Conferences related to Dark current

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2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 IEEE International Symposium on Circuits and Systems (ISCAS)

The International Symposium on Circuits and Systems (ISCAS) is the flagship conference of the IEEE Circuits and Systems (CAS) Society and the world’s premier networking and exchange forum for researchers in the highly active fields of theory, design and implementation of circuits and systems. ISCAS2020 focuses on the deployment of CASS knowledge towards Society Grand Challenges and highlights the strong foundation in methodology and the integration of multidisciplinary approaches which are the distinctive features of CAS contributions. The worldwide CAS community is exploiting such CASS knowledge to change the way in which devices and circuits are understood, optimized, and leveraged in a variety of systems and applications.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


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Periodicals related to Dark current

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


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Most published Xplore authors for Dark current

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Xplore Articles related to Dark current

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An integrating digital lightmeter

1966 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1966

None


An NPN structure 484 × 384 MOS imager for a single-chip color camera

1979 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1979

An MOS imager featuring an NPN structure for anti blooming and built-in double video lines for color signal pickup will be described. Imager is used in single-chip color camera with TV resolution.


Noise Principles in Optical Fiber Communication

Noise and Signal Interference in Optical Fiber Transmission Systems: An Optimum Design Approach, None

This chapter contains sections titled:IntroductionReceiver Thermal NoiseDark Shot NoiseSignal Shot NoiseMultiplication Shot NoiseOptical Amplification and Beat NoisesOptical Noise and CoherenceRelative Intensity NoiseMode Partition NoiseModal NoiseReflection NoisePolarization Noise in Multimode FibersReferences


Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to γ-irradiation

ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007

In this paper, a model for the spectral response of 4-T (4-Transistor) CMOS image sensors in deep-submicron technology is developed to study the sensor's sensitivity towards gamma-ray irradiation. It is found that the spectral degradation due to gamma-rays is mainly through changes in the top-layer material characteristics and Si/SiO2interface. There is a non-trivial contribution of STI (shallow trench isolations) towards ...


Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

IEEE Electron Device Letters, 2014

Conventional InP/InGaAs/InP heterostructure p-i-n photodiodes (PIN-PDs) are usually fabricated by postgrowth Zn diffusion to form the p-type region. In this letter, we propose a novel method to fabricate the high performance of largearea planar InP/InGaAs/InP PIN-PDs with Mg driven-in process. The Mg driven-in is implemented by spin-on dopant technique using magnesium-silica- film (MgSiOx) source and through the rapid thermal diffusion. ...


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Educational Resources on Dark current

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IEEE-USA E-Books

  • An integrating digital lightmeter

    None

  • An NPN structure 484 × 384 MOS imager for a single-chip color camera

    An MOS imager featuring an NPN structure for anti blooming and built-in double video lines for color signal pickup will be described. Imager is used in single-chip color camera with TV resolution.

  • Noise Principles in Optical Fiber Communication

    This chapter contains sections titled:IntroductionReceiver Thermal NoiseDark Shot NoiseSignal Shot NoiseMultiplication Shot NoiseOptical Amplification and Beat NoisesOptical Noise and CoherenceRelative Intensity NoiseMode Partition NoiseModal NoiseReflection NoisePolarization Noise in Multimode FibersReferences

  • Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to γ-irradiation

    In this paper, a model for the spectral response of 4-T (4-Transistor) CMOS image sensors in deep-submicron technology is developed to study the sensor's sensitivity towards gamma-ray irradiation. It is found that the spectral degradation due to gamma-rays is mainly through changes in the top-layer material characteristics and Si/SiO2interface. There is a non-trivial contribution of STI (shallow trench isolations) towards the dark current of the sensor, and it turns out to be highly sensitive to radiation damage.

  • Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

    Conventional InP/InGaAs/InP heterostructure p-i-n photodiodes (PIN-PDs) are usually fabricated by postgrowth Zn diffusion to form the p-type region. In this letter, we propose a novel method to fabricate the high performance of largearea planar InP/InGaAs/InP PIN-PDs with Mg driven-in process. The Mg driven-in is implemented by spin-on dopant technique using magnesium-silica- film (MgSiOx) source and through the rapid thermal diffusion. The preparation of MgSiOxsource carrier as the p-type dopant for InP/InGaAs heterostructure is more time-saving than that of zinc-phosphorous-dopant-coating because the latter needs an additional step of oxygen (O2) plasma to remove a thick resin layer. To improve the responsivity of vertically illuminated PDs, Si/Al2O3bilayers are deposited as the antireflective coating. The 800-μm- diameter PD with Mg driven-in exhibits a low dark current of 20 pA (or 4 nA/cm2) at -10 mV, a high responsivity of 1.14 A/W at 1550-nm wavelength, an excellent quantum efficiency of 91%, and a good uniformity in the light received area. These characteristics are comparable to those of the PD with Zn driven-in.

  • Multiplier Phototubes for the Far Ultraviolet

    A new group of extreme solar-blind multiplier phototubes with cleaved lithium fluoride windows consisting of: end-on tubes with 28 mm active diameter cesium iodide (542G-08) and potassium bromide (542J-08) photocathode; 10 mm active diameter cesium iodide (541G-08) and copper iodide (541H-08) photocathodes; and a side-window tube with a cesium iodide reflective photocathode (641G-08), are described. The spectral responses have characteristic long wavelength cut- offs which serve as an efficient means of rejecting the scattered long- wavelength radiation in dispersive systems. The tubes have anode dark currents at room temperature equivalent to approximately one photoelectron per second. The count rate in the dark of cathode-originating electrons is 10-20 counts per minute. The pulse height distribution from a 541G-08 illuminated with low- level ultraviolet shows an exponential form down to a small fraction (1/25) of the average single electron pulse height. The highly ruggedized tubes are designed for the rigors of space applications.

  • Gated Geiger mode operation and after pulse probability measurement of the InAlAs APD

    To investigate the after pulse process and the device design for after pulse reduction, we fabricated an InAlAs-APD with two-step mesa structure. We report the after pulse probability for the InAlAs multiplication layer for the first time.

  • Decreasing dark current in long wavelength InAs/GaSb thermophotovoltaics via bandgap engineering

    At present, the state of the art thermophotovoltaic diode material is GaSb, with a bandgap of 0.7 eV corresponding to source temperatures greater than 1000°C. We investigate alternative bandstructure designs using the InAs/GaSb superlattice material system, which enable shorter bandgaps corresponding to lower source temperatures. For an InAs/GaSb superlattice system, we examine the effect of a monovalent barrier inserted between the p and n-doped regions. Through simulations, with the program Silvaco, we demonstrate that this barrier decreases the dark current and increases the open-circuit voltage, improving the overall power output and, thus, extending the operational wavelength of thermophotovoltaics.

  • High-speed InGaAs-based vertical Schottky barrier photodetectors

    In this work, we report on the design, fabrication, and characterization of an InGaAs-based vertical Schottky barrier (VSB) photodetector that uses a lattice-matched n/sup -/-InAlAs Schottky barrier height enhancement layer in conjunction with a 320 nm-thick film of ITO to form a high quality transparent Schottky contact. The Schottky barrier height of ITO on n/sup -/-InAlAs was determined to be 0.68 eV through the use of Norde plots and I-V measurements. The thin film of ITO and the device passivation layer of silicon nitride, together, form an odd-multiple quarter-wave transformer to 1.31 /spl mu/m perpendicularly incident light. The devices exhibited very low dark current densities, high responsivities, and high 3-dB bandwidths. A dark current per unit area of 8.87 /spl middot/10/sup -5/ A/cm/sup -2/ at an applied bias of 5 V was obtained. The responsivity for all the devices tested ranged from 0.55 to 0.59 A/W at a wavelength of 1.31 /spl mu/m. The 15 /spl mu/m diameter devices exhibited 3-dB bandwidths of 19 and 25 GHz in response to 1.55 /spl mu/m illumination with an applied bias of 5 and 10 V, respectively.

  • A low dark current, high-speed GaAs/Al/sub 0.3/Ga/sub 0.7/As heterostructure Schottky barrier photodiode

    A high-speed and high-sensitivity planar GaAs/Al0.3Ga0.7As heterostructure Schottky barrier photodiode is discussed. Using a highly doped Al0.3Ga0.7As buffer layer between the active layer and semi-insulating GaAs substrate, the series resistance and the undesired diffusion tailing are greatly reduced. Studies of surface stabilization and antireflection coating, performed to reduce the reverse-bias dark current and the reflection loss, resulted in significant improvement in the sensitivity of the photodiode. The measured internal quantum efficiency and responsivity are 60-77% and 0.47-0.6 A/W, respectively, for the wavelength range of 0.5-0.84 μm. A risetime of 8.5 ps and an FWHM of 16 ps were measured by using a sampling/correlation method.



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