Conferences related to Crystal microstructure

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2020 IEEE 21st International Conference on Vacuum Electronics (IVEC)

Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting technologies.System developers will find that IVEC provides a unique snapshot of the current state-of-the-art in vacuum electron devices. These devices continue to provide unmatched power and performance for advanced electromagnetic systems, particularly in the challenging frequency regimes of millimeter-wave and THz electronics.Plenary talks will provide insights into the history, the broad spectrum of fundamental physics, the scientific issues, and the technological applications driving the current directions in vacuum electronics research.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


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Periodicals related to Crystal microstructure

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


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Most published Xplore authors for Crystal microstructure

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Xplore Articles related to Crystal microstructure

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Effect of Oxygen Bombardment on Structural and Magnetic Properties of Ion-beam Deposited NiFe/Fe-oxide Bilayers

2006 IEEE International Magnetics Conference (INTERMAG), 2006

In this paper, the potential for new device materials and insight into the effects of some of the different iron oxide forms on exchange bias with NiFe (Permalloy) was discussed. The iron-oxides have significantly different magnetic properties. Thin film bilayers were deposited using a dual ion-beam deposition technique that produced an antiferromagnetic iron-oxide layer composition that ranged from Fe<sub>3</sub>O<sub>4</sub> to ...


Growth of an Au layer with a thickness in the order of 10 nm on a Yb-Ba-Cu-O substrate

IEEE Transactions on Magnetics, 1991

A Yb-Ba-Cu-O/Au structure for an S/N/S (superconductor/normal metal/superconductor) Josephson junction has been successfully fabricated using the bulk Yb-Ba-Cu-O substrate processed by the recently developed PMQ (plasma-arc melting and rapid quenching) method. The coverage of Au layers with a thickness of 30 nm at a substrate temperature of 600 degrees C was confirmed to be almost 100% without any pinholes, which ...


Evaluation of CSD-PZT thick films with different film density

ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076), 2000

Over-l-/spl mu/m-thick PbZr/sub 0.52/Ti/sub 0.48/O/sub 3/ (PZT) thick films with different film density were prepared on Pt/Ti/SiO/sub 2//Si substrates by means of chemical solution deposition (CSD). Stable propylene-glycol-based sol-gel solutions were used as the chemical solutions. We evaluated the microstructure, crystal orientation, leakage current density, ferroelectric properties and longitudinal strain properties of the films. The following results were obtained. With ...


Characterization of Nb3Sn diffusion layer (A-15) material

IEEE Transactions on Magnetics, 1979

Microstructural characterization of Nb3Sn diffusion layers grown by Sn-vapor reaction with single crystal Nb substrates has been carried out using Auger and X-ray spectroscopy, X-ray and reflection electron diffractometry, and scanning electron microscopy. The layers exhibit preferred crystallographic orientation traceable to the underlying Nb-substrate orientation. The\langle 111 rangle-Nb-substrate layers differ substantially from all other-Nb- direction layers. In particular, they exhibit ...


Origin of high coercivities in as-cast SmFe4-xNixB alloys

IEEE Transactions on Magnetics, 1987

Large coercive fields have been observed in as-cast SmFe4-xNixB alloys. The coercive fields increase drastically at lower temperatures and complete hysteresis loops cannot be measured at cryogenic temperatures. Microstructure studies show the presence of two types of grain with slightly different chemical composition (Fe-rich or Ni-rich) but with the same crystal structure. These differences in chemical composition may also occur ...


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Educational Resources on Crystal microstructure

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IEEE-USA E-Books

  • Effect of Oxygen Bombardment on Structural and Magnetic Properties of Ion-beam Deposited NiFe/Fe-oxide Bilayers

    In this paper, the potential for new device materials and insight into the effects of some of the different iron oxide forms on exchange bias with NiFe (Permalloy) was discussed. The iron-oxides have significantly different magnetic properties. Thin film bilayers were deposited using a dual ion-beam deposition technique that produced an antiferromagnetic iron-oxide layer composition that ranged from Fe<sub>3</sub>O<sub>4</sub> to Fe<sub>2</sub>O<sub>3</sub>. The crystal structures of the Fe-oxide films were characterized by X-ray diffractometry (XRD). A JEOL (JEM-2010) Transmission electron microscope (TEM) operating at 200 kV was used for microstructural analysis. The magnetic properties such as exchange coupling and magnetic hysteresis of these bilayers were characterized using a vibrating sample magnetometer (VSM) and a superconducting quantum interference device (SQUID) magnetometry.

  • Growth of an Au layer with a thickness in the order of 10 nm on a Yb-Ba-Cu-O substrate

    A Yb-Ba-Cu-O/Au structure for an S/N/S (superconductor/normal metal/superconductor) Josephson junction has been successfully fabricated using the bulk Yb-Ba-Cu-O substrate processed by the recently developed PMQ (plasma-arc melting and rapid quenching) method. The coverage of Au layers with a thickness of 30 nm at a substrate temperature of 600 degrees C was confirmed to be almost 100% without any pinholes, which is thin enough to make use of the proximity effect. Similar experiments using Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub x/ single crystals indicated the possibility of high coverage at even lower substrate temperatures.

  • Evaluation of CSD-PZT thick films with different film density

    Over-l-/spl mu/m-thick PbZr/sub 0.52/Ti/sub 0.48/O/sub 3/ (PZT) thick films with different film density were prepared on Pt/Ti/SiO/sub 2//Si substrates by means of chemical solution deposition (CSD). Stable propylene-glycol-based sol-gel solutions were used as the chemical solutions. We evaluated the microstructure, crystal orientation, leakage current density, ferroelectric properties and longitudinal strain properties of the films. The following results were obtained. With decreasing film density, the crystal form varied from columnar to granular, the crystal orientation changed from [111]-preferred to random, the leakage current density increased and the remanent polarization decreased. However the electrically induced strain hardly varied.

  • Characterization of Nb3Sn diffusion layer (A-15) material

    Microstructural characterization of Nb3Sn diffusion layers grown by Sn-vapor reaction with single crystal Nb substrates has been carried out using Auger and X-ray spectroscopy, X-ray and reflection electron diffractometry, and scanning electron microscopy. The layers exhibit preferred crystallographic orientation traceable to the underlying Nb-substrate orientation. The\langle 111 rangle-Nb-substrate layers differ substantially from all other-Nb- direction layers. In particular, they exhibit surface-like composition profiles over several hundred angstroms into the bulk, a very rough micro- structure including numerous microcracks, and a surface superconducting transition temperature of < 1 K. Non-\langle 111 rangle-Nb-substrate layers with 1 μm columnar grain structure and surface Tc's ∼ 18 K appear to have breaking stresses far in excess of bulk polycrystalline Nb3Sn.

  • Origin of high coercivities in as-cast SmFe4-xNixB alloys

    Large coercive fields have been observed in as-cast SmFe4-xNixB alloys. The coercive fields increase drastically at lower temperatures and complete hysteresis loops cannot be measured at cryogenic temperatures. Microstructure studies show the presence of two types of grain with slightly different chemical composition (Fe-rich or Ni-rich) but with the same crystal structure. These differences in chemical composition may also occur at the microscopic level and can cause fluctuations in exchange and magnetic anisotropy that can pin the domain walls.

  • Effect of nano-crystalline structures in the interface on double-clad Cr4+: YAG crystal fiber

    The microstructure of the YAG/SiO2 interface in double-clad Cr4+: YAG crystal fibers were investigated by HRTEM. These nano-domains have a little angle about 2deg title from the core YAG structures at the original interface.

  • Microstructures of Ge-dots/Si multilayered structures fabricated by Ni-induced lateral crystallization

    The microstructures of the Ge-dots/Si multilayered structure films fabricated by metal-induced lateral crystallization (MILC) have been investigated. The micro-Raman spectroscopy, optical microscopy and electron microscopy observations reveal that the crystallized Si film has large leaf-like grains elongated along the lateral crystallization direction, which shows (110) preference. Furthermore, this preference is found to deliver to different Si layers of the multilayered structures to have an identical crystalline orientation. The strain shift of Ge dots as deduced from Raman spectroscopy reveals a formation of a high-quality interface between the crystallized Si and Ge-dot

  • Forming structure and magnetic properties of Alnico VS55 alloys

    Some results of explorations on crystallographic structure perfection of Alnico VS55 single crystals are presented. Segregation and block disorientation in crystals are shown to have some influence on the process of spinodal decomposition in a magnetic field, and on permanent magnet properties.

  • The conversion of high energy radiation to visible light by luminescent ceramics

    The properties of luminescence ceramics which are roughly based on rare-earth doped oxides, oxysulfides, garnets, and silicates have been investigated. The characteristic luminescence data of the ceramics considered, such as emission spectra and decay, are similar to those of corresponding powders or single crystals. However, conversion efficiency, afterflow, and energy resolution are strongly affected by ceramic processing due to its influence on the microstructure, final optical quality, and defect structure. In this connection residual pores and grain boundaries play an important role. For example, the insufficient optical quality of Gd/sub 2/O/sub 2/Sr:Pr,Ce- ceramics is the main reason not only for a reduced light output but also for a rather pronounced degradation of the energy resolution, beyond the merely statistical limit. Consequently, luminescent ceramics, at least in their present form, appear not be suited for spectrometric applications. In the case of scintillation counting, the presented ceramics exhibit rather high decay constants giving low count rates. This drawback can be improved by using activator dopants with faster optical transition.<<ETX>>

  • Si-gate CMOS devices on a Si lateral solid-phase epitaxial layer

    Si-gate CMOS devices fabricated on a lateral solid-phase epitaxial Si layer grown from vacuum-deposited amorphous Si over SiO/sub 2/ patterns are discussed. Electrical characteristics are examined and correlated with microstructural characteristics of the layer by performing transmission electron microscopy on actual transistors. The layer can be divided into three regions. Carrier mobilities obtained from each region are discussed in terms of the crystalline quality. The maximum obtained field-effect mobilities are 570 cm/sup 2//V-s and 160 cm/sup 2//V-s for n-channel and p-channel transistors, respectively. The SMOS inverter chain with 100 stages and a channel length of 1.5 mu m has a delay time of 310 ps per gate. These results indicate that the lateral solid-phase epitaxy has potential for the fabrication of high-speed silicon-on-insulator devices.<<ETX>>



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