Contact resistance

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The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the measurement method. (Wikipedia.org)






Conferences related to Contact resistance

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2020 IEEE 21st International Conference on Vacuum Electronics (IVEC)

Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting technologies.System developers will find that IVEC provides a unique snapshot of the current state-of-the-art in vacuum electron devices. These devices continue to provide unmatched power and performance for advanced electromagnetic systems, particularly in the challenging frequency regimes of millimeter-wave and THz electronics.Plenary talks will provide insights into the history, the broad spectrum of fundamental physics, the scientific issues, and the technological applications driving the current directions in vacuum electronics research.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.


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Periodicals related to Contact resistance

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


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Most published Xplore authors for Contact resistance

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Xplore Articles related to Contact resistance

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Luminescence amplification

1964 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1964

None


A bipolar opamp with a noise resistance of less than 50 ω

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1986

This paper will cover the design of an opamp with input noise resistance of less than 50Ω. The offset voltage and bias current are internally trimmed to 50μV and 15nA, respectively. The slew rate is 13V/μs.


Discussion on “some notes on track bonding”

Proceedings of the American Institute of Electrical Engineers, 1905

C. W. Ricker: The cost of applying bonds, which I have given, may be criticized as unduly low; it is intentionally very close, but it is attainable with compressed or expanded terminal bonds. The use of reliable hydraulic compressors might reduce the figures a little, but the amount would not be great, as the copper must be compressed rather slowly ...


Quality and reliability investigation of Ni/Sn transient liquid phase bonding technology

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2015

A submicron of Ni/Sn transient liquid phase bonding at low temperature was investigated to surmount nowadays fine-pitch Cu/Sn process challenge. After bonding process, only uniform and high-temperature stable Ni<sub>3</sub>Sn<sub>4</sub> intermetallic compound was existed. In addition, the advantages of this scheme showed excellent electrical and reliability performance and mechanical strength.


A new collector structure for thin wafer NPT-IGBT with low dose p- Si injection layer and high dose p+ Ge contact layer

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, 2004

We have proposed a new collector structure for thin wafer IGBTs to improve contact resistances without sacrificing turnoff losses. The proposed structure has a low dose p- Si injection layer and a high dose p+ Ge contact. We also demonstrate, for the first time, the performance of 1.2 kV 200 A class thin wafer NPT IGBTs using this new collector ...


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Educational Resources on Contact resistance

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IEEE.tv Videos

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ICRA Plenary: Raffaello D'Andrea
The Josephson Effect: The Josephson Volt
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HKN Member Changzhi Li Receives an Award at the 2014 EAB Award Ceremony
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IEEE-USA E-Books

  • Luminescence amplification

    None

  • A bipolar opamp with a noise resistance of less than 50 &#969;

    This paper will cover the design of an opamp with input noise resistance of less than 50&#937;. The offset voltage and bias current are internally trimmed to 50&#956;V and 15nA, respectively. The slew rate is 13V/&#956;s.

  • Discussion on “some notes on track bonding”

    C. W. Ricker: The cost of applying bonds, which I have given, may be criticized as unduly low; it is intentionally very close, but it is attainable with compressed or expanded terminal bonds. The use of reliable hydraulic compressors might reduce the figures a little, but the amount would not be great, as the copper must be compressed rather slowly and the hydraulic machines are heavy and difficult to handle, so that the net saving of labor cost would be probably small, though the quality of work might be improved by their use.

  • Quality and reliability investigation of Ni/Sn transient liquid phase bonding technology

    A submicron of Ni/Sn transient liquid phase bonding at low temperature was investigated to surmount nowadays fine-pitch Cu/Sn process challenge. After bonding process, only uniform and high-temperature stable Ni<sub>3</sub>Sn<sub>4</sub> intermetallic compound was existed. In addition, the advantages of this scheme showed excellent electrical and reliability performance and mechanical strength.

  • A new collector structure for thin wafer NPT-IGBT with low dose p- Si injection layer and high dose p+ Ge contact layer

    We have proposed a new collector structure for thin wafer IGBTs to improve contact resistances without sacrificing turnoff losses. The proposed structure has a low dose p- Si injection layer and a high dose p+ Ge contact. We also demonstrate, for the first time, the performance of 1.2 kV 200 A class thin wafer NPT IGBTs using this new collector structure. As a result, from simulations and measurements, we found that the high dose p+ Ge layer acts to suppress the hole-injection and also provides low contact resistances without consequently sacrificing turnoff losses.

  • PMD (preferential metal deposition) aluminum process for 16 giga-bit DRAM and beyond

    The scale-down of ULSI devices has been increasing the importance of CMP process not only in logic but also in DRAM back-end processes. The utilization of CMP process in DRAM integration resulted in same depths of contact and via holes, and their actual depths ended up being deeper in comparison to the conventional planarizations. Although there are various techniques to fill these deep contacts, the need for the preceding barrier layer as a diffusion barrier and metal reliability enhancement in Si to metal contact and via application has delayed the implementation of the selective CVD-Al process. The present work reports a novel integration technique, named Al-PMD (preferential metal deposition), for complete filling of deep and small contacts and via holes by selective CVD-Al process.

  • Silver Tungsten vs Silver Tungsten Carbide Contact Performance in Environmental Testing

    The conductive performance of contact pairs varies greatly in testing due to their materials and to the probabilistic nature of how two parts can interface together. Contact pairs with different combinations of silver tungsten and silver tungsten carbide were exposed to salt spray test ASTM B117 for one week and two week intervals. Their resistance was then measured and analyzed using automated acquisition equipment and statistical methods. A simple probabilistic parallel resistor model was also created to simulate the range of results seen. The results are useful to other engineers working in this field to show the importance of taking multiple readings and using replicates in testing to account for normal variation. The model is helpful in visualizing what is perhaps happening in the contact interface.

  • Topography and Schottky contact models applied to NiSi SALICIDE process [MOSFET applications]

    Nickel monosilicide (NiSi) is considered to be a promising candidate for the self-aligned silicide (SALICIDE) material of 65 nm node MOSFETs and beyond. Therefore, an accurate simulation method for the NiSi SALICIDE process is required in order to design the optimum device. We realize, for the first time, the integrated simulation with silicide topography and Schottky contact models, and propose a calibration strategy of contact resistance. In this paper, we demonstrate the accurate simulation results of the silicide both in terms of its topography and contact resistance for the NiSi SALICIDE process.

  • Dependence of Al-Si/Si contact resistance on substrate surface orientation

    The dependence of Si growth on substrate orientation in the aluminium-silicon system is investigated. The Si epitaxial growth is found to show a strong dependence on the substrate surface orientation similar to the growth from Si- implanted amorphous Si. The Si growth at contact cuts changes in its quantity with substrate orientation, and Si SPE (solid-phase epitaxy) does not occur seriously on <111>-oriented substrates under the temperature in the experiment. As a result, the contact resistance of <100>-oriented samples increases rapidly with sintering time and its dispersion also increases, while those of <111>-oriented samples stay constant. The <111>-oriented surface is the most prominent for the contact-resistance stability.<<ETX>>

  • A Manufacturable Selective Tungsten Process for Applications in VLSI CMOS Devices

    None