Conferences related to Copper compounds

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2020 IEEE 21st International Conference on Vacuum Electronics (IVEC)

Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting technologies.System developers will find that IVEC provides a unique snapshot of the current state-of-the-art in vacuum electron devices. These devices continue to provide unmatched power and performance for advanced electromagnetic systems, particularly in the challenging frequency regimes of millimeter-wave and THz electronics.Plenary talks will provide insights into the history, the broad spectrum of fundamental physics, the scientific issues, and the technological applications driving the current directions in vacuum electronics research.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.


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Periodicals related to Copper compounds

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Copper compounds

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Xplore Articles related to Copper compounds

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Warpage Simulation and Optimization of Fan-Out Wafer level Package(FO-WLP) with TMV under Different Processes

2018 19th International Conference on Electronic Packaging Technology (ICEPT), 2018

Fan-Out wafer-level package (FO-WLP) has become a mainstream advanced packaging technology and from the first generation fan-out package, the second generation of new fan-out packaging technologies, such as FO MCP, FO POP, and POP SiP is gradually derived. In FO-WLP, wafer warpage caused by mismatch of coefficients of thermal expansion (CTE) between materials has always been an important matter. This ...


Femtosecond pulse propagation at exciton resonance: polariton beats and optical precursor

2002 Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 2002

Summary form only given. We perform pulse propagation experiments at the Z/sub 3/-exciton resonance of CuCl, and observe polariton beats and an optical precursor clearly. The exciton in CuCl has very large oscillator strength and long decay time. With increasing input-pulse intensity, polariton beats are strongly suppressed. We confirmed these experimental results with Lorentzian oscillator model and obtained good agreement.


Treatment of high-altitude brushes by application of metallic halides

Electrical Engineering, 1945

It has been found that the rapid wear of brushes under high-altitude conditions can be prevented by the treatment of the brushes with a suitable metallic halide. Carbon, electrographitic, and metal-graphite brush grades all respond to such treatments. A great many nondeliquescent metallic iodides, bromides, chlorides, and fluorides have been tested and found to prevent brush dusting on the heavy-duty ...


Erratum to “Improved Photocurrent in Cu(In,Ga)Se$_2$Solar Cells: From 20.8% to 21.7% Efficiency With CdS Buffer and 21.0% Cd-free” [Sep 15 1487-1491]

IEEE Journal of Photovoltaics, 2016

There is a minor typo in the above paper (ibid., vol. 5, no. 5, pp. 1487-1491, Sep. 2015). In Table II, it shoud read 1.5E5 instead of 1.5E15 for A of ZnO:Al. This only leads to a (systematic) minor error but affects neither our findings nor our conclusions.


Hard X-ray photoacoustic spectroscopy in Cu alloys and compounds

IEEE 1991 Ultrasonics Symposium,, 1991

The hard X-ray spectra of Cu alloys (brass and phosphor bronze) and Cu compounds (CuInSe/sub 2/, CuO, Cu/sub 2/O, CuCl, CuBr, and CuI) have been measured at X-ray absorption near-edge structured (XANES) regions with a photoacoustic detector using synchrotron radiation. It is shown that the information derived from XANES is also included in the X-ray photoacoustic spectrum which reflects the ...


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Educational Resources on Copper compounds

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IEEE-USA E-Books

  • Warpage Simulation and Optimization of Fan-Out Wafer level Package(FO-WLP) with TMV under Different Processes

    Fan-Out wafer-level package (FO-WLP) has become a mainstream advanced packaging technology and from the first generation fan-out package, the second generation of new fan-out packaging technologies, such as FO MCP, FO POP, and POP SiP is gradually derived. In FO-WLP, wafer warpage caused by mismatch of coefficients of thermal expansion (CTE) between materials has always been an important matter. This paper aims at a FO POP package, which uses through mold via (TMV) to achieve the upper and lower interconnections between packages. The packaging method is chip-first and face-up. The wafer warpage in each thermal process of the package is simulated and analyzed. At the same time, the chip spacing, molding compound thickness, TMV diameter, carrier thickness and material effect on warpage in the plastic molding process and copper layer thickness, copper area ration, dielectric layer thickness and material effect on warpage in the re-distribution layer (RDL) process is studied. And an effective method for reducing wafer warpage in each thermal process is proposed.

  • Femtosecond pulse propagation at exciton resonance: polariton beats and optical precursor

    Summary form only given. We perform pulse propagation experiments at the Z/sub 3/-exciton resonance of CuCl, and observe polariton beats and an optical precursor clearly. The exciton in CuCl has very large oscillator strength and long decay time. With increasing input-pulse intensity, polariton beats are strongly suppressed. We confirmed these experimental results with Lorentzian oscillator model and obtained good agreement.

  • Treatment of high-altitude brushes by application of metallic halides

    It has been found that the rapid wear of brushes under high-altitude conditions can be prevented by the treatment of the brushes with a suitable metallic halide. Carbon, electrographitic, and metal-graphite brush grades all respond to such treatments. A great many nondeliquescent metallic iodides, bromides, chlorides, and fluorides have been tested and found to prevent brush dusting on the heavy-duty electric units of aircraft. These treatments also have been applied with considerable success to earth-surface machines operating under severe commutating conditions. A mechanism by which this class of chemical compound may react to maintain a satisfactory low-friction film on a commutator is proposed.

  • Erratum to “Improved Photocurrent in Cu(In,Ga)Se$_2$Solar Cells: From 20.8% to 21.7% Efficiency With CdS Buffer and 21.0% Cd-free” [Sep 15 1487-1491]

    There is a minor typo in the above paper (ibid., vol. 5, no. 5, pp. 1487-1491, Sep. 2015). In Table II, it shoud read 1.5E5 instead of 1.5E15 for A of ZnO:Al. This only leads to a (systematic) minor error but affects neither our findings nor our conclusions.

  • Hard X-ray photoacoustic spectroscopy in Cu alloys and compounds

    The hard X-ray spectra of Cu alloys (brass and phosphor bronze) and Cu compounds (CuInSe/sub 2/, CuO, Cu/sub 2/O, CuCl, CuBr, and CuI) have been measured at X-ray absorption near-edge structured (XANES) regions with a photoacoustic detector using synchrotron radiation. It is shown that the information derived from XANES is also included in the X-ray photoacoustic spectrum which reflects the heat production processes in these Cu alloys and compounds. However, the results showed that the increases and changes of the photoacoustic signal were different from those of the X-ray absorption coefficient at the photon energy regions. These differences between the X-ray photoacoustic signal and the X-ray absorption coefficient at the XANES regions suggest the importance of the electron-phonon interaction of these materials.<<ETX>>

  • Progress Toward 1000-mV Open-Circuit Voltage on Chalcopyrite Solar Cells

    Previously, an open-circuit voltage of 960 mV was reported on Se-free Cu(In,Ga)S<sub>2</sub> (CIGS) solar cell with a CdS buffer layer. In this paper, we report our latest progress toward 1000 mV on a Se-free Cu(In,Ga)S<sub>2</sub> solar cell with a Cd-free buffer layer. The highest open-circuit voltage of 973 mV was demonstrated by rapid thermal annealing and Zn<sub>1-x</sub>Mg<sub>x</sub>O buffer layer application.

  • Experimental results versus numerical simulations of In/Cu intermetallic compounds growth

    Indium is often used as a solder material which also plays a role of thermal interface e.g. in power LED systems. Indium and copper forms the intermetallic compounds. The growth rate constant at 400 K between copper and indium by the molecular dynamics simulations, as well as, experimentally was investigated. The results shown that the growth of the intermetallic compound in both cases follows the parabolic low, which indicates that the growth was mainly controlled by volume diffusion.

  • Influence of multiple reflows and thermal shock on interfacial IMC of solder joints between Sn0.3Ag0.7Cu solder/pads(HASL, OSP, electrolytic Ni/Au and ENIG PCB finishes)

    The effects of multiple reflows and thermal shock on interfacial reaction of the solder joints between Sn-0.3Ag-0.7Cu solder/pads (HASL, OSP, electrolytic Ni/Au and ENIG PCB finishes) were systematically investigated in this work. The results showed that the scallop Cu<sub>6</sub>Sn<sub>5</sub> phase were formed in HASL and OSP finish pads during reflows, whereas the cylinder-type (Cu, Ni)<sub>6</sub>Sn<sub>5</sub> near the solder and needle-type (Ni, Cu)<sub>3</sub>Sn<sub>4</sub> adjacent to the Ni layer were formed in electrolytic Ni/Au and ENIG finish pads. For all the four kinds of finishes, the thickness of IMCs increased with reflow times increasing, and the interfacial IMCs growth was controlled by grain boundary diffusion; the growth rate at Cu surface was faster than at Ni surface. Furthermore, it was also indicated that the interfacial IMCs growth were not notable with thermal shock cycle numbers increasing, but Kirkendall voids could be observed in the Sn-Cu- Ni intermetallic compounds layer for electrolytic Ni/Au and ENIG Finish Under thermal shock tests.

  • Formation of single phase Cu-Sn IMCs via layer-by-layer electroplating of Cu and Sn metals

    The intermetallic compounds, Cu6Sn5and Cu3Sn, have been prepared via layer-by- layer and single-layer electroplating with subsequent annealing. The two preparation methods were compared in terms of annealing temperature and time, different electroplating effect, and film thickness. Moreover, two copper plates were joined together to form a full-IMC (Cu6Sn5and Cu3Sn) joint. The shear mechanical property of the IMCs was studied by stretching the plates under different rates. Finally, it was found that the average shear strength of the IMC joints was up to 0.84 MPa when the thickness of the IMC was less than 3 μm. Fracture analysis indicates that the Cu6Sn5lead to cleavage fracture while the Cu3Sn shows typical intergranular fracture.

  • Correction to “Potassium Fluoride ex-situ Treatment on both Cu-rich and Cu-poor CuInSe2 Thin Film Solar Cells” [Mar 17 684-689]

    Presents corrections to the paper, “Potassium fluoride ex situ treatment on both Cu-Rich and Cu-Poor CuInSe2 thin film solar cells,” (Elanzeery, H., et al), IEEE J. Photovolt., vol. 7, no. 2, pp. 684–689, Mar. 2017.



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