Chemical vapor deposition
3,357 resources related to Chemical vapor deposition
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Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies
Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting technologies.System developers will find that IVEC provides a unique snapshot of the current state-of-the-art in vacuum electron devices. These devices continue to provide unmatched power and performance for advanced electromagnetic systems, particularly in the challenging frequency regimes of millimeter-wave and THz electronics.Plenary talks will provide insights into the history, the broad spectrum of fundamental physics, the scientific issues, and the technological applications driving the current directions in vacuum electronics research.
ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.
IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.
2020 IEEE Photovoltaic Specialists Conference (PVSC)
Promote science and engineering of photovoltaic materials, devices, systems and applications
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.
1961 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1961
IEEE Conference Record - Abstracts. 1991 IEEE International Conference on Plasma Science, 1991
IEEE Conference Record - Abstracts. 1992 IEEE International Conference on Plasma, 1993
1990 IEEE International Magnetics Conference (INTERMAG), 1990
IEEE Journal of Photovoltaics, 2018
Gettering of impurities plays a crucial role in production processes of multicrystalline silicon (mc-Si) solar cells. In industry this is commonly done via POCl3 diffusion gettering during emitter or back surface field formation. We report about the gettering efficacy of an alternative approach using doped glasses deposited prior to diffusion via atmospheric pressure chemical vapor deposition (APCVD). Not only effective ...
Honors 2020: Paul Daniel Dapkus Wins the Jun-ichi Nishizawa Medal
M. George Craford accepts the IEEE Edison Medal - Honors Ceremony 2017
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
Parallelized Linear Classification with Volumetric Chemical Perceptrons - Jacob Rosenstein - ICRC 2018
DROP: The Durable Reconnaissance and Observation Platform
Engineering the Future - Frances Arnold, Ph.D.
Microstructure-Property Correlations in Superconducting Wires - Applied Superconductivity Conference 2018
Superconducting Detectors for Astrophysics and Cosmology - ASC-2014 Plenary series - 9 of 13 - Thursday 2014/8/14
The Emerging Field of Biomedical Engineering
Larson Collection interview with Melvin Calvin
Spin Dynamics in Inhomogeneously Magnetized Systems - Teruo Ono: IEEE Magnetics Society Distinguished Lecture 2016
Engineering Our Future - Q and A with Panel
Q&A with Kip Ludwig: IEEE Brain Podcast, Episode 7
IEEE Magnetics 2014 Distinguished Lectures - Tim St Pierre
Larson Collection interview with William Alfred Fowler
GHTC 2012 - Krista Bauer Keynote
Larson Collection interview with Linus Pauling, part 1
Nanotechnology For Electrical Engineers
Larson Collection interview with Linus Pauling, part 2
Gettering of impurities plays a crucial role in production processes of multicrystalline silicon (mc-Si) solar cells. In industry this is commonly done via POCl3 diffusion gettering during emitter or back surface field formation. We report about the gettering efficacy of an alternative approach using doped glasses deposited prior to diffusion via atmospheric pressure chemical vapor deposition (APCVD). Not only effective high-temperature diffusion gettering is shown but also low-temperature internal gettering, which takes place during deposition. Both mechanisms were found to reduce interstitial iron concentrations considerably leading to significantly enhanced minority charge carrier lifetimes. Despite structure and composition of APCVD, phosphorus silicate glasses (PSG) may differ considerably from POCl3PSG, its overall gettering efficacy is found to be comparable or even superior. Resulting uniform sheet resistances and doping profiles are suitable for a cost-effective industrial APCVD-based codiffusion passivated emitter, rear totally diffused solar cell production process, whose applicability is demonstrated on 156 × 156 cm2p-type mc-Si.
Al-plug process using chemical vapor deposited (CVD) Al seed layer prepared with trimethylaminealane borane (TMAAB) as a precursor lias been developed for sub-60 mn design-rule dynamic random access memory (DRAM). In terms of the precursor stability and the particle generation performance, the TMAAB is better as compared to methylpyrrolidine alane (MPA) due to the depression of (AIH<sub>3</sub>)<sub>x</sub> polymer formation which generates particle. Integration challenges of Al-plug process related to via-filling were successfully overcome and the device speed was improved compared to W-plug process. The yield and interconnect reliability comparable to W-pfug have been achieved in multi-level-metallization.
Adhesion energies of Cu-low k dielectric interfaces, measured with the technique of four-point bending, show a correlation to chemical mechanical polish results. A limit of 5 J/m/sup 2/ is established, below which thin film delamination and cracking are observed. In general, spin-on polymer dielectrics exhibit better adhesion to barrier films than carbon-doped oxide dielectrics. PVD barriers exhibit better adhesion to low k dielectric films than CVD barriers. Surface treatments of the dielectric film before barrier deposition are found to strongly modulate CVD barrier to spin-on polymer adhesion.
We have investigated growth of metal-free carbon nanotubes (CNTs) on glass substrates with a microwave plasma enhanced chemical vapor deposition (MPECVD) method. An amorphous carbon (a-C) film was used as a catalyst layer to grow metal-free CNTs. The a-C films were deposited with a RF magnetron sputtering method using carbon target at room temperature on glass substrates. The CNTs were prepared using a microwave plasma-enhanced chemical vapor deposition (MPECVD) method by using methane (CH<sub>4</sub>) and hydrogen (H<sub>2</sub>) gas. We have pretreated a-C catalyst layer using H<sub>2</sub> plasma at 700°C and the CNTs were grown at different temperatures (350°C, 450°C and 550°C) and other conditions were fixed. The growth trends of CNTs against temperature were observed by field emission scanning electron microscopy (FE-SEM).
We demonstrate a 1.55-/spl mu/m InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapor deposition. AI/sub 2/O/sub 3/-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through single mode fiber are reported in the speed of 2.5 Gbit/s.
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