Conferences related to DH-HEMTs

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE Energy Conversion Congress and Exposition (ECCE)

IEEE-ECCE 2020 brings together practicing engineers, researchers, entrepreneurs and other professionals for interactive and multi-disciplinary discussions on the latest advances in energy conversion technologies. The Conference provides a unique platform for promoting your organization.

  • 2019 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE-ECCE 2019 brings together practicing engineers, researchers, entrepreneurs and other professionals for interactive and multi-disciplinary discussions on the latest advances in energy conversion technologies. The Conference provides a unique platform for promoting your organization.

  • 2018 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of ECCE 2018 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energyconversion, industrial power and power electronics.

  • 2017 IEEE Energy Conversion Congress and Exposition (ECCE)

    ECCE is the premier global conference covering topics in energy conversion from electric machines, power electronics, drives, devices and applications both existing and emergent

  • 2016 IEEE Energy Conversion Congress and Exposition (ECCE)

    The Energy Conversion Congress and Exposition (ECCE) is focused on research and industrial advancements related to our sustainable energy future. ECCE began as a collaborative effort between two societies within the IEEE: The Power Electronics Society (PELS) and the Industrial Power Conversion Systems Department (IPCSD) of the Industry Application Society (IAS) and has grown to the premier conference to discuss next generation technologies.

  • 2015 IEEE Energy Conversion Congress and Exposition

    The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.

  • 2010 IEEE Energy Conversion Congress and Exposition (ECCE)

    This conference covers all areas of electrical and electromechanical energy conversion. This includes power electrics, power semiconductors, electric machines and drives, components, subsystems, and applications of energy conversion systems.

  • 2009 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the conference include all technical aspects of the design, manufacture, application and marketing of devices, circuits, and systems related to electrical energy conversion technology


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Periodicals related to DH-HEMTs

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems for Video Technology, IEEE Transactions on

Video A/D and D/A, display technology, image analysis and processing, video signal characterization and representation, video compression techniques and signal processing, multidimensional filters and transforms, analog video signal processing, neural networks for video applications, nonlinear video signal processing, video storage and retrieval, computer vision, packet video, high-speed real-time circuits, VLSI architecture and implementation for video technology, multiprocessor systems--hardware and software-- ...


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Letters, IEEE

Covers topics in the scope of IEEE Transactions on Communications but in the form of very brief publication (maximum of 6column lengths, including all diagrams and tables.)


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for DH-HEMTs

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Xplore Articles related to DH-HEMTs

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An Experimental Study of TLS Forward Secrecy Deployments

IEEE Internet Computing, 2014

Many Transport Layer Security (TLS) servers use the ephemeral Diffie-Hellman (DHE) key exchange to support forward secrecy. However, in a survey of 473,802 TLS servers, the authors found that 82.9 percent of the DHE-enabled servers use weak DH parameters, resulting in a false sense of security. They compared the server throughput of various TLS setups, and measured real-world client- side ...


Digital predistortion of wiener systems using the nonlinear filtered-x PEM algorithm with initial subsystem estimates

2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS), 2016

Adaptive predistortion of nonlinear systems described as IIR Wiener models is discussed in this paper. The predistorter is modeled as an IIR Hammerstein system. The parameters of the linear and nonlinear blocks of the Hammerstein predistorter are estimated simultaneously using the Nonlinear Filtered-x Prediction Error Method (NFxPeM) algorithm. The NFxPEM algorithm has much higher convergence speed than the Nonlinear Filtered-x ...


Foothold selection for quadruped robot based on learning from expert

2017 2nd International Conference on Advanced Robotics and Mechatronics (ICARM), 2017

Selecting the proper foothold is a key technology for the quadruped robot, although there has been so much progress in this area, most of the existing algorithms select foothold without considering the kinematic constraint of legs, and it is very tough to adjust the parameters of foothold selection model. In this paper, we are focus on designing the foothold selection ...


InGaAs/InP double heterojunction bipolar transistors with fmax=532GHz

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015

An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2exhibits a current cutoff frequency ft=350GHz and a maximum oscillation frequency fmax=532GHz which is to our knowledge the highest BVCEOever reported for InGaAs/InP DHBTs in China. The breakdown voltage is ...


Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)

IEEE Journal of Quantum Electronics, 1978

Stripe-geometry In1-xGaxP1-zAsz(x \approx 0.84-0.86, z \approx 0.38-0.42) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs1-yPysubstrates, are described that operate (CW, 77 K) in the visible at\lambda \approx 6280-6360Å with differential quantum efficiency\eta_{ext} \sim 28percent and power output in the range 1-7 mW.


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Educational Resources on DH-HEMTs

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IEEE.tv Videos

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IEEE-USA E-Books

  • An Experimental Study of TLS Forward Secrecy Deployments

    Many Transport Layer Security (TLS) servers use the ephemeral Diffie-Hellman (DHE) key exchange to support forward secrecy. However, in a survey of 473,802 TLS servers, the authors found that 82.9 percent of the DHE-enabled servers use weak DH parameters, resulting in a false sense of security. They compared the server throughput of various TLS setups, and measured real-world client- side latencies using an advertisement network. Their results indicate that using forward secrecy is no harder, and can even be faster using elliptic curve cryptography (ECC), than no forward secrecy.

  • Digital predistortion of wiener systems using the nonlinear filtered-x PEM algorithm with initial subsystem estimates

    Adaptive predistortion of nonlinear systems described as IIR Wiener models is discussed in this paper. The predistorter is modeled as an IIR Hammerstein system. The parameters of the linear and nonlinear blocks of the Hammerstein predistorter are estimated simultaneously using the Nonlinear Filtered-x Prediction Error Method (NFxPeM) algorithm. The NFxPEM algorithm has much higher convergence speed than the Nonlinear Filtered-x Least Mean Squares (NFxLMS) algorithm. In the NFxPEM algorithm, the nonlinear system is assumed to be known or accurately identified. In this paper, the NFxPEM with Initial Subsystem Estimates (NFxPEM-ISE) algorithm is developed to avoid accurate identification of the nonlinear system. Simulation study shows that the NFxPEM-ISE algorithm can efficiently precompensate the nonlinear distortion. Also, the NFxPEM-ISE algorithm achieves better performance as compared to the NFxLMS-ISE algorithm.

  • Foothold selection for quadruped robot based on learning from expert

    Selecting the proper foothold is a key technology for the quadruped robot, although there has been so much progress in this area, most of the existing algorithms select foothold without considering the kinematic constraint of legs, and it is very tough to adjust the parameters of foothold selection model. In this paper, we are focus on designing the foothold selection model and learning its parameters from expert guiding. Firstly, the terrain features that influence the robot stability are detected; Secondly, foothold selection model is designed, which considers both the terrain features and the kinematic constraint; Thirdly, the model parameters are learned with the Support Vector Machine, and the training data is recorded in the simulation environment, including the terrain features of candidate foothold and their rank orders; Lastly, the effectiveness of the algorithm for computing terrain features is validated in simulation.

  • InGaAs/InP double heterojunction bipolar transistors with fmax=532GHz

    An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2exhibits a current cutoff frequency ft=350GHz and a maximum oscillation frequency fmax=532GHz which is to our knowledge the highest BVCEOever reported for InGaAs/InP DHBTs in China. The breakdown voltage is 4.8V. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage controlled oscillator (VCO) and mixer applications at THz span.

  • Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)

    Stripe-geometry In1-xGaxP1-zAsz(x \approx 0.84-0.86, z \approx 0.38-0.42) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs1-yPysubstrates, are described that operate (CW, 77 K) in the visible at\lambda \approx 6280-6360Å with differential quantum efficiency\eta_{ext} \sim 28percent and power output in the range 1-7 mW.

  • Meta-modelling of microwave devices with rational functions and radial basis functions

    A new versatile meta-modelling framework is presented that automatically generates accurate and compact meta-models for passive electrical components. Meta-models or surrogate models are scalable analytical models that mimic the component behaviour over a user-defined design space (consisting of frequency and layout parameters). Both multivariable rational models and radial basis function models can be used to build the meta-models.

  • Effect of simultaneous transmit and receive antennas on cooperative cognitive radio networks

    In this paper, we address the performance improvement of cooperative cognitive radio networks (CCRNs) with secondary users exploiting multiple antennas in the multiple input multiple output (MIMO) scenario. In order to expand the region of achievable rate by enabling full-duplex communication between secondary users, we adopt simultaneous transmitting and receiving antennas for the secondary users. The link capacities of the proposed framework are analyzed under the assumption of full channel side information. It is shown through numerical evaluation that the proposed MIMO CCRN framework can provide a considerable performance gain over the conventional CCRN and conventional MIMO CCRN frameworks.

  • First InP/GaAsSb/InP DHBT Ka-band MMIC Oscillator

    The demonstration of the first MMIC oscillator using novel InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) is presented. The oscillator delivered an output power of 3.2 dBm at 34.9GHz with DC to RF conversion efficiency of 10.9%. The corresponding phase noise at 1MHz offset from the carrier frequency was -92dBc/Hz

  • Reduction of crystal defects in active layers of GaAs-AlGaAs double-heterostructure lasers for long-life operation

    The influence of oxygen in ambient gas during liquid-phase epitaxial growth on a double-heterostructure (DH) wafer is investigated. The oxygen incorporated into grown layers seems to be associated with the formation of crystal defects such as so-called dark-spot defects (DSD's) and saucer pits. When the oxygen concentration is reduced less than 0.03 ppm, crystal defects such as DSD's and saucer pits drastically decrease in the epitaxial layers. Al added into Ga solutions behaves as the getter of the oxygen in the Ga solutions and prevents the formation of DSD's in the active layers. The correlation between DSD's and etch pits is examined. All of the dislocations do not always contribute to the formation of DSD's. The formation of DSD's depends on oxygen concentration in the ambient hydrogen gas. In DH lasers fabricated from DH wafers grown under the extremely low oxygen concentration, the operating life at room temperature exceeds 10 000 h at the present time.

  • A technical comparison of IPSec and SSL

    IPSec (IP security) and SSL (secure socket layer) have been the most robust and most potential tools available for securing communications over the Internet. Both IPSec and SSL have advantages and shortcomings. Yet no paper has been found comparing the two protocols in terms of characteristic and functionality. Our objective is to present an analysis of security and performance properties for IPSec and SSL.



Standards related to DH-HEMTs

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Jobs related to DH-HEMTs

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