Conferences related to Charge carrier mobility

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2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


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Periodicals related to Charge carrier mobility

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Charge carrier mobility

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Xplore Articles related to Charge carrier mobility

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Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

Electronics Letters, 1992

Current gains close to 200 are reported in carbon-doped base heterojunction bipolar transistors grown by chemical beam epitaxy, for base sheet resistance of 460 Omega / Square Operator . This result was made possible by the excellent quality of the carbon-doped GaAs layers, as demonstrated by the hole mobility and the minority carrier lifetime measurements.<<ETX>>


Silicon ultraviolet detectors and modelling

IEE Colloquium on Optical Detectors and Receivers, 1993

For ultraviolet radiation the use of silicon photodiodes is limited to specific measured wavelengths because of the difficulties involved with interpolation in that spectral region. The authors assess the feasibility of modelling the behaviour of silicon photodiodes sufficiently well to enable accurate interpolation and to associate uncertainties to the use of models describing the operation of silicon photodiodes in the ...


Improved hot-electron reliability in strained-Si nMOS

IEEE Transactions on Electron Devices, 2004

Strained-Si/relaxed-Si/sub 1-x/Ge/sub x/ structures provide a viable means of improving CMOS performance. For nMOS devices, the tensile strain in pseudomorphic Si on relaxed-Si/sub 1-x/Ge/sub x/ splits the six-fold degeneracy of the conduction band minimum, rendering increased electron mobility due to a lower in-plane effective mass and reduced intervalley scattering. In this paper, in addition to confirming enhanced performance for biaxial-strained-Si ...


Hydrogen passivation of high purity n-type InP

Electronics Letters, 1990

It has been shown for the first time that the concentration of ionised impurities in n-type InP can be reduced by incorporation of atomic hydrogen. The temperature dependence of the electron mobility indicates that donors as well as acceptors are passivated, although the hydrogen is more strongly bound when passivating acceptors.<<ETX>>


A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

IEEE Transactions on Electron Devices, 2002

A physics-based cutoff frequency model considering high-injection heterojunction barrier effects in SiGe HBTs is derived. Compared with other compact modeling approaches, the present model accurately captures the cutoff frequency behavior at very high current densities for SiGe HBTs with deep Si- SiGe heterojunctions. The model also offers better insight into the charge density distribution under Kirk and barrier effect in ...


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Educational Resources on Charge carrier mobility

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IEEE-USA E-Books

  • Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

    Current gains close to 200 are reported in carbon-doped base heterojunction bipolar transistors grown by chemical beam epitaxy, for base sheet resistance of 460 Omega / Square Operator . This result was made possible by the excellent quality of the carbon-doped GaAs layers, as demonstrated by the hole mobility and the minority carrier lifetime measurements.<<ETX>>

  • Silicon ultraviolet detectors and modelling

    For ultraviolet radiation the use of silicon photodiodes is limited to specific measured wavelengths because of the difficulties involved with interpolation in that spectral region. The authors assess the feasibility of modelling the behaviour of silicon photodiodes sufficiently well to enable accurate interpolation and to associate uncertainties to the use of models describing the operation of silicon photodiodes in the ultraviolet.<<ETX>>

  • Improved hot-electron reliability in strained-Si nMOS

    Strained-Si/relaxed-Si/sub 1-x/Ge/sub x/ structures provide a viable means of improving CMOS performance. For nMOS devices, the tensile strain in pseudomorphic Si on relaxed-Si/sub 1-x/Ge/sub x/ splits the six-fold degeneracy of the conduction band minimum, rendering increased electron mobility due to a lower in-plane effective mass and reduced intervalley scattering. In this paper, in addition to confirming enhanced performance for biaxial-strained-Si nMOS, we present hot-electron degradation characteristics for the first time, showing improvement over bulk Si.

  • Hydrogen passivation of high purity n-type InP

    It has been shown for the first time that the concentration of ionised impurities in n-type InP can be reduced by incorporation of atomic hydrogen. The temperature dependence of the electron mobility indicates that donors as well as acceptors are passivated, although the hydrogen is more strongly bound when passivating acceptors.<<ETX>>

  • A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

    A physics-based cutoff frequency model considering high-injection heterojunction barrier effects in SiGe HBTs is derived. Compared with other compact modeling approaches, the present model accurately captures the cutoff frequency behavior at very high current densities for SiGe HBTs with deep Si- SiGe heterojunctions. The model also offers better insight into the charge density distribution under Kirk and barrier effect in SiGe HBTs.

  • TCAD ready density gradient calculation of channel charge for Si/strained Si/sub 1-x/Ge/sub x/ dual channel pMOSFETs on [001] relaxed Si/sub 1-y/Ge/sub y/

    The dual channel MOSFET with strained Si/Si/sub 1-x/Ge/sub x/ layers on relaxed Si/sub 1-y/Ge/sub y/ is a promising structure for the improvement of CMOS performance because of its enhanced carrier mobilities (Hargrove, 1994). In order to obtain the correct threshold voltage and gate capacitance of these devices, it is essential to accurately model the channel charge distribution. In our study a dual channel MOSFET with an n-type substrate doping of 5 /spl middot/ 10/sup 17//cm/sup 3/ and a metal gate is investigated. The confinement of the holes to the strained SiGe region depends on the gate bias. For the first time accurate CV-characteristics for strained Si/SiGe dual channel pMOSFETs are calculated based on the density gradient method. These results make the direct application of commercially available TCAD tools feasible for the calculation of CV characteristics of such complicated structures.

  • Theoretical prediction of the performance of Si and SiC bipolar transistors operating at high temperatures

    Silicon carbide (SiC) is a promising material for semiconductor devices operated at high temperatures because of its large energy bandgap, high thermal conductivity and silicon compatibility. The authors develop an analytical model to predict and compare the DC and AC performance of SiC and conventional Si bipolar junction transistors (BJTs) at high temperatures. Based on the device parameters available in the literature, the authors' calculations show that the SiC BJT indeed possesses a higher current gain than its silicon counterpart as the temperature is increased beyond 500 K. This is primarily because SiC has a larger bandgap than Si. As a result, at high temperatures, the majority carrier concentration in the base of the SiC BJT remains the same value as the doping concentration, whereas the majority carrier concentration in the base of the Si BJT increases considerably beyond the doping concentration. The cutoff frequency of the SiC BJT, however, decreases and becomes smaller than that of the Si BJT when the temperature increases. The authors suggest this is caused by a faster decrease in the electron mobility of SiC than of Si as the temperature is increased. The model compares favourably with data measured from a typical Si BJT.<<ETX>>

  • Kinetics of high concentration arsenic deactivation at moderate to low temperatures

    This work investigates the kinetics of arsenic deactivation at temperatures from 500 to 800 degrees C and for concentrations between 1*10/sup 20/ and 1*10/sup 21//cm/sup 3/. Using profiles created by repeated laser melt annealing, we determine mobility as a function of both active and inactive dopant concentration and then characterize the dynamics of carrier deactivation. We observe retrograde resistivity versus concentration at high doses, which is explained by a mobility reduction due to the inactive arsenic and by retrograde electrical activity of the dopant itself.<<ETX>>

  • Improvement of polycrystalline silicon thin film transistor using oxygen plasma pretreatment before laser crystallization

    The device characteristics of the excimer laser recrystallize low temperature poly-Si (polycrystalline silicon) thin-film transistor (TFT) has been improved by employing an oxygen plasma pretreatment on the active amorphous silicon layer prior to the laser crystallization. The oxygen plasma pretreatment has reduced the number of interface traps and increased the field effective mobility in the polysilicon TFT. The device stability of the oxygen plasma pretreated TFTs under the dc stress has been improved due to strong Si-O bond formation during the laser recrystallization.

  • Numerical simulation of carrier transport in Schottky barrier diodes

    Carrier transport in Si Schottky diodes is analysed. A novel model for the recombination velocity suitable both for low and high biases has been derived and compared with previous models. The influence of the boundary condition on simulation results was found to be more significant for C-V than for I-V characteristics.<<ETX>>




Jobs related to Charge carrier mobility

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