacitor has been achieved using filled polymer materials in thin film form, with via diameters of 100 /spl mu/m and below, through photodefinable processes. Dielectric constant as high as 65 with loss tangent below 0.05 and specific capacitance of 22 nF/cm/sup 2/ have been achieved. The scattering parameters were measured up to 20 GHz using a network analyzer for various capacitor structures (varying geometry and dielectric thickness) to study input impedance and scaling of the devices.



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