Conferences related to Copper alloys

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


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Periodicals related to Copper alloys

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Copper alloys

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Xplore Articles related to Copper alloys

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An 8b 250MHz A/D converter

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1986

An 8b converter, fabricated in a 5GHz, oxide-isolated bipolar process, will be reported. Full power bandwidth is 125MHz. The packaging used for the converter accomodates a power dissipation of 12W.


Simplified and programmable design approach for strain sensor interface

2016 International Conference on Recent Advances and Innovations in Engineering (ICRAIE), 2016

In this paper, a simplified technique is proposed which enables the user to nullify offset whenever power is switched on of the circuit and also based on the requirement of the user. In this method strain sensor is the part of the resistive bridge which is used as Quarter Bridge. The voltage excitation to the bridge is provided by a ...


Cycling behavior of nanophase Cu/sub 6/Sn/sub 5/ anodes

Seventeenth Annual Battery Conference on Applications and Advances. Proceedings of Conference (Cat. No.02TH8576), 2002

Alloy anodes offer the advantages of higher capacity and enhanced safety compared to graphite. One alloy that has received attention is Cu/sub 6/Sn/sub 5/. A major problem with Cu/sub 6/Sn/sub 5/ and alloys in general is their poor capacity retention upon cycling. It was observed that a nanophase Cu/sub 6/Sn/sub 5/ alloy produced by a chemical method has increased cycle ...


GlidCop(R) AL-25 first wall plates-IG1 grade compared to IG0 grade

17th IEEE/NPSS Symposium Fusion Engineering (Cat. No.97CH36131), 1997

GlidCop(R) (copper that is dispersion strengthened with aluminum oxide) is a primary candidate for ITER applications requiring copper alloys, including first wall and divertor components. The GlidCop AL-25 IG0 grade process and specification was developed to define the base properties for GlidCop plates made in the size range required for first wall modules. IG0 defines a process to make plates ...


Carbon nanotube growth from Cu-Co alloys for field emission applications

IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479), 2003

We have used Cu-Co alloy to generate uniform distribution of Co precipitates, and successfully grown CNTs by CVD on the Cu support.


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Educational Resources on Copper alloys

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IEEE-USA E-Books

  • An 8b 250MHz A/D converter

    An 8b converter, fabricated in a 5GHz, oxide-isolated bipolar process, will be reported. Full power bandwidth is 125MHz. The packaging used for the converter accomodates a power dissipation of 12W.

  • Simplified and programmable design approach for strain sensor interface

    In this paper, a simplified technique is proposed which enables the user to nullify offset whenever power is switched on of the circuit and also based on the requirement of the user. In this method strain sensor is the part of the resistive bridge which is used as Quarter Bridge. The voltage excitation to the bridge is provided by a voltage reference. The output of the bridge reaches precision sensor signal amplifier through over-voltage protection circuit. Dynamic range and bridge offset adjustment both can be achieved in the circuit as per requirement. High precision Analog to Digital Converter digitizes data. The output is then captured on the monitoring computer to verify the results.

  • Cycling behavior of nanophase Cu/sub 6/Sn/sub 5/ anodes

    Alloy anodes offer the advantages of higher capacity and enhanced safety compared to graphite. One alloy that has received attention is Cu/sub 6/Sn/sub 5/. A major problem with Cu/sub 6/Sn/sub 5/ and alloys in general is their poor capacity retention upon cycling. It was observed that a nanophase Cu/sub 6/Sn/sub 5/ alloy produced by a chemical method has increased cycle life compared to Cu/sub 6/Sn/sub 5/ alloys produced by conventional melting and mechanical alloy.

  • GlidCop(R) AL-25 first wall plates-IG1 grade compared to IG0 grade

    GlidCop(R) (copper that is dispersion strengthened with aluminum oxide) is a primary candidate for ITER applications requiring copper alloys, including first wall and divertor components. The GlidCop AL-25 IG0 grade process and specification was developed to define the base properties for GlidCop plates made in the size range required for first wall modules. IG0 defines a process to make plates that are declad and annealed at 1000/spl deg/C to simulate the assembly conditions for fabrication of first wall modules. The GlidCop IG1 process is a variant of the IG0 process. It was developed for the long term commercial supply of plates for the first wall. The production sequence for IG1 plates is the same as IG0 plates, except IG1 plates are supplied clad and not annealed. The copper cladding is left on the IG1 plates to protect the core GlidCop material from oxidation and damage during rolling and handling. Annealing is eliminated because the IG1 plates will experience temperatures in the 1000/spl deg/C range during HIP assembly, thus annealing will take place during assembly. GlidCop IG1 plates have been produced and tested by OMG. Properties of IG1 plates are compared to the current GlidCop IG0 properties database.

  • Carbon nanotube growth from Cu-Co alloys for field emission applications

    We have used Cu-Co alloy to generate uniform distribution of Co precipitates, and successfully grown CNTs by CVD on the Cu support.

  • Improvements in the Electromigration Performance of an Aluminium-Copper Alloy Metallization by Optimization of the Copper Distribution

    The alloying of Al interconnects with Cu has been shown [1] to give a vast improvement in electromigration performance over pure-Al interonnects. In the work presented here it has been demonstrated that there is an optimum degree of Cu distribution at which the resistance to electromigration of an aluminium-copper alloy metallization can befur-ther enhanced. This microstructure is achieved using a relatively simple temperature ageing step to promote the coating of the aluminium grain boundaries with segregated copper atoms. Electromigration lifetimes are shown to be increased by a factor of 2. Measurements on n-MOSFETS have show that such a temperature ageing step has negligible effect on device performance. It is concluded that temperature ageing is a viable method of achieving enhanced interconnect electromigration performance.

  • Polymeric conductive pastes as solder replacement for flip-chip attachment

    The fabrication and characterization of flip-chip assemblies using four polymeric conductive pastes as attachment materials are reported. Three thermoset and one thermoplastic polymeric conductive pastes were investigated. Polymeric conductive pastes having silver particles 2 μm in size made good contact to either smooth or rough metal. Electrical contact with pastes whose particles were 5 μm or larger could only be obtained on rough metal.

  • Standard Definitions and Requirements for High Voltage Air Switches, Insulators, and Bus Supports

    Supplement to ANSI/IEEE C37.30-1971

  • Behavior of conductive microparticles under electric field in vacuum and their influence on breakdown characteristics

    Impulse breakdown voltage (BDV) for the gap which was injected with copper microparticles with a diameter from 7 to 500 /spl mu/m is measured. Electrode materials are copper, stainless steel, and an alloy of copper and chromium. In the short gap (approximately <5 mm), the BDV does not depend on the particle size or electrode material. However, in the long gap (>5 mm), the BDV varies according to the particle size and electrode material. Compared with the short gap, incrementation of the BDV with an increase in gap length is gradual. For both gap ranges, the BDV under negatively charged particles is lower than the BDV under positive polarity. The effectiveness of electrode surface roughness on the BDV is small compared with the clear gap. Further, AC voltages are applied to a rod-plate gap which was injected in the particles in order to observe their dynamic behavior. The particles begin to move when the upper direction electrostatic force originated by the AC field competes to the gravity force acting on the particles, and are finally removed from the area where the electrostatic force exceeds the gravity force as a result of reflection movements between electrodes.

  • Enhancement of electrical property and thermal stability of (Ba,Sr)TiO/sub 3/ thin films on Cu(Mg) bottom electrodes

    The feasibility of using Cu (Mg) alloy films as bottom electrodes for (Ba,Sr) TiO/sub 3/ (BST) capacitors has been investigated for application of high- frequency devices at interconnect levels. When Cu was used as the bottom electrode of the BST capacitor, severe interdiffusion occurred between Cu and BST and resulted in serious oxidation after annealing in an oxygen ambient at elevated temperatures. BST/Cu(Mg) structure reduced the leakage current density down to 3.0 /spl times/ 10/sup -8/ A/cm/sup 2/ at 1 MV/cm and increased the breakdown filed up to 2.4 MV/cm from 0.4 MV/cm at 10/sup -6/ A/cm/sup 2/ compared to BST/Cu structure. The enhancing characteristics of the BST/Cu(Mg) structure are most likely due to the formation of a self-aligned MgO layer, which results in excellent diffusion barrier properties and electrical characteristics. In addition, the bias temperature stressing under an electric field of 2 MV/cm and temperatures between 100 and 200/spl deg/C was used to accelerate the Cu ion drift. The BST films using Cu(Mg) as electrodes are found to have lower Cu drift than those using Cu electrodes. Therefore, a self-aligned MgO layer could be a good Cu drift barrier layer for reliable ULSI interconnects.



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