Conferences related to Channel hot electron injection

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2020 IEEE International Conference on Image Processing (ICIP)

The International Conference on Image Processing (ICIP), sponsored by the IEEE SignalProcessing Society, is the premier forum for the presentation of technological advances andresearch results in the fields of theoretical, experimental, and applied image and videoprocessing. ICIP 2020, the 27th in the series that has been held annually since 1994, bringstogether leading engineers and scientists in image and video processing from around the world.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


GLOBECOM 2020 - 2020 IEEE Global Communications Conference

IEEE Global Communications Conference (GLOBECOM) is one of the IEEE Communications Society’s two flagship conferences dedicated to driving innovation in nearly every aspect of communications. Each year, more than 2,900 scientific researchers and their management submit proposals for program sessions to be held at the annual conference. After extensive peer review, the best of the proposals are selected for the conference program, which includes technical papers, tutorials, workshops and industry sessions designed specifically to advance technologies, systems and infrastructure that are continuing to reshape the world and provide all users with access to an unprecedented spectrum of high-speed, seamless and cost-effective global telecommunications services.


IGARSS 2020 - 2020 IEEE International Geoscience and Remote Sensing Symposium

All fields of satellite, airborne and ground remote sensing.


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Periodicals related to Channel hot electron injection

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Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Channel hot electron injection

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Xplore Articles related to Channel hot electron injection

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Back-bias Enhanced Source-Side Injection in 0.25um Embedded Flash Memories

29th European Solid-State Device Research Conference, 1999

None


New programming and erasing schemes for p-channel flash memory

IEEE Electron Device Letters, 2000

In this work, a new programming scheme using a forward substrate bias during BBHE injection and a two-step erasing scheme has been suggested to improve the performances of p-channel flash memory. It has been found that applying a forward substrate bias increases the electron injection efficiency and improves the cell's endurance characteristics. The two-step erasing scheme, where a channel erase ...


A 5 volt high density poly-poly erase flash EPROM cell

Technical Digest., International Electron Devices Meeting, 1988

A 5-V-only flash EPROM (erasable programmable read-only memory) cell is described which is programmed by channel-hot-electron injection and erased through a poly-poly oxide. The cell consists of a self-aligned split-gate EPROM and a polysilicon erase line. A charge-pumping technique which takes advantage of very low programming current is used to ensure fast programming at a worst case condition of 125 ...


VIPMOS, a Buried Local Injector for EPROMs

ESSDERC '89: 19th European Solid State Device Research Conference, 1989

A highly effective substrate hot electron injection EPROM device can be made using a buried injector, which operates in punch-through mode. The buried injector is formed by a local overlap of the N-well and P-well of a retrograde twin-well CMOS-process. As the VIPMOS-EPROM is compatible with VLSI-processing and the danger of latch-up doesn't exist, the VIPMOS-structure may be used in ...


A better understanding of substrate enhanced gate current in VLSI MOSFET's and flash cells. I. Phenomenological aspects

IEEE Transactions on Electron Devices, 1999

This paper analyzes in depth the phenomenon of gate current enhancement upon application of a substrate voltage (|V/sub B/|) recently observed in deep submicron MOSFETs. The correlation between the gate (I/sub G/) and the substrate (I/sub B/) current is studied as a function of |V/sub B/|, and it is shown: (1) to provide an experimental signature of the onset of ...


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Educational Resources on Channel hot electron injection

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IEEE.tv Videos

AlGaN/GaN Plasmonic Terahertz Detectors
IMS 2011 Microapps - Digital Radio Testing Using an RF Channel Replicator
Brooklyn 5G - 2015 - Andreas F. Molisch - Channel Measurements for Massive MIMO
Accelerating Photovoltaics
Brooklyn 5G Summit 2014: Channel Modeling and System Capacity with Dr. Tim Thomas and Dr. A Ghosh
Brooklyn 5G Summit: Channel Models: Key to 5G Air-Interface Technology
Brooklyn 5G Summit 2014: Tommi Jamsa on METIS Channel Modeling Activities
Ready, Fire, Aim - Highlights of Hot Chips 20
Best of Consumer Electronics Show Webinar
28 GHz mmWave Channel Sounder: From Inception to Reality - Arun Ghosh: Brooklyn 5G Summit 2017
IMS 2014: Wideband mmWave Channels: Implications for Design and Implementation of Adaptive Beam Antennas
Brooklyn 5G Summit 2014: Jonas Medbo on 5G Channel Modeling Challenges
Brooklyn 5G - 2015 - Dr. Amitabha Ghosh & Dr. Timothy A. Thomas - 5G Channel Modeling from 6 to 100 GHz: Critical Modeling Aspects and Their Effect on System Design and Performance
A 200um x 200um x 100um, 63nW, 2.4GHz Injectable Fully-Monolithic Wireless BioSensing System: RFIC Industry Showcase 2017
Brooklyn 5G - 2015 - George MacCartney - MmWave Channel Models - A Unified Approach for 5G Standardization and Modern Design
IMS MicroApps: Nonlinear Co-Simulation with Real-Time Channel Measurements
2D Nanodevices - Paul Hurley at INC 2019
Superconducting RF Cavities and Future Particle Accelerators - Applied Superconductivity Conference 2018
Brooklyn 5G Summit 2014: Channel Measurements Summary by Ted Rappaport
The Rock Star Event Series - Eric Berkowitz - Ignite: Sections Congress 2017

IEEE-USA E-Books

  • Back-bias Enhanced Source-Side Injection in 0.25um Embedded Flash Memories

    None

  • New programming and erasing schemes for p-channel flash memory

    In this work, a new programming scheme using a forward substrate bias during BBHE injection and a two-step erasing scheme has been suggested to improve the performances of p-channel flash memory. It has been found that applying a forward substrate bias increases the electron injection efficiency and improves the cell's endurance characteristics. The two-step erasing scheme, where a channel erase cycle is added after the source erase operation, is found to reduce the gate current degradation and also to improve the cell's endurance characteristics.

  • A 5 volt high density poly-poly erase flash EPROM cell

    A 5-V-only flash EPROM (erasable programmable read-only memory) cell is described which is programmed by channel-hot-electron injection and erased through a poly-poly oxide. The cell consists of a self-aligned split-gate EPROM and a polysilicon erase line. A charge-pumping technique which takes advantage of very low programming current is used to ensure fast programming at a worst case condition of 125 degrees C and 4.5-V supply. An over-erase technique is used to achieve a uniform erase, high read current, and extended endurance. The flash cell is implemented in a staggered virtual ground-array which yields a cell size of 18 mu m with 1.2- mu m design rules in a double- poly CMOS EPROM process.<<ETX>>

  • VIPMOS, a Buried Local Injector for EPROMs

    A highly effective substrate hot electron injection EPROM device can be made using a buried injector, which operates in punch-through mode. The buried injector is formed by a local overlap of the N-well and P-well of a retrograde twin-well CMOS-process. As the VIPMOS-EPROM is compatible with VLSI-processing and the danger of latch-up doesn't exist, the VIPMOS-structure may be used in VLSI-applications. Due to an efficient electron supply mechanism as well as a high injection probability, programming rates of 1V/μs can be obtained.

  • A better understanding of substrate enhanced gate current in VLSI MOSFET's and flash cells. I. Phenomenological aspects

    This paper analyzes in depth the phenomenon of gate current enhancement upon application of a substrate voltage (|V/sub B/|) recently observed in deep submicron MOSFETs. The correlation between the gate (I/sub G/) and the substrate (I/sub B/) current is studied as a function of |V/sub B/|, and it is shown: (1) to provide an experimental signature of the onset of a new injection regime; and (2) to suggest a simple technique for separating the substrate enhanced gate current component from the conventional channel hot electron one. An empirical model of the new injection regime is assessed and the dependence of the model parameter on the lateral and vertical field is demonstrated. The sensitivity of the enhanced gate current to device design issues is also characterized. Different charge injection mechanisms compatible with the highlighted correlation between I/sub G/ and I/sub B/ are carefully analyzed in Part II.

  • A convergence scheme for over-erased flash EEPROM's using substrate-bias-enhanced hot electron injection

    A novel convergence scheme using substrate-bias-enhanced hot electron injection is proposed to tighten the cell threshold voltage distribution after erasure for stacked gate flash EEPROM's. By lowering the drain voltage and increasing the magnitude of the negative substrate bias voltage, the substrate current is reduced but the hot electron gate current is enhanced significantly, and the convergence time is shown to be more than a hundred times shorter than the previous scheme. With the convergence operation performed near the ON-OFF transition region of the cells, the total drain current for all the converged cells is reduced and low power consumption is achieved.<<ETX>>

  • A new SONOS memory using source-side injection for programming

    We reported a new polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory using channel hot electron injection for high-speed programming. For the first time, we demonstrated that source-side injection technique, which is commonly used in floating gate nonvolatile memories for its high programming efficiency, can also be used in a SONOS device for achieving high-speed programming. Erase of the device is achieved by tunneling of electrons through the thin top oxide of the ONO charge storage stack. Since the thin top oxide is grown from the nitride layer, the self-saturated nature of the oxidation allows better thickness control. Endurance characteristics indicates that quality of the thin top grown from nitride is as good as the tunnel oxide grown from the silicon substrate. By increasing the top oxide thickness, it is possible to achieve ten years of retention requirement. The self-aligned sidewall gate structure allows small cell size for high density applications.

  • A better understanding of substrate enhanced gate current in VLSI MOSFETs and flash cells. II. Physical analysis

    For pt. I see ibid., vol. 46, no. 2 (Feb. 1999). In this work-different physical mechanisms that could lead to the direct proportionality between I/sub G/ and I/sub B/ as the signature of substrate enhanced electron injection (SEEI), are analyzed in detail. By means of experiments and simulations we substantiate the current interpretation of SEEI in terms of an impact ionization feedback process and attribute a quantitatively negligible role to both drain avalanche hot electron injection and substrate electrons generated by the photons emitted by channel hot electrons. These experiments reconcile the current explanation of SEEI with the well known phenomenon of photon assisted minority carrier injection in the substrate, whose presence is clearly detectable in our devices, but whose impact on the gate current is estimated to be orders of magnitude smaller than that of impact ionization feedback.

  • Submicron MOSFET Structure for Minimizing Channel Hot-Electron Injection

    None

  • Buried source-side injection (BSSI) for flash EPROM programming

    A flash-EPROM cell structure that can be programmed at low drain voltages and low power is disclosed. The new element in the device structure is the incorporation of buried junction at the source side where the high electric field region is established during programming. The cell is programmed by hot- electron injection at the source side and erased by Fowler-Nordheim tunneling at the drain side. Typical programming time of 10 mu s/byte can be accomplished with 3.5 V on the drain junction. The structure can be built with the standard EPROM technology and can offer advantages in low-voltage power supply systems such as portable and notebook computers.<<ETX>>



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