Conferences related to Damascene integration

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2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

This is a set of five conferences with a focus on wireless components, applications and systems that affect both now and our future lifestyle. The main niche of these conferences is to bring together technologists, circuit designers, system designers and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems. This is also an area where today's design compromises can trigger tomorrow's advanced technologies, where dreams can become a reality.


2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

EDSSC provides as a multidisciplinary forum for the exchange of ideas, research results, and industry experience in the broad areas of electron devices and solid state circuits and systems. The technical program includes invited talks by famous scientists and contributed papers.


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Periodicals related to Damascene integration

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.


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Most published Xplore authors for Damascene integration

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Xplore Articles related to Damascene integration

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Process optimisation and dual damascene integration of porous CVD SiOC dielectric at 2.4 and 2.2 k-values for 45 nm CMOS technology

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004

Dual damascene integration of porous CVD SiOC low-k material was performed for interconnects of the 65 and 45 nm technology nodes. Deposition processes with dielectric constant of 2.4 and 2.2 were developed and characterized. Low-k integration was performed with feature sizes down to 85 nm. Etch and strip processes compatible with this ultra low-k investigated and lead to the successful ...


Lithography as a critical step for low-k dual damascene: from 248 nm to 193 nm

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407), 2000

Optical lithography is continuously pushed to its limits for volume manufacturing of integrated circuits. With the implementation of low-k dielectrics in the back-end-of-line processes, the optical properties of the dielectric stack have drastically changed. Also the transition from the conventional AlCu dry-etch scheme to several potential damascene integration schemes has significant impact on the lithography process and should be taken ...


Single and dual damascene integration of a spin-on porous ultra low-k material

Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461), 2001

For future high performance logic semiconductor products it is essential to lower the dielectric constant k of the intra- and interlayer isolators in combination with Cu single and dual damascene metallisation. In this paper we report on the first successful single and dual damascene integration of a porous methylsilsesquioxane based spin-on dielectric, JSR LKD. Deposition, etch, resist strip, clean and ...


Spin-on dielectric stack low-k integration with EB curing technology for 45nm-node and beyond

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004

To achieve effective k value less than 3.0, we investigated spin-on dielectric stack damascene integration scheme with electron beam (EM) cure. By using porous-MSQ (k=2.3) as ILD and dense-MSQ (k=2.9) as hard mask (HM), effective k value could be lowered, and by EB curing the full dielectric stack only once, mechanical strength for both ILD and HM were improved and ...


Integration of copper and fluorosilicate glass for 0.18 /spl mu/m interconnections

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407), 2000

The integration of dual damascene copper with fluorosilicate glass (FSC) at the 0.18 /spl mu/m technology node is described. The BEOL structure has been implemented for an advanced CMOS technology, and along with an SOI FEOL is being used for high performance logic and SRAM devices. Reliability and yield is shown to be equivalent to a similar technology without FSG. ...


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Educational Resources on Damascene integration

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IEEE.tv Videos

Robotics History: Narratives and Networks Oral Histories:Herman Bruyninckx
Heterogeneous Integration Roadmap
Grid Integration Systems and Mobility with Keynote Sila Kiliccote - IEEE WIE ILC 2017
Dr. Bernd Kosch on Industrie 4.0 and manufacturing - WF-IoT 2015
EMBC 2011-Speaker Highlights-Ron Newbower, PhD
28nm CMOS Wireless Connectivity Combo IC - Chia-Hsin Wu - RFIC Showcase 2018
IRDS: More Moore Outbrief - Mustafa Badaroglu at INC 2019
KeyTalk with Ljubisa Stevanovic: From SiC MOSFET Devices to MW-scale Power Converters - APEC 2017
Nanophotonic Devices for Quantum Information Processing: Optical Computing - Carsten Schuck at INC 2019
Kostas Kontogiannis: IoT Systems Delivery and Deployment Agility - Research Challenges and Issues: WF IoT 2016
3D Printing for Sensor Platform Integration - Benjamin Ingis - IEEE EMBS at NIH, 2019
Advanced Packaging and Energy as Integration to Reboot Computing: IEEE Rebooting Computing 2017
Levente Klein: Drone-based Reconstruction for 3D Geospatial Data Processing: WF-IoT 2016
Security for SDN/NFV and 5G Networks - Ashutosh Dutta - India Mobile Congress, 2018
Q&A with Mustafa Badaroglu: IEEE Rebooting Computing Podcast, Episode 21
Technology for Health Summit 2017 - Welcome & Summit Opening
Toward Cognitive Integration of Prosthetic Devices - IEEE WCCI 2014
CASS Lecture by Dr. Chris Hull, "Millimeter-Wave Power Amplifiers in FinFET Technology"
Merge Network for a Non-Von Neumann Accumulate Accelerator in a 3D Chip - Anirudh Jain - ICRC 2018
A Historical Perspective on Computational Intelligence in N-player Games - IEEE WCCI 2014

IEEE-USA E-Books

  • Process optimisation and dual damascene integration of porous CVD SiOC dielectric at 2.4 and 2.2 k-values for 45 nm CMOS technology

    Dual damascene integration of porous CVD SiOC low-k material was performed for interconnects of the 65 and 45 nm technology nodes. Deposition processes with dielectric constant of 2.4 and 2.2 were developed and characterized. Low-k integration was performed with feature sizes down to 85 nm. Etch and strip processes compatible with this ultra low-k investigated and lead to the successful dual damascene integration, illustrated by physical and electrical results such as low leakage current, via chain and line resistances. The k-value after integration was preserved at its initial value.

  • Lithography as a critical step for low-k dual damascene: from 248 nm to 193 nm

    Optical lithography is continuously pushed to its limits for volume manufacturing of integrated circuits. With the implementation of low-k dielectrics in the back-end-of-line processes, the optical properties of the dielectric stack have drastically changed. Also the transition from the conventional AlCu dry-etch scheme to several potential damascene integration schemes has significant impact on the lithography process and should be taken into account. Usually front-end-of-line development is considered as the driving force for lithography. However back-end lithography has become as challenging recently. In this paper, the various issues for back-end damascene lithography processes for the 0.13 um technology node will be outlined. The IMEC strategy for back-end-of-line lithography solutions will be outlined, for both 248 nm and 193 nm lithography.

  • Single and dual damascene integration of a spin-on porous ultra low-k material

    For future high performance logic semiconductor products it is essential to lower the dielectric constant k of the intra- and interlayer isolators in combination with Cu single and dual damascene metallisation. In this paper we report on the first successful single and dual damascene integration of a porous methylsilsesquioxane based spin-on dielectric, JSR LKD. Deposition, etch, resist strip, clean and CMP behaviour and electrical results from both single and dual damascene integration are discussed.

  • Spin-on dielectric stack low-k integration with EB curing technology for 45nm-node and beyond

    To achieve effective k value less than 3.0, we investigated spin-on dielectric stack damascene integration scheme with electron beam (EM) cure. By using porous-MSQ (k=2.3) as ILD and dense-MSQ (k=2.9) as hard mask (HM), effective k value could be lowered, and by EB curing the full dielectric stack only once, mechanical strength for both ILD and HM were improved and a reduced thermal budget was obtained. In addition, a low damage resist strip process for the low-k materials was evaluated. These elements of BEOL technology have applicability to 45nm technology node and beyond.

  • Integration of copper and fluorosilicate glass for 0.18 /spl mu/m interconnections

    The integration of dual damascene copper with fluorosilicate glass (FSC) at the 0.18 /spl mu/m technology node is described. The BEOL structure has been implemented for an advanced CMOS technology, and along with an SOI FEOL is being used for high performance logic and SRAM devices. Reliability and yield is shown to be equivalent to a similar technology without FSG. Key considerations in the development of this technology are presented.

  • Advanced 300 mm Cu/CVD LK (k=2.2) multilevel damascene integration for 90/65 nm generation BEOL interconnect technologies

    Nine-metal-level (9 ML) Cu/CVD low-k dielectric with k=2.2, Cu/LK (k=2.2), damascene integration on 300 mm wafers for 90/65 nm generation has been successfully demonstrated for the first time. To minimize line-line capacitance for least BEOL interconnect RC delay, no higher-k cap for Cu CMP or higher-k middle etch stop layers for metal trench etching were used in inter metal dielectric (IMD) film stacking. Integration challenges in the Cu/LK (k=2.2) damascene building were overcome by novel approaches in IMD film processing, Cu CMP and patterning. Excellent physical, electrical, reliability, and packaging results from this Cu/LK (k=2.2) BEOL interconnects are demonstrated.

  • Copper dual damascene integration using organic low k material: construction architecture comparison

    This paper presents three integration schemes of copper with a pure organic low k material (SiLK/sup TM/, Dow Chemical Co., k=2.8). We will compare two trench first architectures, leading to a self or not self aligned structure, with the more conventional self aligned "Via First at Via Level" structure. The limitations of the self aligned structures are discussed by comparison with results obtained with SiO2.

  • Comprehensive study of 32 nm node ultralow-k/Cu (keff=2.6) dual damascene integration featuring short TAT silylated porous silica (k=2.1)

    A comprehensive study of low-k/Cu integration featuring short TAT (turnaround time) silylated scalable porous silica (Po-SiO, k=2.1) with high porosity (50%) is presented. The TAT for silylation is about 25% reduced by adding a promoter, causing reinforcement of the film. Applying this improved Po-SiO, 140 nm pitch dual damascene structure is successfully achieved. The wiring capacitance showed 10% reduction compared with the conventional porous SiOC (ULK, k=2.65). Sufficient interconnect reliability and packaging characteristics for circuit-under-pad structure are also obtained. The predicted circuit-performance was 8% higher than ULK in 32 nm node.

  • IITC 2018 Keynote Title CMOS/Cu BEOL Technology in Manufacturing: 20 Years and C

    Provides an abstract of the keynote presentation and may include a brief professional biography of the presenter. The complete presentation was not made available for publication as part of the conference proceedings.

  • A 90 nm generation copper dual damascene technology with ALD TaN barrier

    As the device dimension continues to shrink, the need for a thinner barrier for copper has risen in order to meet the requirements for future device performance. The conventional barrier process by physical vapor deposition (PVD) has the limitation to achieve conformal step coverage across the dual damascene structure , and therefore would face a bottleneck when the thickness reduction is required. In this work, the atomic layer deposition (ALD) technique is applied for the TaN barrier process of a 90 nm generation copper dual damascene integration with low-k dielectrics of k=3.0. The ALD technique could not only provide a conformal step coverage on both trenches and vias, it could also allows reasonable thickness control for thickness of the order of 10 /spl Aring/. The integration results show that ALD TaN has promising electrical performance on sheet resistance, via resistance, and line-to-line leakage, and it also has superior reliability performance on electromigration, stress migration, and bias temperature test as compared with conventional PVD TaN.



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