Conferences related to Charge pumps

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2020 IEEE 29th International Symposium on Industrial Electronics (ISIE)

ISIE focuses on advancements in knowledge, new methods, and technologies relevant to industrial electronics, along with their applications and future developments.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


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Periodicals related to Charge pumps

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Charge pumps

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Xplore Articles related to Charge pumps

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Design of a Low Noise Frequency-synthesizers for Digital Video Broadcasting-Handheld System

PRIME 2012; 8th Conference on Ph.D. Research in Microelectronics & Electronics, 2012

In this work, The design of PLL frequency synthesizer for the digital video broadcasting-handheld (DVB-H) is proposed. A system study of a zero-IF dual band DVB-H tuner is described. To meet the required noise figure specification, a 3- order SigmaΣΔ Delta| fractional-N PLL is adopted to cover UHF band and L band. At last, the design and implementation of key ...


A 4096-bit high-speed ECL compatible RAM

1975 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1975

A totally ECL I/O compatible, fast 4096 bit N-channel dynamic MOS RAM will be described. Access time is less than 80 ns, and no external or cyclic refresh is required.


Charge pump random-access memory

1972 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1972

A new MOS memory cell concept replacing load resistors with charge pumping devices will be discussed. Access time of 50 ns and 100-nW/bit standby power has been achieved for a 1024-bit array. Standard MOS processing is used.


Substrate and load gate voltage compensation

1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1976

A report on the application of on-chip substrate voltage and load-gate voltage compensation to minimize FET chip-to-chip power and performance variations.


Charge Pumping Technique

SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors, None

This chapter demonstrates that the charge pumping (CP) technique can be used to characterize two interfaces of the SOI layer when the SOI MOSFET has a body contact. Since the body contact and the source and drain junctions form pn junctions with the MOS gate, the charge pumping technique for the SOI MOSFET is related to SOI Lubistor operation. It ...


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Educational Resources on Charge pumps

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IEEE-USA E-Books

  • Design of a Low Noise Frequency-synthesizers for Digital Video Broadcasting-Handheld System

    In this work, The design of PLL frequency synthesizer for the digital video broadcasting-handheld (DVB-H) is proposed. A system study of a zero-IF dual band DVB-H tuner is described. To meet the required noise figure specification, a 3- order SigmaΣΔ Delta| fractional-N PLL is adopted to cover UHF band and L band. At last, the design and implementation of key circuits in the PLL loop is presented. A wideband VCO can be employed which covers a range of frequency 1.5 to 1.8 GHz. The synthesizer which implemented in 0.18 um CMOS achieved a low phase noise with -126 dBc/Hz @ 1MHz frequency offset in simulation. Index Terms - Digital video broadcasting-handheld (DVB-H), dual modulus prescalers, phase-locked loops (PLLs), extended true single phase clock logic (ETSPC).

  • A 4096-bit high-speed ECL compatible RAM

    A totally ECL I/O compatible, fast 4096 bit N-channel dynamic MOS RAM will be described. Access time is less than 80 ns, and no external or cyclic refresh is required.

  • Charge pump random-access memory

    A new MOS memory cell concept replacing load resistors with charge pumping devices will be discussed. Access time of 50 ns and 100-nW/bit standby power has been achieved for a 1024-bit array. Standard MOS processing is used.

  • Substrate and load gate voltage compensation

    A report on the application of on-chip substrate voltage and load-gate voltage compensation to minimize FET chip-to-chip power and performance variations.

  • Charge Pumping Technique

    This chapter demonstrates that the charge pumping (CP) technique can be used to characterize two interfaces of the SOI layer when the SOI MOSFET has a body contact. Since the body contact and the source and drain junctions form pn junctions with the MOS gate, the charge pumping technique for the SOI MOSFET is related to SOI Lubistor operation. It is easily anticipated that the impact of Lubistor operation on the charge pumping phenomenon is most critical when the SOI layer thickness is less than 10 nm because the energy levels of the SOI layer are definitely quantized. This is one of the challenging research issues with the charge pumping technique. In the following, we examine how to apply the charge pumping technique to the characterization of the two interfaces of an SOI MOSFET with a thick SOI layer.

  • A 70-ns 1K MOS RAM

    A 1024-bit static MOS RAM, designed to be fully TTL compatible and operable from a single 5-V supply, will be discussed. Performance of 70 ns was attained by combining depletion-load technology with on-chip substrate bias.

  • A charge pump without overstress for standard cmos process with improved current driver capability

    Many charge pump structures that overcome gate-oxide overstress have been proposed in the last few years. Though they differ in the number of phases and in efficiency, they have almost the same current driver capability. A new charge pump without gate-oxide overstress, with a better current driver capability is proposed here. The new circuit is derived from a two-phase charge pump in order to inherit its efficiency. A four-stage structure of the proposed circuit has shown a driver current capability 40% better than the previous solutions. The proposed circuit is also faster than the previous charge pumps that overcome gate-oxide overstress.

  • An efficiency-enhanced auto-reconfigurable 2x/3x SC charge pump for transcutaneous power transmission

    An auto-reconfigurable 2x/3x switched-capacitor charge pump (SC-CP) for transcutaneous power transmission is presented in this paper. The proposed SC- CP can automatically configure its own voltage conversion ratio by adaptive control circuitry for maintaining high efficiencies of the DC/DC regulator under coupling variations. An adaptive deadtime control is developed to improve the efficiency of the proposed SCCP by minimizing the shoot-through current. Implemented in a standard 0.35-mum n-well CMOS process, the proposed SC-CP achieves peak power efficiencies of 95% (2x) and 92% (3x). The efficiency of the DC/DC regulator with the proposed SC-CP is improved by >25%, compared to that using the conventional 3x SC-CP, when the input voltage varies from 1.6 V to 2.4 V.

  • Effect of low temperature deuterium annealing on plasma process induced damage

    The effects of low temperature deuterium annealing on plasma process induced damage were examined for devices with a thin gate oxide. The devices were exposed to the plasma during poly-Si gate or metal processes, and the device characteristics were monitored by charge pumping and current-voltage measurements. It was observed that the metal process induced more plasma damage than the poly-Si gate process. The deuterium (D/sub 2/) annealing had little effect on oxide damage, but it was very effective in reducing the interface damage. After D/sub 2/ annealing, the devices showed a very low level of interface states, and the strength to withstand electrical stress was also enhanced. To maximize D/sub 2/ annealing effects, it is suggested that the D/sub 2/ annealing should be conducted without any H/sub 2/ annealing.

  • (Invited) analysis and modeling of noise folding and spurious emission in wideband fractional-N synthesizers

    Fractional-N synthesizers are subject to generation of undesired spurious energy due to both linear and nonlinear processes. Previously, we presented an accurate modeling of the nonlinear, time-varying nature of the phase frequency detector (PFD), charge pump and frequency divider [1]. The proposed modeling technique was able to predict in-band spur power levels within 1.8 dB accuracy. In this paper we demonstrate using the proposed model that the close-in phase noise increase due intermodulation of the SigmaDelta high frequency quantization noise is independent of the synthesizer reference frequency, which is in contrast to commonly used linear models. A behavioral model is also used to show that the more detrimental near-integer in-band spurs can be generated by cross-coupling between the synthesizerspsilas various building blocks.



Standards related to Charge pumps

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No standards are currently tagged "Charge pumps"