Conferences related to Current slump

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2020 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods and Modeling, and Accelerators.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


GLOBECOM 2020 - 2020 IEEE Global Communications Conference

IEEE Global Communications Conference (GLOBECOM) is one of the IEEE Communications Society’s two flagship conferences dedicated to driving innovation in nearly every aspect of communications. Each year, more than 2,900 scientific researchers and their management submit proposals for program sessions to be held at the annual conference. After extensive peer review, the best of the proposals are selected for the conference program, which includes technical papers, tutorials, workshops and industry sessions designed specifically to advance technologies, systems and infrastructure that are continuing to reshape the world and provide all users with access to an unprecedented spectrum of high-speed, seamless and cost-effective global telecommunications services.


ICC 2020 - 2020 IEEE International Conference on Communications

All topics relating to existing and emerging communications networking technologies.


2019 IEEE 30th Annual International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC)

The Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC) is one of the premier conferences in the wireless research arena and has a long history of bringing together academia, industry and regulatory bodies. Today, it has become one of the IEEE Communication Society’s major conferences in wireless communications and networks. The topics cover the physical layer (PHY) and fundamentals of wireless communications, medium access control (MAC) and cross-layer design, mobile and wireless networks, as well as services, applications, and business.


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Periodicals related to Current slump

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Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Engineering Management Review, IEEE

Reprints articles from other publications of significant interest to members. The papers are aimed at those engaged in managing research, development, or engineering activities. Reprints make it possible for the readers to receive the best of today's literature without having to subscribe to and read other periodicals.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.


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Most published Xplore authors for Current slump

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Xplore Articles related to Current slump

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Effects of field plate on surface- and substrate-related power slump in GaAs MESFETTS

2010 International Symposium on Signals, Systems and Electronics, 2010

Two-dimensional transient analysis of GaAs MESFETs with a field plate is performed in which surface states and substrate traps are considered. It is studied how the existence of field plate affects slow current transients (lag phenomena) and power slump (current slump) due to surface states and substrate traps. It is shown that both surface-state-related and substrate-trap-related transients and power slump ...


Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs

2013 IEEE International Conference of IEEE Region 10 (TENCON 2013), 2013

We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface ...


Modeling and limitations of AlGaN/GaN HFETs

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497), 2001

Field effect transistors based upon the AlGaN/GaN system often demonstrate current slump and premature saturation of the gain, accompanied by degradation of the RF output power and power-added efficiency. It is shown that source resistance modulation under high current injection conditions can produce premature saturation effects consistent with experimental data. Elimination of the effect will require design modifications that increase ...


Analysis of Drain Lag and Current Slump in GaN-Based HEMTs and MESFETs

2007 International Symposium on Signals, Systems and Electronics, 2007

Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that the deep levels affect the results essentially in a similar way as for GaN MESFETs. It is shown that so-called current slump is ...


Analysis of Removal of Surface-State-Related Lags and Current Slump in GaAs FETs

IEEE Electron Device Letters, 2013

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, ...


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Educational Resources on Current slump

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IEEE-USA E-Books

  • Effects of field plate on surface- and substrate-related power slump in GaAs MESFETTS

    Two-dimensional transient analysis of GaAs MESFETs with a field plate is performed in which surface states and substrate traps are considered. It is studied how the existence of field plate affects slow current transients (lag phenomena) and power slump (current slump) due to surface states and substrate traps. It is shown that both surface-state-related and substrate-trap-related transients and power slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness to reduce the power slump and also to maintain high frequency performance of GaAs MESFETs.

  • Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs

    We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field- plate length and SiO<sub>2</sub> passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.

  • Modeling and limitations of AlGaN/GaN HFETs

    Field effect transistors based upon the AlGaN/GaN system often demonstrate current slump and premature saturation of the gain, accompanied by degradation of the RF output power and power-added efficiency. It is shown that source resistance modulation under high current injection conditions can produce premature saturation effects consistent with experimental data. Elimination of the effect will require design modifications that increase the threshold for space-charge effects to become significant.

  • Analysis of Drain Lag and Current Slump in GaN-Based HEMTs and MESFETs

    Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that the deep levels affect the results essentially in a similar way as for GaN MESFETs. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

  • Analysis of Removal of Surface-State-Related Lags and Current Slump in GaAs FETs

    Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO<sub>2</sub> passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO<sub>2</sub> layer.

  • Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements

    AlGaN/GaN HFETs have been analyzed using pulsed I-V measurements and RF time- domain measurements in an attempt to analyze the phenomenon of DC-RF dispersion and achieve maximum RF performance. The pulsed I-V measurements exhibited the common problem of current slump, as did the RF power performance of the device. The RF time-domain waveforms are used to show that the RF knee- walkout increases with drain bias voltage, thus negating any improved power and efficiency performance that a larger voltage swing would achieve. It was also found that the degree of RF knee-walkout changes depending on the class of operation of the device. Although current slump is evident, it is not permanent, and there is negligible degradation of the device after prolonged RF stimulus.

  • Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

    Successive reactive ion etchings (RIE) were performed on the access regions of p/sup +/-n GaN JFETs. A decrease in the n-layer sheet resistance, with a consequent increase in I/sub DSS/ was detected after complete removal of the p-layer, due to a reduction in the n-layer depletion region. An increase in RF-dispersion was experienced, as a result of the progressive reduction of screening from surface-states originally provided by the overlying p-cap layer. No dispersion was detected before cap removal. A continuous increase in f/sub t/ and f/sub max/ was detected even before complete removal of the p-layer, due to virtual gate length reduction. It is expected that an optimized p-doped overlayer will provide current slump suppression without degradation in cutoff frequency or breakdown.

  • Can't we all just get along?

    Now the push is on to move beyond simply exchanging data and to allow software applications to employ other applications in the same way that a person might use multiple programs to achieve a task. For example, a person has no problem using a Web browser to download an image, another program to sharpen the image, and finally an e-mail program to send the image to someone else. This effort to expose functionality has ultimately resulted in plans to create so- called Web services These plans originated as companies tried to figure out distributed computing, which spreads heavy computational tasks over multiple computers in a network and yet makes the results appear to the end user as if they were the product of running an application on a single, superpowerful machine.

  • Effects of gate recess depth on pulsed I-V characteristics of AlGaN/GaN HFETs

    This paper reports pulsed I-V characteristics of AlGaN/GaN HFETs fabricated with gate regions recessed into the AlGaN barrier layer with different recess geometries. Pulsed I-V characteristics are known to correlate with rf ouput power measurements vs bias, and are an important estimator of "knee voltage walkout" and "current slump" effects in the nitride HFETs. Our measurements indicate that the knee voltage walkout is strongly dependent on the depth of the recessed region, and that the walkout is minimized in devices with shallower recess depth. The results strongly support the model that current slump is due to surface traps. An effective trap time constant of 10 /spl mu/sec is extracted for these devices.

  • Advanced RF IV Waveform Engineering Tool for Use in Device Technology Optimization: RF Pulsed Fully Active Harmonic Load Pull with Synchronized 3eV Laser

    The RF performance obtainable from a device often falls short of the expectations raised by analysis of the DCIV curves. This difference is typically associated with thermal or trapping effects. Hence, RF performance is traditionally assessed using load pull techniques, which can identify the optimum operating conditions, but cannot explain the shortfall. It has previously been shown that RF IV Waveform Engineering methods can give more insight to why there are differences without necessarily identifying their cause [1]. Here we show how adding RF pulse capability can help identify thermal contributions, and a synchronized 3eV Laser excitation can help identify and clear trapping contributions. Together these methods provide a powerful diagnostic tool for device technology optimization.



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